7/22/2021 CAT II: Attempt review

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Started on Thursday, 10 June 2021, 4:00 PM

State Finished
Completed on Thursday, 10 June 2021, 5:30 PM
Time taken 1 hour 29 mins
Grade 31.00 out of 50.00 (62%)

Question 1
Correct

Mark 1.00 out of 1.00

From the graph identify the correct condition

a. T1>T2>T3

b. T1>T3=T2

c. T1>T3>T2 

d. T2>T3>T1

Your answer is correct.

The correct answer is:

T1>T3>T2

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7/22/2021 CAT II: Attempt review

Question 2
Correct

Mark 1.00 out of 1.00

The figure shows the energy diagram, choose the correct condition

a.   n>p 

b. p<n

c.  n=p

d. n=p=0

Your answer is correct.

The correct answers are:

  n>p,

p<n

Question 3
Correct

Mark 1.00 out of 1.00

A semiconductor has …… temperature coefficient of resistance

a. Positive
b. Logarithmic
c. Negative 
d. Zero

The correct answer is: Negative

Question 4
Correct

Mark 1.00 out of 1.00

At thermally equilibrium condition, the number of holes and electrons in Silicon semiconductor are

a. Equal 
b. Zero
c. Unequal
d. Unpredictable

The correct answer is: Equal

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7/22/2021 CAT II: Attempt review

Question 5
Incorrect

Mark 0.00 out of 1.00

The probability of finding an electron at fermi energy level is

a. Minimum over the temperature

b. Maximum over the temperature
c. Constant over the temperature
d. Changing over the temperature 

The correct answer is: Constant over the temperature

Question 6
Correct

Mark 1.00 out of 1.00

The value of (EF)3 in metal is

a. Directly proportional to n2/3

b.  Directly proportional to n2/3

c. Directly proportional to n2 

d. Inversely Proportional to n2

Your answer is correct.

The correct answer is:

Directly proportional to n2

Question 7
Correct

Mark 1.00 out of 1.00

Choose the correct trivalent substitution

a. Antimony
b. Aluminum 
c. Arsenic
d. Beryllium

The correct answer is: Aluminum

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7/22/2021 CAT II: Attempt review

Question 8
Correct

Mark 1.00 out of 1.00

Choose the correct equation

a.

b.

c. 

d.

Your answer is correct.

The correct answer is:

Question 9
Correct

Mark 1.00 out of 1.00

If np and ne be the numbers of holes and conduction electrons in an extrinsic semiconductor then

a. np is equal to np
b. np is greater than or less than ne 
c. np is greater than ne
d. np is less than ne

The correct answer is: np is greater than or less than ne

Question 10
Incorrect

Mark 0.00 out of 1.00

Choose the correct statement

a. Electrical conductivity of the semiconductor is tuned by external temperature

b. Conduction phenomena of semiconductors are altered by doping and External energy drive
c. Resistivity of the semiconductor is increased only by appropriate doping 
d. Conductivity is inversely proportional to carrier concentration

The correct answer is: Conduction phenomena of semiconductors are altered by doping and External energy drive

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7/22/2021 CAT II: Attempt review

Question 11
Incorrect

Mark 0.00 out of 1.00

Band gap is the

a. Difference between minimum of EV and maximum of EC

b. Difference between maximum of EV and minimum of EC
c. Difference between the carrier densities of conduction and valance band
d. Difference between energies of conduction band and valance band 

The correct answer is: Difference between maximum of EV and minimum of EC

Question 12
Correct

Mark 1.00 out of 1.00

At zero Kelvin a piece of germanium

a. Has Maximum conductivity

b. Becomes bad conductor 
c. Becomes good conductor
d. Becomes semiconductor

The correct answer is: Becomes bad conductor

Question 13
Correct

Mark 1.00 out of 1.00

If a small amount of Antimony is added to Germanium crystal

a. There will be more free electrons than holes in the semiconductor 

b. The Antimony become an acceptor atom
c. Its resistance is increased
d. It becomes a p type semiconductor

The correct answer is: There will be more free electrons than holes in the semiconductor

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7/22/2021 CAT II: Attempt review

Question 14
Correct

Mark 1.00 out of 1.00

The figure shows the energy diagram. Find the correct statement

a. Hole mobility of A is greater than B 

b. Electron mobility of B is greater than A

c. Hole mobility of B is greater than A

d. Electron mobility of A is greater than B

Your answer is correct.

The correct answer is:

Hole mobility of A is greater than B

Question 15
Correct

Mark 1.00 out of 1.00

From the figure, identify the correct statement

a. The ratio of (m*p/m*e) is 1

b.  The ratio of (m*p/m*e) is high 

c. The ratio of (m*p/m*e) is zero

d. The ratio of (m*p/m*e) is low

Your answer is correct.

The correct answer is:

 The ratio of (m*p/m*e) is high

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7/22/2021 CAT II: Attempt review

Question 16
Incorrect

Mark 0.00 out of 1.00

What could be the occupation probability of holes below fermi energy level at 0K

a. 0
b. 50% 
c. 100%
d. 10%

The correct answer is: 0

Question 17
Incorrect

Mark 0.00 out of 1.00

In case of a semiconductor, which of the following statement is wrong

a. Temperature coefficient of resistance is negative

b. At absolute zero temperature, it behaves like a conductor
c. Resistivity is in between that of a conductor and insulator 
d. Doping increases conductivity

The correct answer is: At absolute zero temperature, it behaves like a conductor

Question 18
Correct

Mark 1.00 out of 1.00

Wires P and Q have the same resistance at room temperature. When heated, resistance of P increases and that of Q decreases. We conclude
that

a. P and Q are conductors of different materials

b. P is conductor and Q is semiconductor 
c. P is semiconductor and Q is conductor
d. P is n type semiconductor conductor and Q is n type semiconductor

The correct answer is: P is conductor and Q is semiconductor

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7/22/2021 CAT II: Attempt review

Question 19
Correct

Mark 1.00 out of 1.00

The fermi distribution function is not applicable for

a. Half integer Holes

b. Half integer Electrons
c. Half integer spin of particle
d. Integer spin of particle 

The correct answer is: Integer spin of particle

Question 20
Correct

Mark 1.00 out of 1.00

Intrinsic semiconductor generally has ____________ valence electrons

a. 4 
b. 3
c. 2
d. 6

The correct answer is: 4

Question 21
Correct

Mark 1.00 out of 1.00

In a N type semiconductor, the position of the fermi level

a. Can be anywhere depending upon the doping concentration

b. Is at the center of the energy gap
c. Is higher than the center of energy gap 
d. Is lower than the center of energy gap

The correct answer is: Is higher than the center of energy gap

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7/22/2021 CAT II: Attempt review

Question 22
Correct

Mark 1.00 out of 1.00

The measure of maximum occupied energy level of a material at absolute temperature is called

a. Fermi Function
b. Band energy
c. Fermi Energy 
d. Fermi distribution

The correct answer is: Fermi Energy

Question 23
Incorrect

Mark 0.00 out of 1.00

Calculate the probability of finding an electron in fermi energy level at 400K

a. 90%
b. 50%
c. 80%
d. 30% 

The correct answer is: 50%

Question 24
Incorrect

Mark 0.00 out of 1.00

What is the charge of donor impurity once its ionized

a. Charge less
b. Positive
c. Negative 
d. None of the above

The correct answer is: Positive

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7/22/2021 CAT II: Attempt review

Question 25
Correct

Mark 1.00 out of 1.00

What it is the unit of fermi function

a. No unit 
b. eV-1
c. J
d. eV

The correct answer is: No unit

Question 26
Incorrect

Mark 0.00 out of 1.00

Fermi function is used to determine the

a. Probability of finding an electron and holes in a particular energy

b. Probability of finding an electron in a particular energy 
c. Probability of finding an electron and holes at T= 0K
d. Probability of finding an electron and holes in a particular energy and temperature

The correct answer is: Probability of finding an electron and holes in a particular energy and temperature

Question 27
Correct

Mark 1.00 out of 1.00

To decrease the resistivity of a semiconductor, we can:

a. Increase the electric field

b. Increase the carrier density 
c. Increase the cross-sectional area of the resistor
d. Decrease the mobility

The correct answer is: Increase the carrier density

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7/22/2021 CAT II: Attempt review

Question 28
Incorrect

Mark 0.00 out of 1.00

The carrier density of the semiconductor is determined by

a. Density of states 
b. Density of states X Fermi function
c. Fermi function and energy levels
d. Energy level X Fermi function

The correct answer is: Density of states X Fermi function

Question 29
Correct

Mark 1.00 out of 1.00

In a good conductor the energy gap between the condition band and the valance band is

a. Unpredictable
b. Infinite
c. Half integer
d. Zero 

The correct answer is: Zero

Question 30
Correct

Mark 1.00 out of 1.00

The electrical diffusion current appears in

a. Semiconductors 
b. Insulators
c. Metals
d. Metals and semiconductors

The correct answer is: Semiconductors

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7/22/2021 CAT II: Attempt review

Question 31
Correct

Mark 2.00 out of 2.00

The probability that a state at EC+KT is occupied by an electron is equal to the probability that a state Ev-KT is empty. Determine the position
of the fermi level as a function of Ec and EV

a. EF=(Ec+Ev)

b. EF=(Ec+Ev)/2 

c. EF=(2Ec+Ev)/2

d. EF=(Ec-Ev)/2

Your answer is correct.

