BFN27

PNP Silicon High-Voltage Transistors

• Suitable for video output stages in TV sets

3 2
and switching power supplies
1
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types: BFN26 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101

Type Marking Pin Configuration Package

BFN27 FLs 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 300 V
Collector-base voltage VCBO 300
Emitter-base voltage VEBO 5
Collector current IC 200 mA
Peak collector current, tp ≤ 10 ms ICM 500
Base current IB 100
Peak base current IBM 200
Total power dissipation- Ptot 360 mW
TS ≤ 74 °C
Junction temperature Tj 150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 210 K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)

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 BFN27

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 300 - - V
IC = 1 mA, IB = 0
Collector-base breakdown voltage V(BR)CBO 300 - -
IC = 100 µA, IE = 0
Emitter-base breakdown voltage V(BR)EBO 5 - -
IE = 100 µA, IC = 0
Collector-base cutoff current ICBO µA
VCB = 250 V, IE = 0 - - 0.1
VCB = 250 V, IE = 0 , TA = 150 °C - - 20
Emitter-base cutoff current IEBO - - 100 nA
VEB = 5 V, IC = 0
DC current gain1) hFE -
IC = 1 mA, VCE = 10 V 25 - -
IC = 10 mA, VCE = 10 V 40 - -
IC = 30 mA, VCE = 10 V 30 - -
Collector-emitter saturation voltage1) VCEsat - - 0.5 V
IC = 20 mA, IB = 2 mA
Base emitter saturation voltage1) VBEsat - - 0.9
IC = 20 mA, IB = 2 mA
AC Characteristics
Transition frequency fT - 100 - MHz
IC = 20 MHz, VCE = 10 V, f = 100 MHz
Collector-base capacitance Ccb - 2.5 - pF
VCB = 30 V, f = 1 MHz
1Pulse test: t < 300µs; D < 2%

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 BFN27

DC current gain hFE = ƒ(IC) Operating range IC = ƒ(VCEO)

VCE = 10 V TA = 25°C, D = 0

10 3
BFN 25/27 EHP00634 10 3

mA
5
10 µs
h FE
2
10

10 2

IC
100 µs
5
10 1
1 ms

DC
10 1
10 0
5

10 0 10 -1 0 1 2 3
-1 0 1 2 3 10 10 10 V 10
10 5 10 5 10 5 10 mA 10
ΙC VCE

Collector current IC = ƒ(VBE ) Collector cutoff current ICBO = ƒ(TA)

VCE = 10V VCBO = 200 V

BFN 25/27 EHP00632 BFN 25/27 EHP00633

10 3 10 4
mA nA
Ι CBO
ΙC max
10 3
10 2 5
5
10 2
5
10 1
5 typ
10 1
5

10 0
10 0
5
5

10 -1 10 -1
0 0.5 1.0 V 1.5 0 50 100 ˚C 150
V BE TA

3 2011-12-19
 BFN27

Transition frequency fT = ƒ(IC) Collector-base capacitance Ccb = ƒ(VCB)

VCE = 10 V Emitter-base capacitance Ceb = ƒ(VEB)

BFN 25/27 EHP00629

10 3 90

pF
MHz

fT
70

CCB(CEB )
60

50
2
10
40
CEB
5 30

20

10
CCB
10 1 0
0 4 8 12 16 V 22
10 0 5 10 1 5 10 2 mA 5 10 3
VCB(VEB
ΙC

Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp)

400 10 3

K/W
mW

300 10 2
RthJS
Ptot

250

200 10 1
D=0.5
0.2
150 0.1
0.05
0.02
100 10 0
0.01
0.005
0
50

0 10 -1 -6 -5 -4 -3 -2 0
0 15 30 45 60 75 90 105 120 °C 150 10 10 10 10 10 s 10
TS tp

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 BFN27

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp )

BFN 25/27 EHP00630

10 3
Ptot max tp
5 tp
Ptot DC D=
T
T

10 2 D=
0
0.005
5 0.01
0.02
0.05
0.1
0.2
10 1 0.5

10 0
10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0
tp

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 Package SOT23 BFN27

Package Outline

0.15 MIN.
1 ±0.1
2.9 ±0.1 0.1 MAX.
B
3

2.4 ±0.15

1.3 ±0.1
10˚ MAX.

10˚ MAX.
1 2
1)
0.4 +0.1
-0.05 0.08...0.1 A
C 5
0.95
0...8˚
1.9

0.25 M B C 0.2 M A

1) Lead width can be 0.6 max. in dambar area

Foot Print

0.8
0.9
1.3
0.9

0.8 1.2

Marking Layout (Example)

Manufacturer

EH s 2005, June
Date code (YM)

Pin 1 BCW66
Type code

Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel

4
0.9 0.2
2.13
2.65
8

Pin 1 3.15 1.15

6 2011-12-19
 BFN27

Edition 2009-11-16

Published by
Infineon Technologies AG
81726 Munich, Germany

 2009 Infineon Technologies AG

All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee

of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.

7 2011-12-19
Mouser Electronics

Authorized Distributor

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Infineon:
BFN 27 E6327