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SMD General Purpose Transistor (NPN)
SMD General Purpose Transistor (NPN)
Transistor (NPN)
MMBT2222A
Marking Code 1P
350 mW
Ptot Power Dissipation above 25°C (note 1)
2.8 mW/° C
MMBT2222A
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
35 - VCE=10V, IC=0.1mA
50 - VCE=10V, IC=1mA
75 - VCE=10V, IC=10mA
VCE=10V, IC=10mA
hFE D.C. Current Gain 35 -
Ta=-55° C
100 300 VCE=10V, IC=150mA*
40 - VCE=10V, IC=500mA*
50 - VCE=1.0V, IC=150mA*
V(BR)CBO Collector-Base Breakdown Voltage 75 - V IC=10µA, IE=0
V(BR)CEO Collector-Emitter Breakdown Voltage* 40 - V IC=10mA, IB=0
V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10µA, IC=0
- 0.3 IC=150mA, IB=15mA
VCEsat Collector-Emitter Saturation Voltage* V
- 1.0 IC=500mA, IB=50mA
0.6 1.2 IC=150mA, IB=15mA
VBEsat Base-Emitter Saturation Voltage* V
- 2.0 IC=500mA, IB=50mA
ICEX Collector Cut-off Current - 10 nA VEB=3V, VCE=60V
10 nA VCB=60V, IE=0
ICBO Collector Cut-off Current - VCB=60V, IE=0,
10 µA
Ta=125° C
IBL Base Cut-off Current - 20 nA VEB=3V, VCE=60V
IEBO Emitter Cut-off Current - 10 nA VEB=3V, IC=0
VCE=20V, IC=20mA,
fT Current Gain-Bandwidth Product 300 - MHz
f=100MHz
VCB=10V, f=1.0MHz,
Cobo Output Capacitance - 8.0 pF
IE=0
VEB=0.5V, f=1.0MHz,
Cibo Input Capacitance - 25 pF
IC=0
VCE=10V, IC=100µA,
NF Noise Figure - 4.0 dB
Rs=1kΩ, f=1kHz
VCB=20V, IC=20mA,
rb’Cc Collector Base Time Constant - 150 ps
f=31.8 MHz
td Delay Time - 10 IB1=15mA
IC=150mA
tr Rise Time - 25 VCC=30V
ns VEB=0.5V
ts Storage Time - 225 IB1=IB2=15mA
IC=150mA
tf Fall Time - 60 VCC=30V
*Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0%
MMBT2222A
Dimensions in mm
SOT-23
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