General Purpose Transistor (PNP) COMCHIP

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MMBT3906
PNP Silicon Type

Features
Epitaxial Planar Die Construction
Complementary NPN Type Available SOT-23
(MMBT3904)
.119 (3.0)
Ideal for Medium Power Amplification and .110 (2.8)
Switching .020 (0.5)
Top View
3

.047 (1.20)
.056 (1.40)
1 2

.006 (0.15)max.
COLLECTOR
3 .037(0.95) .037(0.95)

.006 (0.15)
.002 (0.05)

.044 (1.10)
.035 (0.90)
1
BASE

2 .103 (2.6)
.020 (0.5) .020 (0.5) .086 (2.2)
EMITTER

Dimensions in inches (millimeters)

MAXIMUM RATINGS
Rating Symbol Value Unit
Collector – Emitter Voltage VCEO –40 Vdc
Collector – Base Voltage VCBO –40 Vdc
Emitter – Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC –200 mAdc

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board(1) PD 225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance Junction to Ambient RqJA 556 °C/W
Total Device Dissipation PD 300 mW
Alumina Substrate,(2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance Junction to Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg – 55 to +150 °C

MDS0306002A Page 1
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

OFF CHARACTERISTICS Symbol Min Max Unit

Collector – Emitter Breakdown Voltage(3) V(BR)CEO Vdc

(IC = –1.0 mAdc, IB = 0) –40 —
Collector – Base Breakdown Voltage V(BR)CBO Vdc
(IC = –10 mAdc, IE = 0) –40 —
Emitter – Base Breakdown Voltage V(BR)EBO Vdc
(IE = –10 mAdc, IC = 0) –5.0 —
Base Cutoff Current IBL nAdc
(VCE = –30 Vdc, VEB = –3.0 Vdc) — –50
Collector Cutoff Current ICEX nAdc
(VCE = –30 Vdc, VEB = –3.0 Vdc) — –50

1. FR– 5 = 1.0  
0.75 0.062 in. REM : Thermal Clad is a trademark of the Bergquist Company.
 
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

ON CHARACTERISTICS(3) Symbol Min Max Unit
DC Current Gain HFE —
(IC = –0.1 mAdc, VCE = –1.0 Vdc) 60 —
(IC = –1.0 mAdc, VCE = –1.0 Vdc) 80 —
(IC = –10 mAdc, VCE = –1.0 Vdc) 100 300
(IC = –50 mAdc, VCE = –1.0 Vdc) 60 —
(IC = –100 mAdc, VCE = –1.0 Vdc) 30 —
Collector – Emitter Saturation Voltage VCE(sat) Vdc
(IC = –10 mAdc, IB = –1.0 mAdc) — –0.25
(IC = –50 mAdc, IB = –5.0 mAdc) — –0.4
Base – Emitter Saturation Voltage VBE(sat) Vdc
(IC = –10 mAdc, IB = –1.0 mAdc) –0.65 –0.85
(IC = –50 mAdc, IB = –5.0 mAdc) — –0.95

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product fT MHz
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) 250 —
Output Capacitance Cobo pF
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) — 4.5
Input Capacitance Cibo pF
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) — 10
Input Impedance hie kΩ
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) 2.0 12
Voltage Feedback Ratio hre X 10– 4
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) 0.1 10
Small – Signal Current Gain hfe —
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) 100 400
Output Admittance hoe mmhos
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) 3.0 60
Noise Figure NF dB
(IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) — 4.0

SWITCHING CHARACTERISTICS
Delay Time (VCC = –3.0 Vdc, VBE = 0.5 Vdc, td — 35
ns
Rise Time IC = –10 mAdc, IB1 = –1.0 mAdc) tr — 35
Storage Time (VCC = –3.0 Vdc, IC = –10 mAdc, ts — 225
ns
Fall Time IB1 = IB2 = –1.0 mAdc) tf — 75

3.Pulse Test: Pulse Width ı 300 ıs, Duty Cycle ı 2.0%.

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Rating and Characteristic Curves (MMBT3906)

3V 3V
+9.1 V < 1 ns

275 275
< 1 ns
+0.5 V 10 k 10 k
0
CS < 4 pF* 1N916 CS < 4 pF*
10.6 V
300 ns 10 < t1 < 500 ms
Duty Cycle = 2% t1 10.9 V
Duty Cycle = 2%

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
5.0 Cobo
Capacitance (pF)

1000
Q, Charge (pC)

700
Cibo
3.0 500

300
2.0 200 QT
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Reverse Bias (V) I C, Collector Current (mA)

Figure 3. Capacitance Figure 4. Charge Data

500 500
IC/IB = 10 VCC = 40 V
300 300
IB1 = IB2
200 200
IC/IB = 20
100 100
t f , Fall Time (ns)

70 70
tr @ VCC = 3.0 V
Time (ns)

50 50

30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I C, Collector Current (mA) I C, Collector Current (mA)

Figure 5. Turn – On Time Figure 6. Fall Time

MDS0306002A Page 3
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Rating and Characteristic Curves (MMBT3906)

TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

5.0 12
SOURCE RESISTANCE = 200 W f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA
10
4.0
SOURCE RESISTANCE = 200 W IC = 0.5 mA
NF, Noise Figure (dB)

NF, Noise Figure (dB)

IC = 0.5 mA 8
3.0
SOURCE RESISTANCE = 2.0 k
m
IC = 50 A 6
2.0
4 IC = 50 mA

1.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA

IC = 100 A m 2

0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, Frequency (kHz) R g, Source Resistance (k OHMS)

Figure 7. Figure 8.
h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100

70
h oe, Output Admittance ( mmhos)

50
200
h fe , DC Current Gain

30

100 20

70
10
50
7

30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I C, Collector Current (mA) I C, Collector Current (mA)

Figure 9. Current Gain Figure 10. Output Admittance

20 10
h re , Voltage Feedback Ratio (X 10 –4 )

10 7.0
h ie , Input Impedance (k OHMS)

7.0 5.0
5.0

3.0 3.0

2.0 2.0

1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I C, Collector Current (mA) I C, Collector Current (mA)

Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio

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Rating and Characteristic Curves (MMBT3906)

TYPICAL STATIC CHARACTERISTICS

2.0
TJ = +125°C VCE = 1.0 V
h FE, DC Current Gain (Normalized)

1.0 +25°C

0.7
– 55°C
0.5

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I C, Collector Current (mA)

Figure 13. DC Current Gain

1.0
TJ = 25°C
VCE , Collector Emitter Voltage (V)

0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I B, Base Current (mA)

Figure 14. Collector Saturation Region

1.0 1.0
TJ = 25°C VBE(sat) @ IC/IB = 10
q V, Temperature Coefficients (mV/°C)

0.5 +25°C TO +125°C

0.8 qVC FOR VCE(sat)
VBE @ VCE = 1.0 V
0
– 55°C TO +25°C
V, Voltage (V)

0.6
– 0.5
0.4 +25°C TO +125°C
– 1.0
VCE(sat) @ IC/IB = 10 – 55°C TO +25°C
0.2 qVB FOR VBE(sat)
– 1.5

0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
I C, Collector Current (mA) I C, Collector Current (mA)

Figure 15. “ON” Voltages Figure 16. Temperature Coefficients

MDS0306002A Page 5
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