ECE1002: Semiconductor Devices and Electronics

Experiment No. 10: Characteristics Of N-MOSFET

Submitted By: Malay Rajpoot (20BEC0664)

Aim: To test the I-V characteristics of an N-channel enhancement

MOSFET and to determine its threshold voltage and transconductance.
Components:
NMOSFET – 2N7000, Resistors, Ammeter (0-1) A, Voltmeter (0-10) V,
Connecting wires.
Drain characteristics:
• Vary the VGS in steps of a fraction of a volt and find the threshold
voltage VT.
• Vary the voltage VDS in steps of 1V and note down the corresponding
current ID for a constant VGS + VT.
• Repeat the step for another value of VGS + VT. Plot the characteristics
between VDS and ID.
Transfer characteristics:
• Vary the VGS in steps of fraction of a volt (slowly increase the step to a
volt) and note down the corresponding current ID for a constant VDS.
• Repeat the step for another value of VDS. Plot the characteristics
between VGS and ID.

Multisim Circuit:
Observation Table: (Drain Characteristics):
Id (uA)
Vds (Volts) Vgs=1V Vgs=3V Vgs=4V Vgs=5V
0 0 0 0 0
1 10 50 70 90
2 10 80 120 160
3 10 90 150 210
4 10 90 160 240
5 10 90 160 250
6 10 90 160 250
7 10 90 160 250
8 10 90 160 250
9 10 90 160 250
10 10 90 160 250
11 10 90 160 250
12 10 90 160 250
13 10 90 160 250
14 10 90 160 250
15 10 90 160 250
16 10 90 160 250
17 10 90 160 250
18 10 90 160 250
19 10 90 160 250
20 10 90 160 250

Graph:
Drain Characteristics
300

250

200
Drain Current (Id) (uA)

150

100

50

0
0 5 10 15 20 25
Drain Source Voltage (Vds) (Volts)

Vgs=1V Vgs=3V Vgs=4V Vgs=5V

Observation Table: (Transfer Characteristics):
Id (A)
Vgs (Volts) Vds=3V Vds=5V
0 6.01p 10.010p
0.2 400.01n 400.01n
0.4 1.6u 1.6u
0.6 3.6u 3.6u
0.8 6.4u 6.4u
1 10u 10u
2 40u 40u
3 90u 90u
4 150u 160u
5 210u 250u
6 270u 350u
7 330u 450u
8 390u 550u
9 450u 650u
10 510u 750u

Graph:
Transfer Characteristics
8.00E+02

7.00E+02

6.00E+02
Drain Current Id (uA)

5.00E+02

4.00E+02

3.00E+02

2.00E+02

1.00E+02

0.00E+00
0 2 4 6 8 10 12
Gate Source Voltage Vgs (Volts)

Vds=3V Vds=5V
Results:
The Threshold Voltage of the MOSFET (VTH) is 1.5V for Vds= 3V and
2.5V for Vds= 5V and its Transconductance (gm) is 60u Ω-1 for Vds= 3V
and 100u Ω-1 for Vds= 5V.

Applications:
 MOSFET is used for switching and amplifying electronics signals in the
electronic devices.
 It is used as an inverter.
 It can be used in digital circuit.
 MOSFET can be used as a high frequency amplifier.
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