E&TE - ESE - Mains - 2020 - Paper - 1 by Ace Academy

ELECTRONICS & TELECOMMUNICATION ENGINEERING
ESE_MAINS_2020_PAPER – I
Questions with Detailed Solutions
SUBJECT WISE WEIGHTAGE
S.No NAME OF THE SUBJECT Marks
01 Basic Electrical Engineering 40
02 Basic Electronics Engineering 60
03 Materials Science 84
04 Electronic Measurements & Instrumentation 60
05 Network Theory 128
06 Analog Electronics 56
07 Digital Electronics 52
2 ESE 2020 MAINS_Paper_1 Solutions
SECTION - A
01.(a)(i) Consider the circuit shown below. The power supply V+ has a dc value of 10V on which is
superimposed a 60 Hz sinusoid of 1V peak amplitude, i.e. has a power supply ripple.
Calculate both the dc voltage of the diode and the amplitude of the sine-wave signal
appearing across it, assuming a 0.7 V drop across it at 1mA current.
V+
R = 10k
+
VD
 (6 M)
Sol:
(i) Given power supply V   10  Vm sin t  10  1sin 260 
V+
10K 11V
10V
ID VD
+ 9V

0
VD
Diode obeys a relation I D  ISe Vt   1
I 
VD  Vt n  D 
 Is 
(or)
 ID 
VD1  VD 2  Vt n  1 
 I D2 
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3 Electronics & Telecommunication Eng.
Given VD  0.7 V when I D  1mA
 ID 
VD1  0.7  26mVn  1 
 1m 
Let as consider V   10V, 11V, 9V
10  0.7
Case1 V   10V  I D1   0.93 mA
10K
 0.93m 
VD1  0.7  26mVn   0.698V
 1m 
11  0.7
Case2 V   11V  I D1   1.03m
10K
1.03m 
VD1  0.7  26mVn    0.70076V
 1m 
9  0.7
Case3: V   9V  I D1   0.83m
10K
 0.83m 
VD1  0.7  26mVn   0.6951V
 1m 
V+ VD
0.7007
10V 0.698V
0.698
11V 0.70076
0.6951
9V 0.6951
0

01.(a)(ii) For the V-I characteristics as shown below, draw the circuit model using an ideal diode.
I
–IR V
(6 M)
Sol:
I
0, I1
-I1R 0 V
Equation of line (0,I1) (–I1R,0)

y 2  y1
y  y1  x  x 1 
x 2  x1
I1
I0   V  I1R  I
0    I1R 
+
1
I  V  I1 R  R
R V
I1 R
(or)

V  IR  I1R
(a) For I  I1  V  0
I
(b) For V  0  V  IR  I1R
+
R
V
I1 R


01. (b) The circuit shown below is to be used as ramp generator to produce a 1V ramp output when
the input is 3V, 0.1ms pulse with a 1ms interval between pulses. The supply voltage is 15V
and a load resistance of 100k is connected at the output terminals. Assume Q1 has
hFE(min) = 50. Determine values of R1, R2 and C1.
VCC = 15V
R2 I1
R1 I(dis.)
Q1
IB V0
Vi C1
(12 M)
Sol:
+15V
R2=1kΩ [Let]
R1 V0
C 100kΩ
+
Vin ~
_
3V 1msec
Vin
0
0.1m
Operation (1) If Vin  3V, the transistor is ON.

Capacitor discharges through the transistor
V0  VC  VCE(sat )  0V

2. If Vin  0V, the transistor is off. capacitor charges. The final value of capacitor is almost 15V.
The wave form looks almost linear when it charges to 1V in 1msec duration (through the
path is exponential)
3V
Vin
1V
VC=V0
0
1msec
+15V
1kΩ
1k||100k=0.99k
≡
100kΩ 15(100)
 14.85V
101
Rth
VC t   14.851  e  t /  
 
when t  1m sec  Vc t   1V
 1m 
  
1  14.851  e      14.34 m sec
 
 
   14.34m sec  R th C
14.34m = 0.99 [C]
for sat condition

IC
IB 

I C max 
15  1 / 1k
200 +15V
3  0.7
IB  1kΩ
RB
I B  I c max /  +
1V 100kΩ
3  0.7 14m

RB 200
R B  32.857 k
01. (c) A 40 F capacitance is charged to store 0.2J of energy. An uncharged, 60 F capacitance is

then connected in parallel with the first one through perfectly conducting leads. What is the
final energy of the system? (12 M)
Sol: A 40F charged to 0.2 J
1 1
Wc1  c1v12  0.2  40 v12
2 2
0.4  40  106  v12 
104  v12  v1  100 volts
It is connected in parallel with 60F uncharged capacitor
Capacitor combination voltage vC 40F

Vc 60F
V C  V C 100  40  60  0 +
100V 
VC  1 1 2 2   40V
C1  C2 (40  60)
1
Total energy = WCT  CTVC2
2
1
 40  60  106   40  =0.08J
2
WCT 
2

01. (d) Identify magnitude of the Burgers vector for a material having cubic crystal structure, if the
o
density, atomic weight and lattice constant are 7870 kg/m3, 55.85 g/mol and 2.86 A ,
respectively. (12 M)
Sol: Given data:

Cubic crystal structure
Density = 7870 kg/m3
Atomic weight = A = 55.85 g/mol
o
Lattice constant = 2.86 A
n  AW
Theoretical density =
AN  VVC
n  55.85
7870 
6.023  10 23  (2.86  10 10 ) 3
n≃2
From the above, the crystal structure of metal in body centered cubic (BCC) structure
This slip direction in BCC structure is [111]
a
Burgers vector  [111]
2
a
 [12  12  12 ]1/2
2
a 2.86  3 o
  3 = 3.502 A
2 2

01. (e) Calculate Vx in the circuit shown in the figure using the method of source transformation.
5 4 j13 
3 +
2090 , V +

o 10  Vx
j4  
(12 M)
Sol: By STT (source transformation technique)
4 j13
3 +
4 90A 5 10 Vx
j4 
5 53.1A
5  3  j 4  5  5 53.14 
  2.79 26.5
8  j 4  4 5 26.56
= 2.7926.57   2.5  j1.25 
By STT (2.5+j1.26) j13

4
+
11.11 63.43 +
 10 Vx

By VDR
Vx 
11.11  63.4310 
 2.5  j1.25   4  j13  10
Vx  5.484   27.97 volts

02. (a) Find the current through the load resistance ‘RL’ using Thevenin’s theorem and hence
calculate the voltage across the current source for the circuit shown in figure. (20 M)
3
RL
1 4
3V
2 2A
Sol: Current in RL by using Thevenin equation

