Module:5

Transistors- Device
Perspective:

Dr. B. Bindu,
Associate Professor,
SENSE
 Outline
Bipolar Junction Transistor: Device structure and physical operation,
current – voltage characteristics.
Field Effect Transistor (FET): MOS Capacitor: Device Structure and
mode of operation, C- V Characteristics, Threshold Voltage.

Ref: Neamen Book (Chapters 3 & 5)

 MOS Field Effect Transistor
Two terminal MOS strutcure:
Accumulation & Inversion in P-Type Substrate
Depletion & Inversion in P-Type Substrate
Accumulation & Inversion in N-Type Substrate
n-Channel Enhancement-Mode MOSFET
N-Channel MOSFET Operation
N-Channel MOSFET
N-Channel MOSFET
Current Characteristics

LINEAR REGION

SATURATION REGION
P-Channel MOSFET
Q. Calculate the current in an n-channel MOSFET.

Consider an n-channel enhancement-mode MOSFET with the

following parameters: VTN = 0.4 V, W = 20 μm, L = 0.8 μm, μn =
650 cm 2 /V–s, t ox = 200 Å, and tox = (3.9)(8.85 × 10 −14 ) F/cm.

Determine the current when the transistor is biased in the saturation

region for (a) vGS = 0.8 V and (b) vGS = 1.6 V.
 Symbols:

P-MOSFET
N-MOSFET
Depletion Mode MOSFET
Current Characteristics
Bipolar Junction Transistors
 Bipolar Junction Transistors (BJTs)

Forward-Active Mode Operation Base–Emitter junction forward biased and Base–

Collector junction reverse biased
 BJT Currents
Emitter Current

Collector Current

Base Current
 Current Relationships

Solving iB from eqn. (2) and substituting in (3), we get

Problems:
Symbols
Common Base Current Characteristics
Common Emitter Amplifier

pnp
npn
Early Effect