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FCQ10A03L (Diodo Schottky)
FCQ10A03L (Diodo Schottky)
FEATURES
*Similar to TO-220AB Case
*Fully Molded Isolation
*Dual Diodes – Cathode Common
*Extremely Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150 °C operation
*Wire-Bonded technology
10
Tj=25°C
Tj=150°C
1
0.5
0 0.2 0.4 0.6 0.8
INSTANTANEOUS FORWARD VOLTAGE (V)
0° 180°
θ
CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION
FCQ10A03L (Total)
6
AVERAGE FORWARD POWER DISSIPATION (W)
RECT 180°
SINE WAVE
5
0
0 2 4 6 8 10 12
AVERAGE FORWARD CURRENT (A)
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
Tj= 150 °C
FCQ10A03L (per Arm)
PEAK REVERSE CURRENT (mA) 500
200
100
50
0 5 10 15 20 25 30 35
PEAK REVERSE VOLTAGE (V)
FCQ10A03L (Total)
12
AVERAGE REVERSE POWER DISSIPATION (W)
RECT 180°
10
SINE WAVE
0
0 5 10 15 20 25 30 35
REVERSE VOLTAGE (V)
0° 180°
θ
CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
V RM =30 V
FCQ10A03L (Total)
12
RECT 180°.
SINE WAVE.
AVERAGE FORWARD CURRENT (A)
10
0
0 25 50 75 100 125 150
CASE TEMPERATURE (°C)
120
SURGE FORWARD CURRENT (A)
100
80
60
40
20 I FSM
0.02s
0
0.02 0.05 0.1 0.2 0.5 1 2
TIME (s)
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue
FCQ10A03L (per Arm)
JUNCTION CAPACITANCE (pF) 2000
1000
500
200
100
0.5 1 2 5 10 20 50
REVERSE VOLTAGE (V)