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STPS20H100C: 100 V, 20 A Power Schottky Rectifier
STPS20H100C: 100 V, 20 A Power Schottky Rectifier
Datasheet
A1
Features
K
A2 • Negligible switching losses
• High junction temperature capability
K • Low leakage current
• Good trade off between leakage current and forward voltage drop
• Avalanche rated
A2
A2 • Insulated package: TO-220FPAB
K
K A1 – Insulating voltage = 2000 VRMS sine
A1
TO-220AB TO-220FPAB • ECOPACK®2 compliant component for D²PAK on demand
K
Applications
• Switching diode
• SMPS
A2
A1 K • DC/DC converter
I2PAK • LED lighting
K K • Adapter for notebook and game station
A2
Description
A2
A1 A1
Dual center tap Schottky rectifier designed for high frequency miniature switch mode
D2PAK power supplies such as adaptors and on-board DC-DC converters.
STPS20H100C
Product summary
IF(AV) 2 x 10 A
VRRM 100 V
Tj (max) 175 °C
VF (typ) 0.59 V
1 Characteristics
Table 1. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Per diode 10
TO-220AB, D2PAK, I2PAK TC = 160 °C
Per device 20
Average forward current δ = 0.5, square
IF(AV) A
wave TC = 145 °C Per diode 10
TO-220FPAB
TC = 125 °C Per device 20
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Tj = 25 °C - 4.5 µA
IR(1) Reverse leakage current VR = VRRM
Tj = 125 °C - 2 6 mA
IF = 10 A - 0.77
Tj = 25 °C
IF = 20 A - 0.88
VF(2) Forward voltage drop V
IF = 10 A - 0.59 0.64
Tj = 125 °C
IF = 20 A - 0.67 0.73
Figure 1. Average forward power dissipation versus Figure 2. Average forward current versus ambient
average forward current (per diode) temperature (δ = 0.5, per diode)
Rth(j-a)=40°C/W
4 6
4
T T
2
2
IF(AV) (A) δ=tp/T tp δ=tp/T tp Tamb (°C)
0 0
0 2 4 6 8 10 12 0 25 50 75 100 125 150 175
Figure 3. Normalized avalanche power derating versus Figure 4. Relative variation of thermal impedance junction
pulse duration (Tj = 125 °C) to case versus pulse duration
0.8
0.1
0.6
0.4
0.01
0.2
Single pulse
t p(µs)
t p(s)
0.001 0.0
1E-3 1E-2 1E-1 1E+0
1 10 100 1000
Figure 5. Relative variation of thermal impedance junction Figure 6. Reverse leakage current versus reverse voltage
to case versus pulse duration applied (typical values, per diode)
Z th(j-c) /Rth(j-c)
1.0 IR(µA)
TO-220FPAB 1E+4
Tj=150°C
0.8 1E+3
Tj=125°C
1E+2
0.6
Tj=100°C
1E+1
0.4
1E+0
0.2 Tj=25°C
Single pulse 1E-1
t p(s)
VR(V)
0.0 1E-2
1E-2 1E-1 1E+0 1E+1 0 10 20 30 40 50 60 70 80 90 100
Figure 7. Junction capacitance versus reverse voltage Figure 8. Forward voltage drop versus forward current
applied (typical values, per diode) (maximum values, per diode)
C(pF) IFM(A)
1000 100.0
F=1MHz
VOSC=30mVRMS
Tj=25°C Tj=150°C
(typical values)
500
10.0
Tj=125°C Tj=125°C
(typical values)
Tj=25°C
200 1.0
VR(V) VFM(V)
100
0.1
1 2 5 10 20 50 100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 9. Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board
FR4, eCu = 35 µm) (D²PAK)
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40
SCu(cm²)
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
Dimensions
16.90
12.20 5.08
2.54
1.60
3.50
9.75
Dimensions
Dimensions
Dimensions
3 Ordering information
Revision history
Authorized Distributor
STMicroelectronics:
STPS20H100CFP STPS20H100CG STPS20H100CT STPS20H100CG-TR STPS20H100CR