TQM250NB06CR

Taiwan Semiconductor

AUTOMOTIVE N-Channel 60V 175°C MOSFET

FEATURES PRODUCT SUMMARY

● AEC-Q101 Qualified PARAMETER VALUE UNIT
● 100% UIS and Rg Tested
VDS 60 V
● 175°C Operating Junction Temperature
VGS = 10V 25
● Wettable Flank Package RDS(on) (max) mΩ
● RoHS Compliant VGS = 7V 31.6
● Halogen-free according to IEC 61249-2-21 Qg 24 nC
APPLICATIONS
● 12V Automotive Systems
● Solenoid and Motor Control
● Automotive Transmission Control
● DC-DC Converters
PDFN56U

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V

(Note 1)
TC = 25°C 32
Continuous Drain Current ID A
TA = 25°C 7
Pulsed Drain Current IDM 128 A
(Note 2)
Single Pulse Avalanche Current IAS 15 A
(Note 2)
Single Pulse Avalanche Energy EAS 34 mJ
TC = 25°C 68
Total Power Dissipation PD W
TC = 125°C 23
TA = 25°C 3.1
Total Power Dissipation PD W
TA = 125°C 1
Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +175 °C

THERMAL RESISTANCE
PARAMETER SYMBOL MAXIMUM UNIT
Thermal Resistance – Junction to Case RӨJC 2.2 °C/W
Thermal Resistance – Junction to Ambient RӨJA 48 °C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R ӨJC is guaranteed by design while RӨCA is
2
determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in pad of 2 oz copper.

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Taiwan Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT
Static
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 60 -- -- V
Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.8 2.6 3.8 V
Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA
VGS = 0V, VDS = 60V -- -- 1
VGS = 0V, VDS = 60V
-- -- 100
Drain-Source Leakage Current TJ = 125°C IDSS µA
VGS = 0V, VDS = 60V
-- -- 500
TJ = 175°C
VGS = 10V, ID = 7A -- 19 25
VGS = 10V, ID = 7A,
-- 38 50
Drain-Source On-State Resistance TJ = 125°C
(Note 3) RDS(on) mΩ
VGS = 10V, ID = 7A,
-- 49 65
TJ = 175°C
VGS = 7V, ID = 6A -- 20 31.6
(Note 3)
Forward Transconductance VDS = 10V, ID = 7A gfs -- 36 -- S
(Note 4)
Dynamic
VGS = 10V, VDS = 30V,
Total Gate Charge Qg -- 24 --
ID = 7A
Total Gate Charge Qg -- 18 -- nC
VGS = 7V, VDS = 30V,
Gate-Source Charge Qgs -- 6 --
ID = 6A
Gate-Drain Charge Qgd -- 6 --
Input Capacitance Ciss -- 1396 --
VGS = 0V, VDS = 30V,
Output Capacitance Coss -- 92 -- pF
f = 1.0MHz
Reverse Transfer Capacitance Crss -- 30 --
Gate Resistance f = 1.0MHz Rg 0.6 2.1 4.2 Ω
(Note 4)
Switching
Turn-On Delay Time td(on) -- 3 --
Rise Time VGS = 10V, VDS = 30V, tr -- 21 --
ns
Turn-Off Delay Time ID = 7A, RG = 2Ω td(off) -- 14 --
Fall Time tf -- 17 --
Source-Drain Diode
(Note 3)
Diode Forward Voltage VGS = 0V, IS = 7A VSD -- -- 1.2 V
Reverse Recovery Time IS = 7A, trr -- 19 -- ns
Reverse Recovery Charge di/dt = 100A/μs Qrr -- 16 -- nC
Notes:
1. Silicon limited current only.
2. L = 0.3mH, VGS = 10V, VDD = 30V, RG = 50Ω, IAS = 15A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.

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ORDERING INFORMATION

ORDERING CODE PACKAGE PACKING

TQM250NB06CR RLG PDFN56U 2,500pcs / 13” Reel

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Taiwan Semiconductor

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)

Output Characteristics Transfer Characteristics

40 40
VGS=10V
VGS=7V
32 VGS=6V 32

ID, Drain Current (A)

ID, Drain Current (A)

VGS=5V

24 24
VGS=4.5V
25℃
16 16

-55℃
8 8
175℃
VGS=4V
0 0
0 1 2 3 4 0 1 2 3 4 5 6
VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V)

On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge

RDS(on), Drain-Source On-Resistance (Ω)

0.035 10
VGS, Gate to Source Voltage (V)

0.03
VDS=30V
8
ID=7A
0.025 VGS=7V
6
0.02
VGS=10V
0.015
4

0.01
2
0.005

0 0
0 8 16 24 32 40 0 5 10 15 20 25
ID, Drain Current (A) Qg, Gate Charge (nC)

On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage

3 0.08
RDS(on), Drain-Source On-Resistance

RDS(on), Drain-Source On-Resistance (Ω)

VGS=10V 0.07
2.5 ID=7A
0.06
2
(Normalized)

0.05

1.5 0.04

0.03
1 ID=7A
0.02
0.5
0.01

0 0
-75 -50 -25 0 25 50 75 100 125 150 175 4 5 6 7 8 9 10

TJ, Junction Temperature (°C) VGS, Gate to Source Voltage (V)

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Taiwan Semiconductor

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)

Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature

2000 1.2

Drain-Source Breakdown Voltage

1800
ID=2mA
C, Capacitance (pF)

1600

BVDSS (Normalized)
Ciss 1.1
1400
1200
1000 1
800
600
Crss 0.9
400
Coss
200
0 0.8
0 10 20 30 40 50 60 -75 -50 -25 0 25 50 75 100 125 150 175
VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C)

Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage
1000 100
IS, Reverse Drain Current (A)

100
ID, Drain Current (A)

RDS(on)
10

10

175℃ 25℃ -55℃

1
1 SINGLE PULSE
RӨJC=2.2°C/W
TC=25°C

0.1 0.1
0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2

VDS, Drain to Source Voltage (V) VSD, Body Diode Forward Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
10
Normalized Effective Transient

SINGLE PULSE
Thermal Impedance, ZӨJC

RӨJC=2.2°C/W

Duty=0.5
Duty=0.2
0.1 Duty=0.1
Duty=0.05
Notes:
Duty=0.02
Duty = t1 / t2
Duty=0.01
TJ = TC + PDM x ZӨJC x RӨJC
Single
0.01
0.0001 0.001 0.01 0.1

t, Square Wave Pulse Duration (sec)

5 Version: A2006
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Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)

PDFN56U

SUGGESTED PAD LAYOUT (Unit: Millimeters)

MARKING DIAGRAM

Y = Year Code
TSC
WW = Week Code (01~52)
250NB06 L = Lot Code (1~9,A~Z)
YWWLF
F = Factory Code
_ = AEC-Q101 Qualified

6 Version: A2006
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Taiwan Semiconductor

Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.

Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.

7 Version: A2006