For V0C 3
RL 4
3V 1
2 2A
3
V0c
+ a b 4
3V   V
I=0 I=0 1A
+ 2A
3V 1 2V 2

By KCL at V
V 3 V
  2  2V  6  V  12
3 24
3V = 18  V = 6 volts
By KVL for VOC
 3  Voc  2  0
Voc=Vth=1V

For Rth (V  S.C, I  0 – C)
3
a b
Rth
4
2
Rth = (3 + 4) // 2
14
Rth = 
9
Thevenin’s equivalent circuit across RL
Rth a
14 I
Vth 1V 9 RL=1
Vth 1 9
I    0.39 A
Rth  RL 14  1 23
9
I  0.4 A
The voltage across current source
3
V1
3V V2
1 4
3V 2 2A
By KCL at V1
V1  3 V1 V1  V2
  0
1 2 4

4V1 – 12 + 2V1 + V1 – V2 = 0
7V1 – V2 = 12 ---------- (1)
By KCL at V2
V2  V1 V2  3
 2
4 3
3V2 – 3V1 + 4V2 – 12 = 24
7V2 – 3V1 = 36
 7V  36 
3V1 = 7V2 – 36  V1   2 
 3 
From (1)
7V1 – V2 = 12
 7V  36 
7 2  V2  12
 3 
49
V2  7 12  V2  12
3
46 8 12  3
V2  8 12  V2 
3 46
V2 = 6.26 Volts
02. (b) An abrupt Si p-n junction (A = 10-4 cm2) has the following properties at 300 K:
p-side n-side
Na = 1017 cm-3 Nd = 1015 cm-3
n = 0.1 s n = 10 s
p = 200 cm2/v-s n = 300 cm2/v-s
n = 700 cm2/v-s p = 450 cm2/v-s
Taken ni = 1.51010 cm-3

The junction is forward biased by 0.5V. Find
(i) forward current
(ii) current at a reverse bias of –0.5V. (20 M)

DP D n  KT
qv
Sol: I  qA  Pn  n P [e  1]
 LP Ln 
 qv 
I  I o e KT  1
 
ni2 (1.5  1010 ) 2

Pn   15
 2.25  105 cm 3
nn 10
ni2 (1.5  1010 ) 2

nP   17
 2.25  103 cm 3
Pp 10
For minority carriers

KT cm 2
DP   p  0.0259  450  11.66 on the n side
q s
KT cm 2
Dn   n  0.0259  700  18.13 on the P side
q s
LP  DP P  11.66  10  10 4  1.08  10 2 cm
Ln  Dn n  18.13  0.1  10 6  1.35  10 3 cm
D D 
I o  qA  P Pn  n n P 
 LP Ln 
 11.66 18.13 
 1.6  10 19  0.0001  2.25  10 5   2.25  10 3 
 0.0108 0.00135 
Io = 4.37  10–15A
i) Forward current at a forward bias of O.S.V
 0.0259
0.5

I  I o e  1
  ≃ 1.058  10–6 A
ii) Reverse current at a reverse bias of -O.S.V

 0.0259
0.5

I  I o e  1
  ≃ –Io
= –4.37  10–15A

02. (c) An InGaAs pin photodiode has the following parameters at a wavelength of 1300 nm:
ID = 4nA;  = 0.90; RL = 1k; Pin = 300 nW
Where Pin is incident optical power. The receiver bandwidth is 20 MHz.
Assume surface leakage current is negligible.
Determine
(i) mean-square shot noise current,
(ii) mean-square dark current and
(iii) mean-square thermal noise current.
Which noise is more severe and why? (20 M)
Sol: Primary photocurrent (Ip)

q  q
Ip  Pin  Pin
hf hc
(0.9)  (1.6  10 19 C )  (1.3  10 6 m)

IP   3  10 7 W
(6.625  10 34 J  s )  (3  108 m / s )
IP = 0.282 A
i) Mean square shot noise current (i2shot):

i2shot = 2qIPBe
= 2  (1.6  10–19 C) (0.282  10–6A) (20  106 Hz)
= 1.8  10–18 A2
or [i2shot]1/2 = 1.34nA
ii) Mean-square dark current (i2DB):

i2DB = 2qIDBe
= 2  (1.6  10–19 C) (4  10–9A) (20  106 Hz)
= 2.56  10–20 A2
or [i2DB]1/2 = 0.16nA
iii) Mean square thermal noise current (i2T):

4K B T
i T2  Be
RL

4(1.38 1023 J / K )(293K )

 Be  323 1018 A2
1K
or [i2T]1/2 = 18 nA
Thus for this receiver the rms thermal noise current is about 14 times greater than the rms shot
noise current and about 100 times greater than the rms dark current
03. (a) The entry point and exit point of X-rays on a power pattern taken from a cubic crystal
material could not be distinguished. Assuming one of the points to be the exit point, the
following S values were obtained:
S values: 311.95 mm, 319.10 mm and 335.05 mm.
o
The camera radius is 57.3 mm and Molybdenum K radiation of wavelength 0.7 A was
used.
Determine the structure and the lattice parameter of the material. (20 M)
Sol: Given Data:

X-Ray distraction method
S values
S1 = 311.95 mm
S2 = 319.10 mm
S3 = 335.05 mm
The camera radius = 57.3 mm
o
Wave length  = 0.7 A
From the Brag's law,
Si 
The Brag's angle of each characteristic line on the film follows the ratio,  i
Sn  n
Si = distance from the exit to the line of interest = 57.3 mm
Sn = distance from the exit to the entrance (θn = 90º)
2R 2  57.3
Sn    89.961
4 4
89.961
1   90  25.95
311.95

89.961
2   90  25.37
319.10
89.961
3   90  24.165
335.05
Q2 = h2 + k2 + l2
2a sin 

h 2  k 2  2
4a 2 sin 2 
2 
Q2
Example of Trial calculations on assumption of FCC
4 sin 2 
Qi sini (1) Q2 h2 + k2 + l2 hkl a
2
≃ 3(1.142)
25.95 0.437 1.5589 1.142 111 1.48
25.37 0.428 1.495 1.09 3(1.09) 111 1.48
4.16 0.409 1.365 1 3(1.00) 111 1.48
λ h 2  k 2  2 o
a  1.48 A
2sinθ
o
Lattice parameter is 1.48 A
Structure is FCC
03. (b) (i) Obtain the exact equivalent circuit (per phase) of three-phase induction motor.
(ii) A 6-pole, 3-phase, 50 Hz induction motor takes 50 kW power at 940 rpm. The stator
copper loss is 1.4kW, stator core loss is 1.6 kW, and rotor mechanical losses are 1kW.
Find the motor efficiency. (20 M)

Sol: (i) Equivalent circuit Analysis:

Equivalent circuit
A 3-phase wound rotor induction is very similar in construction to a 3-phase transformer. Thus,
the motor has 3 identical primary windings and 3 identical secondary windings-one set for each
phase. On account of the perfect symmetry, we can consider a single primary winding and single
secondary winding in analysing the behaviour of the motor.
When the motor is at standstill, it acts exactly like a conventional transformer, and so its
equivalent circuit is the same as that of a transformer.
Equivalent Circuit of Stator:
R1 X1
R2 Xm F
R1 : Resistance of the stator winding/ph

X1 : Leakage reactance of the stator/ph
Rn : Iron loss component
Xm: Magnetizing component EC induced emf stator winding Nw: Effective turns stator
Equivalent circuit of rotor
I2 R2 jX2
F2 – F1
R2: Rotor resistance/ph

X2: Leakage reactance of the rotor/ph
F2: EMF induced in the rotor/ph
I2: Rotor current/ph
F2: 8F20 ; X2 = 5X20

Exact equivalent circuit of the induction motor

R1 X1 I2 R2 jX2
R2 Xm L1 L2
The secondary side loop is excited by a voltage SF2. Which is also at a frequency sf1. This is the
reason why the rotor
SF22
I2 
R 22  (SX 22 ) 2
This expression can be modified as follows (diving numerator and denominator by S)

V1  V2
 100  22.86%
V1
R1 jX1 I2 R2 jX2
L2 1 
R2 Xm L1 R 2  1
s 
R2 1 
Now the resistance can be written as R2, R 2   1. It consists of two points
s s 
(i) The first part R2 is the rotor resistance itself and represents the rotor copper loss
1 
(ii) The second part is R 2   1.
s 
1 
R 2  1 is known as the load resistance R1 and is the electrical equivalent at the mechanical load
s 
placed on the motor shaft. In other words. The mechanical load on an induction motor can be
represented by a non-inductive resistance of the value.
1 
R 2  1
s 

Equivalent circuit of the induction motor referred to stator side

As in the case of transformer, in this case also, the secondary values may be transferred to the
primary values may be transferred to the primary and vice versa. As before, it should be
remembered that when shifting impedance on resistance from secondary to primary, it should be
divided by K2 whereas current should be multiplied by K. The equivalent circuit at an induction
motor all values have been referred to stator side is shown in the following figure.
R1 jX1 R2 jX2 a
1 
R2 Xm R 2  1
s 
Fig: Equivalent circuit of induction motor referred to stator side with load impedance
R jX
 R2 
 
R0 Xm  s 
Xm
Fig: Equivalent circuit of induction motor referred to stator side with load impedance
This is then the per-phase equivalent circuit of the induction machine, also called as exact
equivalent circuit, note that the voltage coming across the magnetizing branch is the applied stator
voltage, reduced by the stator impedance drop. Generally the stator impedance drop is any a small
fraction of the applied voltage.
From the equivalent circuit, one can see that the dissipation in R. represents the stator loss, and
dissipation in Ro, represents the iron loss. Therefore the power absorption indicated by the inner
part at the circuit must represent all other means at power consumption the actual mechanical
output, friction and windage loss components and the rotor copper loss components. Since the
dissipation in R '2 is rotor copper loss. The power dissipation in R '2 (1 – s)/s is the sum total of the
R 2
remaining in standard terminology, dissipation in I 22 is called the air gap power
s

(ii) Given data:

P = 6; f = 50 Hz, I/P = 50 kW
Nr = 940 rpm
Stator Copper loss = 1.4 kW
Stator Iron loss = 1.6 kW
rotor mechanical loss = 1 kW
=?
120  f 120  50
Ns    1000 rpm
P 6
N s  N r 1000  940
S   0.06
Ns 1000
 Stator O/P = Rotor I/P = Motor I/P – stator losses

= 50 kW – (1.4 + 1.6) kW
= 47 kW
 Rotor copper loss = 5 Rotor I/P
= 0.006  47kW
= 2.82 kW
 Gross Rotor O/P = Rotor I/P – Rotor loss
= 47kW – 2.82 kW
= 44.18 kW
 Net Rotor O/P = 44.18 kW – Rotor mechanical loss

= 44.18 kW – 1 kW
= 43.18 kW
O / P 43.18
 Efficiency,  =   100  86.36 %
I/P 50
03. (c) An industrial consumer is operating a 50 kW induction motor at a lagging p.f. of 0.8.
The source voltage is 230V rms. In order to obtain lower electrical rates, the customer wishes
to raise the p.f. to 0.95 lagging. Specify a suitable solution. (20 M)

Sol: PI/P = 50 kW
cos 1 = 0.8 lag  tan 1 = 0.75
Vs = 230 V
cos 2 = 0.9 lag  tan 2 = 0.48
In order to improve the power factor capacitor bank must be connected across the machine.
The VAR supplied by the capacitor bank is
= P[tan 1 – tan 2 ]
= 50103[0.75 – 0.48]
= 13.5 KVAR
V2
Reactive power, Q = 13.7 kVAR =
XC
V 2 230  230
XC    3.86 
Q 137  103
The capacitor of reactance 3.86  is to be connected to increase the p.f from 0.8 to 0.95.
04. (a) Figure below shows a discrete MOSFET amplifier utilizing a drain-to-gate resistance RG.
The input signal Vi is coupled to the gate via a large capacitor, and the output signal at the
drain is coupled to load resistance RL via another large capacitor. Analyze this amplifier
circuit to determine its small signal voltage gain, its input resistance, and the largest
allowable input signal. Assume Vt = 1.5 V, K’n (W/L) (process transconductance parameter)
= 0.25 mA/V2, and VA = 50V, where VA is the intercept on the VDS axis of the iD – VDS
characteristics when extrapolated. Assume that coupling capacitors are sufficiently large so
as to act as short circuit at the frequencies of interest.
VDD = +15V
RD = 10 k
RG = 10 M 
V0
+
 RL = 10 k
Vi
Rin 
The effect of channel length modulation on the dc operating point can be neglected (20 M)

Sol:
VDD
ID RD
+
IG = 0 RG VDS

+
VGS

Fig (a): circuit for determining the DC operating point
ii RG D
+ +
gmVgs
Vi + V ro RD RL V0
 gs
 
Rin
Fig (b)
ii RG ii  gmVgs
+ +
+ Vgs
Vi  R L V0
= Vi
 
Vi R L  R L || R D || ro
R in 
ii
Fig (c) simplified Amplifier Small-signal equivalent circuit
VGS = VDS = VDD – IDRD

with VDS = VGS, the NMOS transistor will be operating in saturation. Thus
1
ID  K n [VGS  VT ]2
2

