ELECTRONIC

CIRCUITS
 MODULE 1

Introduction to Electronics

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 MODULE 1.1

HISTORY OF ELECTRONICS

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 MODULE 1

OBJECTIVES

At the end of the discussion the students should be able to:

• Discuss the evolution of semiconductors and its characteristics
• 1791 – 1871
• English mathematician and
inventor
• Professor of mathematics at
Cambridge University
• Invented a viable mechanical
computer equivalent to digital
computers

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Difference Machine Analytical Machine
Image Sources: TechRepublic & ThoughtCo
• 1828 – 1914
• English physicist, chemist and
inventor
• Early inventor of a successful
incandescent light bulb

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• 1847 – 1931
• American inventor and
businessman
• in 1883, he detected electrons
flowing through the vacuum of
a light bulb
• this became known as the
Edison Effect

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• 1849 – 1945
• English electrical engineer
• developed a two-element
vacuum tube known as the
diode in 1897

Fleming Valve

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And Engineering and Techology Wiki
• 1873 – 1961
• American inventor
• Added third electrode (grid) on the vacuum
tubes, then called triode
• this tube could be used as both an amplifier and
a switch

Image Source: Amazon Inc.

- (November 8, 1923 – June 20,
2005) was an American electrical
engineer
- The first integrated circuit (IC) was
developed by Jack Kilby while
working at Texas Instruments in
1958
-co-inventor of the electronic
handheld calculator.

Image Source: Boylestad, R. L., and Nashelsky,

L( 2014). Electronic Devices and Circuit Theory
 Image Source: Wikipedia

History of Electronics
 Image Source: Pinterest

History of Electronics
Image Source: Wikipedia
Image Source: Wikipedia
Image Source: Amazon & Wikipedia
[1] Boylestad, R. L., and Nashelsky, L, Electronic Devices and
Circuit Theory. 2014.
[2] Floyd T.L, Electronic Devices (Electron Flow Version). 2014.
[3]Gupta, Electronic Devices and Circuits. 2016
[4]Sharma, M., Semiconductor Devices and Circuits. 2015.
[5]Ana, M. L., Electronic Devices And Circuits I. 2016.
 MODULE 1.2

INTRODUCTION TO
SEMICONDUCTORS

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 MODULE 2

OBJECTIVES

At the end of the lesson the students should be able to

• Identify semiconductor device and differentiate it from other electronic
devices.
• Explain intrinsic materials, its importance and uses.
• The Bohr model of the atom is
that electrons can circle the
nucleus only in specific orbits,
which correspond to discrete
energy levels called shells.
• Proposed by Danish physicist
Niels Bohr

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• A conductor is a material that
easily conducts electrical
current.
• It has only one electron in its
valence band, which can easily
escape to the conduction band,
leaving behind a positive ion
(the core).

Image Source: Wikipedia.

• An insulator is a material that
does not conduct electrical
current under normal
conditions.
• Nonmetals, such as glass, air,
paper, and rubber are excellent
insulators and widely used in
electronics.

Image Source: Wikipedia

• A semiconductor is a material
that is between conductors and
insulators in its ability to
conduct electrical current.
• Silicon is an example of a
single element semiconductor.
It has four electrons in its
valence band.

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The difference in energy between the
valence band and the conduction band is
called an energy gap or band gap.
Source: Electronic Devices 9th edition by Thomas Floyd
Source: Electronic Devices 9th edition by Thomas Floyd
Source: Electronic Devices 9th edition by Thomas Floyd
Source: Electronic Devices 9th edition by Thomas Floyd
Source: Electronic Devices 9th edition by Thomas Floyd
• When an electron jumps to the conduction band, a
vacancy is left in the valence band within the crystal.
This vacancy is called a hole.

• For every electron raised to the conduction band by

external energy, there is one hole left in the valence
band, creating what is called an electron-hole pair.

Introduction to Semiconductors Source: Electronic Devices 9th edition by Thomas Floyd

Source: Electronic Devices 9th edition by Thomas Floyd
Recombination occurs when a conduction-
band electron loses energy and falls back
into a hole in the valence band.

