MITSUBISHI IGBT MODULES

CM300DY-28H
HIGH POWER SWITCHING USE
INSULATED TYPE

A
B
M P - DIA.
(4 TYP.)

E2 C2
C2E1 E2 C1
R
C F L D

C1 E1
R

G G H Description:
S - M6 THD.
(3 TYP) Mitsubishi IGBT Modules are de-
N K N TAB #110, t = 0.5 signed for use in switching applica-
Q tions. Each module consists of two
K K
IGBTs in a half-bridge configuration
with each transistor having a re-
E verse-connected super-fast recov-
J
N ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
C2

sembly and thermal management.

E2

Features:
u Low Drive Power
u Low VCE(sat)
u Discrete Super-Fast Recovery
C2E1 E2 C1
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
E1

Applications:
u AC Motor Control
C1

u Motion/Servo Control
Outline Drawing and Circuit Diagram
u UPS
Dimensions Inches Millimeters Dimensions Inches Millimeters u Welding Power Supplies
A 4.33 110.0 K 0.71 18.0
Ordering Information:
B 3.661±0.01 93.0±0.25 L 0.59 15.0 Example: Select the complete part
C 3.15 80.0 M 0.55 14.0 module number you desire from
D 2.441±0.01 62.0±0.25 N 0.28 7.0
the table below -i.e. CM300DY-28H
is a 1400V (VCES), 300 Ampere
E 1.18 Max. 30.0 Max. P 0.26 Dia. Dia. 6.5
Dual IGBT Module.
F 1.18 30.0 Q 0.33 8.5
Type Current Rating VCES
G 0.98 25.0 R 0.24 6.0 Amperes Volts (x 50)
H 0.85 21.5 S M6 Metric M6
CM 300 28
J 0.83 21.2

Sep.2000
 MITSUBISHI IGBT MODULES

CM300DY-28H
HIGH POWER SWITCHING USE
INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Symbol Ratings Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1400 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (TC = 25°C) IC 300 Amperes
Peak Collector Current ICM 600* Amperes
Emitter Current** (TC = 25°C) IE 300 Amperes
Peak Emitter Current** IEM 600* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 2100 Watts
Mounting Torque, M6 Main Terminal – 1.96 ~ 2.94 N·m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N·m
Weight – 500 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 5.0 6.5 8.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V – 3.1 4.2** Volts
IC = 300A, VGE = 15V, Tj = 150°C – 2.95 – Volts
Total Gate Charge QG VCC = 800V, IC = 300A, VGE = 15V – 1530 – nC
Emitter-Collector Voltage VEC IE = 300A, VGE = 0V – – 3.8 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 60 nF
Output Capacitance Coes VGE = 0V, VCE = 10V – – 21 nF
Reverse Transfer Capacitance Cres – – 12 nF
Resistive Turn-on Delay Time td(on) – – 250 ns
Load Rise Time tr VCC = 800V, IC = 300A, – – 500 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω – – 350 ns
Times Fall Time tf – – 500 ns
Diode Reverse Recovery Time trr IE = 300A, diE/dt = –600A/µs – – 300 ns
Diode Reverse Recovery Charge Qrr IE = 300A, diE/dt = –600A/µs – 3.0 – µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.06 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.12 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.035 °C/W

Sep.2000
 MITSUBISHI IGBT MODULES

CM300DY-28H
HIGH POWER SWITCHING USE
INSULATED TYPE

COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)

600 600 5
Tj = 25°C 15 14 13 VCE = 10V VGE = 15V

SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)

VGE = 20 Tj = 25°C
500 500
(V) 4 Tj = 125°C

COLLECTOR-EMITTER
12
400 400
3
300 11 300
2
200 10 200

9 1
100 100
8 Tj = 25°C
Tj = 125°C
0 0
0 2 4 6 8 10 0 4 8 12 16 20 0 120 240 360 480 600
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. VCE
(TYPICAL) (TYPICAL) (TYPICAL)
10 103 102
Tj = 25°C Tj = 25°C Cies
SATURATION VOLTAGE, VCE(sat), (VOLTS)

IC = 600A CAPACITANCE, Cies, Coes, Cres, (nF)

EMITTER CURRENT, IE, (AMPERES)

8
COLLECTOR-EMITTER

IC = 300A 101
6 Coes

102
4
Cres
100

2
IC = 120A
VGE = 0V

0 101 10-1
0 4 8 12 16 20 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 100 101 102
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL) GATE CHARGE, VGE
104 103 102 20
VCC = 800V
VGE = ±15V IC = 300A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY TIME, t rr, (ns)

RG = 1.0Ω
16
Tj = 125°C Irr VCC = 600V
SWITCHING TIME, (ns)

103 td(off) t rr VCC = 800V

tf 12
102 101
td(on)
8
102 tr

4
di/dt = -600A/µsec
Tj = 25°C

101 101 100 0

101 102 103 101 102 103 0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

Sep.2000
 MITSUBISHI IGBT MODULES

CM300DY-28H
HIGH POWER SWITCHING USE
INSULATED TYPE

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(IGBT) (FWDi)
10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

101 101
Single Pulse Single Pulse
TC = 25°C TC = 25°C
Per Unit Base = R th(j-c) = 0.06°C/W Per Unit Base = R th(j-c) = 0.12°C/W
Zth = Rth • (NORMALIZED VALUE)

Zth = Rth • (NORMALIZED VALUE)

100 100

10-1 10-1 10-1 10-1

10-2 10-2 10-2 10-2

10-3 10-3 10-3 10-3

10-5 10-4 10-3 10-5 10-4 10-3
TIME, (s) TIME, (s)

Sep.2000