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Chapter 4 JFET Theory and Applications
Chapter 4 JFET Theory and Applications
There are two types of JFET namely n-channel and p-channel. n-channel
type means the carrier type in the conducting channel is electron. Likewise, for
p-channel type, the carrier type in conducting channel is hole.
JFET has three terminals, which are gate G, drain D and source S. The gate
is used to control the flow of carrier from source to drain. Source is the terminal
that emits carrier and the drain is the terminal that receives carrier.
The structures of n-channel and p-channel JFET are shown in Fig. 4.1.
The symbols of n-channel and p-channel JFETs are shown in Fig. 4.2.
The source and drain are biased according to the channel type or carrier
type. If it is an n-channel JFET (electron as carrier), the source is biased with
negative voltage while the drain is biased with positive voltage. Alternatively, it
can be biased such that the drain voltage VD is greater than the source voltage
VS. i.e. VD > VS.
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4 Junction Field Effect Transistor Theory and Applications
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4 Junction Field Effect Transistor Theory and Applications
Between point A and B, it is the ohmic region of the JFET. It is the region
where the voltage and current relationship follows ohm's law. At point B, the
drain current is at maximum for VGS = 0 condition and is defined as IDSS. It is
the pinch-off point, where there is no increase of current as drain-to-source
voltage VDS is further increased. The VDS voltage at this point is called pinch-off
voltage VP. It is also the voltage point where drain-to-gate voltage VDG produces
enough depletion thickness to narrow the channel so that the resistance of the
channel will increase significantly. Since VGS = 0, VDS is also equal to VDG.
Thus, in general the pinch-off voltage Vp is
where VDS(P) is the pinch-off drain-to-source voltage for a VGS value. IDSS and VP
are constant values listed by the manufacturer for a given JFET type, which are
the drain current and pinch-off voltage at gate-to-source voltage VGS = 0.
At ohmic region of the drain characteristic curve for n-channel type follows
equation (4.2a), which is
W
I D = AqN D µ n E X = 2bqN D µ n VDS (4.2a)
L
where A is the effective cross sectional area of the channel for a given VGS
voltage and b is the effective channel width for a given gate-to-source voltage
and zero drain current. At gate-to-source voltage equals to zero volt i.e. VGS = 0
volt, the effective channel width b is equal to h. Thus, the channel on-resistance
1 L
is defined as rDS( on ) = ⋅ .
2 hqN D µ n W
Figure 4.6 shows the set-up for obtaining cut-off condition whereby the drain
current ID is equal to zero.
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4 Junction Field Effect Transistor Theory and Applications
Example 4.1
For the JFET circuit shown in the figure, VP = 8.0V and IDSS = 12.0mA. (a)
Determine the value of VDS when pinch-off begins. (b) If the gate is grounded,
what is the value of ID for VDD = 12.0V when VDS is above pinch-off?
Solution
From the circuit, VGS = -5V and apply equation (4.1),
VDS(P) = VP + VGS
= 8V + (-5V)
= 3V
The VDS voltage when pinch-off occurred is 3.0 V.
When the gate is grounded, VGS = 0V, the drain current ID is equal to IDSS =
12mA. For any value of drain-to-source voltage VDS above pinch-off voltage of
8V, the drain current ID remains as IDSS = 12.0mA. This is true as long as the
drain-to-source voltage VDS is below breakdown voltage.
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4 Junction Field Effect Transistor Theory and Applications
∆I D
gm = (4.4)
∆VGS
From the transfer characteristic curve, one will realize that the transconductance
of the device is at maximum when VGS is at zero voltage. The value of gm at VGS
= 0 is always given in the manufacturer data sheet of the device, which is
denoted as gm0. If gm0 is given, gm for a given VGS can be calculated from
equation (4.5).
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4 Junction Field Effect Transistor Theory and Applications
VGS
g m = g m0 1 − (4.5)
VGS( off )
dI D 2I DSS VGS
gm = =− 1 − (4.6)
dVGS VGS( Off ) VGS( off )
2I DSS
g m0 = − (4.7)
VGS( off )
Thus, given the values of IDSS and VGS(off), the transconductance of the device at
VGS = 0 can be determined.
g m = g m0 I D / I DSS (4.8)
Thus, the transconductance gm of JFET for a given drain current ID value, can be
obtained.
Since the gate of JFET is reverse-biased, the input impedance is very high. This
is one advantage of JFET over bipolar junction transistor. In JFET data sheet,
the input impedance is given by gate reverse current IGSS for a given gate-source
voltage VGS. Thus, input impedance can be expressed as
VGS
R IN ( gate ) = (4.9)
I GSS
The self-biasing circuits for n-channel and p-channel JFET are shown in Fig.
