SEMICONDUCTOR 2SC5198B Series RoHS

RoHS
Nell High Power Products

Silicon NPN triple diffusion planar transistor

10A/140V/100W

5.0 ±0 . 2
15.6±0.4 4.8±0.2

2.0

1.8
9.6 2.0±0.1

19.9±0.3

4.0
Φ3.2 ± 0,1

TO-3P(B) 2
20.0 min

4.0 max
3
+0.2 +0.2
FEATURES 1.05 -0.1 0.65 -0.1

High breakdown voltage, V CEO =140V (min) 5.45±0.1 5.45±0.1 1.4

Complementary to 2SA1941B B C E
TO-3P package which can be installed to the
heat sink with one screw C

1 2 3
APPLICATIONS B

Suitable for use in 70W high fidelity audio E NPN

amplifier’s output stage All dimensions in millimeters

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector to base voltage 140

V CEO Collector to emitter voltage 140 V

V EBO Emitter to base voltage 5

I CP Peak collector current t p ≤ 5 ms 20

IC Collector current 10 A

IB Base current 1

PC Collector power dissipation T C = 25°C 100 W

Tj Junction temperature 150

ºC
T stg Storage temperature -55 to 150

THERMAL CHARACTERISTICS (TC = 25°C)

SYMBOL PARAMETER VALUE UNIT

Rth(j-c) Thermal resistance, junction to case 1.55 ºC/W

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 SEMICONDUCTOR 2SC5198B Series RoHS
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ELECTRICAL CHARACTERISTICS (Ta = 25°C)

VALUE
SYMBOL PARAMETER CONDITIONS UNIT
MIN. TYP. MAX.

ICBO Collector cutoff current V CBO = 140V, l E = 0 5.0

µA
I EBO Emitter cutoff current V EBO = 5V, l C = 0 5.0

V (BR)CEO Collector to emitter breakdown voltage l CEO = 50mA, I B = 0 140

V CBO Collector to base voltage l CBO = 5 µA 140 V

V EBO Emitter to base voltage l EBO = 5.0 µA 5

Rank-R 55 110
h FE 1 V CE = 5V, I C = 1A
Rank-O 80 160
Forward current transfer ratio
(DC current gain)
h FE 2 V CE = 5V, I C = 5A 35 83

V CE(sat) Collector to emitter saturation voltage l C = 7A, I B = 0.7A 0.3 2.0

V
V BE Base to emitter voltage V CE = 5V, I C = 5A 0.9 1.5

Transition frequency
fT V CE = 5V, I C = 1A 30 MHz
(Gain-Bandwidth product)

C ob Collector output capacitance V CB = 10V, I E = 0, f = 1MHz 170 pF

ORDERING INFORMATION SCHEME

2SC 5198 B - R

Transistor series
NPN Type

Current & Voltage rating, IC & VCEO

10A / 140V

Package type
B = TO-3PB

DC current gain rank, hFE1

R = 55 ~ 110
O = 80 ~ 160

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 SEMICONDUCTOR 2SC5198B Series RoHS
RoHS
Nell High Power Products

Fig.1 Collector output characteristics Fig.2 Collector-Emitter saturation voltage

10 10
250 200
150 Common emitter
T C = 25°C

Saturation voltage, V CE (Sat) (V)

100
Collector current, l C (A)

1
6
50

40 T C = 100°C
4
30 0.1
T C = 25°C
2 20 T C = -25°C
Common emitter
l C /l B =10
l B = 10 mA
0 0.01
0 2 4 6 8 10 0.01 0.1 1 10 100

Collector-emitter voltage, V CE (V) Collector current, l C (A)

Fig.3 I C -V BE characteristics Fig.4 DC current gain

10 1000

8
Collector current, I C (A)

T C = 100°C
DC Current Gain, h FE

100 T C = 25°C

6
T C = -25°C
T C = 100°C

4 T C = 25°C
10
T C = -25°C
2
Common emitter Common emitter
V CE = 5V V CE = 5V
0 1
0 0.4 0.8 1.2 1.6 2.0 0.01 0.1 1 10

Base-emitter voltage, V BE (V) Collector current, l C (A)

Fig.5 Safe operating area

30
l C max (pulsed)*
1 ms*
l C max (continuous)
10 10 ms*
Collector current, l C (A)

5 DC operation
T C = 25°C
3
100 ms*

0.5
0.3 * Single nonrepetitive
pulse T C = 25°C
Curves must be derated
0.1 linearly with increase in
temperature. V CEO max
0.05
1 3 5 10 30 100 300

Collector-Emitter voltage, V CE (V)

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