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2SJ280 L , 2SJ280 S
Silicon P Channel MOS FET

Application
LDPAK
High speed power switching
4
4

Features
• Low on–resistance 1
2
1 3
• High speed switching 2
3
2, 4
• Low drive current
• 4 V gate drive device can be driven from
5 V source 1
1. Gate
• Suitable for Switching regulator, DC – DC
2. Drain
converter 3. Source
• Avalanche Ratings 4. Drain
3

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

———————————————————————————————————————————
Drain to source voltage VDSS –60 V
———————————————————————————————————————————
Gate to source voltage VGSS ±20 V
———————————————————————————————————————————
Drain current ID –30 A
———————————————————————————————————————————
Drain peak current ID(pulse)* –120 A
———————————————————————————————————————————
Body–drain diode reverse drain current IDR –30 A
———————————————————————————————————————————
Avalanche current IAP*** –30 A
———————————————————————————————————————————
Avalanche energy EAR*** 77 mJ
———————————————————————————————————————————
Channel dissipation Pch** 75 W
———————————————————————————————————————————
Channel temperature Tch 150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
*** Value at Tch = 25 °C, Rg ≥ 50 Ω
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2SJ280 L , 2SJ280 S

Table 2 Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

———————————————————————————————————————————
Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0
voltage
———————————————————————————————————————————
Gate to source breakdown V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0
voltage
———————————————————————————————————————————
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V
———————————————————————————————————————————
Static drain to source on state RDS(on) — 0.033 0.043 Ω ID = –15 A
resistance VGS = –10 V *
————————————————————————
— 0.045 0.06 Ω ID = –15 A
VGS = –4 V *
———————————————————————————————————————————
Forward transfer admittance |yfs| 17 25 — S ID = –15 A
VDS = –10 V *
———————————————————————————————————————————
Input capacitance Ciss — 3300 — pF VDS = 10 V
————————————————————————————————
Output capacitance Coss — 1500 — pF VGS = 0
————————————————————————————————
Reverse transfer capacitance Crss — 480 — pF f = 1 MHz
———————————————————————————————————————————
Turn–on delay time td(on) — 30 — ns ID = –15 A
————————————————————————————————
Rise time tr — 170 — ns VGS = –10 V
————————————————————————————————
Turn–off delay time td(off) — 500 — ns RL = 2 Ω
————————————————————————————————
Fall time tf — 390 — ns
———————————————————————————————————————————
Body–drain diode forward VDF — –1.5 — V IF = –30 A, VGS = 0
voltage
———————————————————————————————————————————
Body–drain diode reverse trr — 200 — ns IF = –30 A, VGS = 0,
recovery time diF / dt = 50 A / µs
———————————————————————————————————————————
* Pulse Test
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2SJ280 L , 2SJ280 S

Power vs. Temperature Derating Maximum Safe Operation Area

75 –500
–300
Channel Dissipation Pch (W)

10
µs
Drain Current I D (A)

ea
–100

ar

10
)
on
R his

0
S(
50

µs
D
by t
d in

1
DC
–30

m
ite tion

PW atio
O

s
pe
lim ra

=
is pe

10
O
–10

m
(T

s
25

c
=
25
–3

°C
)
Ta = 25°C
–1
–0.5
0 50 100 150 –0.1 –0.3 –1 –3 –10 –30 –100
Case Temperature Tc (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

–50 –50
–10 V Tc = 25°C
–6 V
–25°C
–40 –4 V –40
75°C
Drain Current I D (A)

–3.5 V –3 V
D (A)

Pulse Test
–30 –30 V = –10 V
Drain Current I

GS

–20 –2.5 V –20

–10 –10
VGS = –2 V

0
0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
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2SJ280 L , 2SJ280 S

Drain-Source Saturation Voltage Static Drain-Source on State

vs. Gate-Source Voltage Resistance vs. Drain Current
–2.0 0.5
Drain to Source Saturation Voltage

Static Drain-Source on State

Pulse Test

Resistance R DS(on) (Ω )
–1.6 0.2

0.1
V DS (on) (V)

–1.2 I D = –30 A
0.05 VGS = –4 V
–0.8 –20 A
–10 V
0.02
–0.4 –10 A
0.01

0.005
0 –2 –4 –6 –8 –10 –2 –5 –10 –20 –50 –100 –200
Gate to Source Voltage VGS (V) Drain Current I D (A)