1
ID   0.25  10 3 (VDD  I D RD  VT ) 2
2
8ID = [15 – 10 ID – 1.5]2
8ID = (13.5 – 10 ID)2
 ID = 1.06 mA
which corresponds to: VGS = VDS = 15 – 1.06 mA  10 k
= 4.4 V
and VOV = VGS – VT = 4.4 – 1.5 = 2.9 V
w
gm = Kn[VGS – VT) = K 1n .Vov  0.25  2.9  0.725mA / V
L
VA 50
ro    47 K
I D 1.06
R1L = RL ||RD|| ro = 10 || 10 || 47 = 4.52 K

Vo = (ii = gmVgs)R1L ………….. (1)
Vgs  Vo
ii  ……………(2)
RG
Substituting equation (2) in (1)
 1 
 1 
V V g m RG
Av  o  o   g m RL1  
Vi Vgs  RL1 
 1  
 RG 
R 1L
since RG is very large gm RG >> 1 &  1
RG
Voltage gain (Av): AV ≃ gm R1L

Av = – 0.725 mA/V  4.52 k = –3.3
RG RG 10M
Input resistance (Rin): Rin     2.33M
1  Av 1  g m RL 1  3.3
1
Largest allowable input signal (V̂i ) :
The largest allowable i/p signal (V̂i ) is considered by the need to keep the transistor in saturation
at all times, that is

VDS  VGS – Vt
Enforcing this condition with equality at the point VGS is maximum and VDS is minimum,
we write
VDSmin  VGSmax  Vt
VDS  | A V | V̂i  VGS  V̂i  Vt
since VDS = VGS, we obtain

Vt
V̂i 
| A v | 1
1.5
V̂i   0.35V
3.3  1
04.(b)(i) Define nanomaterials and classify nanomaterials on the basis of number of dimensions.
What are the different approaches for the preparation of nanomaterials? Discuss any one
method of preparation of nanomaterials from each approach. (10 M)
(ii) Explain how dislocation density increases on cold working. (10 M)
Sol:
(i) * At least one dimension of material is in nano-scale that is varying from 1 nm - 100 nm.
DNA & virus  40nm 
Ex: (1).  Nano material
Transistor  30nm 
50 nm
(2).
70 nm 30 nm
30 nm 80 nm
10 nm
10 cm 10 cm
10 cm
Types of Nano Materials:

1. Quantum Well: (One dimensional nanomaterial) (Two dimensional bulk material)
Reduction of size of bulk material upto the nano range in only one dimension and other two
dimensions are in normal range (or) bulk form and hence this material is known as one
dimensional nanomaterial.

* In Quantum well electron flow takes place in two dimension & in nano direction electron flow is
restricted.
10 cm 50 nm
10 cm 10 cm
10 cm
10 cm
* Graphene:
Graphene is a carbon made nanomaterial and graphene is a single layer of graphite.
* In graphene every carbon atom is covalently bonded with three carbon atoms and forms "two
single covalent bonds & double covalent bonds". It is also called SP2 hybridization. To break the
double covalent bond requires more energy and hence it is the hardest, strongest, thinnest
nanomaterial.
2. Quantum Dot: (Three dimensional nanomaterial) (Zero dimensional material)
10 cm 20 nm
10 cm 30 nm Ex: 1. Fullerence
10 nm
10 cm
2. Dendrimers
3. Quantum dot
* Reduction of size of bulk material upto the nanorange in all directions.

* Electron flow is completely restricted in all directions.
* Fullerenes:
Fullerenes are produced by folding single layer of graphite (or) graphene into spherical form.
* In Fullerenes both hexagon & pentagons present in the shape of soccer ball. In C60 fullerence,
12 pentagons & 20 Hexagons are present.

Applications:
1. Drug delivery
H P H
2. Gene therapy PH
Quantum Dot:
* It is a smallest size zero dimensional material and the size of quantum dot is less than (< 10 nm)
* In quantum dot, the surface atoms are having high energy levels with low wave length and inner
core atoms are having low energy and high wave length.
* By changing wavelength of the atom conduction of electron takes place and hence, these
materials are used in electronic industry as semi conductors.
* The structure of graphene is honey comb structure.
* The graphene is the highest electrical conductively material with -ve temperature coefficient of
resistivity.
C C C C
C C
Graphene Graphite
C C
3. Quantum Wire: (Two dimensional nanomaterial) (One dimensional material)
10 cm
30 nm
40 nm
10 cm
10 cm
10 cm
* Reduction of size of bulk material upto nano range in two dimensions and in third dimension the
size is in normal range.
* In Quantum wire electron flow takes place in only one direction
Ex: Carbon Nano Tube, Nano wire, Nano rod, Whiskers.

a) Carbon NanoTube:
* Carbon Nano Tubes are produced by folding single layer of graphite (or) graphene into a
cylindrical form and capped with hemispherical fullerene on both sides of material.
* The electrical conductivity of Nano material also depends on shape.
* The electrical conductivity of single wall nanotube different form the multi wall carbon
nanotube.
1. Top-Down Approach Method:
Principle: Cutting/Slicing of material
Bulk
Micro
Nano
Ex: Ball Milling Method

Advantages: Disadvantages:
1. Easy to produce 1. No uniform size
2. No skilled & low cost 2. Impurities
3. Crystalline defects generated
Methods:
1. Ball Milling
2. Lithography method  Photo lithography
 Electron lithography
3. Laser Ablation method
4. Plasma Arcing

Hard Balls
2. Bottom up approach Method:

Principle: Clustering of atoms and molecules
Atoms
Clustering
Molecules
Clustering
Nanoparticle
Ex: Chemical vapour deposition method:

Substrate
    


O2

CO2  C + O2
Advantages: CO2 | CO
1. Uniform size
2. Purity
3. No defects

Disadvantages:
1. More cost
2. Skilled
Methods:
1. Chemical vapour deposition method
2. Physical vapour deposition method
3. Sol gel Technique
4. Molecular self assembly method
(ii) Cold working is one of the strengthening mechanisms of applying mechanical force and deformed
permanently below re-crystallization temperature.
Total dislocation length
Dislocation Density =
Volume
In cold working process, number of point defects, line defects are increased by applying stresses
on the material. So dislocation density increased in cold working and there dislocations arrest the
dislocation motion so strength and hardness of material increased.
Yield
Strength 1040steel
% of cold work
1
04.(c)(i) The Burgers vector of a mixed dislocation line is [1 1 0]. The dislocation line lies along
2
the [1 1 2] direction. Find the slip plane on which this dislocation lies. (10 M)
(ii) Explain, why end centered tetragonal geometry does not exist. (10 M)

1
Sol: (i) The Burger's vector of a mixed dislocation line is [1 1 0 ]
2
Crystallographic direction = [1 1 2]
Consider the slip plane tube to be: (h k l)
From Wies zone law:

b  h  k  0 [on [110] ]  (1)
t  h  k  2  0 [on [112] ] (2)

from equation (1)
h = –k
–k + k + 2l = 0
l=0
Slip plane = (1 T 0)
(ii) To prove that a Base Centered Tetragonal lattice does not exist:
ABCDEFGH and BJICFKLG are two Base centered tetragonal unit cells joined together (see figure
below).
D C I
P R
A J
B
H G L
Q S
E K
In addition to the corner lattice points, top and bottom bases of the two unit cells have lattice points at
their center (P, Q, R and S). Consider the unit cell formed by joining the points B, P, C, R in the top
and Q, G, S, F in the bottom face. The side BP, PC, CR and RB are all equal and form the sides of a
square. Similarly the sides QG, GS, SF & FQ form the sides of a square. The side surfaces of this cell
are identical rectangle.
Hence it is a simple tetragonal lattice.
Hence a base centered tetragonal does not exist.

SECTION - B
05.(a)(i) Sketch the circuit of a one-shot using a 555 timer to provide one time period of 20 s.
If RA = 7.5 k, what value of C is needed? Also sketch the input and output waveforms,
when triggered by a 10 kHz clock for RA = 5.1k and C = 5nF. (6 M)
(ii) The logic OR gate can be used to fabricate composite waveforms. Sketch the output Vo of the
gate of figure (a) shown below if the three signals as shown below in (b) are impressed on the
input terminals. Assume the diodes are ideal. (6 M)
V
D1
+ 3 V3
D2 2 V2
+ 1 V1
V1 D3 6 t
+ 1 2 3 4 5
V2 + 1
V3 Vo 2
   
(a) (b)
Sol:
(i)
+VCC
RA=7.5kΩ 5kΩ
Reset
Threshold
+
-
2/3Vcc R
5kΩ Inverter
1/3Vcc + S Q O/P
trigger
-
C 5kΩ
Discharge
Trigger ckt

Let us assume, capacitor charges from VCC towards 2/3 VCC
Q=1
R S Q O/P
VC > 2/3 VCC 1 0 Transistor ON
1 0
Before Capacitor discharge
trigger 0
VC = 0 0 0 0 (Previous state)
Let us give trigger

for a short
duration
0 1 Transistor OFF
VC = 0 0 1
Capacitor discharge
After VC > 1/3 VCC 0 0 0 0 (Previous state)
VC > 2/3 VCC 1 0 1 0 Transistor ON

Capacitor discharge
VC = 0 0 0 1 0
2/3 Vcc
VC
0
V0


VC t   VCC 1  e  t RC  +VCC
R
At t  T VC t   2 / 3 VCC

2 3 VCC  VCC 1  e  T RC  C
T  1.1RC  20Sec
1.1  7.5k  C  20
C  2.42  10F
 2.42 nF
0.1msec
Trigger
0
50sec
After 28.05sec
 o/p of upper op amp R = 1
V0  o/p of lower op amp S = 1
0 28.05sec
Flip flop is under race around condition
Output is indeterminate
R A  5.1K
C  5nF
T  1.1RC  28.05 Sec
VC > 2/3 VCC

+
 1
2/3VCC R
1/3VCC S Q
+
 1
CLOCK (Race around)

(ii)
V1
V2
V0=highest (V1, V2, V3)
V3
V0
3 V3
2
V2
V1
V0 1
1 2 3
05. (b) A dc voltage of 100 v is suddenly applied in the network shown in the figure. Find the
transient currents in both the loops and obtain the transient voltage across the capacitor.
50  (12 M)
+
R1
100 V R2 50  1 F
i1 i2

Sol:
50 Vc(t)
i2(t)
iR(t)
+Vc
100V i 50 i2
1F
For first order R – C network the voltage across capacitor Vc (t )  Vc ()  Vc (0)  Vc ()  e  t / RC
Vc (0)  0 Vc ()  ? At t = , open circuit

50
100V 50 Vc()=50V
Time constant   R eq C   50 / /50  .1 F
= 25Sec
Vc (t )  Vc ()  Vc (0)  Vc ()  e  t / RC
= 50  (0  50)e t /25 
Vc (t )  50 1  e  t /25  Volts t  0
cdVc (t )
For i2 (t ) 
dt
   1   
= 1 F 50  0  e  t /25    
   25   
i2 (t )  2e  t /25  amps t  0
Vc
iR (t )    i1  i2 
R
50 1  e  t /25  
  i1  i2 
50
i1  1  e  t /25   2e  t /25 
i1 (t )  1  e t /25   amps t  0
Voltage across capacitor
Vc ( t )  50(1  e  410 t ) volts

4
Transient loop currents
i1 ( t )  (1  e  410 t ) amps t  0
4
i 2 ( t )  (2e  410 t ) amps t  0

4

05. (c) Predict and draw the crystal structure of MgO and compute its theoretical density.
o o
(Give Ionic radius of Mg++ ion, rMg  = 0.72 A and ionic radius of O   ion, rO   = 1.40 A ;
atomic masses of ‘Mg’ and ‘O’ are 24.31 g/mol and 16.00 g/mol, respectively, Avogadro’s
Number = 6.0231023 g/mol) (12 M)
Sol: Given data:
o
rMg++ = 0.72 A
o
ro-- = 1.40 A
Atomic masses of ions
Amg = 24,31 g/mol
Ao = 16 g/mol
Avogadro's number (AN) = 6.023  1023 g/mol
n mg  A mg  n o  A o
Theoretical Density =
Vvc  AN
Mgo is a rocksalt structure with effective number of cations and anions = 4
nMg = 4, no = 4
Relationship between lattice parameters and ionic radius
2(rMg + ro) = a
o
a = 2 (0.72 + 1.4) = 4.24 A = 4.25  10–10 m
Volume of unit cell = VUC = a3 = 76.22  10–30 m3
4  24.31  4  16
Theoretical Density =
76.22  10 30  6.023  10 23
= 0.3512  107 g/m3
= 0.3512  104 kg/m3
= 3512 kg/m3

05. (d) A digital ramp A/D converter has the following values:
Clock frequency, fc = 1MHz
Threshold voltage, VT = 100 V
D/A-Vref. = 10.24 V and number of input bits = 10
Determine:
(i) Digital/equivalent representation for Vin = 4.872 V
(ii) Resolution of the A/D converters and
(iii) Conversion time required by this digital ramp A/D converter. (12 M)
Sol: A digital ramp ADC has the following values

Clock frequency = 1MHz
Threshold voltage = 100 V.
DACref = 10.24 V, number of input bits = 10.
(i) Digital equivalent representation for Vin = 4.872 V
VR 10.24
Stepsize   10  0.01 V  10mV
2N 2
Given threshold value VT = 100 V = 0.1 mV = 0.0001 V
i.e., DAC output ‘Vd’ has to reach 4.872V + 0.1 mV before the comparator switch to 0.
4.872V  0.0001V 4.8721V
Digital output   487.21  488
10mV 10 mV
i.e., Digital output = 48810 = 1E 816 = 0111101000.
(ii) ADC resolution = 10mV + VT = 10.1 mV
(iii) Conversion time = 488  1T = 488  1s = 488s
05. (e) For the lattice two port network of the figure shown, find the image impedance and the
image transfer constant. (12 M)
Z1
1 2
Z2 Z2
1 2
Z1

Sol: The given network is symmetrical and reciprocal network.

