UNIVERSAL COLLEGE OF ENGINEERING & TECHNOLOGY

DOKIPARRU (V), MEDIKONDURU (M), GUNTUR-522438

Affiliated to JNTU, Kakinada & Approved by AICTE, New Delhi

DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING

Slip Test-I

Subject: FACTS Name of the Faculty: Y H M REDDY

Year & Sem:- IV EEE-II SEM Date:
Fill in the blanks Marks: 10M
1. The purpose of the transmission network is to pool power plants and load centers in order to
minimize the _____and ______.
A. total power generation capacity, fuel cost
B. total distribution capacity, unit cost
C. total transmission capacity, running cost
D. total power generation capacity, maintenance cost
2. By providing added flexibility, FACTS Controllers can enable a line to carry power closer to
its ________.
A. Dielectric rating B. Stability C. Thermal Rating D. Rated Voltage

3. In ac power systems, given the insignificant electrical storage, the ____and ___ must balance
at all times.
A. electrical transmission and distribution B. electrical generation, load
C. electrical transmission and load D. None of the above
4. Power flow is based on the inverse of the various transmission line ________.
A. Impedance B. Capacitance C. Voltage D. Current

5. An HVDC line, because of its high-speed control, can also help the parallel ac transmission
line to maintain _____.
A. Voltage B. Rated power C. Thermal Rating D. Stability
6. By means of controlling _______ a FACTS Controller can control the power flow as required.
A. impedance B. phase angle
C. series injection of appropriate voltage D. All the above
7. A series capacitor in a line may lead to _________.
A. Sub-synchronous resonance B. Mechanical Oscillations C. Damping D. All the
above
8. ________ limits the loading capability of Transmission lines
A. Thermal B. Dielectric C. Stability D. All the above
9. Thermal capability of an overhead line is a function of the ________.
A. ambient temperature, wind conditions B. loading Capability
C. condition of the conductor, and ground clearance D. A&C
10. _______ can be taken into account on the real-time value basis of extra loading capability.

A. Losses B. Rated power C. Voltage D. Current

11. Dielectric from an ____ point of view, many lines are designed very conservatively.

A. Conduction B. Electrical potential C. Insulation D. Resistance

12. The current flow on the line can be controlled by controlling ______
A. EL B. X C. δ D. All the above
13. A 500 kV (approximately 300 kV phase-ground), 2000 A line has a three-phase throughput
power of 1800 MVA, and, for a 200 km length, it would have a voltage drop of about 60
kV. For variable series compensation of say, 25%, the series equipment required would have
a nominal rating of _______MVA per phase, which is only _____% of the throughput line
rating of 1800 MVA.
A. 35, 5.5 B. 30, 5 C. 30, 4 D. 35, 5
14. Increasing or decreasing the inductive impedance of a line will greatly affect the _____flow.
A. active power B. reactive power C . A &B D. None of the Above

15. Control of the line impedance X (e.g., with a thyristor-controlled series capacitor) can
provide a powerful means of ____ control.
A. Voltage B Current C. Power D. None of the Above
16. An injecting a _______phasor with variable phase angle can provide a powerful means of
precisely controlling the active and reactive power flow.
A. Voltage B Current C. Power D. None of the Above
17. In principle, all series Controllers inject _______ in series with the line.
A. Voltage B Current C. Power D. None of the Above
18. In principle, all shunt Controllers inject current into the system at the ________.
A. Transmission side B. Point of connection C. Distribution side D. Near to the
load
19. Silicon crystal has a very high voltage breakdown strength of ______ kV/cm
A. 198 B. 240 C. 155 D. 200

20. Transition from a fully conducting to a fully non-conducting state (turn-off) with
corresponding _____ just after turn-off, and from a fully non-conducting to a fully
conducting state (turn-on) with corresponding ______during the turn-off are very important
parameters.
A. low dv/dt, low di/dt B. high dv/dt, low di/dt
C. high dv/dt, high di/dt D. low dv/dt, high di/dt