The correct answer is:

EF=(Ec+Ev)/2

Question 32
Correct

Mark 2.00 out of 2.00

Find the fermi energy level for 10g of Zinc metal. The atomic number, Molecular weight and density of the Zinc is 30,65.38 and 7.1gcm-3
respectively.

a. 5.92eV

b. 7.47eV

c. 9.40eV 

d. 0

Your answer is correct.

The correct answer is:

9.40eV

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7/22/2021 CAT II: Attempt review

Question 33
Correct

Mark 2.00 out of 2.00

Assume that the Fermi energy is 0.27 eV above the valence-band energy. The value of Nv for silicon at T=300 K is Nv=1.04X1019 cm-3.
Compute the concentration of charge carrier.

a. 2X 1014

b. 3 X 1014 

c. 0.2X 1014

d. 0.3X 1014

Your answer is correct.

The correct answer is:

3 X 1014

Question 34
Correct

Mark 2.00 out of 2.00

The intrinsic carrier density is 1.5 × 1016 m–3. If the mobility of electron and hole are 0.13 and 0.13 m2 V–1 s–1, calculate the conductivity.

a. 1.2X10-4 Ohm-1m-1

b. 1.12X10-4 Ohm-1m-1

c. 4.32X10-4 Ohm-1m-1 

d. 11.2X10-5 Ohm-1m-1

Your answer is correct.

The correct answers are:

11.2X10-5 Ohm-1m-1,

4.32X10-4 Ohm-1m-1,
1.12X10-4 Ohm-1m-1,

1.2X10-4 Ohm-1m-1

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7/22/2021 CAT II: Attempt review

Question 35
Incorrect

Mark 0.00 out of 2.00

Consider two energy levels E1 = E eV below the Fermi level and E2 = E eV above the Fermi level. P1 and P2 are the probabilities of E1 and E2
being occupied the electron respectively.  Then

a. None of the above

b. P1=P2

c. P1 > P2

d. P2>P1 

Your answer is incorrect.

The correct answer is:
P1 > P2

Question 36
Incorrect

Mark 0.00 out of 2.00

Find the resistance of an intrinsic Ge rod 2 mm long, 2 mm wide and 2 mm thick at 300 K. the intrinsic carrier density 2.5 ×1019 m–
3 is at 400 K and the mobility of electron and hole are 0.39 and 0.19 m2 v–1 s–1.

a. 215.5 Ohm

b. 210 Ohm

c. 431 Ohm 

d. 400 Ohm

Your answer is incorrect.

The correct answer is:

215.5 Ohm

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7/22/2021 CAT II: Attempt review

Question 37
Incorrect

Mark 0.00 out of 2.00

A dc voltage of 10 V is applied across an n – type silicon bar having a rectangular cross – section and length of 1 cm as shown in figure. The
donor doping concentration ND and mobility of electrons µn are 1018 cm-3 and 100 𝑐𝑚2 𝑉 −1 𝑠 −1, respectively. The average time (𝑖𝑛 𝜇𝑠) taken
by the electrons to move from one end of the bar to another end is ______

a. 1 µs

b. 10 µs

c.
1000 µs

d. 
100 µs

Your answer is incorrect.

The correct answer is:
1000 µs

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7/22/2021 CAT II: Attempt review

Question 38
Incorrect

Mark 0.00 out of 2.00

Determine the probability that an energy level is occupied by the holes if the state is above the fermi level KT.

a. 73%

b. 25% 

c.

27%

d. 26%

Your answer is incorrect.

The correct answer is:

73%

Question 39
Incorrect

Mark 0.00 out of 2.00

An n – type silicon bar 0.1 cm long and 100 µm2 in cross – sectional area has a majority carrier concentration of 10 × 1020/𝑚3 and the carrier
mobility is 0.13𝑚2 /𝑣 − 𝑠 at 300K. If the charge of electron is 1.6 × 10−19

a. 0.48 M ohm

b. 1 M Ohm 

c. 0.48 Ohm

d. 1 Ohm

Your answer is incorrect.

The correct answer is:

0.48 M ohm

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7/22/2021 CAT II: Attempt review

Question 40
Correct

Mark 2.00 out of 2.00

Determine the number of quantum states in silicon between Ec and Ec+KT at T = 400K. Consider the mp*=0.56m0. me*=1.08 m0

a. 3.25 X1019 m-3J-1

b. 1.21 X1025 mm-3J-1

c. 3.25 X1019 cm-3J-1 

d. 1.21 X1025 cm-3J-1

Your answer is correct.

The correct answer is:

3.25 X1019 cm-3J-1

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