The z – parameter of the lattice network can be determined directly
z1  z2
z11  z22  
2
z2  z1
z12  z21  
2
The two part lattice network image impedances interms of ABCD parameters.
AB BD
zi1  , zi 2 
CD AC
And the image transfer constant
 BC 
  Tan 1  
 AD 
The ABCD parameters interms of z – parameter
z11
A  D is  Symmetry
z21
z 1
B ,C
z21 z21
z z  2
A   2 1   D and C  mho
 z2  z1   z2  z1 
2 2
 z2  z1   z2  z1 
    2 z1 z2
B  2   2 
 
 z2  z1  ( z2  z1 )
 
 2 
Image impedance
AB
z i1 
CD
2 z1 z2  z2  z1 
zi1   z1 z2  zi 2
2
 z2  z1 
zi1  zi 2  z1 z2 

BC
Image transfer constant   Tan 1
AD
2 z1 z2 2
  Tan 1
 z2  z1   z2  z1 
2
 z2  z1 
 
 z2  z1 
 2 z1 z2 
  Tan 1  
  z2  z1  
06. (a) A first-order thermometer was dipped in a temperature-controlled water bath maintained at
100oC and the following time-temperature readings were obtained:
Time (s) 0 4 8 12 16 20
Temperature (oC) 15 50 70 85 90 95
Estimate the time constant of the thermometer. Determine the steady state error when the
thermometer is required to measure the temperature of a liquid which is being heated at a
constant rate of 0.1oC/s. (20 M)
Sol: A time constant is equal to time taken to reach 0.632 of the difference between old & new value.
So temperature corresponding to the time constant is
T = 0.632 (100 – 15) + 15oC = 53.72oC + 15oC = 68.72oC
From given chart time corresponding to temperature 68.72oC ( 70oC) is 8 sec.
So time constant τ = 8 sec
The steady state error (ess) when the thermometer is required to measure the temperature of a
liquid which is being heated at a constant rate 0.1oC/sec is
ess = Aτ
Here A = 0.1 oC/sec
τ = 8 sec
ess = 0.1  8 = 0.8 oC

06. (b) A quartz Piezoelectric Transducer (PZT) has the following specifications: Area = 1cm2;
Thickness = 2mm; Young’s modulus = 91010 Pa; Charge sensitivity = 2 pC/N; Relative
permittivity = 5 and Resistivity = 1012 -cm. A 10pF capacitor and a 100 M resistor are
connected in parallel across the electrodes of the PZT. If a force F = 0.02 sin (103t) N is
applied, determine
(i) the peak-to-peak voltage generated across the electrodes and
(ii) the maximum change in crystal thickness. (20 M)
Sol:(i). The rms value of voltage under open circuit is

F dt
eo  
A or
The maximum value of voltage
dt F dt Fmax
e o max  2    (Fmax  2 F)
or A or A
Peak to peak value of voltage under open circuit:
dt Fmax
e o ( pp )  2e o max  2  
or A
2  2 10 12  2 10 3 0.02

  4  0.0036 10
8.85 10 12  5 10
 36 mV
The leakage resistance of crystal
t 1012  10 2  2  10 3
RP    2  1011 
A 10  4
Load resistance RL = 100 M
Conclusion is Rp >> RL so that we can neglect RP
or A
CP 
t
8.85 10 12  5 10 4

2 10 3
 22.125 10 13
C P  2.2110 12 F

The peak to peak output voltage under load conditions is
2dFmax t  C P R L 
CP   
 o  r A  1  2 (C P  C L ) 2 R 2L 

 1000  2.21 10 12  100  10 6 
2  2  10 12  0.02  2  10 3  
e O PP  
8.85  10 12  5  10 4
 
 1  1000  (2.21  10)  10 12  100  10 6  2


 36.15  103  0.634  2.21 101
 50.65  104
eO PP  5.065 mV
(ii) The maximum value of change in thickness is

Fmax t 0.02  2  103
t   4
 0.0044  109
YA 9  10  10
10
(t ) PP  4.4  10 12 m
06.(c)(i) Generate the logic function given in the table below using IC74151 8-to-1 MUX.
(10M)
Inputs Output
C B A Y
0 0 0 0
0 0 1 1
0 1 0 1
0 1 1 0
1 0 0 0
1 0 1 0
1 1 0 0
1 1 1 1

(ii) Show the states of the five-bit register shown below using waveforms, for the specified data
input and clock signal. Assume the registers to be initially cleared (all 0s). How long will it
take to shift an 8-bit number into a shift register if the clock is set to 10 MHz?
(10 M)
Data QA QB QC QD QE
in D Q D Q D Q D Q D Q Data
A B C D E out
CLK
CLK
1 1
Input 0 1 0
Sol:
(i)
0 D0 D3 1 16 VCC
1 D1
1 D2 2 15 D4
D2
0 D3 D1 3 14 D5
8 1
0 D4 MUX Y
D0 4 IC 74151 13 D6
0 D5
0 D6 Y 5 12 D7
1 D7 S S S Y 6 11 S0
2 1 0
E 7 10 S1
GND 8 9 S2
C B A

(ii)
Data QA QB QC QD QE
in D Q D Q D Q D Q D Q Data
A B C D E out
CLK
CLK
1 1
Input 0 1 0
QA
QB
QC
QD
QE
f = 10 MHz
1
T  0.1s
10 MHz
The number of clock cycles to read 8-bit data 8T and the time is = 8  0.1 s = 0.8 s.

