Intemational eee 2F| Rectifier IRF9640 HEXFET® Power MOSFET © Dynamic dv/dt Rating © Repetitive Avalanche Rated e © P-Channel * Fast Switching © Ease of Paralleling 7 © Simple Drive Requirements 8 Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercialsindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units | Ip @ To=25°C | Continuous Drain Current, Ves @ -10 V “1 lp @ Tc= 100°C _| Continuous Drain Current, Ves @ -10 V 68 A Jon Pulsed Orain Current © “44 Pp @ Tc=25°C_| Power Dissipation 125 WwW. Linear Derating Factor eee ree 10 7 PC Gate-to-Source Voltage 220 v Single Pulse Avalanche Energy © 700 md Avalanche Current © “it A_| "| Repetitive Avalanche Energy © 43 md Peak Diode Recovery dviat_ & 50 Vins Operating Junetion and “55 to +150 °c Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Bfsin (1.1 Nem} Thermal Resistance __ Parameter ott ~~ Max. Faso ‘Junetion-to-Case 10 | Roos, Case-to-Sink, Flat, Greased Surface = 0.50 = cow Pua Junetion-to-Ambient = = 2 i 383IRF9640 TOR Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. | Typ. | Max. [ Units Test Conditions Veerposs | Drain-to-Source Breakdown Voltage | -200 | — | — | V_|Vas=OV, lo=-250uA "AVienpse/AT,| Breakdown Voltage Temp. Coefficient | — |-020| — | VFO | Reference to 25°O, Ip=-1mA | Posten, Static Drainto-Source OnResistance | — | — | 0.60 | @ |Ves=-10V, lp=6.6A © Vasu Gate Threshold Voltage 2.0 | — | -40 | _V_[Vos=Ves, lo=-250uA Os Forward Transconductance 44 [| = [= TS |Vose-50V, lo=-6.6A © loss Drain-to-Source Leakage Current ee ves a vee eS ay ‘Gate-to-Source Forward Leakage = [= 100 7, [Vose-20v Gate-to-Source Reverse Leakage — |= [100 Ves=20V Q Total Gate Charge TS ae To=11A [Qe Gate-to-Source Charge == Terr] ne | Vos=-160v [Oye Gate-to-Drain (Miler?) Charge = [= [27 |__| Vos=-10V See Fig. 6 and 13. © [tao | Tum-On Delay Time = [44 V te Rise Time =l[el=1,, ta Turn-Off Delay Time — [as [— ti Fall Time = [ss T= Ro=8.60_ See Figure 10 @ |b Internal Drain Inductance —f 45] — ean een) & nH | from package i ils Internal Source Inductance —|rs]—- and center of ¢ Cues Input Capacitance = [1200 [= Vas=0V Cone ‘Output Capacitance — [370 [— | pF | Vos=-25v Cros Reverse Transfer Capacitance [=] a [= f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics (7 Parameter Min, [ Typ. | Max. | Units | Test Concitions is Continuous Source Current fore eee So MOSFET symbol (Body Diode) ‘a [showing the Isa Pulsed Source Current core eee ea integral reverse ) (Body Diode) © Pn junction diode, 's Vso) Diode Forward Voltage — | = 5.0 | V_|1H25°6, I-11, Vas-0V @ tr ___ [Reverse Recovery Time _ | = [250 [300 [ns [Tu=25°0, k=-t1A Qn Reverse Recovery Charge | = [29 [36 [uc |didter00as © ton Forward Turm-On Time [Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo) Notes: ® Repetitive rating: pulse wiath limited by ‘max. junction temperature (See Figure 11) ® Vov=50V, starting Ts=25°C, L=6.7mH Re=250, las=-11A (See Figure 12) IspS-11A, difdtst50A/us, VoosVieRoss, Tys150°C @ Pulse width < 300 is; duty cycle <2%, 384-Ip, Drain Current (Amps) -Ip, Drain Current (Amps) sof 45H 20US PULSE WIOTH a To = 25% Ye wo -Vps; Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25°C Vos = Sov — 20us PULSE_MTDTH| ——a eH -Vas, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics -Ip, Drain Current (Amps) Fos(ony, Drain-to-Source On Resistance (Normalized) IRF9640 HH 20us PULSE WIOTH| Tg = 150°C tof 0 wo -Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=150°C. Wes = -100 0.0 “gp ad 25020 H0 60 8) 100 120 440 360 Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. TemperatureIRF9640 TER a Weg = 07 = a Dem TTT T iss = Sas * Soar Sas SHORTED ete Yigg * ~A60V > oo 3 103 Ctoay f= ot TIS: Sc et ‘aia 8 T i g t §- SSP 3, 3 1 § =F ae 5 - 8 @ 4 eae + 2 a T oss 6, | ao SH 3 r ret oc > [aes oT A pH 7 see rime 13 108 sot 0 10 20, 30 a0, 50 60 Vos. Drain-to-Source Voltage (volts) Qa, Total Gate Charge (nO) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 107, Se eT 3 arose) 2 5 E i = = af zg i £ Coie 38 5 & Eo oo 2 3 © agit 8 & é $ 8 2Praezste : ss , [Siete pase fy 10 25 3 TO S0 rT Tc) -Vsp, Source-to-Drain Voltage (volts) -Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Sate Operating Area Forward VoltageTOR) IRF9640 -Ip, Drain Current (Amps) Ro Vos WW Dus. Pulee Width < th2 Duly Factors 0.1% gon) te ta en 4 Ves: 10%: os 35 — 98 905 as 80 90%. Tc, Case Temperature (°C) Vos. Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature I TU eat Thermal Response (Zajc) TEBE Zoe TIP wien TPMfary racron, o-ty/te oem tera ® Ben Te 108 10-4 10°73 10-2 On t 10 ty, Rectangular Pulse Duration (seconds) Fig 11, Maximum Effective Transient Thermal Impedance, Junction-to-Case so?IRF9640 Vary tpto obtain VS. L TOR requited IAs DUT. fae x ‘9 Rg Pl - ease Yoo 3 orton -1i8 10 4 las = ona = a 2 Fig 12a. Unclamped Inductive Test Circuit 2 bald I 2 hs —— ---- 2 B so 2 Vbs. ui SES fos 3 Sh Yoo 25 0 75 100 125 150 Starting Ty, Junction Temperature(°C) }V(eR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ——> Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator fame Type as DUCT i soxe. [ave p20 oma EL fe * Ip Curent Sampling Resistors Fig 13b. Gate Charge Test Circuit pvos Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1506 Appendix B: Package Outline Mechanical Drawing Appendix E: Optional Leadforms - See page 1525 — See page 1509 Appendix C: Part Marking Information - See page 1516 International