Mathematical simulation for estimating

the potential of the hydrogen-terminated

diamond FET in the mm-wave range

Gennadiy Z. Garber

Journal of Computational Electronics

ISSN 1569-8025
Volume 15
Number 1

J Comput Electron (2016) 15:181-190

DOI 10.1007/s10825-015-0753-6

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 Author's personal copy
J Comput Electron (2016) 15:181–190
DOI 10.1007/s10825-015-0753-6
Mathematical simulation for estimating the potential of the
hydrogen-terminated diamond FET in the mm-wave range
Gennadiy Z. Garber1
Published online: 6 October 2015
© Springer Science+Business Media New York 2015
Abstract The estimation is based on the intrinsic transis-
tor large-signal lumped-element equivalent circuit with the
parameters and spline characteristics calculated by means
of a two-dimensional model of the transistor active region.
This model includes the quasi-hydrodynamic model of hole
transport (with very low mobility on the surface), equations
of the electric field, and dipole model of the hydrogen-
terminated diamond surface. The object of simulation is the
structure of a real 100-nm-long gate single-crystal diamond
transistor, which is recovered by fitting the simulated output
current–voltage characteristics to the experimental. Using the
frequency-domain simulation of a power amplifier with such
a transistor, a number of RF parameters (power-added effi-
ciency, output power, and others) are calculated as functions
of the maximum available power of the RF generator at fre-
quencies of 30 and 60 GHz.
Keywords C–H surface dipole · Energy balance equation ·
Equivalent circuit · Frequency-domain simulation ·
Hydrogen-terminated diamond · Quasi-hydrodynamic
model
1 Introduction
Figure 1 of [1] shows the output power and operating
frequency required for specific devices in systems along
with the semiconductor materials. According to this power–
frequency–material diagram, FETs based on diamond are
B Gennadiy Z. Garber
gzgarber@gmail.com
http://www.gzgarber.narod.ru
1 Pulsar R&D Manufacturing Company, Moscow 105187,
Russia
promising as active elements in the mm-wave range. Publica-
tions concerning experimental verification of this statement
are scarce, so that mathematical simulation making it pos-
sible to calculate the RF parameters of the transistor (more
specifically, of a power amplifier on its basis) is becoming a
key issue for this wave range.
Article [1] contains enough information to simulate a
single-crystal diamond transistor with a 100-nm-long alu-
minum gate, whose extrapolated value of the power-gain
cutoff frequency (maximum oscillation frequency) is equal
to f max = 120 GHz. The structure of this transistor depicted
in Fig. 1 includes a dipole layer associated with the C–H
surface dipole shown, for example, in Figs. 5 and 11 of [2].
The physical parameters of the dielectric are equal to those
of diamond. Four other parameters (in particular, the 4-nm
thickness of the dielectric in Fig. 1) are taken such that the
calculated output current–voltage characteristics are close to
the measured ones (Fig. 2); these so called fitted (extracted)
parameters of the transistor structure will be obtained below.
2 Two-dimensional model of the intrinsic
transistor (IFET)
Assuming the absence of the impact ionization of semicon-
ductor molecules by electrons and holes under the operating
conditions of the transistor, we use the two-dimensional (2D)
quasi-hydrodynamic model of hole transport, which is simi-
lar to the model [3–5] of electron transport, in the following
extended form:
∂p
= −∇ j p , (1)
∂t
j p = γ μ p E p − ∇(γ D p p), (2)
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182 J Comput Electron (2016) 15:181–190

Fig. 1 Section of the transistor

with the dipole layer. The lower
part of the dipole, which is
considered as a delta-doped
layer of the p-type
semiconductor, is charged
negatively; the upper part is
delta-charged positively;
ys = 50 nm and yd = 52 nm are
the coordinates of the dipole
poles, i.e., of the maximums for
Ns (y) and Nd (y) in (5),
respectively


Electric field intensity E(x, y, t) is calculated from the
equations of the electric field,
 
∇ ε E = Q, (5)
E = −∇ϕ, (6)

where ϕ(x, y, t) is the electric potential and ε(y) is the

Fig. 2 Calculated (continuous lines) and measured (dashed lines) out-
put current–voltage characteristics of the 100-nm gate FET [1]
∂( pu) u − u0
= −∇ j pu + q j p E − p , (3)
∂t τp
 
j pu = γ κ p μ p E pu − ∇ γ κ p D p pu , (4)
where u(x, y, t) = 3kTh /2 is the mean kinetic energy of
holes; x and y are the horizontal and vertical coordinates
(Fig. 1); t is the time; k is the Boltzmann
 constant;
 Th (x, y, t)
∂ ∂
is the hole gas temperature; ∇ = ∂ x , ∂ y is the gradient
operator; u 0 = 3kT0 /2 is the mean kinetic energy of holes
in thermodynamic equilibrium; T0 is the lattice temperature
(in our case, it is set equal to 300 K); p(x, y, t), γ μ p (u),
γ D p (u) = (kTh /q)γ μ p , τ p (u), and κ p (u) are the concentra-
tion, mobility, diffusion coefficient, energy relaxation time,
and relative Peltier coefficient of holes, respectively; q is the
positive elementary charge; j p (x, y, t) and j pu (x, y, t) are
the hole flux density and hole energy flux density, respec-

tively; E(x, y, t) is the electric field intensity; and γ μ p E is
the hole drift velocity.
Coefficient γ is equal to 1 or constant γs , with γ = γs only
in the expressions for j px and j pux in the delta-doped layer.
The value of γs is defined as the ratio of the experimental
hole mobility on the surface [6] to the mobility away from it.
absolute permittivity of the semiconductor or dielectric; in
our case, the relative permittivity is equal to 5.7 [1] for both
the semiconductor and dielectric. Charge density Q is equal
to q[ p(x, y, t) − Ns (y)] in the semiconductor and to q Nd (y)
in the dielectric, where Ns (y) and Nd (y) are the concen-
trations of “ionized acceptors” (built-in negative charges)
and built-in positive charges, respectively (see the caption
to Fig. 1).
The kinetic coefficients for holes are calculated by the
formulas
 
μ p (u) = Vcc F(u) /F(u), (7)
 
τ p (u) = Tcc F(u) , (8)
 
κ p (u) = K cc F(u) , (9)
where Vcc (E us ), Tcc (E us ), and K cc (E us ) are the given field
dependences of the drift velocity, energy relaxation time,
and relative Peltier coefficient of the current carriers (holes),
respectively, and E us is the intensity of the uniform stationary
electric field.
Function F(u) appearing in (7)–(9) is zero at u ≤ u 0 and
is a solution to the energy balance equation,
q F Vcc (F)Tcc (F) = u − u 0 , (10)
at u > u 0 . This equation follows from (2) and (3) at ∇ =
∂/∂t = 0.
The dependences of Vcc , Tcc , and K cc on E us are calcu-
lated by the method of Appendix 1 and depicted in Fig. 3.
With these Vcc (E us ) and Tcc (E us ), the abovementioned solu-
tion to (10) at u > u 0 is unique.

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J Comput Electron (2016) 15:181–190 183

Fig. 3 The field dependences of Vcc (continuous line), Tcc (dashed),

and K cc (dash-dotted)

System (1)–(6) is considered in the transistor active region,

which is bounded by the vertical lines x = 0 and x = xr in
Fig. 1. The boundary conditions are the following:

• p = p0 (y) and Th = T0 at the left (x = 0) and right

(x = xr ) boundaries, respectively, where function p0 (y)
is depicted in Fig. 4a [a method for calculating function
p0 (y), along with ϕ0 (y) below, is considered in Appendix
2];
• The electric potentials at the left and right boundaries are
equal to ϕ(0, y) = ϕ0 (y) − ϕ0 (ys ) + ϕs and ϕ(xr , y) =
ϕ0 (y) − ϕ0 (ys ) + ϕd , respectively, where ϕ0 (y) is a func-
tion depicted in Fig. 4b and ϕs and ϕd are constants
given in calculating the characteristics and parameters
of the IFET equivalent circuit (in particular, the output
current–voltage characteristics of the active region) or are
determined by the external electrical circuit;
• The normal component of j p , j pu , and E is equal to zero
at y = 0 and 0 < x < xr ;
Fig. 4 a Hole concentration and b electric potential as functions of the
y coordinate for the left and right boundary conditions
• Equations (5) and (6) by the method of matrix elimination
[7] and then
• Equations (1) and (2) and, concurrently, (3) and (4) using
the locally one-dimensional scheme [7] with j px , j py ,
j pux , and j puy expressed similarly to the hole current
density in [8].
Then, we calculate the source, gate, and drain currents:
 