07. (a) Find Vo(t) in the circuit shown in the figure. Assume Vo(0) = 5V. (20 M)
10 
10e-t u(t) 
+ 10  Vo 0.1 F 2(t) A
Sol: For t > 0, 10e t u (t )  10e  t
10
10et +

10 V0 0.1F 2(t)
+
 5V
t – domain
10 V0(s)
10 10
+ 10 2
 S
s 1 5 +
s 
S – domain
By KCL at V0(s)
10 5
V0 ( s )  V0 ( s ) 
V (
s 1  0 s ) s 2
10 10 10
s
1 1 s 1 1
V0 ( s )       2
10 10 10  s  1 2
s  2 1 5
V0 ( s )    
 10  s  1 2

 s  2  2  5( s  1)
V0 ( s )  
 10  ( s  1)2
 s  2  5s  7
V0 ( s )  
 10  2( s  1)
25s  35 25s  25  10
V0 ( s )  
( s  1)( s  2) ( s  1)( s  2)
25 10
V0 ( s )  
( s  2) ( s  1)( s  2)
25 10 10 15 10
Vo (s)     
s  2 s 1 s  2 s  2 s 1
By I.L.T
V0 (t )  15e 2t  10e t Volts t  0
07.(b)(i) In a cathode-ray tube, the electron beam is displaced vertically by a magnetic field of flux
density 210-4 Wb/m2. The length of the magnetic field along the tube axis is same as that of
electrostatic deflection plates. The final anode voltage is 1kV. Determine the voltage which
should be applied to the y-deflection plates 10mm apart to return the spot back to the centre
of the screen. Take
Mass of electron = 9.10710-31 kg and
Charge on electron = 1.610-19 C. (10 M)
(ii) A moving coil milli-ammeter having a resistance of 20  gives full scale deflection when a
current of 10 mA is passed through it. Describe how this instrument can be used for
measurement of current up to 1 A and voltage up to 5V. (10 M)
Sol:
(i) The magnetostatic deflection,
lBL q
D - - - - - (1)
Va 2m

The electrostatic deflection,

lLVd
D - - - - - (2)
2dVa
For returning the beam back to the centre, the electrostatic deflection & the magnetostatic
deflection must be equal from (1) & (2)
lBL q lLVd

Va 2m 2dVa
2Va q
Vd  dB 
m
Here d  10 mm
B  2  10 4 Wb / m 2
Va  1 kV
q  1.6  10 19 C
m  9.107  10 31 kg
2  1000 1.6  10 19

Vd  10 10 3  2  10  4 
9.107  10 31
 2 10 6 351.4 1012

Vd  37.49 V
(ii)
Im M.C 20 
Im = 10mA; Rm = 20 
Vm = Im Rm = 200 mV
(1) By using this basic instrument, we can measure current 1 A by connecting shunt resistance
1A Im = 10mA Rm = 20 
Rsh

Rm 20 20
R sh     0 .2 
 I   1  99
  1   1
 Im   10 mA 
(2)We can measure voltage 5V, by connecting a series resistance.
4 mA Rm = 20  Rse
200 mV
5V
 V   5 
R se  R m   1  20  1  480 
 Vm   200 mV 
07.(c)(i) Draw the oriented graph of a network with fundamental cutset matrix as shown below:
(10 M)
Twigs Links
1 2 3 4 5 6 7
1 0 0 0 1 0 0
0 1 0 0 1 0 1
0 0 1 0 0 1 1
0 0 0 1 0 1 0
(ii) For the network shown in the figure, draw the oriented graph, obtain the cutset matrix and
find the number of links. (10 M)
1  I1 I2
M
4H 0.5H
V  2H
2F
Sol: I3
(i) The fundamental cutset matrix
Twigs Links
1 2 3 4 5 6 7
1 0 0 0 1 0 0 

  0
C  1 0 0 1 0 1
 
0 0 1 0 0 1 1
0 0 0 1 0 1 0   n1b

C   VI t C l  ( n1)b
(n – 1) = 4  n = 5 = number of nodes in the graph

The tree for the given cut set
5 6
1 2 3 4
The oriented graphs
7
5 6
1 2 3 4
(ii)
I1 1  I2
M
4H 0.5H
V  1 2H
2F 2
I3
By KVL for (1)

dI3 dI 1
V  1I1  4  0.5 2   I3dt - - - - (1)
dt dt 2
dI 2 dI 1 dI dI
2  0.5 3   I 3 dt  4 3  0.5 2 - - - - (2)
dt dt 2 dt dt

The circuit can be drawn without dots

I1 1  1 I2
M
4H 0.5H
V  dI 2H
+
 0.5 dt
2
I3 2 + dI
 0.5 3
2F dt
The oriented graph, of the given coupled circuit

1
c b
a 2
d
Cut-set matrix (Q):

For cut-set matrix select any one of the tree form the obtained oriented graph
Number of twigs = N – 1 = 2
1
C1 Number of links = 2
a 2 b
C2
3
Cut-set matrix (Q):
Braches Links Twigs

Cut-set a b c d
[Q] = C1 -1 +1 +1 0
(n-1)b
C2 -1 +1 0 +1 24
[Q] = [[Cl] [Vt]] 24

08.(a)(i) For the network in the figure shown below, determine

I. re
II. Zi
III. Zo
IV AV
Repeat parts II, III and IV with ro = 20k and compare results. (10 M)
9V
RC = 2.7 k
180 k Io
V0
RF
10 F
Ii
Vi  = 200, ro = 
10 F Zo
Zi
(ii) Draw the equivalent circuit (hybrid- high frequency model) of the CB amplifier shown
below. Find an expression for the high-frequency voltage-gain ratio. Also describe the high-
frequency behaviour of this amplifier. (10 M)
VEE +VCC
RE RC
CE CC IL
+
Vs
 Zin

Sol:
(i) DC Analysis +9V
180k 2.7k IC+IB
IC
+
IB 0.7

KVL
9  I C  I B 2.7 k  I B 180k   0.7
9  0.7 9  0.7
IC  
182.7k 182.7k
2.7K  2.7k 
 200
 2.29694 mA

1. re 
gm
IC
where g m 
Vt
2.2969m

26m
 0.08834 A / V 
  
 
   1 

gm

200 / 201
0.08834
 11.263
 200
r  
g m 0.08834
 2.2638k

AC Analysis
180k
2.7k
+
Vin 

Iin Vin 180k V0
+ + +
Vin  Vbe r gmVbe 2.7k V0
  
=gmVin
R0
V0  Vin V
KCL  g m Vin  0  0
180K 2.7K
 1 1   1 
V0     Vin   gm 
180K 2.7K  180K 
 1 
 gm 
V0  180K
2. A V   
Vm  1  1 
 180K 2.7K 
 234.988
 235 V V 
Vin
3. Ri 
I in
Vin Vin  V0
I in  
r 180k
1 1 Av 
Iin  Vin    
 r 180K 180K 
Vin 1

I in 1 1 235
 
r 180k 180k

1

1 1 235
 
2.2638K 180K 180K
 0.57 k  570
(or)
180K  180k
R in  r    2.2638k ||
10Av  236
 0.57 k
Output resistance
R0  R0  R0
Vin  0 Vbe  0 g m v be  0
 2 .7 k 
With r0  20k
Vin 180k V0
+
 Vin r r0

R0
1
 gm
V
2. A V  0  180k
Vm 1 1 1
 
180k 2.7 k 20k
 2.347 k  0.08833
 207.33
180K 180K
3. R in  r  2.2638K
1  AV 1  207.3
 2.2638k || 0.864k
 625.33

3. R 0  r0 R C  20k 2.7 k  2.37 k
+
 Vin r ro Rc
 R0
gmvin
(ii) AC equivalent
IL
V0
RC RL
+
Vs  RE

HF model of BJT
C
C
+
V gmV r0 C
C 
C
RC//RL
C
RE
VS=0

1 1
Input pole  p1   
T2 C  Re q 
1
 
0
1 1
Out put pole  p2   
T2 C  RC || R L  ro
r0 C RC//RL
1
Bandwidth  3db  
1 1

p1 p2
1

1
 p1
3db  p1
Neglect early effect r0  
B C
+
V gmV RC//RL

E
+
 VS

KVL
V  Vs  0  Vs  V
V0  g m V R C || R L 
 g m  Vs R C || R L 
V0
 g m R C || R L 
Vs

Frequency response
A0  gm  RC / / RL 
A0
2
0 3db ω
10 1.5 
08. (b) Find (z) and (g) of a two-port network if [T] =  (20 M)
2s 4 
Sol: Two - port network ABCD parameters
A B 10 1.5 
C D   T    25 (given)
   4 
For ABCD parameters
V1  10V2  1.5 I 2 
 ……… (1)
I1  2V2  4 I 2 
For Z – parameters V1 = z11I1 + z12I2

V2 = z21I1 + z22I2
From (1)
I1 = 2V2 – 4I2
V2 
 I1  4 I 2   0.5I  2I2
1
2
V1  10  0.5 I1  2 I 2   1.5 I 2
V1  5I1  18.5I 2
V2  0.5I1  2 I 2
Z – parameter matrix
 z11 z12   5 18.5
z 
 21 z22   0.5 2 

In g – parameters
I1 = g11V1 + g12I2
V2 = g21V1 + g22I2
From (1)
I1 = 2V2  4I2
 V2

 V1  1.5 I 2 
I1  2    4I2
 10 
 
I1 = 0.2V1 – 3.7I2
V2 = 0.1V1 + 0.15 I2
g – parameters
 g 11 g  0.2  3.7 
g 
g 22   0.1 0.15 
12
 21 
08. (c) For the circuit shown below, identify the logic function performed by it. Also determine the
high level fan-out, if RP (pull-up resistor) = 10 k. Compute the maximum value of RP for a
fan-out of 5. Assume that input diode has a leakage current of 100 A.
Given: VT = 0.7 V, VD (forward voltage drop) = 0.8 V, VBE(cut-in) = 0.5 V, VCE(sat) = 0.2 V.
Transistor leakage current is negligible. (20 M)
+5V
10k
IiH 20k RP
D1
P2 IOH
A
D4
D2
B T1
P1 T2
D3
C D5 10k

Sol: +5V
(i) 10k
20k
10k
IiH 20k RP
D1 D4
P2 IOH
A
D4
D2 Vp1
B T1
P1 T2 10k
D3
C D5 10k
Given Rp = 10k
I OH
Fan out 
I IH
Let A = B = C = 1  Vo = 1 and VP  0.7  0.8  1.5V
VCC  VP1 5  1.5
Thus, I OH    3.5  10 4  350 A
RP 10 k
and I IH  100 µA
I OH 350
So Fanout = I OH    3 .5
I IH 100
i.e., Fanout = 3
(ii) Find Rp if Fanout is 5

I OH I OH
Fanout  5 6
 I OH  500 10  6
I IH 100  10
5  (0.8  0.5)
 500
RP
5  1.3
RP   7.4kΩ
500  10 6
R P  7.4k
(iii) It is an AND gate

If any one input is 0  then Vo = 0
If all inputs are 1  then Vo = 1

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ELECTRONICS & TELECOMMUNICATION ENGINEERING

SUBJECT WISE WEIGHTAGE

S.No NAME OF THE SUBJECT Marks

01 Basic Electrical Engineering 40

02 Basic Electronics Engineering 60

04 Electronic Measurements & Instrumentation 60

05 Network Theory 128

(i) Given power supply V   10  Vm sin t  10  1sin 260 

Given VD  0.7 V when I D  1mA

Equation of line (0,I1) (–I1R,0)

Operation (1) If Vin  3V, the transistor is ON.

01. (c) A 40 F capacitance is charged to store 0.2J of energy. An uncharged, 60 F capacitance is

104  v12  v1  100 volts

It is connected in parallel with 60F uncharged capacitor

Capacitor combination voltage vC 40F

Sol: Given data:

Sol: By STT (source transformation technique)

By STT (2.5+j1.26) j13

Sol: Current in RL by using Thevenin equation

For Rth (V  S.C, I  0 – C)

Thevenin’s equivalent circuit across RL

Taken ni = 1.51010 cm-3

ni2 (1.5  1010 ) 2

ni2 (1.5  1010 ) 2

For minority carriers

LP  DP P  11.66  10  10 4  1.08  10 2 cm

Ln  Dn n  18.13  0.1  10 6  1.35  10 3 cm

ii) Reverse current at a reverse bias of -O.S.V

Sol: Primary photocurrent (Ip)

(0.9)  (1.6  10 19 C )  (1.3  10 6 m)

i) Mean square shot noise current (i2shot):

ii) Mean-square dark current (i2DB):

iii) Mean square thermal noise current (i2T):

4(1.38 1023 J / K )(293K )

Sol: Given Data:

25.37 0.428 1.495 1.09 3(1.09) 111 1.48

4.16 0.409 1.365 1 3(1.00) 111 1.48

Sol: (i) Equivalent circuit Analysis:

R1 : Resistance of the stator winding/ph

R2: Rotor resistance/ph

Exact equivalent circuit of the induction motor

This expression can be modified as follows (diving numerator and denominator by S)

Equivalent circuit of the induction motor referred to stator side

(ii) Given data:

 Stator O/P = Rotor I/P = Motor I/P – stator losses

 Net Rotor O/P = 44.18 kW – Rotor mechanical loss

Fig (a): circuit for determining the DC operating point

VGS = VDS = VDD – IDRD

R1L = RL ||RD|| ro = 10 || 10 || 47 = 4.52 K

Voltage gain (Av): AV ≃ gm R1L

Largest allowable input signal (V̂i ) :

VDS  | A V | V̂i  VGS  V̂i  Vt

since VDS = VGS, we obtain

Types of Nano Materials:

2. Quantum Dot: (Three dimensional nanomaterial) (Zero dimensional material)

* Reduction of size of bulk material upto the nanorange in all directions.

3. Quantum Wire: (Two dimensional nanomaterial) (One dimensional material)