HG

HG RF POWER TRANSISTOR

Semiconductors
MRF1002MB
ROHS Compliance,Silicon NPN POWER TRANSISTOR

. . . designed for Class B and C common base amplifier applications in short

and long pulse TACAN, IFF, DME, and radar transmitters.
ω Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 2.0 Watts Peak
Minimum Gain = 10 dB
ω 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
ω Industry Standard Package
ω Nitride Passivated CASE 332–04, STYLE 1
ω Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal MRF1002MA
Migration
ω Internal Input Matching for Broadband Operation
ω Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Base Voltage VCBO 50 Vdc CASE 332A–03, STYLE 1
Emitter–Base Voltage VEBO 3.5 Vdc MRF1002MB

Collector Current — Continuous IC 250 mAdc

Total Device Dissipation @ TC = 255C (1) PD 7.0 Watts
Derate above 255C 40 mW/5C
Storage Temperature Range Tstg – 65 to +150 5C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) RθJC 25 5C/W

ELECTRICAL CHARACTERISTICS (TC = 255C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO 20 — — Vdc
(IC = 5.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage V(BR)CES 50 — — Vdc
(IC = 5.0 mAdc, VBE = 0)
Collector–Base Breakdown Voltage V(BR)CBO 50 — — Vdc
(IC = 5.0 mAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO 3.5 — — Vdc
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current ICBO — — 0.5 mAdc
(VCB = 35 Vdc, IE = 0)

ON CHARACTERISTICS
DC Current Gain hFE 10 — 100 —
(IC = 100 mAdc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS
Output Capacitance Cob — 2.5 5.0 pF
(VCB = 35 Vdc, IE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)

Common–Base Amplifier Power Gain GPB 10 12 — dB
(VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz)
Collector Efficiency η 40 45 — dB
(VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz)
Load Mismatch ψ
(VCC = 35 Vdc, Pout = 2.0 W, f = 1090 MHz, No Degradation in Power Output
VSWR = 10:1 All Phase Angles)

Note : Above parameters , ratings , limits and conditions are subject to change．

Sep. 1998
www.HGSemi.com