Source: Electronic Devices 9th edition by Thomas Floyd

Source: Electronic Devices 9th edition by Thomas Floyd
• Semiconductive materials do not conduct current well
and are of limited value in their intrinsic state. This is
because of the limited number of free electrons in the
conduction band and holes in the valence band.
• Intrinsic silicon (or germanium) must be modified by
increasing the number of free electrons or holes to
increase its conductivity and make it useful in
electronic devices.

Source: Electronic Devices 9th edition by Thomas Floyd

Doping is the process of controlled addition
of impurities to the intrinsic (pure)
semiconductor to increase its conductivity.

Source: Electronic Devices 9th edition by Thomas Floyd

• To increase the number of conduction-band electrons
in intrinsic silicon, pentavalent impurity atoms are
added.

• These are atoms with five valence electrons such as

Arsenic (As), Phosphorus (P), Bismuth (Bi), and
Antimony (Sb).

Source: Electronic Devices 9th edition by Thomas Floyd

 • Majority Carriers:
“electrons”

• Minority Carriers:
“holes”
Source: Electronic Devices 9th edition by Thomas Floyd
• To increase the number of holes in intrinsic silicon,
trivalent impurity atoms are added.

• These are atoms with three valence electrons such as

boron (B), indium (In), and gallium (Ga).

Source: Electronic Devices 9th edition by Thomas Floyd

 • Majority Carriers:
“holes”

• Minority Carriers:
“electrons”

Source: Electronic Devices 9th edition by Thomas Floyd

• When you take a block of silicon and dope part
of it with a trivalent impurity and the other part
with a pentavalent impurity, a boundary called
the pn junction is formed between the resulting
p-type and n-type portions.
• The pn junction is the basis for diodes, certain
transistors, solar cells, and other devices.
Source: Electronic Devices 9th edition by Thomas Floyd
Source: Electronic Devices 9th edition by Thomas Floyd
A diode is a semiconductor device with a single pn
junction and metal connections to leads. It has the
ability to pass current in only one direction.

Source: Electronic Devices 9th edition by Thomas Floyd

Source: Electronic Devices 9th edition by Thomas Floyd
Source: Electronic Devices 9th edition by Thomas Floyd
[1] Boylestad, R. L., and Nashelsky, L, Electronic Devices and
Circuit Theory. 2014.
[2] Floyd T.L, Electronic Devices (Electron Flow Version). 9th ed.
2014.
[3]Gupta, Electronic Devices and Circuits. 2016
[4]Sharma, M., Semiconductor Devices and Circuits. 2015.
[5]Ana, M. L., Electronic Devices And Circuits I. 2016.
ELECTRONIC
CIRCUITS
 Solid State Fundamentals

■ Subtopics: 1) Semiconductor Diode, and 2) Diode Biasing and Models

■ At the end of the chapter, the learner should be able to:
– Explain the parameters of a semiconductor diode
– Analyze diode circuits using different equivalent models
Semiconductor Diode
Subtopic #1
Definition:

A diode is made from a small piece of

semiconductor material in which half is doped as a
p region and half is doped as an n region with a pn
junction and depletion region in between.
• The p region is called the anode and is
connected to a conductive terminal.
• The n region is called the cathode and is
connected to a second conductive terminal.
Definition.

Establishing predetermined voltages or currents at

various points of an electronic circuit for the
purpose of establishing proper operating conditions
in electronic components.
Definition.

Fixed DC voltage or current applied to a terminal of

an electronic component in order to establish
proper operating conditions for the component.
The condition
that allows
current through
the pn junction.
1. The negative side of VBIAS is connected to the n
region of the diode and the positive side is
connected to the p region.

2. The bias voltage, VBIAS, must be greater than the

barrier potential.
The condition
that essentially
prevents current
through the
diode.
Definition.
The extremely small current that exists in reverse bias
after the transition current dies out is caused by the
minority carriers in the n and p regions that are produced
by thermally generated electron-hole pairs.

Also called leakage current or reverse saturation

current.
• Normally, the reverse current is so small that it can be
neglected.

• However, if the external reverse-bias voltage is

increased to a value called the breakdown voltage
(peak reverse voltage or PIV, peak inverse voltage),
the reverse current will drastically increase.
• The high reverse-bias voltage imparts energy to the free
minority electrons.

• They collide with atoms with enough energy to knock

valence electrons out of orbit and into the conduction
band.

