Homework #2

Due on May. 31, 2019

1. The generalized MOSFET scale length is given by

1  ti  1   W dm 
tan   tan    0
i     Si   

For Si = 11.70, i = 7.80, ti = 50 nm, and Wdm = 10.0 nm, find the three longest
eigenvalues 1, 2, 3. Take L  21; what is the ratio between exp(L/21) and
exp(L/22)?

Solution:

1.0

0.8

0.6
29.12nm 56.93 nm
0.4
nm
0.2
10^-9F/m

0.0

-0.2

-0.4

-0.6 15.22 nm
-0.8

-1.0
0 10 20 30 40 50 60 70 80 90 100
nm

  ti    W dm 
 S i ta n     i ta n    0
     

From the figure above 1 ~56.93 (nm), 2 ~29.12(nm), 1 ~15.22(nm).

e x p (   L / 2 1 )
By substituting number, 1 ~56(nm) ~ 2 0 .7 6 , when L ~ 21
exp ( L / 22 )
2. For a MOST, we have the following relationship

1  ti  1   W dm 
tan   tan    0
i     Si   

where  is the scale length, ti is the thickness of the high k dielectric film, Wdm is the
depletion width of the channel, i and Si are the permittivity’s of the high k dielectric
film and silicon. Show that:

 Si
(a)   W dm  ti when Wdm >> ti.
i

i
(b)   ti  W dm when ti >> Wdm.
 Si

Solutions:

 t     1  W d 
 Si tan  i    i tan   
 
  0

 1   1 
(a)
 ti   1  W d 
  Si  i

  0

 tan   x    tan x and tan x  x where x is small 
1  1 

 Si
 1  W d  ti .
i

(b) Similar to (a)

   1  t i    W d 
 Si tan       i tan 
 
  0

 1   1 

  1  t i   W d
   Si 

  i

 0  tan   x    tan x and tan x  x where x is small 
 1  1

i
 1  ti  Wd .
 Si
3. Consider an n-channel MOSFET with 20 nm thick gate oxide and uniform p-type
substrate doping of 1  1017 cm-3. The gate is a n++ poly gate.
(a) What is the threshold voltage? Sketch the band diagram at threshold condition,
 s  2 B .
(b) What is the threshold voltage if the reverse bias of 1 V is applied to the substrate?
Sketch the band diagram at threshold.
(c) What is the scale length of this device and how short can the channel length be
reduced to before severe short-channel effect takes place?

Solution: