SILICON PROCESSING FOR THE VLSI ERA VOLUME 3: ‘THE SUBMICRON MOSFET STANLEY WOLF Ph.D. Profesor, Deprnet of sil ngionring ‘Calta Ste Universi, Lng Hea lng Beach Calo, LATTICE. PRESS ‘Sunset Bosch, CaliforniaCovers Ray Monon, Von At Renee, Lv Ang CA Copy 185 Lees ‘Stef nema, Nope hs tok my besqendcler ete ny ‘Roy mee salsa pa home esr el Leary of Congr Catlgiag i Pabeaton Data igor ge RUNTED N THE UNITED STATES OF AMERICA CONTENTS PREFACE Chap. 1 - THE ROLE OF PROCESS AND DEVICE 1 HODELS IN’ MICROELECTAONICS TECHNOLOGY 1.4 MODELS IN micROELECTROMIC TECHNOLOGY + 1.44 Devopent of rye Babe Macs 3 1120ewopmert a Erpleay Bees Moos i121 Enel Raa ens Piety Bd ode, 1122 Daria Bp ne ole 1123 fal of pa Hoe Scout Sin. 1124 Bell ef te npc Brad dle 12S PRED ¥ Proce Sa Bese on pl od 1.2 MATHEMATICAL FORMULATION OF THE pHYsicaLLy. TDRSED MODELS OF SEWICONDUCTOR PROCESSES AND Devices 1.21.Te Pysaty Bases Moet pity Dian Seon “Fee eta om anon 12.27 Pest Bed to Saricontuar Doves Bt 12 12 Tne Peco Equa 1S 412 CLOSED-FORIE ANALYTICAL SoLUTIONS vensuS TMUMERIcAL SOLUTIONS OF THE POsS THAT ARE THE PHYSICALLY BASED WODELS ‘OF MICROELECTRONICS 16 12.1 Goat Farm Anat Solon Matrnatal Aspects 16 412 mera Soon Maamaal apes 128 Camoarng te ami mngomaren ‘Sougain Gerona Gruaon Apletons $7 “sno Aaa ons Suron 1.25 aryl ooo Feeds Law Egon 18+8 Ante! Sneha One Dimes motte Pesce Einar be bones Apoamsion 23 ss engamermens moan macy ng ssa Sees a oe 142 Te nadeauny te Anas Souter of ks nd Law ‘Epunson tor tran un hr Guprcen Seven Smtr 26 142 The adequacy of Usiga OneDinensenal arma! Posson Etna te Get spc ota aio erenences 23 Chap. 2 - NUMERICAL METHODS FOR SOLVING 29 THE PARTIAL DIFFERENTIAL EQUATIONS WHICH MODEL THE PHYSICS OF SUBWICRON DEVICES AND PROCESSES 24 NUMERICAL SOLUTIONS OF DIFFERENTIAL EQUATIONS 94 22 NUIERICAL METHODS FOR SOLVING NONLINEAR PARTIAL IDIFERGHTIAL EQUATIONS 32 29 GIO GENERATION AND REFINEMENT PROCEDURES 3 241 Spee Oration 3 LAT eben Opes oh 2433 OneDineaonal Fite DifereceApprasitis 2424 evooeutol ps Ugetnion gta Fe amet aod 8 Ti Ep Tine ire. Be pe Tne bc, 25 ORDERING THE SET OF DISCRETIZED POEs ITO CRePHOPRIATE WATA FORME So 206 LINEARIZING NONLIVEAR ALGEBRAIC EQUATIONS 52 27 MATRIX ETHODS FOR SOLVING SIMULTANEOUS UNEAR [ALGEBRA Eauarions —33""* SMUATANEOUS Us 128 VISUALIZATION OF THE RESULTS 57 29 DATA BASE OF THE SIMULATION PACKAGES se 2.10 EXAMPLES OF THE pRocsouUnEs UseD To AOMERIGALt BoLve"eHe MODEL PAA. lerenehiaL eGUATIONS OF MEROELECTHONICS 59 _forogmn gs eer tong soccer oar tase 2) igen mes otng hm emt avo Eat ne egos noes Hope a sote esac team e 24.1 Gunmete trate Mate 75 2152 Newnes Gat ahon to 2.412 EVOLUTION OF MOSFET DEVICE SMMULATORS 77 2128 Game 7a 2 iaa pisces 29 2128 Tee Demerol Dave Smo 89 EFENENCES 81 Chap. 3» MOS TRANSISTOR DEVICE PHYSICS: a3 PART 1 - BASICS MOS PHYSICS and THE MOS CAPACITOR 1 BASIC Mos THEORY and HYSICS ef EAL HGS CAPACITORS (OS-C) 84 4.1 The Since te MOS-Cenathe MOSFET 85 BT on nl ot Cntr SrRor Pear eee ee no ee coke ae ae eee [EARS areca Ppa ote Sail Care Bbeio na MOS. 42 Qualave Dacueson oh tact gpyng aa oe 2+ onan orem or ote muon ss rer sarisereeartoretette ee See NE 2 echawierng a Seen EE Site Santina caesbeueeereeco Sree Tepe sie eers rs +n Elmer tc i eae pea gg yan sss seperate cocoate ug fete tones 4 THRESHOLD VOLTAGE OF IDEAL MOS CAPACITORS 175 we 2 3.5 PHYSICS OF NON-IDEAL MOS CAPACITORS baa ‘i wets taste 2 ox oF Te cus aE sr seston spear 107 trance to uments oe acre Iie eee oe Eigteemaee fs cnr oeennon oF nore Pea Oe ocen wearer, OSE Babvrn Been Sate Si Ar 159 ‘$82 SORE SURE rs ces 2.6 THE THRESHOLD VOLTAGE EQUATION oF anion as or Anes 18 ‘S.dyaos Suncrons “oa 445 QUANTITATIVE wewAvIOR OF uosreTs: Using POTENTIAL VERSUS POSITION DIAGRAMS 125 45. Genta Aproae te Deeg OC orn Curer Reson A REFERENCES 190 ‘ang chanel WOSPETs 6) 455 the Crome Stat ose 170 {154 Vote Dept Chee (or Buk apse 17845 Sqprmarel 175 {136 chmoereon ote Four MOSeEY Creat se 7 SSA) MOSPEY Madr he SCE Creat Sa M6 THRESHOLO-VOLTAGE CONTROL IN HOSFETS 182 “45:1 Mesoutg Twas Votago 182 4682 hing Toso Voinge 182 atone tr sing Teena Vote. 189 4631 pr oft Fa! pt one Bn er ‘ad ipaat Vy Add npan on te MOSFET Chrctate a8 447 SUBTHRESHOLO CURRENTS IN LONG.CHANNEL MOSFETe ‘oat when Vos ©0018 4731 Susowesnod Sing 108 ‘372 Gxtlndead oa Lesage (24) 108 |48 SUMMARY OF LONG-CHANNEL WOSFET BEHAVIOR 200 Chap. 5 - MOS TRANSISTOR DEVICE PHYSICS: 205 PART 3 - THE SUBMICRON MOSFET 51 DEVICE CHARACTERISTICS OF LONG-CHANNEL VERSUS Sha Sam, 1424 Sha-Chanal TechalVtage Shit 208 3211 Ror! Stn 22 Peo Ein fr Calg ELL Rete Bice ial Stn fo ne. 52153 Mev Sf DBL er SE pnt of a ig Soha! MOSFET '522 Narn Gia Wah Ect on Tress Vosage 222 aerate Det Soman Nero a es £529 Aeures Sho. Chsnal tase an Tesi Vtage 228 S24) Md es Pops RSE Du Ltr Da Ao ‘hie Cat 0, ere rng fou Be in of ‘hort Boon oy ot neon Dr Po eos Sat Foon or let Danae, 4.232 ott hel Props SEEM Brn Seon lt nae ep te ae of Can 4.233 st hc sie RSE es Ere iio ef Choi Dp he So Se rt fn De 45234 Mott hae SCE St rt Cpe te “Sa Oe 44 SHORT-CHANNEL EFFECTS ON SUBTHRESHIOLD SWING, ‘Sr (Gobsorace Punchtwoush) 252 53.1 Experinorealy Carasarang Preah 260 5:2 aloseing ursabough 202 53.8 using the Smianve Gxcurenac utp and CHARACTERISTICS OF MOSFETS OPERATED IN Spa ta MOSFET eo en 20 534M te artery eer Da cs a ‘ac arn ‘542 Aino, Analy Do Gr Maelo Ne ‘Stee Charm Wore Tie Sera roan 254 542 1BE Gof eS Cha NPE he Lear 22 apne Sin ote 525 Compra Vl fy Cl hse Lan. au ha “hue! MOSPEP sr on of Chae Cee ‘543 Modaing he Staton Rapin of Operant Shechar! “Rompres551 S6td Moet Ematons272 {SII Peel ge Epson 53512 BS Earn fr hn MOSFET Orr i Some 5.1 AS arn fo nh MOSFET Opt Wat ‘irri Sire eine 56 MOSFET SCALING 274 58:1 Ded of Samson MOSFETs: Sain Sueras 274 S81 Coane Ecce Cant ge & Ere So 5812 Sunred eng. 82th Cnerons Sitio WOSFET Devoe Geagr 208, 57-1 Das Methodcogy Baton te Sutvesok Sing Eauaton 205 1572 Dear Metodsiog Basséon Peau Of Curort Vue 257 ‘581 POS Devas we oan Gate 280 "LL Pach Sap ‘582 iy P08 Devas win Fitton te sel arid pSlstoe Lars et Cour Suse Sroncnanne Et 2 S82 Trae Vatnge RO Prt Chama! POS R22 Rts Sng Brat ane P08 S423 Pano Sebi of Bre Cone PHOS. ‘03 Terie Una Spm Se Share Eh [EGET Tecnu Url pe ape paper ah a Pail ses ta te act pe Pc SALLY LoD Since PHOS win Petoe S834 her PHOS Desc Src: Deed m apes Pacing ‘58 POS Gorse wing? Poyeheon att REFERENCES 918 Chap. 6- ISOLATION STRUCTURES aa IN SUBMICRON CltOS 6:1 CHARACTERIZING MOS ISOLATION 91 Tes Smuts or NMOS nen Sus 222 512 ortoupt teventon bute Sacre Devoar nWOS Cis 25 2 THE BASIC LOCOS ISOLATION PROCESS 200 421 Oeste ease Sertiensnd LOCOS Poses siz 211 Patol taper See te 213 ton oni Pe sir Layer afb Ros Ss Chute it “ 213 Pets te fo ie Chel gn 64212 Fars Wh pet Bis Bs Lng Shap {21a tne teens potion ber he 4219 Spe ing Neha lg (Jone Sct Pa eo i a 32: PorrengSomtooened S008 Sache Set 63 MODELING THE TOPOGRAPHY OF Locos STRUCTURES 249 53. Erp acoso 20 Tema Oxton 950 6 Peat Sand Masel SD Outen St £635 Siting Terral Onion R33 ‘sg Peal ase a8 ses eters ee Ss mon iiiemeraneaat Se EI ame {851 Eny Salon Tene nd Reston 280 b2 inproned Shaw Te “raion Poses45 cwos IsoLATION TECHNOLOGY #73 (61 GuiatveDesgten of sastonincuOS. 74 Sa tng aE a Dr Des (2 Lentge Croat COS Ga ne Lf aon A pepe PE 6:63 mp ain pci Grn san 00 Sac tarp Smeg PO 01 ec en Sti of Rear he Wl Stee 08 Pane Fe FE . 82 Guuniiatve odeingel COS enema 183 Experimental crocs oaton CMOS. 387 ‘444.1 Exetel Chncerntouf on -elPre FET. 6642 Epemnn Croan earn op nara Pee 6.4 Esning he Mnum n:0-9° llen Song CMOS for odig snd Speman aoa Ss ln Sing Den Reo 0:5 on 025 CHES a5 veneaesainin G08 ace 888 Locosaesteein ncMOs 205 687 Tersnbomon ee VOS er Chap. 7 - THIN GATE OXIDES: aa GROWTH AND RELIABILITY 7A GATE OXIDE CHARACTERISTICS. NEEDED (FOR suelacRON MoSFETE. see 172 PHYSICAL PICTURE OF Si0g AND THE SUSIOg INTEREACE 423, 1721 Pryenl ard rem Pere of S02 #25, 722 Tm sisiop mace ae 73 CARRIER NECTION I THE SuSI0g SYSTEM 420 71 Cwatt tors (HE) 490 72.2 etan olan uate it Gris (ANC) 484 73 FonerNoeham EN Tamelng 5 14 Dree Tamang «37 TESTS FOR GATE OXIDE RELIABILITY 428 TA. Messing Doe Stent ae “2 Masur Toro Depend’ reakoun Sahar 440 3433 Te ron mer Cm Coe Sree F235 Gace ah wns ‘AS Manerater st ela Shaeece 44) 17639 Thc agra Cua Dart Ps 7458 Chg th ily sor oe ‘THE PHENOMENON OF OXIDE BREAKDOWN 48 75. Quan Pea Nose of tO Brskoa 451 1413 ute Een tee Bge del 7.5.2 Qua oc frhe Pea Org of 8d Fae 1410 fe bach rei se Bao Moen 1824 Bpumrwle a Pehl Eck 743.natal ann Watt neo oa Fi le nyo 3553 Te Coma et Dey Foci a 544 Ug Bed ree One rn cy, 7543 Range Bn Teo Ob Did Dt. 7514 cart aoe et Do ot Cs gs 7547 bine Coero a se Oke Doge ‘are chro noe Oe 7.5 Agpesor ole Os Senkown Ply Model 77 75S i lo or xt Yr7852 WaMOs iC tr i tie, nn hart ‘Mean Cota Fire Page Oe enpradOen Se 17.6 SCREENING TESTS FOR OXIDE BREAKDOWN (SURNAM) 492 1. Moding tno to! Bn Stas a th Past urn Reta the Owe 408 1712 Proce Sos af Opin Set ol urn Condons or ‘ude Srtcown eee a8 ‘3 Exel of ping te Proce for ‘esenng Opt’ Sete Sur Conan. 480| 117 ONDE BREAKDOWN MODULE IN BERKELEY RELIABILITY oot (en 2 118 MODELS OF THIN OXIDE GROWTH 492 79 TECHNOLOGY OF THIN OXIDE GROWTH 405, 1134 xenon Funaees 405 782 Gant ee Grown Rates 405 7.3 Faso inpocing Ge Ou ines Usa. 498 784 Gata ce Growth eons 1 30 rm to etn Ox on “s.zoomm i 785. Sctd Ct us Fn hel Gr Layered CVD Lye ‘740 GATE OXIDE DAMAGE FROM PLASMA PROCESSING 504 7.10. Holos Gondusor Repro Wis Surace Con be Charged Uy ane Paras se 7192 catenorNonUnomesla Pas 08 70a Yeu Sucre ous Cheater Par nice Ono Drage S07 ina Gece Tet Messi Onde Dare 508 od ofr sein ere Pst! epee agen he Src 7305 oie Camoge MadelinVareue Pas Eing Proms 71031 Ose Doge Dig Poin or eta ic Pca 71032 One Dae Daring Rs Sng 11033 tain bet Ot one 73d Poca Fishing Poors Oxia Oarage S14 chip. 8 weut ronuarion m cuos os sree, neue win OMOE 24 iugmam a Roepe age ESSER SSkereeng mae store. 582 1521 Algnng Subsequent Peters wre viets S12 4222 twat ant Ghana Son Foam 538 825 Sprit Dein Poss 38 1.1 Revoyace Wer Techie ope eon 46 ‘4 FUTURE TRENDS IN WELL FORMATION 552 15 AFTERGATE IMPLANTATION (AGI) S54 (Chap. 9 - HOT-CARRIER RESISTANT PROCESSING AND DEVICE STRUCTURES 93 MODEL FOR THE MAXIIUM LATERAL ELECTRIC FIELD ymar IN NON-GRADED-ORAN WOSFETS. S31 183 MODELS OF HOT-CARRIER DEGRADATION PHENONENA S86 931.S:HBone Breaking tnc_560 232 pete and Hetelecron Toop Medel 560 8 Loenlonel etek Carr Oaragss Pegon rt 14 characrenze WOSrET DEGRADATION BUE TO Hor 9 Coie Paar tate nga by Het Caer Darsce 573ses yomornmen nace rca nae, Sa easeemeenaees, TEE Sen hit a 1p Ste ercemcreomeaiee oo te Reece cat cme 348 HorCamerRelbiiySrston 82 ‘Parmeter fo Cia Perma (CAS nl HOTBON) 25 DECREASING HOT CARRIER DEGRADATION BY MODIFYING "TRE MOSFET STRUCTURE’ Soe 254 Poston Oran See a8 $52 bose Dinas ran (000) 58 16 LIGHTLY DOPED DRAM (LDO) STRUCTURES 59% 61 Moding Cyaa INDO MOSFET 522 er Spl dr Evang Bye LDD MOSFET SL ca Md Cnt Earn DD Pans Ep sia Rei ye in ‘82 Oven ih roses Sane to Fom LDDs 55, 97 PERFORMANCE AND HOT-CARRIEN LIKITATIONS OF THE ‘CONVENTIONAL LOD 528 ober benno 0 See ae isd ements ee orig Sac Sn hola Se etn PI seta pe ses te Pe Teper ranch TT 129 SUMMARY OF THE LMNTATIONS OF EARLY LOD DEVICES 611 28.10 SUMARY OF THE WETHODS TO BE USED WY DESIGNING {31 {PROVED CONVENTIONAL (OXIDESPACER-8ASED) LOD 1.411 Ineatha Pe Dosing nie Regen he L0O ere Sita mattooatiny 2?” 1.112 Taig ara Bop Prete ir igart ieee Covers. OD 68 ana nmastpojeton. Sinae repitob(etD0, sna fea i St en Peremane the Crvens x2 FULLY OVERLAPPED LDD STRUCTURES 629 ond 0 mn ees aaa IA ann sgnitecee ety we LEE REEE creo wate 9181 MacloocarerOanage mn PUOSEETS exe Sasha Ecten mot Bepatonn ‘pPayPuoSrete et 2141 Mining Hygena HO atte SSO, brace IA Tra eden aco tn21112 tats ies a ieee ol femenee 9.1433 tow Prese and ATP One ihy Nied itor Pi eecmenventes APPENDIX A = MATRIX METHODS 675 APPENDIX 8 - waxistzne THE CIRCUIT PERFORMANCE OF moccesie TecHnoLoGy 89s APPENDIX C - DERIVATION OF THE BSI Jy MODEL 705, APPENDIX D - DERWATION OF THE DISCRETIZED 2.0 erwoo 708 INDEX 79 PREFACE Beech oper anoenenin man eae nae aa amecoseeetcenienanens gia tnoms saeatie apace een eh circa omaeee anton EHS Gite iene tse oe Sie ee Eger ata Rc ea se pata le a fected snraenieneiwh mee Soe Biccoer Suen oe gee fics clon fon Ve RSC Greronere eecon ‘pon ooram ig ieee ei [The Vrain stvesold swing born pene of pte aides i peetntbaroempprit ones oe catiacon ies aii Dre nce e pst ie era ogr Seregia tate iaieinens cates igs cpa pee eet Pamcttlaea iets neato Speer atocee cae eens ewes Secchi pe Sycamore Beara Govan ont omc pt Sire mre comeae ean t cotta Rieraeeeirereervageters'S coninoet eect aaTeeen aes‘Si Se paely Se Catpa tema ecm Si pte i a an pomp. Th cies? "oes the carusion of temaros MOSFET deve psc we ides ope spinster Ts at MOS ey Inet deep rl he caren rca of ick eve, Fly, ‘hp anes ates of Stone tnt) MOSPE ‘Tuts ou hg oh bas nd tater long pe DBL ‘hts pci de cn i, eid ches ‘Gap cnt wih son crn pn ens wi 2 pe geo who gonna he technnoe th spt edoinel mph emerson MOSFET. Bole ncn so fet hp om aes giao We ‘yee mar ea ea eray wos tse ea ole wit he (ying sre of sil e he rtar en the ea feos cpr emis eee ene Vit el bso oe “ey Moon of Visouy At Her nL Ale, CA vee it CHAPTER 1 ‘THE ROLE OF PROCESS AND DEVICE MODELS IN MICROELECTRONICS TECHNOLOGY xine doh wkend (uprising fo oni pro te ey 208 cnr Hwee end hy Sot an ec ena ‘icin ia ie sn. Unlruyc no lavage modng nar spac eaten foe ner ds i peer yb ed Srp rom thw ace Suh cl nt a res ncn ‘an ponent frames pinyin dss seta cc Scam an neo fo 1.1 MODELS IN MICROELECTRONIC TECHNOLOGY ‘A mode, ie ttl ws «static dsiion a ano af ‘room a yeh no or is rine propery sd ay be crore sy of tn pre Wescer poe, wed riseeccea ply the pemmern ting moles sed "sone weld py stl. Hawenr he pyr pron ‘agua buntown ty necny ort nen sed al” (Nec nc e rauhipbemcrs te abit eee ape Sia te ee emily oa be mae ape Howere see tee ln qty nema ii |ty dro. Ts quae emg mal nica i an ce rm ‘.teyaly fed mode an vile abe etgaion von of theeanomeon ceo yaa nara sn ei bg sea bt daty ene {en oc ear Ta her hl pce See dy ig nso open e Sets ge ony apa spt hs Sn ‘leg she into bay cg is ee nam qty dmapenet, on oy Smet coer oat ecepsne a Ee eS =] ‘ial et ie pr oy pe eS DY Bang ‘Shaeconcl Se neh = Lr re 1.141 Development of Physically Based Models ean ly ba ew ded des 1) a ‘Sesame dat (hie resins ate =) et om i de fs poe ih reves ula of pooann oi lai Sat epeclyinpoen ie merodecnse wow te phoneets eg eae ae ul td aerate, Two exp ach ulate ‘tn (hep fe ee del a on ly Sis ping e-news md dp of ih ‘Scns morn pe ed ea ad 120, Ts these se une mal i ia nt of pions tu szepain frnselog a qe mah, Tob in iin spensom, ch nm ms of eno at le Exes 1 muha exsist ey ele pc oad ‘Soren (0) osm xp ashy elec wn cnet o » e “ey .te rit i be ode he ae te tp ewes ne Steen masec ty enlighten ‘mat aed ens copes sl expe as aor omar iccnaeditemch sterner Dito ona Cit mse ane of ‘scence oa ani vec, ist oo ary “en oun te iter eunon ee canto ae ipo wi le ia ils yt OE Say of lel se ms et Swf cision de nts ves bn may og tt pean ren st ‘Sec persons Tt sasing tach chair an bce ampie Tu par ose fr se act nd cee Soe mote Sete nda ert en ere oc ls ron frets deol cupl ee ran) Ieee 1.4.2 Development of Empirically Based Modots 4.1.21 Empirically Based versus Physically Based to ‘Ned te sy ae one eee Iie thar ne ‘sya so maagas al enone ris guna toa ern ovens malo fat cron nares tesa oe "ane mt te leone myn bed face att the coe fle Sach od, hen ied on tsa pyc iis tre reply red model (es poe sae trig oe do) The py ad ‘Spm aan tenth 0 puyol nr or ey ‘avrg tn en as (cubic tu for cumple a ‘ove dino dog ose onde, ng in ot ina do pi ns yee ep sun emen icion ree Te! eau eer ‘eres wel anderson slong hat ly ao modes nf oe Imemancd Ont than pes of ny eer lr et ‘tends te ede ch pss te ait ns roslyn eae ae a te mene. ly al hen oe ‘lng th obiseo the mle ug ars eve pels nd ‘ipso he nine sion eect (re Fed 2 Ln ‘trerimenly teminet.Uoghhna wor sotg sll Pant fe it pp he sims re = care Spe ‘tne ome ira hos anaes 1.122 Deriving Empey Bare tod. Assos! cts, gunaine ‘pent od mer meyer einai a et ae eee yi asin et on tren einen creer aa i ‘hove tes ncn aren th od Cae as guns {eet imine The over iy asus pa ret ‘oy da on Ti opach nt ed bee op se leona ar ‘Sapam cmp frre enamine dn et ‘uma ping yom hee rat pepsie aman enn senha Te Sr ehh yun tee ope ng ‘no fates openings hacen chou other he Site eed gna. et Sr Re dina es merece ein oct fF eae totic nd ese reo sufi sown maar resin sce ft ‘Spot nora rn prs i 1.123 Role of Empirical todela In Semiconductor Simulation ge at hy ysl teen mat ca al Be ey ‘Schl Prathow my en et ouian se or snag samen or SSS eal ayn Sew meh pe onic fr rpms as Tecbanng sino mm moot {gg ly got shri, Ph ent ol ee poet it tin ne pr fetal Pec inapoiton iy gees aca ete 7 rms canna ne cn rein 1 lemming in i pi i sn ol i icici ‘Ber en canny ere fo ea cee nies [amet we rd inreimser Aan cane he MOSPET de cc ode EUR SACE ncn oan nea rm ice ‘i a alee ry fntonoe oy 1.124 examples of Quanta 4.0 sco soil in yO; 1 "SO, a ions san 350, he pow etm (eos te cameron! Det he hy age an cosh oversaw tose pedis ht he ie hn os en By 9 ee orion ath ase aye nore eb ee ig ‘eine fr gowh marae ita ven egret ip. eae cap) ctauianala panic eqn ‘hvened ia, th pratalioe of anne twos nsf cape tn itso pmlc i panama! here on cece diy eg ip ee yoy oer ce aries (o tu a tae es pt mis a 10 Na ‘Sesto caer an reaiean 40) Te dye hs eps np deemed ob 0K Toe spied 2. Te et fbn or ae itso no ner igh om tao na) cnn on bse wi pict ted el oven hs us ing te sno ks ed La son a Si am mn mu lp. 3 ce ap ‘omy aie we bel rch eons, Ca ot ‘sunt tothe ene cinsconl aesn eutionces p ‘wien a eulon eB al Arie (2) 1.12.5 PREDICT.1: & Process Simulator Based on Empire IRFTEDSn wate hat ol oe ey pe Sat Sit Fi hel ut spo fo ena ‘Rigen ered. Corint enact set eter whch ane dart Sc se ween mal ‘en ion wl PREDIT epee ee Sets ty ls sn fat 4.2 MATHEMATICAL FORMULATION OF THE PHYSICALLY-BASED MODELS OF SEMICONDUCTOR PROCESSES AND DEVICES eh bat epi mal lay fl n sngsniendce| Pests sod deve ny ae con ele res pgeal te dele ‘ihr cmp rt aa Ie» oe oon en feu ‘inch secre new eal mete epee eat Wes nt ay th ap sap gswhen ok etl Pt ty ny bape mtn nae ct aa! ite ne ptt te mam siemens Semtgeeate sat iSunceocemenanannermnenas ieebry cy atireemee ceraeimtmeiaeas ering ‘hee ote a ‘ine-conming computer calstions. . spot of tins Seed os lined fp conse ‘Tee owe to gi sen ce ‘iho eponf mar vis becuse shy owe te PDE inure! orm Ciesla re {Se al nha abn ih cmp rae ren oe wis ti ning et pk ‘ect ns yet es "ee ts of cape i pe We i rece by +o mer me a oa nce Simp eee Ly ase clad om an ais of te ol eqn 0 Seeley yan hy do sch solid assay ve oe anda oko ‘ites iy enrol mae smear rc eve h? ‘Thane