• The normal component of E equals zero in the contact- ∂

i s (t) = q j px − ε E x dydz, (11)
free parts of the dielectric (to the left and right of the gate ∂t
ver tical
at y = 55 nm); sour ce
 

• The electric potential of the gate, ϕg , is a given constant ∂

or is determined by the external electrical circuit (along i g (t) = −ε E y d xdz, (12)
∂t
with ϕs and ϕd ). gate
 

∂
i d (t) = q j px − ε E x dydz, (13)
At the semiconductor–dielectric interface, we require that the ∂t
ver tical
normal component of j p and j pu be zero at 0 < x < xr . drain
The above boundary conditions should be complemented
by initial conditions. They are either arbitrary or are deter- where j px = 0 in the dielectric and z is the third axis directed
mined by the 2D distributions of ϕ, p, and Th , which result normally to the plane of Fig. 1. In our case, the gate width
from the previous solution to (1)–(6). along the z axis is equal to 1 mm.
For solving the above initial-boundary value problem, we Also, we calculate the electrostatic induction vector flux
solve, at each time step, first to the gate (having the dimension of charge):

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184 J Comput Electron (2016) 15:181–190
 
qg (t) = εE y d xdz. (14)
gate

In (11) and (13), the designations “vertical source” and

“vertical drain” mean the left and right boundaries of the
active region, respectively, or the source and drain of the
IFET.
According to Section 2.4.3 of [9], the multiplication factor
of holes for the right contact-free part of the dielectric (to the
right of the gate at y = 55 nm, Fig. 1) is determined by
formula
1
Mp = ,
1−Φ
Fig. 5 Large-signal equivalent circuit of the transistor active region:
where i ch is the channel current generator; C gs and Rgs , the input capacitance
and resistance; and C gd , the transfer (feedback) capacitance
r −x g
x  ξ 
   
Φ= α p x g + ξ exp − α p xg + ξ  is uniform in Ugs + ϕb and nonuniform in −Uds ; Ugs,i +
0

0 ϕb and −Uds, j are the nodal coordinates; i = 0, 1, . . . , m;
 
j = 0, 1, . . . , n; and Uds,0 = 0. The values of Ugs,0 + ϕb ,
− αn x g + ξ  dξ  dξ (15)
Ugs,m + ϕb , and −Uds,n should be taken such that the grid
entirely covers the operating region of the IFET on the gate
is the ionization integral; αn (x) and α p (x) are the elec- bias – drain bias plane.
tron and hole ionization rates, which depend on the electric At each node of the grid, the initial-boundary value prob-
field intensity, E x (x); x g = 400 nm; and xr = 700 nm. lem for (1)–(6) is solved using a Visual C++ program
According to [10], αn (x) may be considered as 0, α p (x) = DIDFET (Distributions In Diamond FET), which is similar to
a p exp[−b p /|E x (x)|], where a p = 4 × 106 cm−1 and the DIHEMT program [4]. The 2D distributions of the elec-
b p = 1.1 × 107 V/cm or a p = 6 × 105 cm−1 and b p = tric potential, hole concentration, and hole gas temperature
0.8×107 V/cm. The avalanche breakdown is defined by con- at t = ∞, ϕ(x, y) = ϕ(x, y, ∞), p(x, y) = p(x, y, ∞),
dition M p = ∞ or Φ = 1. and Th (x, y) = Th (x, y, ∞), respectively, are filed. This file
Similarly, the ionization integral for the imaginary straight also contains
line between points (0, ys ) and (xr , ys ) in Fig. 1 is equal to
⎧ ξ ⎫ • The time dependences of the source, gate, and drain cur-
xr ⎨    
⎬ rents, i s (t), i g (t), and i d (t), calculated by (11)–(13);
 
