BU406, BU407

NPN Power Transistors

These devices are high voltage, high speed transistors for horizontal
deflection output stages of TV’s and CRT’s.

Features
• High Voltage www.onsemi.com
• Fast Switching Speed
• Low Saturation Voltage NPN SILICON
• These Devices are Pb−Free and are RoHS Compliant* POWER TRANSISTORS
7 AMPERES − 60 WATTS
MAXIMUM RATINGS
150 AND 200 VOLTS
Rating Symbol Value Unit
Collector−Emitter Voltage BU406 VCEO 200 Vdc
BU407 150 SCHEMATIC

Collector−Emitter Voltage BU406 VCEV 400 Vdc COLLECTOR

BU407 330 2,4

Collector−Base Voltage BU406 VCBO 400 Vdc

BU407 330
1
Emitter−Base Voltage VEBO 6 Vdc BASE
Collector Current − Continuous IC 7 Adc
− Peak Repetitive 10 3
EMITTER
Collector Current − Peak (10 ms) ICM 15 Adc
Base Current IB 4 Adc MARKING
Total Device Dissipation @ TC = 25_C PD 60 W DIAGRAM
Derate above 25°C 0.48 W/_C
Operating and Storage Junction TJ, Tstg −65 to 150 _C 4
Temperature Storage
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be TO−220 BU40xG
assumed, damage may occur and reliability may be affected. CASE 221A AY WW
STYLE 1

THERMAL CHARACTERISTICS 1
2
3 1
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 2.08 _C/W BU40x = Specific Device Code
x = 6 or 7
Thermal Resistance, Junction−to−Ambient RqJA 70 _C/W A = Assembly Location
Maximum Lead Temperature for Soldering TL 260 _C Y = Year
Purposes1/8″ from Case for 5 Seconds WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION
Device Package Shipping

BU406G TO−220AB 50 Units / Rail

(Pb−Free)

BU407G TO−220AB 50 Units / Rail

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

November, 2014 − Rev. 11 BU406/D
 BU406, BU407

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) BU406 VCEO(sus) 200 − − Vdc
(IC = 100 mAdc, IB = 0) BU407 150 − −

Collector Cutoff Current ICES mAdc

(VCE = Rated VCEV, VBE = 0) − − 5
(VCE = Rated VCEO + 50 Vdc, VBE = 0) − − 0.1
(VCE = Rated VCEO + 50 Vdc, VBE = 0, TC = 150_C) − − 1
Emitter Cutoff Current BU406, BU407 IEBO − − 1 mAdc
(VEB = 6 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage VCE(sat) − − 1 Vdc
(IC = 5 Adc, IB = 0.5 Adc)

Base−Emitter Saturation Voltage VBE(sat) − − 1.2 Vdc

(IC = 5 Adc, IB = 0.5 Adc)

Forward Diode Voltage VEC − − 2 Volts

(IEC = 5 Adc) “D” only

DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT 10 − − MHz
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 20 MHz)

Output Capacitance Cob − 80 − pF

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

SWITCHING CHARACTERISTICS
Inductive Load Crossover Time tc − − 0.75 ms
(VCC = 40 Vdc, IC = 5 Adc, IB1 = IB2 = 0.5 Adc, L = 150 mH)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 1%.

100 10

70 TJ = 100°C
IC, COLLECTOR CURRENT (AMP)

dc
hFE, DC CURRENT GAIN

25°C
50

1 BONDING WIRE LIMIT

30 VCE = 5 V THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.1
20

BU407
TC = 25°C
BU406
10
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 2 3 5 7 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain Figure 2. Maximum Rated Forward
Bias Safe Operating Area

www.onsemi.com
2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AJ
DATE 05 NOV 2019

SCALE 1:1

STYLE 1: STYLE 2: STYLE 3: STYLE 4:

PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2
3. EMITTER 3. COLLECTOR 3. GATE 3. GATE
4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2

STYLE 5: STYLE 6: STYLE 7: STYLE 8:

PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. DRAIN 2. CATHODE 2. ANODE 2. ANODE
3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY
4. DRAIN 4. CATHODE 4. ANODE 4. ANODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12:

PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1
2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2
3. EMITTER 3. DRAIN 3. GATE 3. GATE
4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42148B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−220 PAGE 1 OF 1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.

© Semiconductor Components Industries, LLC, 2019 www.onsemi.com

 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: TECHNICAL SUPPORT
Email Requests to: orderlit@onsemi.com North American Technical Support: Europe, Middle East and Africa Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910
ON Semiconductor Website: www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative

◊ www.onsemi.com
1