• The newly created conduction electrons are also high in

energy and repeat the process.
• If one electron knocks only two others out of their valence
orbit during its travel through the p region, the numbers
quickly multiply.

• As these high-energy electrons go through the depletion

region, they have enough energy to go through the n
region as conduction electrons, rather than combining with
holes.
• The multiplication of conduction electrons just discussed is
known as the avalanche effect, and reverse current can
increase dramatically if steps are not taken to limit the
current.

• When the reverse current is not limited, the resulting

heating will permanently damage the diode.
Diode Biasing and Models
Subtopic #2
• There is a slight increase in VF above 0.7 V as the
current increases due mainly to the voltage drop
across the dynamic resistance.
• Point A corresponds to a zero-bias condition.
• Point B corresponds to where the forward voltage is
less than the barrier potential of 0.7 V.
• Point C corresponds to where the forward voltage
approximately equals the barrier potential.
• Unlike a linear resistance, the resistance of the
forward-biased diode is not constant over the entire
curve.
• Because the resistance changes as you move along
the V-I curve, it is called dynamic or ac resistance.
• The dynamic resistance of a diode is designated 𝑟′𝑑 .
(Greatest below the knee)
• With 0 V across the diode, there is no reverse current.
• When a reverse-bias voltage is applied across a diode,
there is only an extremely small reverse current (IR)
through the pn junction.
• As you gradually increase the reverse-bias voltage,
there is a very small reverse current and the voltage
across the diode increases.
• When the applied bias voltage is increased to a value
where the reverse voltage across the diode (VR)
reaches the breakdown value (VBR), the reverse
current begins to increase rapidly.
• A typical rectifier diode has a breakdown voltage of
greater than 50 V.
• Some specialized diodes have a breakdown voltage
that is only 5 V.
 𝐼𝑆1 = 𝐼𝑆 𝑒 𝑘(𝑇1 −𝑇0 )
where:
𝐼𝑆1 = saturation current at new temperature
𝐼𝑆 = saturation current at room temperature
𝑘 = 0.07 per degree Celsius
𝑇1 = new temperature
𝑇0 = room temperature
 𝑉𝑇𝐻1 = 𝑉𝑇𝐻 + 𝑘(𝑇1 − 𝑇0 )
where:
𝑉𝑇𝐻1 = threshold voltage at new temperature
𝑉𝑇𝐻 = threshold voltage at room temperature
𝑘 = -2.5 mV/°C for Ge and -2 mV/°C for Si
𝑇1 = new temperature
𝑇0 = room temperature
1. The Ideal Diode Model

2. The Simplified (Practical) Diode Model

3. The Piecewise Linear (Complete) Diode Model

[1] A. Malvino and D. Bates, Electronic Principles, New York: McGraw-Hill Education,
2016.
[2] A. Agarwal and J. Lang, Foundations of Analog and Digital Electronic Circuits, San
Francisco: Elsevier Inc, 2005.
[3] M. E. Schultz, Grob's Basic Electronics, New York: McGraw-Hill Education, 2011.
[4] S. Gibilisco, Teach Yourself Electricity and Electronics, New York: McGraw-Hill
Companies, 2002.
[5] T. L. Floyd, Electronic Devices (Conventional Current Version), New Jersey: Prentice
Hall, 2012.
[6] R. Boylestad and L. Nashelsky, Electronic Devices and Circuit Theory, New Jersey:
Pearson Education, Inc., 2013
QUESTIONS?
ELECTRONIC
CIRCUITS
 Diode as Rectifier

■ Subtopics: 1) Half-wave Rectifier, and 2) Full-wave Rectifier

■ At the end of the chapter, the learner should be able to:
– Analyze the function of a diode in a half-wave rectifier circuit
– Analyze the function of a diode in a full-wave rectifier circuit
Half-wave Rectifier
Subtopic #1
• Allows the source voltage to be stepped down as needed.
• AC source is electrically isolated from the rectifier
• Turn’s Ratio (n): determines the magnitude of voltage step-down
• IEEE Definition: “the number of turns in the secondary
• (Nsec) divided by the number of turns in the primary (Npri).”

𝑁𝑠𝑒𝑐 𝑉𝑠𝑒𝑐
𝑛= =
𝑁𝑝𝑟𝑖 𝑉𝑝𝑟𝑖
• The rectifier converts the ac input voltage to a
pulsating dc voltage
• The rectifier plays a huge role for the operation of a DC
power supply.
• DIODES are the main component for rectification.
• Diodes can be configured into two main types of
rectifiers: half-wave and full-wave rectifiers.

• A full-wave rectifier allows unidirectional (one-way)

current through the load during the entire 360° of the
input cycle, whereas a half-wave rectifier allows
current through the load only during one-half of the
cycle.
The diode conducts
during the positive
half cycle.

It does not conduct

during the negative
half cycle.
The peak inverse
voltage (PIV) is
equal to the peak
input voltage and is
the maximum
voltage across the
diode when it is not
conducting.
Draw the output voltages of each rectifier for the
indicated input voltages, as shown in Figure 2–24. The
1N4001 are specific rectifier diodes.
Draw the output voltages of each rectifier for the
indicated input voltages, as shown in Figure 2–24. The
1N4001 are specific rectifier diodes.
Full-wave Rectifier
Subtopic #2
A Center-tapped
transformer is used
with two diodes
that conduct on
alternating half-
cycles.
A Center-tapped
transformer is used
with two diodes
that conduct on
alternating half- cycles.
The PIV can be
shown by applying
KVL around the
green loop shown
for the reverse-
biased diode.
The Bridge Full-
Wave rectifier uses
four diodes connected
across the entire
secondary as shown.
The PIV rating
of the bridge
diodes is less
than that
required for the
center-tapped
configuration.
Determine the peak output voltage for the bridge rectifier in Figure 2–41.
Assuming the practical model, what PIV rating is required for the diodes?
The transformer is specified to have a 12 V rms secondary voltage for the
standard 120 V across the primary.
Determine the peak output voltage for the bridge rectifier in Figure 2–41.
Assuming the practical model, what PIV rating is required for the diodes?
The transformer is specified to have a 12 V rms secondary voltage for the
standard 120 V across the primary.
[1] A. Malvino and D. Bates, Electronic Principles, New York: McGraw-Hill Education,
2016.
[2] A. Agarwal and J. Lang, Foundations of Analog and Digital Electronic Circuits, San
Francisco: Elsevier Inc, 2005.
[3] M. E. Schultz, Grob's Basic Electronics, New York: McGraw-Hill Education, 2011.
[4] S. Gibilisco, Teach Yourself Electricity and Electronics, New York: McGraw-Hill
Companies, 2002.
[5] T. L. Floyd, Electronic Devices (Conventional Current Version), New Jersey: Prentice
Hall, 2012.
[6] R. Boylestad and L. Nashelsky, Electronic Devices and Circuit Theory, New Jersey:
Pearson Education, Inc., 2013
QUESTIONS?
ELECTRONIC
CIRCUITS
 Diode Applications

■ Subtopics: 1) Clipper Circuits, 2) Clamper and Voltage Multiplier Circuits

■ At the end of the chapter, the learner should be able to:
– Solve problems involving clipper circuits and examine the effect of the
diode biasing to such circuits
– Solve problems involving clamper circuits and examine the effect of the
diode biasing to such circuits
– Analyze different types voltage multiplier circuits.
Clipper Circuits
Subtopic #1
A diode limiter is a circuit that limits (or clips) either the
positive or negative part of the input voltage.

A biased limiter is one that has a bias voltage in series

with the diode, so that a specific voltage level can be
selected for limiting.
• Clips of the positive half-cycle of the sinusoidal signal
• Clips of the negative half-cycle of the sinusoidal signal
 𝑹𝑳
𝑽𝑶𝑼𝑻 = 𝑽𝑰𝑵
𝑹𝟏 + 𝑹𝑳
What would you expect to see displayed on an oscilloscope connected
across RL in the limiter shown in Figure 2–53?
What would you expect to see displayed on an oscilloscope connected
across RL in the limiter shown in Figure 2–53?
• The voltage is limited to a specific voltage level
• The voltage is limited to a specific voltage level
• A modified biased positive limiter can produce:
• A modified biased negative limiter can produce:
Figure 2–58 shows a circuit combining a positive limiter with a negative
limiter. Determine the output voltage waveform.
Figure 2–58 shows a circuit combining a positive limiter with a negative
limiter. Determine the output voltage waveform.
Clamper and Voltage
Multiplier Circuits
Subtopic #2
A clamper is a network constructed of a diode, a resistor,
and a capacitor.

