BD436G, BD438G, BD440G,

BD442G

Plastic Medium Power

Silicon PNP Transistor
This series of plastic, medium−power silicon PNP transistors can be
used for for amplifier and switching applications. Complementary http://onsemi.com
types are BD437 and BD441.

Features 4.0 AMP POWER

• These Devices are Pb−Free and are RoHS Compliant* TRANSISTORS PNP SILICON

COLLECTOR 2, 4

MAXIMUM RATINGS
Rating Symbol Value Unit BASE 3

Collector−Emitter Voltage VCEO Vdc

BD436G 32
BD438G 45 EMITTER 1
BD440G 60
BD442G 80
Collector−Base Voltage VCBO Vdc
BD436G 32
BD438G 45 TO−225
BD440G 60 CASE 77−09
BD442G 80 STYLE 1
Emitter−Base Voltage VEBO 5.0 Vdc
1 2
Collector Current IC 4.0 Adc 3
Base Current IB 1.0 Adc
MARKING DIAGRAM
Total Device Dissipation PD
@ TC = 25°C 36 W
Derate above 25°C 288 W/°C
YWW
Operating and Storage Junction TJ, Tstg – 55 to + 150 °C BD4xxG
Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be Y = Year
assumed, damage may occur and reliability may be affected. WW = Work Week
BD4xx = Device Code
THERMAL CHARACTERISTICS xx = 36, 36T, 38, 38T, 40, 42
Characteristic Symbol Max Unit G = Pb−Free Package

Thermal Resistance, Junction−to−Case RqJC 3.5 °C/W ORDERING INFORMATION

Device Package Shipping
BD436G TO−225 500 Units/Box
(Pb−Free)
BD436TG TO−225 50 Units/Rail
(Pb−Free)
BD438G TO−225 500 Units/Box
(Pb−Free)
BD438TG TO−225 50 Units/Rail
(Pb−Free)
BD440G TO−225 500 Units/Box
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques BD442G TO−225 500 Units/Box
Reference Manual, SOLDERRM/D. (Pb−Free)

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

December, 2013 − Rev. 16 BD438/D
 BD436G, BD438G, BD440G, BD442G

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Collector−Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 100 mA, IB = 0)
BD436G 32 − −
BD438G 45 − −
BD440G 60 − −
BD442G 80 − −

Collector−Base Breakdown Voltage V(BR)CBO Vdc

(IC = 100 mA, IB = 0)
BD436G 32 − −
BD438G 45 − −
BD440G 60 − −
BD442G 80 − −

Emitter−Base Breakdown Voltage V(BR)EBO Vdc

(IE = 100 mA, IC = 0) 5.0 − −

Collector Cutoff Current ICBO mAdc

(VCB = 32 V, IE = 0)
BD436G − − 0.1
(VCB = 45 V, IE = 0)
BD438G − − 0.1
(VCB = 60 V, IE = 0)
BD440G − − 0.1
(VCB = 80 V, IE = 0)
BD442G − − 0.1
Emitter Cutoff Current IEBO mAdc
(VEB = 5.0 V) − − 1.0

DC Current Gain hFE −

(IC = 10 mA, VCE = 5.0 V)
BD436G 40 − −
BD438G 30 − −
BD440G 20 − −
BD442G 15 − −

DC Current Gain hFE −

(IC = 500 mA, VCE = 1.0 V)
BD436G 85 − 475
BD438G 85 − 475
BD440G 40 − 475
BD442G 40 − 475

DC Current Gain hFE −

(IC = 2.0 A, VCE = 1.0 V)
BD436G 50 − −
BD438G 40 − −
BD440G 25 − −
BD442G 15 − −

Collector Saturation Voltage VCE(sat) Vdc

(IC = 2.0 A, IB = 0.2 A)
BD436G − − 0.5
(IC = 3.0 A, IB = 0.3 A)
BD438G − − 0.7
BD440G − − 0.8
BD442G − − 0.8
Base−Emitter On Voltage VBE(ON) Vdc
(IC = 2.0 A, VCE = 1.0 V)
BD436G/BD438G − − 1.1
BD440G/BD442G − − 1.5
Current−Gain − Bandwidth Product fT MHz
(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz) 3.0 − −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 BD436G, BD438G, BD440G, BD442G

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

2.0

1.6
IC = 10 mA 100 mA 1.0 A 3.0 A

1.2

0.8
TJ =
255C
0.4

0
0.05 0.070.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IB, BASE CURRENT (mA)

Figure 1. Collector Saturation Region

hFE, CURRENT GAIN (NORMALIZED)

200

100
80
60
40
20
0
10 2 3 100 1 5
IC, COLLECTOR CURRENT (AMP)

Figure 2. Current Gain

2.0 10
IC, COLLECTOR CURRENT (AMP)

TJ = 25°C
1.6 4.0 5 ms
VOLTAGE (VOLTS)

TJ = 150°C
1.2 dc
SECONDARY BREAKDOWN
1.0 THERMAL LIMIT TC = 25°C
0.8 VBE(sat) @ IC/IB = 10 BONDING WIRE LIMIT
VBE @ VCE = 2.0 V 0.5 CURVES APPLY BELOW RATED VCEO

0.4 BD438
VCE(sat) @ IC/IB = 10 BD440
BD442
0 0.1
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (AMP) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 3. “On” Voltage Figure 4. Active Region Safe Operating Area

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 BD436G, BD438G, BD440G, BD442G

PACKAGE DIMENSIONS

TO−225
CASE 77−09
4 ISSUE AC

1 2 3 2
3 1
FRONT VIEW BACK VIEW

E NOTES:
1. DIMENSIONING AND TOLERANCING PER
A1 ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.

PIN 4 MILLIMETERS
BACKSIDE TAB DIM MIN MAX
A 2.40 3.00
A1 1.00 1.50
b 0.60 0.90
D b2 0.51 0.88
P c 0.39 0.63
D 10.60 11.10
E 7.40 7.80
1 2 3
e 2.04 2.54
L 14.50 16.63
L1 1.27 2.54
P 2.90 3.30
Q 3.80 4.20
L1
STYLE 1:
PIN 1. EMITTER
L 2., 4. COLLECTOR
3. BASE

2X b2

2X e
b c

FRONT VIEW SIDE VIEW

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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Authorized Distributor

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ON Semiconductor:
BD436 BD436G BD436T BD436TG BD438 BD438G BD440 BD440G BD442 BD442G BD442S BD434S
BD436S BD438S BD436STU BD434STU BD438STU BD440S BD438TG