Φs = α p (ξ ) exp − α p ξ  − αn ξ  dξ  dξ (16)
⎩ ⎭
0 0
and the breakdown condition is Φs = 1. In addition to i s , i g ,
i d , and qg , we calculate Φ and Φs by (15) and (16).
3 Calculating characteristics and parameters of
the IFET equivalent circuit
For the frequency-domain simulation of a power amplifier
with the p-channel transistor under consideration, we use
the HIFETA program [5] based on the IFET’s large-signal
lumped-element equivalent circuit model depicted in Fig. 5.
The calculation of the characteristics and parameters of the
equivalent circuit starts with constructing a rectangular grid
on the plane depicted in Fig. 6 with axes Ugs + ϕb = ϕg − ϕs
and −Uds = −(ϕd − ϕs ), where ϕb = 0.6 V is the built-
in potential [11] of the structure shown in Fig. 1. This grid
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• The electrostatic induction vector flux to the gate at t =
∞, qg (∞) = Q g , calculated by (14); and
• The values of the ionization integral at t = ∞, Φ and
Φs , calculated by (15) and (16).
Function Id (Ugs , Uds ) depicted in Fig. 7 (by unclosed
lines) is the dependence of i d (∞) = Id on Ugs and Uds .
Note that Id = Is = i s (∞), since the gate current at t =
∞ is absent. Function Q g (Ugs , Uds ) depicted in Fig. 8 (by
unclosed lines) is the dependence of qg (∞) = Q g on Ugs
and Uds .
The current–voltage characteristics of the transistor
depicted in Fig. 2 by continuous lines are calculated by means
of the IFET’s current–voltage characteristics, Id (Ugs , Uds ),
and parasitic resistances Rs = Rd = 5. Resistor Rs is
inserted between point (0, ys ) and the horizontal source
(Fig. 1), whereas Rd is inserted between point (xr , ys ) and
the horizontal drain.
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J Comput Electron (2016) 15:181–190 185

Fig. 6 Grid on the gate bias –

drain bias plane for the IFET. In
our case, Ugs,0 + ϕb = −1 V,
Ugs,m + ϕb = 5 V,
−Uds,n = 120 V, m = 12, and
n = 22

Fig. 7 Output current–voltage

characteristics of the IFET at
ϕb = 0.6 V (unclosed lines) and
cycles corresponding to the
maximum value of the output
RF power at frequencies of 30
GHz (continuous cycle) and 60
GHz (dashed and dash-dotted
cycles for L s = 0.06 and 0.1
nH, respectively)

The value of 5 is obtained by fitting the continuous lines
in Fig. 2 to the corresponding dashed lines. Also, the fitting
procedure yielded the following values:
• 4 nm for the dielectric thickness (Fig. 1);
• 8 × 1012 cm−2 for the sheet concentration of “ionized
acceptors” (negative charges) at y = ys corresponding
to Ns (y) in (5); and
• 4 × 1012 cm−2 for the sheet concentration of positive
charges at y = yd corresponding to Nd (y).
The values of 5, 4 nm, 8 × 1012 cm−2 , and 4 × 1012 cm−2
are the fitted parameters of the transistor structure or, in other
words, are extracted from the measured DC transistor char-
acteristics [1] depicted in Fig. 2 by dashed lines.
We put γs = 0, where γs is the constant in the
extended quasi-hydrodynamic model [see the paragraph next
to (1)–(4)]. To understand this choice, note that, accord-
ing to Fig. 7 in [6], the hole mobility on the surface of
hydrogen-terminated single-crystal diamond does not exceed
110 cm2 /(V × s) at a sheet carrier concentration exceeding
3 × 1012 cm−2 . The low-field mobility away from the sur-
face, μ0 in Appendix 1, is close to 2218 cm2 /(V × s). The
ratio of these two mobilities equals γs = 0.05.
The simulated current–voltage characteristics (continuous
lines in Fig. 2) remain practically unchanged after γs = 0.05
is substituted for γs = 0. Below we use γs = 0 when
simulating the RF characteristics of the amplifier given by
Fig. 9.
As in [5], we use the cubic spline construction to analyt-
ically continue the discrete dependences found by solving
(1)–(6) at the grid nodes on the gate bias – drain bias plane
shown in Fig. 6. Therefore, the dependences Id (Ugs , Uds )
and Q g (Ugs , Uds ) are called the spline characteristics of the
IFET equivalent circuit (Fig. 5).
In addition to the spline characteristics, two parameters
are used in the description of the IFET equivalent circuit:
• τgs = 0.1198 ps, the time constant of the resistor–
capacitor network and
• τch = 0.4867 ps, the time of current carrier transit
through the channel’s nonohmic part.

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Fig. 8 Charge–voltage
characteristics of the IFET at
ϕb = 0.6 V (unclosed lines) and
cycles corresponding to the
maximum value of the output
RF power at frequencies of 30
GHz (continuous cycle) and 60
GHz (dashed and dash-dotted
cycles for L s = 0.06 and 0.1
nH, respectively)

Fig. 9 AC electrical circuit of

the model amplifier: Rg , Rs , L s ,
and Rd are the parasitic
elements of the transistor and
L 1 , C1 , L 2 , and C2 are the
elements of the T-equivalent
circuit of the matching networks

We calculated these values for the grid node with coor-
dinates Ugs + ϕb = 1.5 V and −Uds = 50 V by the
method [5].
We also analyzed the filed values of the ionization integral,
Φ and Φs , at all nodes of the grid on the gate bias – drain bias
plane. Because these values are less than 1, the transistor is
operational and our assumption of the absence of the impact
ionization is acceptable.
4 Calculations for estimation of the transistor’s
potential
In the electrical circuit of the model amplifier shown in Fig. 9,
Rs = Rd = 5; this value is one of the results of the fitting
procedure considered above. According to [12], Rg = 0.3
and L s = 0.06 nH are used (at a gate width of 1 mm). We will
also use the value of L s = 0.1 nH, which was obtained by

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J Comput Electron (2016) 15:181–190 187

Table 1 Stability factor and

Frequency f (GHz) L s (nH) Stability factor L 1 (nH) C1 (pF) L 2 (nH) C2 (pF)
matching inductances and
capacitances 30 0.06 1.009 0.2233 0.2282 0.4928 0.02159
60 0.06 1.115 0.0496 0.1059 0.2931 0.01438
0.1 1.066 0.0245 0.0849 0.3434 0.01348

Fig. 10 a Power-added efficiency, b transducer power gain, c output RF power, and d input voltage standing wave ratio as functions of the maximum
available power of the RF generator at frequencies of 30 GHz (continuous lines) and 60 GHz (dashed and dash-dotted lines for L s = 0.06 and 0.1
nH, respectively)

fitting the simulated frequency dependence for the operating
power gain of the transistor under consideration, U ( f ), to the
experimental data of Fig. 4 in [1] (whose extrapolation gave
the abovementioned value of 120 GHz for the power-gain
cutoff frequency, f max ). The question of calculating U ( f )
will be considered below.
To get the small-signal operating point of the IFET close to
the grid node, for which τgs = 0.1198 ps and τch = 0.4867
ps were obtained, we apply biases of UG S = −0.2 V and
−U DS = 50 V to points G and D in Fig. 9, respectively.
Table 1 contains the values of the stability factor of the
transistor for the resulting small-signal operating point with
coordinates Ugs + ϕb = 1.49 V and −Uds = 47.83 V.
As in [12], we use the values of L 1 , C1 , L 2 , and C2 in
Fig. 9, which give the maximum of the output RF power of the
amplifier at MAP = 100 mW (abbreviation MAP stands for
maximum available power of the RF generator). These values
of L 1 , C1 , L 2 , and C2 collected in Table 1 are calculated
statistically according to Section 6.8 of [13].
For calculating the output power and other RF parameters
of the amplifier, we simulate the circuit depicted in Fig. 9
by the HIFETA program [5] in the frequency domain. This
program implementing the harmonic balance method (in our
case, for five harmonics of the input RF generator frequency)
uses the following characteristics and parameters of the IFET
equivalent circuit:

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188
Fig. 11 Operating power gain of the transistor under consideration
as functions of the frequency at L s = 0.06 nH (continuous line) and
L s = 0.1 nH (dash-dotted line)
• Id (Ugs , Uds ) and Q g (Ugs , Uds ) shown in Figs. 7 and 8,
respectively, and
• τgs = 0.1198 ps and τch = 0.4867 ps.
In addition to R (resistor), L (inductor), and C (capacitor),
the HIFETA library includes the linear multiport given by
Y-parameters (in the Touchstone format), the small-signal
equivalent circuit of the IFET (corresponding to Fig. 5), and
other linear elements.
Figure 10a–d show the RF parameters of the model
amplifier as functions of MAP, which are calculated at the
corresponding values of L 1 , C1 , L 2 , and C2 . In Figs. 7 and 8,
closed lines show the cycles corresponding to the maximum
value of the output RF power.
To get the abovementioned frequency dependence for the
operating power gain, U ( f ), the developed technique for cal-
culating the RF parameters was applied to the small-signal
operating point of the IFET with coordinates Ugs + ϕb =
1.47 V and −Uds = 17.26 V corresponding to the point
with coordinates UG S = 0.5 V and −U DS = 18 V of [1].
The proximity of the dash-dotted line in Fig. 11 to the cor-
responding data of Fig. 4 in [1] allowed to use L s = 0.1 nH
in the above simulation.
5 Conclusion
The calculated results are based on the verified assumption
that the impact ionization of diamond molecules by electrons
and holes is absent under the operating conditions of the tran-
sistor. According to these results generalized in Fig. 10a–d,
the model amplifier based on the single-crystal diamond
transistor [1] with the 100-nm-long and 1-mm-width gate
demonstrates the following RF parameters at frequencies of
30 and 60 GHz for L s = 0.06 nH:
• The maximum value of the power-added efficiency
equals 37.56 and 28.06 %, respectively;
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• The maximum value of the transducer power gain equals
14.58 and 8.62 dB;
• The maximum value of the output RF power equals 4201
and 3831 mW; and
• The input voltage standing wave ratio does not exceed
1.8 and 1.4.
When the parasitic source inductance, L s , increases from
0.06 to 0.1 nH, the following changes are observed at a fre-
quency of 60 GHz:
• The maximum value of the power-added efficiency
decreases to 21.36 %;
• The maximum value of the transducer power gain
decreases to 7.24 dB;
• The maximum value of the output RF power decreases
to 3167 mW.
Thus, despite the imperfection of the basic technologies
[1], a hydrogen-terminated diamond FET is a promising
active element for frequencies of up to 60 GHz. We did not
consider the upper frequencies because of inaccuracy of the
IFET equivalent circuit [5]. With the technique developed in
this work, one can trace the variations of the RF characteris-
tics when the lattice temperature grows and/or the transistor
structure changes.
The main computer time was spent on calculating depen-
dencies Id (Ugs , Uds ) and Q g (Ugs , Uds ), more specifically,
on solving the initial-boundary value problem for (1)–(6) at
13 × 23 grid nodes (Fig. 6). It took about 17 hours of the
3-GHz quad-core processor, Intel Core 2 Quad CPU Q9650.
Appendix 1: method for calculating kinetic
characteristics of holes in diamond
According to [3,14], the quasi-hydrodynamic model of hole
transport (1)–(4) at γ = 1, whose kinetic coefficients (as
functions of uniform stationary electric field) are determined
below, is derived from the Boltzmann equation for a parabolic
energy band at the following two assumptions. The so called
diffusion assumption is used, according to which the hole
distribution function contains only the zero- and first-order
spherical harmonics of the momentum. The second assump-
tion, which refers to “quasi” in the model’s name, postulates
that the characteristic time of changes in the electric field
(equal to a half of the period 1/ f ) is much greater than the
momentum relaxation time (about 0.1 ps in the collision term
of the Boltzmann equation).
Quantities Vcc (E us ), Tcc (E us ), and K cc (E us ) determined
below are the drift velocity of current carriers (holes), energy
relaxation time, and relative Peltier coefficient, respectively,
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J Comput Electron (2016) 15:181–190 189

in undoped diamond subjected to uniform stationary electric Using the carrier mobility,
field E us .  
According to [14] for a bulk semiconductor, we have the Mcc = Vcc E us /E us , (20)
following quadratic equation relative to the mean kinetic
energy of the current carriers, Ucc : we have the following chain of equalities for the relative
Peltier coefficient [4]:

2
2
Ucc Ucc 3π μ0 E us  
− − = 0, 2 5 d(Mcc ) Ucc
u0 u0 32 C ph K cc = + ·
3 2 d(Ucc ) Mcc
 
where μ0 is the low-field carrier mobility and C ph is the 2 5 d(Mcc ) Ucc d(Ucc )
= + · / . (21)
effective phonon velocity. It gives the field dependence of 3 2 d(E us ) Mcc d(E us )
the mean kinetic energy [9]:
If μ0 E us << C ph , (17) can be simplified [14]:
⎡  ⎤

2 
2 
  u0 3π μ0 E us μ0 E us
Ucc E us = ⎣1 + 1+ ⎦. (17) Ucc (E us ) ≈ u 0 1+
3π
. (22)
2 8 C ph 32 C ph

First, we will calculate the values of two constants, μ0 and Formulas (18) and (20)–(22) give
C ph .

