Carrier Modeling

Reading Assignment : R.F. Pierret Chap 2

Instructor : Dr.Eng. Arief Udhiarto

Source : U.C. Berkeley
The quantization concept
 Bohr Model

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 Semiconductor Models

• Bonding Model
• Energy Band Model
 Bonding Model

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 Bonding Model

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Bond Model of Electrons and Holes

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 Energy band Model

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 Conduction Band and Valence Band

Electron
Potential
Energy

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The Simplified Energy Band Diagram

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Carriers

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 Semiconductors, Insulators, and
Conductors

• Totally filled band and totally empty bands do not allow

current flow. (just as there is no motion of liquid in a
totally filled or totally empty bottle
• Metal conduction band is half-filled
• Semiconductors have lower Eg’s than insulators and
can be doped

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Carrier Properties
 Electron as Moving Particle

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 Semiconductor Carriers Effective Mass

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 Electrons and Holes

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 Carrier Concentrations of Pure
(“intrinsic”) Semiconductor
 For each electron in the
conduction band (i.e. an
occupied state in CB),
there must be a hole in
the valence band (i.e.
unoccupied state in VB)
Therefore n= p which can
defined as an intrinsic
concentration ni

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Intrinsic Carrier Concentration
versus Temperature

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Manipulation of Carrier
Numbers - Doping
 Doping
 By substituting a Si atom with a special impurity atom
(Column V or Column III element), a conduction electron
or hole is created.

Dopant concentrations typically range from 1014 cm-3 to 1020 cm-3

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Energy Band Description of Electrons and Holes
Contributed by Donors and Acceptors

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 N-type (Arsenic) Doped Silicon
and Its Donor Energy Band

Conducting band, Ec
Si Si Si
Extra
Ed ~ 0.05 eV
Electron
Si As Si Eg = 1.1 eV

Si Si - Si
Valence band, Ev

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 P-type (Boron) Doped Silicon
and Its Acceptor Energy Band

Conducting band,
Si Ec
Si Si
Hole
Eg = 1.1 eV
Si B Si

Ea ~ 0.05 eV
Si Si - Si
Valence band, Ev
Electron

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 State and Carrier
Distributions

• Density of States
• The Fermi Function
 Density of States

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Density of States at Conduction Band:
The Greek Theater Analogy

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 The Fermi-Dirac Distribution
(Fermi Function)
Probability of available states at energy E being occupied f(E) =
1/ [1+ exp (E- Ef) /kT]
where Ef is the Fermi energy and k = Boltzmann constant=8.617
.10-5 eV/K

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 Properties of the Fermi-Dirac
Distribution
(1) f(E) .exp [- (E- Ef) /kT] for (E- Ef) >3kT
This approximation is called Boltzmann approximation

(2) Probability of available states at energy E NOT being occupied

1- f(E) = 1/ [1+ exp (Ef -E) /kT]

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Equilibrium Carrier
Concentrations
 Formula for n and p

 Integrate n(E) over all the energies in the

conduction band to obtain

 By using Boltzmann approximation, and extending

the integration limit to ~, we obtain

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 Integrate p(E) over all energies in the valance
band to optain p

 By using Boltzmann approximation, and

extending the integration limit to ~, we obtain

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Fermi Energy (Ei) of Intrinsic
Semiconductor

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 Physical Interpretation of NC and NV

The average electron energy <E> of all electrons in conduction band is only 1.5kT above Ec !
We can treat all the available density of states in the conductor band as a single energy level exactly
at EC, with an effective density of states of NC.
The electron concentration can simply be calculated as NC * f(E=EC).

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Charge Neutrality Condition

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 Charge-Carrier Concentrations
n : electron concentration (cm-3)
p : hole concentration (cm-3)
N+D : ionized donor concentration (cm-3) ≡ND
N-A : ionized acceptor concentration (cm-3) ≡ NA

(1) Charge neutrality condition:ND +p =NA +n

(2) At thermal equilibrium, np =ni2 (“Law of Mass
Action”)

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n-type and p-type Semiconductors

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The Fermi Energy Ef for doped
semiconductors can be determined from
either one of the following relationships
once n and p are known

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Dependence of Fermi Level with Doping
Concentration

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 Carrier Concentration vs Temperature

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