The KSE180/181/182 transistors are designed for low power audio amplification and low current, high speed switching applications. They have absolute maximum ratings of 60V, 80V, and 100V collector-base voltage depending on the model. Key electrical characteristics include a current gain of 50-250 depending on collector current, collector-emitter saturation voltages of 0.3-1.7V depending on current and model, and a current gain-bandwidth product of 50MHz at a collector current of 100mA.
The KSE180/181/182 transistors are designed for low power audio amplification and low current, high speed switching applications. They have absolute maximum ratings of 60V, 80V, and 100V collector-base voltage depending on the model. Key electrical characteristics include a current gain of 50-250 depending on collector current, collector-emitter saturation voltages of 0.3-1.7V depending on current and model, and a current gain-bandwidth product of 50MHz at a collector current of 100mA.
The KSE180/181/182 transistors are designed for low power audio amplification and low current, high speed switching applications. They have absolute maximum ratings of 60V, 80V, and 100V collector-base voltage depending on the model. Key electrical characteristics include a current gain of 50-250 depending on collector current, collector-emitter saturation voltages of 0.3-1.7V depending on current and model, and a current gain-bandwidth product of 50MHz at a collector current of 100mA.
TO-126 AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit Collector-Base Voltage : KSE180 VCBO 60 V : KSE181 80 V : KSE182 100 V Collector-Emitter Voltage VCEO : KSE180 40 V : KSE181 60 V : KSE182 80 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A 1. Emitter 2. Collector 3. Base Collector Current (Pulse) IC 6 A Base Current (DC) IB 1 A &) Collector Dissiapation (T A=25 PC 1.5 W Collector Dissipation ( T =25&) PC 12.5 W & C
Junction Temperature TJ 150
Storage Temperature T STG -65 ~ 150 & ELECTRICAL CHARACTERISTICS (Tc=25&) Characteristic Symbol Test Conditions Min Max Unit Collector Emitter Sustaining Voltage : KSE180 VCEO(sus) IC = 10mA, IB = 0 40 V : KSE181 60 V : KSE182 80 V Collector Cutoff Current : KSE180 ICBO VCB = 60V, IB = 0 0.1 uA : KSE181 VCB = 80V, IE = 0 0.1 uA : KSE182 VCB = 100V, IE = 0 0.1 uA : KSE180 & VCB = 60V, IE = 0, T C = 150 0.1 mA : KSE181 VCB = 80V, I = 0, T = 150& 0.1 mA = 100V, I = 0, T = 150& E C
: KSE182 VCB E C 0.1 mA
Emitter Cutoff Current IEBO VBE = 7V, IC = 0 0.1 uA DC Current Gain hFE VCE = 1V, IC = 100mA 50 250 VCE = 1V, IC = 500mA 30 VCE = 1V, IC = 1.5A 12 Collector Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA 0.3 V IC = 1.5A, IB = 150mA 0.9 V IC = 3A, IB = 600mA 1.7 V Base-Emitter Saturation Voltage VBE(sat) IC = 1.5A, IB = 150mA 1.5 V IC = 3A, IB = 600mA 2.0 V Base Emitter On Voltage VBE(on) VCE = 1V, IC = 500mA 1.2 V Current Gain-Bandwidth Product fT VCE = 10V, IC = 100mA, f = 10MHz 50 MHz Output Capacitance COB VCB = 10V, IE = 0, f = 0.1MHz 30 pF KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR