BUP 314D

IGBT With Antiparallel Diode

Preliminary data

• Low forward voltage drop

• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 1 Pin 2 Pin 3
G C E

Type VCE IC Package Ordering Code

BUP 314D 1200V 42A TO-218 AB Q67040-A4226-A2

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage VCGR
RGE = 20 kΩ 1200
Gate-emitter voltage VGE ± 20
DC collector current, (limited by bond wire) IC A
TC = 60 °C 42
TC = 90 °C 33
Pulsed collector current, tp = 1 ms ICpuls
TC = 25 °C 84
TC = 90 °C 66
Diode forward current IF
TC = 90 °C 28
Pulsed diode current, tp = 1 ms IFpuls
TC = 25 °C 168
Power dissipation Ptot W
TC = 25 °C 300
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150

Semiconductor Group 1 Jul-30-1996

 BUP 314D

Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance
Thermal resistance, chip case RthJC ≤ 0.42 K/W
Diode thermal resistance, chip case RthJCD ≤ 0.83

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Gate threshold voltage VGE(th) V
VGE = VCE, IC = 0.35 mA 4.5 5.5 6.5
Collector-emitter saturation voltage VCE(sat)
VGE = 15 V, IC = 25 A, Tj = 25 °C - 2.7 3.2
VGE = 15 V, IC = 25 A, Tj = 125 °C - 3.3 3.9
VGE = 15 V, IC = 42 A, Tj = 25 °C - 3.4 -
VGE = 15 V, IC = 42 A, Tj = 125 °C - 4.3 -
Zero gate voltage collector current ICES mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C - - 0.8
Gate-emitter leakage current IGES nA
VGE = 25 V, VCE = 0 V - - 100

AC Characteristics
Transconductance gfs S
VCE = 20 V, IC = 25 A 8.5 20 -
Input capacitance Ciss pF
VCE = 25 V, VGE = 0 V, f = 1 MHz - 1650 2200
Output capacitance Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 250 380
Reverse transfer capacitance Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 110 160

Semiconductor Group 2 Jul-30-1996

 BUP 314D

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time td(on) ns
VCC = 600 V, VGE = 15 V, IC = 25 A
RGon = 47 Ω - 75 110
Rise time tr
VCC = 600 V, VGE = 15 V, IC = 25 A
RGon = 47 Ω - 65 100
Turn-off delay time td(off)
VCC = 600 V, VGE = -15 V, IC = 25 A
RGoff = 47 Ω - 420 560
Fall time tf
VCC = 600 V, VGE = -15 V, IC = 25 A
RGoff = 47 Ω - 45 60

Free-Wheel Diode
Diode forward voltage VF V
IF = 25 A, VGE = 0 V, Tj = 25 °C - 2.2 2.8
IF = 25 A, VGE = 0 V, Tj = 125 °C - 1.7 -
Reverse recovery time trr ns
IF = 25 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C - - -
Tj = 125 °C - 130 180
Reverse recovery charge Qrr µC
IF = 25 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C - 2.3 4.3
Tj = 125 °C - 6 11

Semiconductor Group 3 Jul-30-1996

 BUP 314D

Power dissipation Collector current

Ptot = ƒ(TC) IC = ƒ(TC)
parameter: Tj ≤ 150 °C parameter: VGE ≥ 15 V , Tj ≤ 150 °C

320 55

A
W
45
Ptot IC
240
40

200 35

30
160
25

120 20

15
80

10
40
5
0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance IGBT

IC = ƒ(VCE) Zth JC = ƒ(tp)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C parameter: D = tp / T

10 3 10 0

A
K/W
IC tp = 4.1µs ZthJC
10 2
10 µs
10 -1

100 µs

10 1
D = 0.50
1 ms
0.20
10 -2 0.10
10 ms 0.05
10 0
0.02
0.01
single pulse
DC

10 -1 10 -3
0 1 2 3 -5 -4 -3 -2 -1 0
10 10 10 10 V 10 10 10 10 10 s 10
VCE tp

Semiconductor Group 4 Jul-30-1996

 BUP 314D

Typ. output characteristics Typ. output characteristics

IC = f (VCE) IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C

50 50

A A
17V 17V
40 15V 40 15V
IC 13V IC 13V
11V 11V
35 9V 35 9V
7V 7V
30 30

25 25

20 20

15 15

10 10

5 5

0 0
0 1 2 3 V 5 0 1 2 3 V 5
VCE VCE

Typ. transfer characteristics

IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V

50

IC 40

35

30

25

20

15

10

0
0 2 4 6 8 10 V 14
VGE

Semiconductor Group 5 Jul-30-1996

 BUP 314D

Typ. switching time Typ. switching time

I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 25 A

10 3 10 3 tdoff

tdoff t
t ns
ns

tdon

tr
10 2 tdon 10 2

tr

tf tf

10 1 10 1
0 10 20 30 40 A 60 0 20 40 60 80 100 120 140 Ω 180
IC RG

Typ. switching losses Typ. switching losses

E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 25 A

10 Eon
10

mWs mWs

E 8 8
E

7 7
Eon
6 6

5 5
Eoff
4 4

3 Eoff
3

2 2

1 1
0 0
0 10 20 30 40 A 60
IC
0 20 40 60 80 100 120 140 Ω 180
RG

Semiconductor Group 6 Jul-30-1996

 BUP 314D

Typ. gate charge Typ. capacitances

VGE = ƒ(QGate) C = f (VCE)
parameter: IC puls = 25 A parameter: VGE = 0 V, f = 1 MHz

20 10 1

V
nF
VGE 16 C
Ciss
14 600 V 800 V
10 0

12

10
Coss
8
10 -1 Crss
6

0 10 -2
0 20 40 60 80 100 120 140 nC 170 0 5 10 15 20 25 30 V 40
QGate VCE

Short circuit safe operating area Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150°C ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH parameter: VGE = 15 V

10 2.5

ICsc/IC(90°C) ICpuls/IC

6 1.5

4 1.0

2 0.5

0 0.0
0 200 400 600 800 1000 1200 V 1600 0 200 400 600 800 1000 1200 V 1600
VCE VCE

Semiconductor Group 7 Jul-30-1996

 BUP 314D

Typ. forward characteristics Transient thermal impedance Diode

IF = f (VF) Zth JC = ƒ(tp)
parameter: Tj parameter: D = tp / T

50 10 0

A K/W

IF 40 ZthJC
10 -1
35

30
Tj=125°C Tj=25°C
25 10 -2
D = 0.50

20 0.20
0.10
15 0.05
10 -3
single pulse
0.02
10
0.01
5

0 10 -4
-5 -4 -3 -2 -1 0
0.0 0.5 1.0 1.5 2.0 V 3.0 10 10 10 10 10 s 10
VF tp

Semiconductor Group 8 Jul-30-1996

 BUP 314D

Package Outlines
Dimensions in mm
Weight:

Semiconductor Group 9 Jul-30-1996