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    TKR 720 N

    Uploaded by

    Jose Gregorio Gomez
    The document appears to be a technical specification sheet for an NTE352 silicon NPN transistor intended for use in VHF power amplifiers and drivers from 136-175MHz. It lists the component's maximum ratings and typical electrical characteristics, including its power output capability of 100W, gain of 6dB minimum, and operating voltage of 12.5V. The specification sheet provides designers with the key parameters needed to utilize the transistor in RF power and driver applications.

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    TKR 720 N

    Uploaded by

    Jose Gregorio Gomez
    34 views116 pages
    The document appears to be a technical specification sheet for an NTE352 silicon NPN transistor intended for use in VHF power amplifiers and drivers from 136-175MHz. It lists the component's maximum ratings and typical electrical characteristics, including its power output capability of 100W, gain of 6dB minimum, and operating voltage of 12.5V. The specification sheet provides designers with the key parameters needed to utilize the transistor in RF power and driver applications.

    Original Description:

    repetidor vhf

    Original Title

    tkr720n

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    The document appears to be a technical specification sheet for an NTE352 silicon NPN transistor intended for use in VHF power amplifiers and drivers from 136-175MHz. It lists the component's maximum ratings and typical electrical characteristics, including its power output capability of 100W, gain of 6dB minimum, and operating voltage of 12.5V. The specification sheet provides designers with the key parameters needed to utilize the transistor in RF power and driver applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    34 views116 pages

    TKR 720 N

    Uploaded by

    Jose Gregorio Gomez
    The document appears to be a technical specification sheet for an NTE352 silicon NPN transistor intended for use in VHF power amplifiers and drivers from 136-175MHz. It lists the component's maximum ratings and typical electrical characteristics, including its power output capability of 100W, gain of 6dB minimum, and operating voltage of 12.5V. The specification sheet provides designers with the key parameters needed to utilize the transistor in RF power and driver applications.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
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    NTE352
    Silicon NPN Transistor
    RF Power Amp, Driver

    Description:
    The NTE352 is a 12.5V Class C epitaxial silicon NPN transistor in a W65 type package designed
    primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability
    under rated operating conditions. Internal impedance matching ensures optimum power gain and
    efficiency over the 136−175MHz band.

    Features:
    D 175MHz
    D 12.5 Volts
    D POUT = 100 Watts
    D GP = 6.0dB Minimum
    D Common Emitter Configuration

    Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)


    Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
    Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
    Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
    Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
    Collector Current (Peak), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
    Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W
    Operatin Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
    Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65°C/W

    Electrical Characteristics: (TC = +25°C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    Static Characteristics
    Collector−Base Breakdown Voltage V(BR)CBO IC = 50mA, IE = 0 36 − − V
    Collector−Emitter Breakdown Voltage V(BR)CES IC = 100mA, VBE = 0 36 − − V
    V(BR)CEO IC = 100mA, IB = 0 18 − − V
    Emitter−Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 4 − − V
    Collector Cutoff Current ICES VCE = 15V, IE = 0 − − 15 mA
    ON Characteristics
    DC Current Gain hFE IC = 5A, VCE = 5V 10 75 150

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    Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    Dynamic Characteristics
    Output Power POUT VCC = 12.5V, f = 175MHz, 100 − − W
    PIN = 25W
    Power Gain GPE 6.0 − − dB
    Output Capacitance Cob VCB = 12.5V, f = 1MHz − − 390 pF
    Impedance Data
    Input Impedance ZIN f = 175MHz 1.5 − j0.9 Ω
    Clamping Impedance ZCL f = 175MHz 0.5 − j1.0 Ω

    .205 (5.18) .215 (5.48)

    .122 (3.1) Dia


    E B
    .405
    (10.3)
    Min

    C E

    .155 (3.94)

    .500 (12.7) Dia


    .005 (0.15)

    .270
    (6.85)

    .160 (4.06) .725 (18.43)

    .975 (24.78)

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