4.8. The gate of the JFET is connected to the ground via a gate resistor RG.
The gate voltage VG is closed to zero since the voltage dropped across RG by
IGSS can be ignored. Thus,
VGS = VG - VS (4.10)
VGS = 0V - IDRS
and
VDS = VD -VS
= VDD - IDRD -IDRS
= VDD - ID(RD + RS) (4.11)
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4 Junction Field Effect Transistor Theory and Applications
VGS
RS = (4.12)
ID
Example 4.2
Determine the value of RS required to self-bias an n-channel JFET with IDSS =
25mA, VGS(off) = -10V, VGS = -5V and its transconductance gm.
Solution
Drain current ID at gate-to-source VGS = -5V is
2
VGS − 5V
2
VGS 5V
RS = = = 800Ω
ID 6.25mA
2I DSS 2 x25mA
Transconductance gm at VGS = 0, g m0 = − =− = 5mA / V
VGS( off ) − 10V
The purpose of midpoint bias is to allow maximum drain current ID swing. From
the drain transfer characteristic curve, the midpoint bias occurred at drain
current ID corresponds to IDSS/2 and at approximately gate-to-source voltage VGS
equals to VGS(off)/4. Indeed when drain current equals to ID = IDSS/2, gate-to-
source voltage is VGS = 0.29 time of gate-to-source cutoff voltage VGS(off). The
illustration is shown in Fig. 4.9.
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4 Junction Field Effect Transistor Theory and Applications
Figure 4.9: The transfer characteristic curve showing midpoint-bias values for JFET
An n-channel JFET with voltage-divider bias is shown in Fig. 4.10. The voltage
at the source of the JFET must be more positive than the voltage at the gate in
order to keep the gate-source junction reverse-biased.
VS = IDRS (4.13)
R2
VG = V (4.14)
R 1 + R 2 DD
Thus,
R2
VGS = V - IDRS (4.15)
R 1 + R 2 DD
and
VG − VGS
ID = (4.17)
RS
Example 4. 3
Determine the dc Q-point of the amplifier shown in figure and draw its dc load
line. Given the IDSS and VGS(off) of JFET are 20mA and - 4.0V respectively.
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4 Junction Field Effect Transistor Theory and Applications
Solution
Since RIN(gate) is extremely large, it does not cause any significant effect to gate
resistor RG.
− 15
2
. V
I D = 20mA 1 − = 7.8mA
− 4V
From the results above, the Q (quiescent)-point and dc load line are drawn
and shown in Fig. 4.11.
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4 Junction Field Effect Transistor Theory and Applications
Figure 4.11: The graph shows the dc load line and Q-point of the amplifier shown in Fig.
4.10
Example 4.4
Determine the approximate Q-point for the JFET biased with a voltage divider
circuit as shown in the figure, given that the particular device has transfer
characteristic curve as shown.
Solution
From equation (4.13), for drain current ID = 0A, the gate-to-source voltage VGS
is
R2 2.2 MΩ
VGS = VG = VDD = 8V = 4.0V
2.2 MΩ + 2.2 MΩ
R1 + R 2
VG
ID = = 4V/3.3kΩ = 1.2mA
RS
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4 Junction Field Effect Transistor Theory and Applications
From graphic plot, ID for Q-point is 1.8mA. Thus, from equation (4.14)
= 8V - 1.8mA(680Ω + 3.3kΩ)
= 0.83V
Figure 4.12: Transfer characteristic curve of n-channel JFET showing signal amplification
Similarly, once can see that the above-mentioned change would also show in the
change of drain-to-source voltage VDS as shown in Fig. 4.13.
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4 Junction Field Effect Transistor Theory and Applications
Like in the case of bipolar junction transistor, the Q-point of the amplifier
should be designed to set at the linear region of the transfer characteristic curve
to avoid non-linearity distortion.
∆I D
Equation (4.4) defines dc transconductance as gm = . Thus, ac
∆VGS
Id
transconductance is defined as g m = . By rearranging the equation, ac drain
Vgs
current is Id = gmVgs.
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4 Junction Field Effect Transistor Theory and Applications
(a) (b)
Figure 4.14: π-model of JFET/MOSFET ac equivalent circuit
The T-model of the JFET device, which is also the model for the MOSFET
device, is shown in Fig. 4.15. The model is derived based on the fact the ac
source resistance Rin(source) of the JFET/MOSFET is equal to Rin(source)
Vgs Vgs 1
= = = .