Clamper that shifts a waveform to a different dc level

without changing the appearance of the applied signal.
Step 1: Start the analysis by examining the response of the
portion of the input signal that will forward bias the diode.

Step 2: During the period that the diode is in the “on” state,
assume that the capacitor will charge up instantaneously to a
voltage level determined by the surrounding network.
Step 3: Assume that during the period when the diode is in the
“off” state the capacitor holds on to its established voltage level.

Step 4: Throughout the analysis, maintain a continual awareness

of the location and defined polarity for VO to ensure that the
proper levels are obtained.

Step 5: Check that the total swing of the output matches that of
the input
During “ON” state:

Solving for VO:

−𝑽𝑶 + 𝟓 𝑽 = 𝟎
𝑽𝑶 = 𝟓 𝑽

Solving for VC:

−𝟐𝟎 𝑽 + 𝑽𝑪 − 𝟓𝑽 = 𝟎
𝑽𝑪 = 𝟐𝟓 𝑽
During “OFF” state:

Solving for VO:

+𝟏𝟎 + 𝟐𝟓 − 𝑽𝑶 = 𝟎
𝑽𝑶 = 𝟑𝟓 𝑽
Voltage multipliers use clamping action to increase
peak rectified voltages.

Voltage-multiplier circuits are employed to maintain a

relatively low transformer peak voltage while stepping up
the peak output voltage to two, three, four, or more times
the peak rectified voltage.
−𝑽𝒎 − 𝑽𝑪𝟏 − 𝑽𝑪𝟐 = 𝟎
−𝑽𝒎 − 𝑽𝒎 − 𝑽𝑪𝟐 = 𝟎

𝑽𝑪𝟐 = 𝟐𝑽𝒎
[1] A. Malvino and D. Bates, Electronic Principles, New York: McGraw-Hill Education,
2016.
[2] A. Agarwal and J. Lang, Foundations of Analog and Digital Electronic Circuits, San
Francisco: Elsevier Inc, 2005.
[3] M. E. Schultz, Grob's Basic Electronics, New York: McGraw-Hill Education, 2011.
[4] S. Gibilisco, Teach Yourself Electricity and Electronics, New York: McGraw-Hill
Companies, 2002.
[5] T. L. Floyd, Electronic Devices (Conventional Current Version), New Jersey: Prentice
Hall, 2012.
[6] R. Boylestad and L. Nashelsky, Electronic Devices and Circuit Theory, New Jersey:
Pearson Education, Inc., 2013
QUESTIONS?
ELECTRONIC CIRCUITS
(EE0015)
 Chapter 5
DC Power Supply

■ Subtopics: 1) Block Diagram and Functions of Each Component

2) Zener Diode as Voltage Regulator
■ At the end of the chapter, the learner should be able to:
- Explain the operation of power supply
- Solve miscellaneous problems in DC Power Supply
- Solve problems in DC power supply with Zener diode as voltage regulator
• Electrical Power Source: AC (220V 60Hz)

• Operating Power Source (for most electronic circuits): DC

Input (varying voltages)

• From AC source to DC input: Thus, the need for a power

supply unit that converts, regulates, and transmits required
power to the circuit to be operated.
Block Diagram and Functions
of Each Component
Subtopic #1
• To step down the input AC voltage to a lower level
(high voltage AC to low voltage AC)

• The low voltage AC is suitable for lamps, heaters

and special AC motors but is not suitable for
electronic circuits.

• Thus, the need for rectifier and filter.

• Rectifier produces pulsating DC unlike a constant steady value.

• Filter removes the pulsations so as to create a constant output.

• Thus, the need for filter together with the rectifier.

• To smooth out the peaks use a capacitor.

• The most common filter is a large capacitor.

• A filtered DC have small ripples suitable for most electronic circuits.

• Changes in the load or the AC line may cause the
output voltage to vary

• Most electronic circuits cannot withstand the

variations since they are designed to work
properly with a fixed voltage.

• The regulator fixes the output voltage to the

desired level and maintains the value despite any
output or input variations.

