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NGTB25N120IHLWG
NGTB25N120IHLWG
NGTB25N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
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into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
25 A, 1200 V
Features VCEsat = 1.85 V
• Low Saturation Voltage using Trench with Fieldstop Technology
Eoff = 0.8 mJ
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Case Temperature in IH Cooker Application C
• Low Gate Charge
• These are Pb−Free Devices
Typical Applications
G
• Inductive Heating
• Consumer Appliances
E
• Soft Switching
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.65 °C/W
Thermal resistance junction−to−case, for Diode RqJC 2.0 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W
Gate−emitter threshold voltage VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate− VGE = 0 V, VCE = 1200 V ICES − − 0.5 mA
emitter short−circuited VGE = 0 V, VCE = 1200 V, TJ = 150°C − − 2.0
DYNAMIC CHARACTERISTIC
Input capacitance Cies − 4700 − pF
Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 155 −
Reverse transfer capacitance Cres − 100 −
Gate charge total Qg 200 nC
Gate to emitter charge VCE = 600 V, IC = 25 A, VGE = 15 V Qge 38
Gate to collector charge Qgc 100
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time TJ = 25°C td(off) 235 ns
Fall time VCC = 600 V, IC = 25 A tf 160
Rg = 10 W
Turn−off switching loss VGE = 0 V/ 15V Eoff 0.8 mJ
Turn−off delay time TJ = 125°C td(off) 250 ns
Fall time VCC = 600 V, IC = 25 A tf 225
Rg = 10 W
Turn−off switching loss VGE = 0 V/ 15V Eoff 1.9 mJ
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 25 A VF 1.7 1.8 V
VGE = 0 V, IF = 25 A, TJ = 150°C 1.8
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NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
120 120
VGE = 20 to 13 V VGE = 20 to 11 V
TJ = 25°C TJ = 150°C
IC, COLLECTOR CURRENT (A)
10 V
60 60
9V
9V
40 40
8V
20 20
8V
7V
7V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics
120 120
VGE = 20 to 13 V
100 100
11 V
80 80
TJ = −40°C 10 V
60 60
40 40
9V TJ = 150°C
20 7V 20
TJ = 25°C
8V
0 0
0 1 2 3 4 5 0 5 10 15
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
10,000 120
Cies
100
IF, FORWARD CURRENT (A)
TJ = 25°C TJ = 125°C
C, CAPACITANCE (pF)
1000 80
60
100 Coes 40
Cres 20
10 0
0 25 50 75 100 125 150 175 200 0 0.5 1.0 1.5 2.0 2.5 3.0
VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)
Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics
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NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
16 2.0
14 1.8
VGE = 15 V
400 V 600 V 1.6 IC = 25 A
12 Rg = 10 W
1.4
10
1.2
8 1.0
6 0.8
0.6
4
0.4
2
0.2
0 0
0 50 100 150 200 250 0 20 40 60 80 100 120 140 160
QG, GATE CHARGE (nC) TEMPERATURE (°C)
Figure 7. Typical Gate Charge Figure 8. Energy Loss vs. Temperature
1000 3.0
Rg = 10 W
tf
100 2.0
1.5
10 1.0
VCE = 600 V
VGE = 15 V
IC = 25 A 0.5
Rg = 10 W
1 0
0 20 40 60 80 100 120 140 160 10 14 18 22 26 30 34 38 42
TEMPERATURE (°C) IC, COLLECTOR (A)
Figure 9. Switching Time vs. Temperature Figure 10. Energy Loss vs. IC
1000 3.0
Eoff, TURN−OFF SWITCHING LOSS (mJ)
tf
2.5
td(off)
SWITCHING TIME (ns)
100 2.0
1.5
10 1.0
VCE = 600 V VCE = 600 V
VGE = 15 V VGE = 15 V
TJ = 150°C 0.5
IC = 25 A
Rg = 10 W TJ = 150°C
1 0
10 14 18 22 26 30 34 38 42 5 15 25 35 45 55 65 75 85
IC, COLLECTOR (A) Rg, GATE RESISTOR (W)
Figure 11. Switching Time vs. IC Figure 12. Energy Loss vs. Rg
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NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
10,000 2.5
2.0
td(off)
SWITCHING TIME (ns)
1000
ENERGY (mJ)
1.5
tf
1.0
100
VGE = 15 V
VCE = 600 V
IC = 25 A
VGE = 15 V 0.5
Rg = 10 W
IC = 25 A
TJ = 150°C
TJ = 150°C
10 0
5 15 25 35 45 55 65 75 85 375 425 475 525 575 625 675 725 775
Rg, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Switching Time vs. Rg Figure 14. Energy Loss vs. VCE
1000 1000
1 ms 50 ms
tf 100 ms
100
10 dc operation
1
10 Single Nonrepetitive
VGE = 15 V Pulse TC = 25°C
IC = 25 A 0.1 Curves must be derated
Rg = 10 W linearly with increase
TJ = 150°C in temperature
1 0.01
375 425 475 525 575 625 675 725 775 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE Figure 16. Safe Operating Area
1000
IC, COLLECTOR CURRENT (A)
100
10
VGE = 15 V, TC = 125°C
1
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area
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NGTB25N120IHLWG
TYPICAL CHARACTERISTICS
1
20%
0.1 10%
R(t) (°C/W)
10
RqJC = 2.0
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NGTB25N120IHLWG
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NGTB25N120IHLWG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T− NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
−B− 2. CONTROLLING DIMENSION: MILLIMETER.
E
MILLIMETERS INCHES
U L
DIM MIN MAX MIN MAX
A 20.32 21.08 0.800 8.30
N B 15.75 16.26 0.620 0.640
4
C 4.70 5.30 0.185 0.209
A D 1.00 1.40 0.040 0.055
−Q− E 1.90 2.60 0.075 0.102
1 2 3 0.63 (0.025) M T B M F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
P J 0.40 0.80 0.016 0.031
−Y− K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
K N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
W J STYLE 4:
F 2 PL H PIN 1. GATE
G 2. COLLECTOR
3. EMITTER
D 3 PL 4. COLLECTOR
0.25 (0.010) M Y Q S
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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