SM2203NSQG ®

N-Channel Enhancement Mode MOSFET

Features Pin Description

S
• 30V/7.4A, D
D
D
RDS(ON) = 20.5mΩ(max.) @ VGS =10V
RDS(ON) = 28.5mΩ(max.) @ VGS =4.5V G S Pin 1
D
• Reliable and Rugged D

• Lead Free and Green Devices Available DFN2x2-6

(RoHS Compliant) (1,2,5,6)
• 100% UIS Tested DD DD

Applications (3)G

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered (4)S
Systems. N-Channel MOSFET

Ordering and Marking Information

SM2203NS Package Code
QG : DFN2x2-6
Assembly Material Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Handling Code
Temperature Range TR : Tape & Reel (3000ea/reel)
Package Code Assembly Material
G : Halogen and Lead Free Device

2203A
SM2203NS QG : XXXXX XXXXX - Lot Code

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com

Rev. A.5 - November, 2014
SM2203NSQG ®

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit

Common Ratings (TA =25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
IS Diode Continuous Forward Current TA=25°C 1.5
TA=25°C 7.4
ID Continuous Drain Current A
TA=70°C 5.9
IDM a Pulsed Drain Current TA=25°C 30
TA=25°C 1.66
PD Maximum Power Dissipation W
TA=70°C 1.06
t ≤ 10s 40
RθJA Thermal Resistance-Junction to Ambient °C/W
Steady State 75
IAS b Avalanche Current, Single pulse (L=0.5mH) 7 A
b
EAS Avalanche Energy, Single pulse (L=0.5mH) 12 mJ
Note a：Pulse width limited by max. junction temperature.
Note b：UIS tested and pulse width limited by maximum junction temperature 150o C (initial temperature Tj=25 oC).

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Rev. A.5 - November, 2014
SM2203NSQG ®

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Static Characteristics
BVDS S Drain-Source Breakdown Voltage V GS=0V, IDS=250µA 30 - - V
V DS=24V, VGS=0V - - 1
I DSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage V DS=V GS, IDS=250µA 1.3 1.5 2.5 V
IGSS Gate Leakage Current V GS=±20V, V DS=0V - - ±100 nA
V GS=10V, ID S=8A - 17 20.5
RDS(ON) c Drain-Source On-state Resistance mΩ
V GS=4.5V, I DS=5A - 22 28.5
Dynamic Characteristics d
RG Gate Resistance V GS=0V,VD S=0V,F=1MHz 1 1.6 3 Ω
Ciss Input Capacitance 300 400 500
V GS=0V,
Coss Output Capacitance V DS=15V, 50 67 87 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 30 40 60
td(ON) Turn-on Delay Time - 7.6 11
tr Turn-on Rise Time V DD =15V, RL =15Ω, - 8 14
I DS=1A, VGEN =10V, ns
t d(OFF) Turn-off Delay Time R G=6Ω - 20 30
tf Turn-off Fall Time - 4 7.7
d
Gate Charge Characteristics
V DS=15V, VGS=10V,
Qg Total Gate Charge - 8 11
I DS=8A
Qg Total Gate Charge - 3.8 4.6
nC
Qgth Threshold Gate Charge V DS=15V, VGS=4.5V, - 0.7 0.9
Qgs Gate-Source Charge I DS=8A - 1.3 1.5
Q gd Gate-Drain Charge - 1.5 2
Note c：Pulse test ; pulse width ≤ 300 µs, duty cycle ≤ 2%.
Note d：Guaranteed by design, not subject to production testing.

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Rev. A.5 - November, 2014
SM2203NSQG ®

Typical Operating Characteristics

Power Dissipation Drain Current

2.0 10

1.6 8

ID - Drain Current (A)

Ptot - Power (W)

1.2 6

0.8 4

0.4 2

o o
TA=25 C TA=25 C,VG=10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

100 2
Normalized Transient Thermal Resistance

1 Duty = 0.5
it
m
Li

10 0.2
n)
(o
ds
ID - Drain Current (A)

0.1

0.05
300µs
1 0.02
1ms
0.1
10ms 0.01

100ms
0.1
1s
DC Single Pulse
2
Mounted on 1in pad
o
TA=25 C o
RθJA : 40 C/W
0.01 0.01
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright  Sinopower Semiconductor, Inc. 4 www.sinopowersemi.com

Rev. A.5 - November, 2014
SM2203NSQG ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

30 35

VGS=4,5,6,7,8,9,10V
25 30

RDS(ON) - On - Resistance (mΩ)

VGS=4.5V
ID - Drain Current (A)

20 3.5V 25

15 20
VGS=10V

10 15

3V
5 10

2.5V
0 5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

45 1.6
IDS=8A IDS =250µA

40 1.4
Normalized Threshold Voltage
RDS(ON) - On Resistance (mΩ)

35 1.2

30 1.0

25 0.8

20 0.6

15 0.4

10 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.5 - November, 2014
SM2203NSQG ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

1.8 30
VGS = 10V
1.6 IDS = 8A
10
Normalized On Resistance

1.4

IS - Source Current (A)

o
Tj=150 C
1.2
o
Tj=25 C
1.0

1
0.8

0.6

0.4
o
RON@Tj=25 C: 17mΩ
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

560 10
Frequency=1MHz VDS =15V
9
480 IDS =8A
8
VGS - Gate - source Voltage (V)

400 Ciss 7
C - Capacitance (pF)

6
320
5
240
4

160 3

2
80 Coss
1
Crss
0 0
0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright  Sinopower Semiconductor, Inc. 6 www.sinopowersemi.com

Rev. A.5 - November, 2014
SM2203NSQG ®

Typical Operating Characteristics (Cont.)

Transfer Characteristics
30

25
ID - Drain Current (A)

20

15

o
10 Tj=125 C
o
Tj=-55 C
5 Tj=25 C
o

0
0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS - Gate-Source Voltage (V)

Copyright  Sinopower Semiconductor, Inc. 7 www.sinopowersemi.com

Rev. A.5 - November, 2014
SM2203NSQG ®

Avalanche Test Circuit and Waveforms

VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD

VDD
tp IL EAS
0.01Ω

tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

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Rev. A.5 - November, 2014
SM2203NSQG ®

Package Information
DFN2x2-6
E
PIN 1
INDEX AREA

1 6

SEATING PLANE

D
2 5

A
A1
3 4
A

PIN#1 IDENTIFICATION A1
o
CHAMFER 0.150X45
A3
L K5

6 1
E1
D1

K6
b

5 2
K3
e

K1
4 3

K4
K2

S DFN2x2-6 RECOMMENDED LAND PATTERN

Y
M MILLIMETERS INCHES
B
0.275

O
MIN. MAX. MIN. MAX.
L
0.65 0.3
A 0.70 0.80 0.028 0.031

A1 0.00 0.05 0.000 0.002

A3 0.200 REF 0.008 REF

b 0.25 0.35 0.010 0.014 1.775

0.84
0.3
2.05
1.2

D 1.90 2.10 0.075 0.083

E 1.90 2.10 0.075 0.083
D1 0.90 1.10 0.035 0.043
E1 0.90 1.10 0.035 0.043
0.36

e 0.65 BSC 0.026 BSC

0.35
L 0.20 0.30 0.008 0.012 1.6
K1 0.65 0.85 0.026 0.033 UNIT: mm
K2 0.20 - 0.008 -

K3 0.20 - 0.008 -

K4 0.32 - 0.013 -

K5 0.20 0.26 0.008 0.010

K6 0.45 0.55 0.018 0.022

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Rev. A.5 - November, 2014
SM2203NSQG ®

Carrier Tape & Reel Dimensions

P2 P0
D0
T

E1
F

W
B0

B-B K0
A-A B-B
D1

P1

A0
A-A

d
H
A

T1

Application A H T1 C d D W E1 F

178.0±2.00 60.0±0.50 13.0+0.50 2.0±0.20 21.0±0.50 8.0+0.30

9.0±2.00 -0.20 -0.10 1.75±0.10 3.5±0.05

DFN2x2-6 P0 P1 P2 D0 D1 T A0 B0 K0
1.5+0.10
4.0±0.10 4.0±0.10 2.0±0.05 -0.00 1.0 MIN. 0.3±0.05 2.3±0.10 2.3±0.10 1.05±0.10

(mm)

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Rev. A.5 - November, 2014
SM2203NSQG ®

Taping Direction Information

DFN2x2-6

USER DIRECTION OF FEED

Classification Profile

Copyright  Sinopower Semiconductor, Inc. 11 www.sinopowersemi.com

Rev. A.5 - November, 2014
SM2203NSQG ®

Disclaimer

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making

great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.

All information which is shown in the datasheet is based on Sinopower’s

research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.

In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.

The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.

The products are not designed or manufactured to be used with any

equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.

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Rev. A.5 - November, 2014
SM2203NSQG ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

3 3
Package Volume mm Volume mm
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm3 Volume mm 3
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050

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Rev. A.5 - November, 2014