Static Drain-Source on State Forward Transfer Admittance

Resistance vs. Temperature vs. Drain Current
0.1 100
Pulse Test
Forward Transfer Admittance

Pulse test VDS = –10 V

Static Drain-Source on State

0.08 50
Resistance RDS(on) ( Ω )

I D = –30 A
Tc = 25°C
20
0.06 VGS = –4 V –25°C
75°C
–10 A, –20 A
|y fs | (s)

10
0.04
I D = –30 A 5
0.02 –10 V –10 A, –20 A
2

0 1
–40 0 40 80 120 160 –0.5 –1 –2 –5 –10 –20 –50
Case Temperature TC (°C) Drain Current I D (A)
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2SJ280 L , 2SJ280 S

Body-Drain Diode Reverse Typical Capacitance

Recovery Time vs. Drain-Source Voltage
500 10000
Reverse Recovery Time t rr (ns)

Ciss
200

C (pF)
Coss
100 1000

50 Crss

Capacitance
20 di/dt = 50 A/ µ s, VGS = 0 100
Ta = 25°C
10 VGS = 0,
f = 1 MHz
5 10
–1 –2 –5 –10 –20 –50 –100 0 –10 –20 –30 –40 –50
Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V)

Dynamic Input Characteristics Switching Characteristics

0 0 1000
VDD = –10 V td(off)
Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

–25 V
–20 –50 V –4 500 tf
VDS
Switching Time t (ns)

200
–40 –8
VDD = –10 V
–25 V 100 tr
–60 –50 V –12
VGS 50 td(on)
I D = –30 A
–80 –16
20 VGS = –10 V, VDD =: –30 V
PW = 2 µs, duty <
= 1%

–100 –20 10
0 40 80 120 160 200 –0.5 –1 –2 –5 –10 –20 –50
Gate Charge Qg (nc) Drain Current I D (A)
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2SJ280 L , 2SJ280 S

Reverse Drain Current vs. Maxmum Avalanche Energy vs.

Source to Drain Voltage Channel Temperature Derating
–50 100

Repetive Avaranche Energy E AR (mJ)

I AP = –30 A
I DR (A)

Pulse Test VDD = –25 V

–40 80
duty < 0.1%
VGS = –10 V Rg >= 50 Ω
Reverse Drain Current

–30 60

–20 40
–5 V
0, 5V
–10 20

0 0
0 –0.4 –0.8 –1.2 –1.6 –2.0
25 50 75 100 125 150
Source to Drain Voltage VSD (V) Channel Temperature Tch (°C)

Avalanche Test Circuit and Waveform

VDSS
E AR = 1 • L • I AP 2 •
L 2 VDSS – VDD
VDS
Monitor I AP V(BR)DSS
Monitor
I AP
Rg VDD
D.U.T VDS
ID
Vin
–15 V 50 Ω
VDD
0
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2SJ290
Silicon P-Channel MOS FET

Application
TO–220AB
High speed power switching

Features
• Low on–resistance
• High speed switching
• Low drive current 2

• 4 V gate drive device can be driven from 1. Gate

5 V source 1
1
2. Drain
• Suitable for Switching regulator, DC – DC 2 3. Source
3
converter
• Avalanche Ratings
3

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

———————————————————————————————————————————–
Drain to source voltage VDSS –60 V
———————————————————————————————————————————–
Gate to source voltage VGSS ±20 V
———————————————————————————————————————————–
Drain current ID –15 A
———————————————————————————————————————————–
Drain peak current ID(pulse)* –60 A
———————————————————————————————————————————–
Body–drain diode reverse drain current IDR –15 A
———————————————————————————————————————————–
Avalanche current IAP*** –15 A
———————————————————————————————————————————–
Avalanche energy EAR*** 19 mJ
———————————————————————————————————————————–
Channel dissipation Pch** 50 W
———————————————————————————————————————————–
Channel temperature Tch 150 °C
———————————————————————————————————————————–
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————–
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
*** Value at Tch = 25 °C, Rg ≥ 50 Ω