X-Ray Lithography

• In X-Ray Lithography one uses X-Rays to pattern structures into a polymer. Aspect ratio (height to footprint) is several Si
Photolithography
orders of magnitude higher. Due to very short wavelengths, X-Rays penetrate deep without diffraction. (positive resist)

• X-Rays degrade the polymer due to their very high energy. There are specialized X-Ray resists (most common: PMMA).
Si
• X-Ray masks are made of X-Ray absorbing metal (e.g. Au, Pb) structures on X-Ray transparent substrates (e.g. graphite). Photolithography
(negative resist)
• Process is used for making one master mold. Resist structure --> electroplating --> resist strip --> metal mold.
Electroplated mold
• The combination of lithography, electroplating and molding is known as X-Ray LIGA.
• LIGA is a German term which is the acronym for Lithographie, Galvanoformung, Abformung. The technology was
developed at the Institute of Microstructure Technology (IMT), Karlsruhe Institute of Technology, Germany in the 1980s. Conductive substrate
X-Ray Lithography
• X-Ray lithography is performed at Synchrotron radiation sources which are large, circular facilities. Electron beam is
accelerated in a magnetic dipole, which causes energy loss in the form of X-Rays. X-Ray Synchrotrons in India:
Indus-1 and Indus-2; at Raja
e- • Wavelength filtering à various applications. Ramanna Centre for Advanced
Technology, Indore
• Similar to X-Ray LIGA, UV LIGA can also be performed.
• UV lithography was developed as an inexpensive version of

A few meters to 1 km X-Ray lithography, since synchrotrons are very expensive.

X-Rays
(beam line) Other synchrotron parts : high vacuum chambers, bending
magnets, undulators, injectors, wiggler, RF cavity, screens etc.

Synchrotron radiation source !वा$त शमा), भारतीय /ौ1यो3गक6 सं!थान म;डी

 Electron Beam Lithography
E-beam
• If a beam of electrons is used for degrading the resist material (similar to X-Rays or UV light), it is known as electron-
beam lithography (EBL). Common EBL resists are PMMA, PC. Designs are fed into the system as CAD files. Si
E-beam lithography
• Critical dimension (CD) for a fabrication technique depends upon the beam diameter (rule of thumb: CD = 4 x beam dia)
• CD of EBL can be a few nm, however, it is an expensive method since high vacuum is required.
• Electron are drawn from thermionic sources (i.e., electrons are ejected from a material due to its high temperature,
which overcomes its work function). Cold sources are also available where high voltages are used for drawing electrons.
• Common electron sources: LaB6, W, Zr/O/W. Cold sources require higher vacuum. Top-view
• Electrons are ejected from an electron emitter (cathode), focused into a beam and guided by magnetic lenses.
• Challenges: Beam damage, electron scattering, charging of substrate, formation of islands, data generated defects etc.
• To avoid electron scattering, very high or very low energy electrons are used. High
energy electrons can penetrate deep without scattering. Low energy electrons have too
low energy to scatter much.
• After making a structure with EBL, metal film is deposited on top of it using sputtering/
evaporation.
• Resist is removed (lift-off) and metal pattern is obtained on wafer.
• Master molds can be made using EBL which can be used for making various soft/rigid
polymer structures (soft lithography).
!वा$त शमा), भारतीय /ौ1यो3गक6 सं!थान म;डी