If the electric field is low, μ0 E us << C ph , then [14] 4 3π μ0 E us 2

K cc (E us ) ≈ − , (23)
3 64 C ph

2 

3π μ0 E us  3π μ0 2
Vcc (E us ) ≈ μ0 E us 1− . (18) K cc (E us ) ≈ − E us . (24)
64 C ph 32 C ph

According to the experimental dependence Vcc (E us ) for If E us ≤ E 1 = 103 V/cm, we use (23) for calculating
holes at 300 K (depicted, for example, in Fig. 6.6 of [15]), we K cc (E us ). For E us > E 1 ,
have the following: Vcc = 2.12 × 106 and 3.65 × 106 cm/s  
at E us = 103 and 2 × 103 V/cm, respectively. These val-
  ξ1 · E us − E 1
K cc E us =   + ξ1 , (25)
ues and (18) give a system of two algebraic equations ξ1 · E us −E 1
1+
with two unknowns, whose numerical solution is μ0 = 1−ξ1

2218.33 cm2 /(V × s) and C ph = 4043295 cm/s.

where ξ1 = K cc (E 1 ) and ξ1 = K cc
 (E ) are constants deter-
1
The field dependence of the drift velocity depicted in Fig. 3
mined by (23) and (24). Formula (25) gives the analytical
by continuous line is calculated by (18) if E us ≤ E 2 =
approximation of the result of numerical calculation by (21).
2 × 103 V/cm and by
The K cc (E us ) dependence determined by (23) if E us ≤ E 1
  and by (25) if E us > E 1 is shown in Fig. 3 by dash-dotted
  μ2 × E us − E 2
=  line.
Vcc E us    α + v2 (19)
α μ2 × E us −E 2
1+ vs −v2
Appendix 2: method for calculating functions
if E us > E 2 . Here, vs = 10.5 × 106 cm/s is the sat- p0 ( y) and ϕ0 ( y)
uration velocity [15]; v2 = 3.65 × 106 cm/s; μ2 =
1038.34 cm2 /(V × s); and α = 1.3. Dependence (19) is To formulate conditions at the left and right boundaries of
close to the abovementioned experimental Vcc (E us ). the active region (x = 0 and x = xr in Fig. 1), consider
The field dependence of the energy relaxation time is the model stated by (1)–(6) in the one-dimensional approx-
depicted in Fig. 3 by dashed line. According to (10), it has imation under thermodynamic equilibrium [4,16]: ∂/∂ x =
the following form: ∂/∂t = 0, Th = T0 , and j py = j puy = 0. Equation (2) gives

  kT0 d
  Ucc E us − u 0 μ0 p0 (y) = μ0 E y (y) p0 (y),
Tcc E us =  , q dy
q E us Vcc E us
where μ0 is the low-field hole mobility and p0 (y) is the hole
where Ucc (E us ) and Vcc (E us ) are determined by (17)–(19). concentration (subscript 0 stands for thermodynamic equi-

123
 Author's personal copy
190 J Comput Electron (2016) 15:181–190

librium). Dividing both sides of this equation by kT0 μ0 p0 /q 9. Sze, S.M., Ng, K.K.: Physics of Semiconductor Devices,
and substituting expression (6) for E y , we obtain 3rd edn. Wiley, New York (2007). https://archive.org/details/
PhysicsOfSemiconductorDevices_855
  10. Isberg, J., Gabrysch, M., Tajani, A., Twitchen, D.J.: High-field
d d qϕ0 (y)
ln p0 (y) = − , electrical transport in single crystal CVD diamond diodes. Adv. Sci.
dy dy kT0 Technol. 48, 73–76 (2006). http://www.academia.edu/9500609/
High-Field_Electrical_Transport_in_Single_Crystal_CVD_Diam
where ϕ0 (y) is the electric potential. Integration yields ond_Diodes
11. Schreyvogel, C., Wolfer, M., Kato, H., Schreck, M., Nebel, C.E.:
Tuned NV emission by in-plane Al-Schottky junctions on hydro-
qϕ0 (y)
ln p0 (y) = − + C, gen terminated diamond. Sci. Rep. 4, 3634 (2014). doi:10.1038/
kT0 srep03634. http://www.nature.com/srep/2014/140110/srep03634/
full/srep03634.html
where C is a constant of integration. If ϕ0 (0) = 0 and 12. Garber, G.Z., Dorofeev, A.A., Zubkov, A.M., Ivanov, K.A.,
p0 (0) = Ns (0) = 1014 cm−3 , we have Kolkovsky, Yu.V.: Design of the SHF power FETs on diamond
base with assistance of computer simulation (in Russian). Elec-
  tron. Eng. Ser. 2(1), 9–16 (2013)
qϕ0 (y)
p0 (y) = Ns (0) exp − . (26) 13. Garber, G.Z.: Foundations of Excel VBA Programming
kT0 and Numerical Methods. PRINTKOM, Moscow (2013).
http://archive.org/details/FoundationsOfExcelVbaProgrammingA
The substitution of expressions (6) and (26) into (5) yields ndNumericalMethods
the following analog of the Shockley–Poisson equation [17]: 14. Moll, J.L.: Physics of Semiconductors. McGraw-Hill, New
York/San Francisco/Toronto/London (1964)