• The regulated DC output is very smooth with no

ripples which is suitable for electronic circuits.
• Regulation performance is specified in two ways:

• Line regulation specifies how much the dc output changes for

a given change in regulator’s input voltage.

• Load regulation specifies how much change occurs in the

output voltage for a given range of load current values, usually
from no load (NL) to full load (FL).
Sample Problem 1: A certain rectifier filter produces a dc output
voltage of 75 V with a peak-to-peak ripple voltage of 0.5 V.
Calculate the ripple factor.
Sample Problem 2: A certain full-wave rectifier has a peak
output voltage of 30 V. A 50 uF capacitor-input filter is connected
to the rectifier. Calculate the peak-to-peak ripple and the dc
output voltage developed across a 600 Ω load resistance.
Sample Problem 3: What value of filter capacitor is required
to produce a 1% ripple factor for a full-wave rectifier having a
load resistance of 1.5kΩ. Assume the rectifier produces a
peak output of 18 V.
Sample Problem 4: Assume the dc input to a regulator changes
by 1.0 V due to a change in the ac line voltage. If the output
changes by 1.5 mV due to the change, what is the line
regulation?
Sample Problem 5: Assume the dc output of a regulator
changes from 5.00 V to 4.96 V when the output varies from no
load to full load. What is the load regulation?
 Zener Diode as
Voltage Regulator
Subtopic #2
• The ability to keep the reverse voltage across its
terminals essentially constant is the key feature of
a Zener diode.

• A zener diode operating in breakdown acts as a

voltage regulator because it maintains a nearly
constant voltage across its terminals over a
specified range of reverse-current values.

• The zener diode maintains a nearly constant

voltage across its terminals for values of reverse
current ranging from IZK to IZM.
Sample Problem: What is the zener impedance if the zener
diode voltage changes from 4.79 V to 4.94 V when the current
changes from 5.00 mA to 10.0 mA?
• The temperature coefficient specifies the percent change in
zener voltage for each degree Celsius change in temperature.

• The temperature coefficient can be positive or negative,

depending on the zener voltage. Above 5.6 V, zeners generally
have a PTC; below about 5.6 V, they have a NTC.
Sample Problem: A 1N756 is an 8.2 V zener diode (8.2 V at
25̊C) with a positive temperature coefficient of 5.4 mV/ C
̊ . What is
the output voltage if the temperature rises to 60 ̊C?
• Zener diodes are specified to operate at a maximum power called the
maximum dc power dissipation, PD(max). The dc power dissipation is
determined by the formula:

• The maximum power dissipation of a zener diode is typically specified for

temperatures at or below a certain value. Above the specified
temperature, the maximum power dissipation is reduced according to a
derating factor. The derating factor is expressed in mW/ ̊C. The maximum
derated power can be determined with the following formula:
Sample Problem: A certain zener diode has a maximum power
rating of 400 mW at 50 C
̊ and a derating factor of 3.2mW/ C
̊
Determine the maximum power the zener can dissipate at a
temperature of 90 ̊C.
Sample Problem: Determine the minimum and the maximum
input voltages that can be regulated by the zener diode.
1N4733A: VZ=5.1 V at IZ=49 mA, IZK=1 mA, and Zz=7Ω. Pdmax = 1W
[1] A. Malvino and D. Bates, Electronic Principles, New York: McGraw-Hill Education, 2016.
[2] A. Agarwal and J. Lang, Foundations of Analog and Digital Electronic Circuits, San Francisco: Elsevier Inc, 2005.
[3] M. E. Schultz, Grob's Basic Electronics, New York: McGraw-Hill Education, 2011.
[4] S. Gibilisco, Teach Yourself Electricity and Electronics, New York: McGraw-Hill Companies, 2002.
[5] T. L. Floyd, Electronic Devices (Conventional Current Version), New Jersey: Prentice Hall, 2012.
[6] R. Boylestad and L. Nashelsky, Electronic Devices and Circuit Theory, New Jersey: Pearson Education, Inc., 2013
[7] Linear DC Power Supply | Retrieved from: https://www.slideshare.net/aidawatimustapha/chapter-1-linear-dc-power-supply
QUESTIONS?
ELECTRONIC CIRCUITS
(EE0015)
 Chapter 6
Introduction to Transistors

