Tssini-Conducto'I Zpioducti, Line.: VDG Gs Ig PD

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tJ

tSsini-Conducto'i ZPioducti, Line.


20 STERN AVE. TELEPHONE: (973) 376-2922
SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.S.A. FAX: (973) 376-8960

2N3458
2N3459
2N3460

N-CHANNEL JUNCTION
FIELD EFFECT TRANSISTOR

JEDECTO-18CASE

2IM3458, 2N3459, 2N3460 types are silicon N-Channel Junction Field Effect
Transistors designed for low frequency, low noise amplifier applications.

MAXIMUM RATINGS (TA = 25°C)


SYMBOL UNITS
Drain-Gate Voltage VDG 50 V
Gate-Source Voltage VGS 50 V
Gate Current IG 10 mA
Power Dissipation PD 300 mW
Storage Temperature Tstg -65 to +175 °C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

2N3458 2N3459 2N3460


SYMBOL TEST CONDITIONS M|N MAX MIN MAX MIN MAX UNITS
"GSS VGS = sov 0.25 0.25 0.25 nA
IDSS VDS - 2ov 3.0 15 0.8 4.0 0.2 1.0 mA
BVGSS 50 50 50 V
VGS(OFR
vDS = 2ov, 7.8 3.4 1.8 V
Ivfsl VDS = 2ov, f = 1.0kHz 2500 10000 1500 6000 800 4500 umhos
IVosI VDS = 3ov, f = 1.0kHz 35 20 5.0 umnos
ciss VDS = iov 18 18 18 PF
5.0 5.0 5.0 pF
NF 1 0V, f = 20Hz- RG =1 -OMn 6.0 4.0 4.0 dB

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
.209(5.31 )
* . 230 (.5 . 84)
. 178(4.52)
. 195(4.95) ——~

.170(4.32)
.210( 5.33)
i
1

.030( 0.78) |
MAXIMUM

. 500 ( 2.70)
1
es (mm). M I N I MUM

3 LEADS
.016(0.41)
. 0 19(0.48) """
i
JU
.100(2.54)

LEAD f 2

LEAD * 1

LEAD * 3

038(0.91 .028(0 .71)


046( 1 . 1 7 ) .048( 1 .22)

LEAD CODE:

1) SOURCE
2) DRAIN
3) GATE

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