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SPP52N05: Buz 102 S
SPP52N05: Buz 102 S
SPP52N05
• N channel
• Enhancement mode
• Avalanche-rated
• dv /dt rated
• 175°C operating temperature
• also in SMD available
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 25 °C 52
TC = 100 °C 37
Pulsed drain current IDpuls
TC = 25 °C 208
Avalanche energy, single pulse E AS mJ
ID = 52 A, V DD = 25 V, RGS = 25 Ω
L = 181 µH, Tj = 25 °C 245
Avalanche current,limited by Tjmax IAR 52 A
Avalanche energy,periodic limited by Tjmax E AR 12 mJ
Reverse diode dv/dt dv/dt kV/µs
IS = 52 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C 6
Gate source voltage V GS ± 20 V
Power dissipation P tot W
TC = 25 °C 120
Maximum Ratings
Parameter Symbol Values Unit
Operating temperature Tj -55 ... + 175 °C
Storage temperature Tstg -55 ... + 175
Thermal resistance, junction - case RthJC ≤ 1.25 K/W
Thermal resistance, junction - ambient RthJA ≤ 62
IEC climatic category, DIN IEC 68-1 55 / 175 / 56
Static Characteristics
Drain- source breakdown voltage V (BR)DSS V
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C 55 - -
Gate threshold voltage V GS(th)
V GS=V DS, ID = 90 µA 2.1 3 4
Zero gate voltage drain current IDSS µA
V DS = 50 V, V GS = 0 V, Tj = -40 °C - - 0.1
V DS = 50 V, V GS = 0 V, Tj = 25 °C - 0.1 1
V DS = 50 V, V GS = 0 V, Tj = 150 °C - - 100
Gate-source leakage current IGSS nA
V GS = 20 V, VDS = 0 V - 10 100
Drain-Source on-resistance RDS(on) Ω
V GS = 10 V, ID = 37 A - 0.016 0.023
Dynamic Characteristics
Transconductance gfs S
V DS≥ 2 * ID * RDS(on)max, ID = 37 A 10 - -
Input capacitance Ciss pF
V GS = 0 V, V DS = 25 V, f = 1 MHz - 1220 1525
Output capacitance Coss
V GS = 0 V, V DS = 25 V, f = 1 MHz - 410 515
Reverse transfer capacitance Crss
V GS = 0 V, V DS = 25 V, f = 1 MHz - 210 265
Turn-on delay time td(on) ns
V DD = 30 V, VGS = 10 V, ID = 52 A
RG = 6.8 Ω - 12 18
Rise time tr
V DD = 30 V, VGS = 10 V, ID = 52 A
RG = 6.8 Ω - 22 33
Turn-off delay time td(off)
V DD = 30 V, VGS = 10 V, ID = 52 A
RG = 6.8 Ω - 30 45
Fall time tf
V DD = 30 V, VGS = 10 V, ID = 52 A
RG = 6.8 Ω - 25 40
Gate charge at threshold Qg(th) nC
V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V - 1.5 2.8
Gate charge at 7.0 V Qg(7)
V DD = 40 V, ID = 52 A, VGS =0 to 7 V - 35 55
Gate charge total Qg(total)
V DD = 40 V, ID = 52 A, VGS =0 to 10 V - 45 70
Gate plateau voltage V (plateau) V
V DD = 40 V, ID = 52 A - 5.9 -
Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 °C - - 52
Inverse diode direct current,pulsed ISM
TC = 25 °C - - 208
Inverse diode forward voltage V SD V
V GS = 0 V, IF = 104 A - 1.2 1.7
Reverse recovery time trr ns
V R = 30 V, IF=lS, diF/dt = 100 A/µs - 70 105
Reverse recovery charge Qrr µC
V R = 30 V, IF=lS, diF/dt = 100 A/µs - 0.15 0.25
130 55
W
A
110
45
Ptot ID
100
40
90
35
80
70 30
60 25
50
20
40
15
30
10
20
10 5
0 0
0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 °C 180
TC TC
10 3 10 1
K/W
A 10 0
t = 19.0µs
p
ID ZthJC
D
/I
DS
V
10 2 10 -1
=
n)
(o
DS
R
100 µs
10 -2
D = 0.50
0.20
10 1 10 -3 0.10
1 ms
0.05
10 ms single pulse 0.02
10 -4 0.01
DC
10 0 10 -5
0 1 2 -7 -6 -5 -4 -3 -2 -1 0
10 10 V 10 10 10 10 10 10 10 10 s 10
VDS tp
120 0.070
Ptot = 120W l a b c d e f g
A k j i
Ω
V [V] 0.060
100 h GS
ID a 4.0 RDS (on)
0.055
90 b 4.5
g c 5.0 0.050
80 d 5.5 0.045
e 6.0
70 f 0.040
f 6.5
60 g 7.0 0.035
e h 7.5
50 0.030
i 8.0
j 9.0 0.025 h
40 d
k 10.0 i
0.020 j
30 l 20.0
c 0.015 k
20
0.010 V [V] =
b GS
10 a b c d e f g h i j k
0.005 4.0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
a
0 0.000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0 20 40 60 80 A 110
VDS ID
120
A
I
D
80
60
40
20
0
0 1 2 3 4 5 6 7 8 V 10
VGS
0.075 5.0
Ω V
0.065 4.4
0.060
RDS (on) VGS(th) 4.0
0.055
3.6
0.050
3.2
0.045
2.8
0.040
0.035 2.4 max
98%
0.030 2.0
0.025 typ 1.6
0.020 typ
1.2
0.015
0.8
0.010
min
0.005 0.4
0.000 0.0
-60 -20 20 60 100 °C 180 -60 -20 20 60 100 140 V 200
Tj Tj
10 4 10 3
A
C IF
pF
10 2
Ciss
10 3
10 1
C Tj = 25 °C typ
oss
Tj = 175 °C typ
Tj = 25 °C (98%)
Crss
Tj = 175 °C (98%)
10 2 10 0
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD
260 16
mJ
V
220
EAS VGS
200
12
180
160 10
0,2 VDS max 0,8 VDS max
140
8
120
100 6
80
4
60
40
2
20
0 0
20 40 60 80 100 120 140 °C 180 0 10 20 30 40 50 nC 65
Tj Q Gate
65
V(BR)DSS
61
59
57
55
53
51
49
-60 -20 20 60 100 °C 180
Tj