15. Han, S., Pan, L.S., Kania, D.R.: Dynamics of free carriers in
d dϕ0
− ε = Q(y), (27) diamond. In: Pan, L.S. (ed.) Diamond: Electronic Properties and
dy dy Applications. Kluwer Academic Publishers, Norwell (1995)
16. Widiger, D.J., Kizilyalli, I.C., Hess, K., Coleman, J.J.: Two-
   dimensional transient simulation of an idealized high electron
where Q(y) = q Ns (0) exp − qϕkT0 (y) 0
− N s (y) in the mobility transistor. IEEE Trans. Electron. Devices ED–32, 1092–
semiconductor and Q(y) = q Nd (y) in the dielectric. 1102 (1985)
17. Shockley, W.: Electrons and Holes in Semiconductors. D. Van
Using the quasi-linearization method [13], we solve (27)
Nostrand Company, Toronto/New York/London (1950). https://
with dϕ0 /dy = 0 at y = 55 nm. The resulting function, archive.org/details/ElectronsAndHolesInSemiconductors
ϕ0 (y), and function p0 (y) calculated by (26) are plotted in
Fig. 4a and b.

Gennadiy Z. Garber was

born in Moscow, USSR, in
References 1948. He received the engineer-
mathematician degree in applied
1. Kasu, M.: Diamond field-effect transistors as microwave power mathematics from the Moscow
amplifiers. NTT Tech. Rev. 8, 1–5 (2010). https://www.ntt-review. Institute of Electronic Machinery
jp/archive/ntttechnical.php?contents=ntr201008sf3.html#top in 1972, the PhD in solid-state
2. Rezek, B.: Atomic and Kelvin force microscopy applied on hydro- electronics and integrated circuit
genated diamond surfaces. New Diam. Front. Carbon Technol. design from the Moscow Insti-
15, 275–295 (2005). http://myukk.xsrv.jp/free_journal/download. tute of Radio Engineering, Elec-
php?fn=NDFCT494_full.pdf tronics, and Automatics in 1981,
3. Stratton, R.: Diffusion of hot and cold electrons in semiconductor the ScD in solid-state electron-
barriers. Phys. Rev. 126, 2002–2014 (1962) ics and microelectronics from the
4. Garber, G.Z.: Quasi-hydrodynamic modeling of heterostructure Highest Certifying Commission
field-effect transistors. J. Commun. Technol. Electron. 48, 114– of the USSR in January 1992,
117 (2003) and the Professor in computer science from the Highest Certifying
5. Garber, G.Z.: Estimation of the accuracy of the microwave FET Commission of the Russian Federation in 2008. He develops mathe-
equivalent circuit using the quasi-hydrodynamic model of electron matical models, numerical methods, and computer programs for CAD
transport. Solid-State Electron. 103, 115–121 (2015) of IMPATT and limiter diodes and circuits based on them, starting from
6. Williams, O.A., Jackman, R.B.: Surface conductivity on hydrogen 1975, and of field effect and bipolar transistors and transistor circuits
terminated diamond. Semicond. Sci. Technol. 18, S34–S40 (2003) from 1980. He is the author of 8 books and more than 60 articles.
7. Samarskii, A.A.: The Theory of Difference Schemes. Marcel
Dekker, New York (2001)
8. Scharfetter, D.L., Gummel, H.K.: Large-signal analysis of a silicon
Read diode oscillator. IEEE Trans. Electron. Devices ED-16, 64–77
(1969)

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