ICE 2312

Week 11 Tutorial

1. Calculate the forward current flowing in a wide, one-sided p+n junction diode with (i)
0.3 V and (11) 0.62V applied. You may assume h = 120 s, Dh = 1.24x10-3 m2/s, Nd =
5 x 1018 m-3, A = 80 m x 30 m and T = 300 K.

2. (a) The base doping in a pnp bipolar transistor is 3x1021 m-3. Calculate the thermal
equilibrium concentration of minority carriers in the base.
(b) When the transistor is switched on, you may assume that the emitter voltage is 0.6V.
Assuming the transistor is ideal, calculate the magnitude of the collector current if the
emitter area is 50 m x 50 m, the active base width is 0.7 m.

Constants:
e = 1.6 x 10-19 C, k = 1.38 x 10-23 J/K = 8.6 x 10-5 eV/K, ni = 1.45 x 1016 m-3,
e = 0.135 m2V-1s-1, h = 0.048 m2V-1s-1, NC = 2.5 x 1025 m-3, NV = 1.04 x 1025 m-3,
Eg (Si) = 1.1 eV, (Si) = 11.9, (SiO2) = 3.8, ε0= 8.85 x 10-12 F m-1.