■ Subtopic 1) BJT, JFET and MOSFET

■ At the end of the chapter, the learner should be able to:
- Explain the basic operation of each transistor
- Differentiate application and characteristics of each transistor
BJT, JFET and MOSFET
Subtopic #1
• Bipolar Junction Transistor (BJT) – NPN and PNP
• Junction Field Effect Transistor (JFET) – N-channel and P-
channel
• Metal Oxide Semiconductor FET (MOSFET) – Depletion type
(n- and p-channel) and enhancement type (n- and p-channel)
In normal operation as amplifier, the base-emitter is forward-biased
and the base-collector is reverse-biased.
• VB=0, no current flow

• VB<0, no current flow

• VB>Vth, with current flow

The direction of conventional current is in the direction of the
arrow on the emitter terminal. IE = IC + IB IC=βIB
• CB – has Voltage Gain but no Current Gain
• CE – has both Current and Voltage Gain.
• CC – has Current Gain but no Voltage Gain.
• The JFET (or Junction Field Effect
Transistor) is a normally ON device.

• When a negative gate voltage is

applied to the FET, the electric field
causes the channel to narrow,
which in turn causes current to
decrease.
A plot of VGS to ID is called the transfer or transconductance curve. The
transfer curve is a plot of the output current (ID) to the input voltage (VGS).
• CG – has Voltage Gain but no Current Gain
• CS – has both Current and Voltage Gain.
• CD – has Current Gain but no Voltage Gain.
The metal oxide semiconductor FET uses an insulated gate to isolate the gate
from the channel. Two types are the enhancement mode (E-MOSFET) and the
depletion mode (D-MOSFET).
• An E-MOSFET has no channel until
it is induced by a voltage applied to
the gate, so it operates only in
enhancement mode.

• An n-channel type is illustrated here;

a positive gate voltage induces the
channel.
• The D-MOSFET has a channel that
can is controlled by the gate voltage.
For an n-channel type, a negative
voltage depletes the channel; and a
positive voltage enhances the
channel.

• A D-MOSFET can operate in either

mode, depending on the gate
voltage.
 Parameters BJT JFET MOSFET
Definition BJT is known as Biploar JFET is known as unipolar MOSFET is known as
Junction Device because device because current is unipolar device because
it uses both electrons due to one charge carriers current is due to one
and holes for i.e. electrons or holes. charge carriers depending
conduction. on type of MOS.
Input BJT offers low input JFET offers large input MOSFET offers very large
Resistance resistance. resistance order input resistance.
of 1MΩ to 5MΩ.
Biasing used Fixed bias, Collector Self bias& Voltage divider In DMOSFET we use self
base bias, Voltage biasing. bias and voltage divider
divider biasing. biasing, in EMOSFET we
use feedback bias and
voltage divider biasing.
 Parameters BJT JFET MOSFET
Operating Active, Saturation & Cut Ohmic & Pinch off region Linear & Saturation region
Region off region.
Thermal Thermal runaway occurs No thermal runaway. No thermal runaway.
Runaway at high temperature.
Type of device Current controlled Voltage controlled device. Voltage controlled device
device.
Terminals Base, Emitter & Gate, Drain & Source. Gate, Drain, Source .
Collector.
Input current Input current is order of Gate current is order of nA Gate current is order of pA
mA (milli ampere). (nano ampere). (pico ampere).
Applications Low Current application. Low voltage application. Since power consumption is
less used in CMOS circuits
[1] A. Malvino and D. Bates, Electronic Principles, New York: McGraw-Hill Education, 2016.
[2] A. Agarwal and J. Lang, Foundations of Analog and Digital Electronic Circuits, San Francisco: Elsevier Inc, 2005.
[3] M. E. Schultz, Grob's Basic Electronics, New York: McGraw-Hill Education, 2011.
[4] S. Gibilisco, Teach Yourself Electricity and Electronics, New York: McGraw-Hill Companies, 2002.
[5] T. L. Floyd, Electronic Devices (Conventional Current Version), New Jersey: Prentice Hall, 2012.
[6] R. Boylestad and L. Nashelsky, Electronic Devices and Circuit Theory, New Jersey: Pearson Education, Inc., 2013
[7] Discrete Electronic Circuits| Retrieved from: https://www.ques10.com/p/21259/compare-bjt-jfet-and-mosfet/
QUESTIONS?