IS g m Vgs gm
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4 Junction Field Effect Transistor Theory and Applications
The voltage gain AV of the JFET with an external ac source as input is defined
as AV = Vout/Vin. For a self bias JFET amplifier, its ac equivalent circuit is
shown in Fig. 4.16.
From the circuit, the output voltage Vout is Vout = -Vds = -IdRD and the input
voltage Vin is Vin = Vgs = Id/gm. Thus, the voltage gain is equal to AV = Vout/Vin
is
Id R D
AV = − = −g m R D (4.18)
Id / gm
R D rO
A V = −g m (4.19)
R D + rO
gm R D rO
AV = - (4.20)
(1 + g m R S ) R D + rO
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4 Junction Field Effect Transistor Theory and Applications
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4 Junction Field Effect Transistor Theory and Applications
As usual voltage gain AV is Av = Vout/Vin. The input voltage Vin is Vin = Vgs +
IdRS. The output voltage Vout is Vout = IdRS. The voltage gain AV shall then be
equal to AV = IdRS/(Vgs + IdRS).
gmRS
AV = (4.22)
1+ gmRS
Thus, one can see that the gain is always less than one. If gmRs >> 1 then Av ≅ 1.
The input impedance of the gate RIN(gate) is very high and it can be
calculated from the gate reverse current IGSS value for a specified VGS value
from data sheet of the JFET using equation (4.9). If these data are given for a
specified JFET then the input impedance RIN for the amplifier shall be RIN(gate)
parallel with gate resistance RG.
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4 Junction Field Effect Transistor Theory and Applications
The voltage gain AV is AV = -Vout/Vin and taking equation (4.4) for the drain
current Id, which is equal to gmVgs. The voltage gain shall be
The input impedance Rin(source) = Vin/Iin. Since the input voltage Vin is Vin = Vgs
and Iin = Id = gmVgs. The ac source resistance Rin(source) shall be
From equation (4.24), it tells us that the input impedance Rin(source) is small,
which true because the source should have low impedance.
Example 4.5
From the circuit of common source JFET amplifier shown in the figure, its has
VGS(off) = -2.0V, IDSS = 1.4mA. If you need this amplifier to be biased with ID =
0.7mA, VDD = 20V, and voltage gain of 20dB, what is the value of RS, and RD?
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4 Junction Field Effect Transistor Theory and Applications
Solution
Using equation (4.3), the drain current ID is
2
VGS VGS
2
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4 Junction Field Effect Transistor Theory and Applications
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4 Junction Field Effect Transistor Theory and Applications
Tutorials
4.1. Describe and draw the diagrams to illustrate, how the n-channel and p-
channel JFET should be biased for normal operation.
4.2. The data sheet for certain type of JFET indicates that IDSS = 25mA,
VGS(off) = -10V, and gm0 = 5000µS.
Determine
(i) The type of JFET
(ii) Drain current ID at VGS = 0
(iii) Drain current ID and transconductance gm at VGS = - 4V.
2
V ∆I V
4.3. Given that I D = I DSS 1 − GS , g m = D , and g m = g m 0 1 − GS ,
VGS( off ) ∆VGS VGS( off )
2I
prove that g m 0 = − DSS and g m = g m 0 I D / I DSS .
VGS( off )
4.5. From the circuit of common source JFET amplifier shown in figure, its
has VGS(off) = -2.0V, IDSS = 1.4mA. If you need this amplifier to be biased
with ID = 0.7mA, VDD = 20V, and voltage gain of 20dB, what is the
value of RS, and RD?
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4 Junction Field Effect Transistor Theory and Applications
4.6. Given a common drain JFET amplifier has VGS(off) = -8.0V, gm0 =
6000µS, R1 = R2 = 500kΩ, VDD = 20V, and C1 = C2 = 0.1µF.
(i) Calculate the values of output impedance and input impedance of the
amplifier when gate-to-source voltage VGS are -1.0V and -0.5V?
(ii) Calculate the drain-to-source current IDS when VGS is -1.5V?
(iii) What is the ac voltage gain AV of this amplifier when a load RL of
15.0kΩ is connected at VGS = -1.5V?
References
1. Thomas L. Floyd, "Electronic Devices", Prentice Hall International,
Inc.,1999.
2. Robert T. Paynter,"Electronic Devices and Circuits", fifth edition, McGraw-
Hill, 1997.
3. Adel S. Sedra and Kenneth C. Smith, "Microelectronic Circuits", fourth
edition, Oxford University Press, 1998.
4. Theodore F. Bogart, Jr., Jeffrey S. Beasley, and Guillermo Rico, “Electronic
Devices and Circuits”, sixth edition, Prentice Hall International Inc., 2004.
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