APT5020BVFR

500V 26A 0.200Ω

POWER MOS V ® FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247

mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode • 100% Avalanche Tested D

FREDFET

• Lower Leakage • Popular TO-247 Package

G
• Faster Switching
S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT5020BVFR UNIT

VDSS Drain-Source Voltage 500 Volts
ID Continuous Drain Current @ TC = 25°C 26
Amps
IDM 1
Pulsed Drain Current 104
VGS Gate-Source Voltage Continuous ±30
Volts
VGSM Gate-Source Voltage Transient ±40
Total Power Dissipation @ TC = 25°C 300 Watts
PD
Linear Derating Factor 2.4 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR 1
Avalanche Current (Repetitive and Non-Repetitive) 26 Amps
EAR 1 30
Repetitive Avalanche Energy
mJ
EAS Single Pulse Avalanche Energy 4
1300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 Volts
ID(on) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Amps
26
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) 0.20 Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250
IDSS µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 4 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5527 Rev C

APT Website - http://www.advancedpower.com

USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
 DYNAMIC CHARACTERISTICS APT5020BVFR
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Ciss Input Capacitance VGS = 0V 3700 4440
Coss Output Capacitance VDS = 25V 510 715 pF
Crss Reverse Transfer Capacitance f = 1 MHz 200 300
Qg Total Gate Charge 3 VGS = 10V 150 225
Qgs Gate-Source Charge VDD = 0.5 VDSS 25 37 nC
Qgd Gate-Drain ("Miller") Charge ID = ID [Cont.] @ 25°C 70 105
t d(on) Turn-on Delay Time VGS = 15V 12 25
tr Rise Time VDD = 0.5 VDSS 10 20
ns
t d(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 50 75
tf Fall Time RG = 1.8Ω 8 15

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode) 26
Amps
ISM Pulsed Source Current 1 (Body Diode) 104
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts
dv/ Peak Diode Recovery dv/ 5 5 V/ns
dt dt
Reverse Recovery Time Tj = 25°C 250
t rr ns
(IS = -ID [Cont.], di/dt = 100A/µs) Tj = 125°C 500
Reverse Recovery Charge Tj = 25°C 1.3
Q rr µC
(IS = -ID [Cont.], di/dt = 100A/µs) Tj = 125°C 4.5
Peak Recovery Current Tj = 25°C 12
IRRM Amps
(IS = -ID [Cont.], di/dt = 100A/µs) Tj = 125°C 18

THERMAL CHARACTERISTICS
Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case 0.42
°C/W
RθJA Junction to Ambient 40
1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471
temperature. 4 Starting T = +25°C, L = 3.85mH, R = 25Ω, Peak I = 26A
j G L
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 5 I ≤ -I [Cont.], di/ = 100A/µs, V
S D dt DD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω,
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.

0.5

D=0.5
Z JC, THERMAL IMPEDANCE (°C/W)

0.1 0.2

0.05 0.1

0.05

Note:
0.02
0.01
PDM

0.01 t1

0.005 SINGLE PULSE t2

Duty Factor D = t1/t2

050-5527 Rev C

Peak TJ = PDM x ZθJC + TC

0.001
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
 APT5020BVFR
50 50
VGS=6V, 7V, 10V & 15V VGS=15V

ID, DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

6V
40 40
VGS=7V & 10V
5.5V 5.5V
30 30

20 5V 20 5V

10 10
4.5V 4.5V

4V 4V
0 0
0 50 100 150 200 250 0 2 4 6 8 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

50 1.8
TJ = -55°C NORMALIZED TO
V = 10V @ 0.5 I [Cont.]
GS D
ID, DRAIN CURRENT (AMPERES)

VDS> ID (ON) x RDS (ON)MAX. TJ = +125°C

40 250µSEC. PULSE TEST 1.6
@ <0.5 % DUTY CYCLE

30 1.4
VGS=10V

20 1.2
VGS=20V

TJ = +125°C
10 1.0
TJ = +25°C TJ = -55°C

0 0.8
0 2 4 6 8 0 20 40 60 80
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
30 1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
ID, DRAIN CURRENT (AMPERES)

25
1.10
VOLTAGE (NORMALIZED)

20
1.05

15
1.00
10

0.95
5

0 0.90
50 75 100 125 150 25 -50
-25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

2.5 1.2
I = 0.5 I [Cont.]
D D
V = 10V
VGS(TH), THRESHOLD VOLTAGE

GS
1.1
2.0

1.0
(NORMALIZED)

(NORMALIZED)

1.5

0.9

1.0
0.8

0.5
0.7
050-5527 Rev C

0.0 0.6
-50-25 0 25 50 75 100 125 150 -50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
 APT5020BVFR
200 20,000
100 10µS
10,000
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
50 LIMITED BY RDS (ON) 100µS
Ciss

C, CAPACITANCE (pF)
5,000

10 1mS

5
Coss
10mS 1,000

1 100mS 500 Crss

TC =+25°C DC
.5 TJ =+150°C
SINGLE PULSE

.1 100
1 5 10 50 100 500 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20 200

IDR, REVERSE DRAIN CURRENT (AMPERES)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = I [Cont.]
D D

VDS=100V 100
16 TJ =+150°C TJ =+25°C
VDS=250V 50

12
VDS=400V

10
8

5
4

0 1
50 100 0
150 200 250 300 0 0.4 0.8 1.2 1.6 2.0
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-247 Package Outline

4.69 (.185)
5.31 (.209) 15.49 (.610)
1.49 (.059) 16.26 (.640)
2.49 (.098)
5.38 (.212)
6.15 (.242) BSC 6.20 (.244)
Drain

20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)

4.50 (.177) Max. 2.87 (.113)

3.12 (.123)

0.40 (.016) 1.65 (.065)

0.79 (.031) 19.81 (.780) 2.13 (.084)
20.32 (.800)
1.01 (.040) Gate
1.40 (.055)
Drain
Source

2.21 (.087)
2.59 (.102) 5.45 (.215) BSC
2-Plcs.
050-5527 Rev C

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058