VISHAY

BYW82 to BYW86
Vishay Semiconductors

Standard Avalanche Sinterglass Diode

Features
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading

Applications
Rectification, general purpose
949588
Mechanical Data
Case: Sintered glass case, SOD 64

Terminals: Plated axial leads, solderable per Mounting Position: Any

MIL-STD-750, Method 2026 Weight: 860 mg, (max. 1000 mg)
Polarity: Color band denotes cathode end

Parts Table
Part Type differentiation Package
BYW82 VR = 200 V; IFAV = 3 A SOD64
BYW83 VR = 400 V; IFAV = 3 A SOD64
BYW84 VR = 600 V; IFAV = 3 A SOD64
BYW85 VR = 800 V; IFAV = 3 A SOD64
BYW86 VR = 1000 V; IFAV = 3 A SOD64

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Parameter Test condition Sub type Symbol Value Unit
Reverse voltage = Repetitive peak reverse see electrical characteristics BYW82 VR = 200 V
voltage VRRM
see electrical characteristics BYW83 VR = 400 V
VRRM
see electrical characteristics BYW84 VR = 600 V
VRRM
see electrical characteristics BYW85 VR = 800 V
VRRM
see electrical characteristics BYW86 VR = 1000 V
VRRM
Peak forward surge current tp = 10 ms, half sinewave IFSM 100 A
Repetitive peak forward current IFRM 18 A
Average forward current IFAV 3 A
Pulse avalanche peak power tp = 20 µs, half sine wave, Tj = 175 °C PR 1000 W

Document Number 86051 www.vishay.com

Rev. 5, 07-Jan-03 1
BYW82 to BYW86 VISHAY
Vishay Semiconductors

Parameter Test condition Sub type Symbol Value Unit

Pulse energy in avalanche mode, non I(BR)R = 1 A, Tj = 175 °C ER 20 mJ
repetitive (inductive load switch off)
i2*t-rating i2*t 40 A2*s
Junction and storage temperature range Tj = Tstg - 55 to °C
+175

Maximum Thermal Resistance

Tamb = 25 °C, unless otherwise specified
Parameter Test condition Sub type Symbol Value Unit
Junction ambient l = 10 mm, TL = constant RthJA 25 K/W
on PC board with spacing 25mm RthJA 70 K/W

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Sub type Symbol Min Typ. Max Unit
Forward voltage IF = 3 A VF 1.0 V
Reverse current VR = VRRM IR 0.1 1 µA
VR = VRRM, Tj = 100 °C IR 5 10 µA
Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms V(BR) 1600 V
Diode capacitance VR = 4 V, f = 1 MHz CD 40 60 pF
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr 2 4 µs
IF = 1 A, di/dt = 5 A/µs, VR = 50 V trr 3 6 µs
Reverse recovery charge IF = 1 A, di/dt = 5 A/µs Qrr 6 10 µC

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

R thJA – Therm. Resist. Junction / Ambient ( K/W )

40
100.000

30 10.000
I F – Forward Current ( A)

Tj=175°C
1.000
20 Tj=25°C
l l
0.100

10
0.010

TL=constant
0 0.001
0 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
94 9563 l – Lead Length ( mm ) 16360 VF – Forward Voltage ( V )

Figure 1. Max. Thermal Resistance vs. Lead Length Figure 2. Forward Current vs. Forward Voltage

www.vishay.com Document Number 86051

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VISHAY
BYW82 to BYW86
Vishay Semiconductors

3.5 350

PR – Reverse Power Dissipation ( mW )

VR=VRRM VR = VRRM
I FAV – Average Forward Current ( A )

3.0 half sinewave 300

RthJA=25K/W
2.5 l=10mm 250
PR–Limit
2.0 200 @100%VR

1.5 150
PR–Limit
1.0 100 @80%VR
RthJA=70K/W
PCB: d=25mm
0.5 50

0.0 0
0 20 4060 80 100 120 140 160 180 25 50 75 100 125 150 175
16361 Tamb – Ambient Temperature ( °C ) 16363 Tj – Junction Temperature ( °C )

Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature

1000 100
VR = VRRM 90 f=1MHz
CD – Diode Capacitance ( pF )
80
IR – Reverse Current ( mA )

70
100
60
50
40
10
30
20
10
1 0
25 50 75 100 125 150 175 0.1 1.0 10.0 100.0
16362 Tj – Junction Temperature ( °C ) 16364 VR – Reverse Voltage ( V )

Figure 4. Reverse Current vs. Junction Temperature Figure 6. Diode Capacitance vs. Reverse Voltage
Zthp – Thermal Resistance for Pulse Cond. (K/W

1000

VRRM=1000V RthJA=70K/W
100
tp/T=0.5
Tamb=25°C
tp/T=0.2

10 tp/T=0.1
45°C
tp/T=0.05
tp/T=0.01 70°C 60°C
tp/T=0.02
100°C
1
10–4 10–3 10–2 10–1 100 101 10–1 100 101
IFRM – Repetitive Peak
94 9568 tp – Pulse Length ( s ) Forward Current ( A )

Figure 7. Thermal Response

Document Number 86051 www.vishay.com

Rev. 5, 07-Jan-03 3
BYW82 to BYW86 VISHAY
Vishay Semiconductors

Package Dimensions in mm
Sintered Glass Case
SOD 64
Weight max. 1.0g
Cathode Identification ∅ 4.3 max.
technical drawings
according to DIN
specifications

∅ 1.35 max.

26 min. 4.2 max. 26 min. 94 9587

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VISHAY
BYW82 to BYW86
Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 86051 www.vishay.com

Rev. 5, 07-Jan-03 5
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