athe qlee wl provide the carom oh mr fap. 2. ‘eer perl tl hy sm pee 1.24 The Physically Based Medel of Impurity Difsion in Siicon = Ficks Second Law Equation Them ive din of prs asa eo eye ESS ele el Sern te tics rt ‘eine ed nt Fane Fd tout 48, Fs) same i ed mene en it po neo ee et ee fosprint ent ser th bain a ve hii nt ln a henge ‘Siutton an funy sling et tn nd a of Dien Sheen. ume med! of sion sts ot he coco npn o8,nemerke) howe ta sne ss mest cone ale ‘Sree itr bee sag Robe Dl Lae Ean fr iv Fo an fy = Dv way 1 thse ego C i he mg concestton oe sean and i he “Tate an ocala spe nn af Fes nd Lawton ion inna san eat ao ow) ne encaaion aete ots fae daring metho (ysis) 2) val {ise bacet ic sand se cr age ‘say arene mad a ‘Fie abne fry tna mati lie fr sve hen them au he pty oacenaion ane tse 3 ig ‘shen mao os 1.2.2. The Physica! Semiconductor Device ‘epi ilannmctaypa ie til ri ei rely xpd eo i uate ce yey, te ma ‘Sent doin age cave eal of ch ced See Elst herp ween he ren ad og ao ide se ‘od ih the a de pao nh in a ceric [srtnosr an MOSSE deve MOSFEN wh xpress famous spends i iin ort on hen ote Vd Veep ban snp oe xenon yu Vo cure DMOSPET (nh Var ar pre Anse dre wl lea ‘Sona nlcrcha scl epee “he yay edd of need Cvs twos a eal eve hv nao mud by song at of edo aes, bis dsenaleui sfeou ces sandcr etin) seg seaport ma 4. Teflon eqns =p = VE =atn-p-+ N-Male (1-2) it ests eee ml dhl el) win ee ae (tector oun st dee Gnd Nya Neth Sor nd ‘epersoes) tat = hte) 4 Bn = hpi) om ‘ihe Jesh pete eta anlar eis apy a Rit by mont + 40400 ossa co) {ni iam i 18 a om pin ice ore pop ie go f crs, Ys ‘ise rm lon cai op tips ow sna, not Sei! bn arin crn pane “Tarte jan tn eae dr nen re onion, ‘pe sd tevin sing poem cn do ancl sang Siac vss co ue oe nog ‘Stes nna ve con ta eae (ming tomar iy) mn equ egond no oa (Ser concesion te Perm ner cles Fer nl) By an Ber anit - no = me p-BMAT and py = mene FAT wo overs ce 3 grein zoe eae pti iced oF ‘Return cae eas a 9 od ea pa ‘Stat jae Ey Theo bene tg att lena pe ‘ued he onal ney yap" Ghar aco oa ‘tinh atest Bf ie th ete rt fhe ete cul ern ee inna =" dE cs alah ened ‘Sm fry pesos usa eet oeiin © = OO) ‘toe toes gu se pe = (Scan). Ts sue woe ‘tins B=, he er ot em oe ‘Eup rslons rts expe ne arm ay he = mes0Ca= 9D ny = weap OKT) 1-7) ower, ae soya condos te en lel pnt nl ‘Belt ant slang wo ts Ete Ey epee elt Ey, ond anaer we anes Oy Wt ep Bs Foal onli. By ang ean we 15 mo BIT = weap teal) 7 an P= mvpIE EAT = exp -0¥KE) th nd pill uF ere eae Tuto hin ma ae! mony tn ‘Sodding un neon dred by Sboche. Rea on Hal nde procer elf iSeny aad oo SR combina Tree’ * Bone rw he yy te a an oe ts oh pe of ping lca w dpe ve, b ene th doping comnts {Spel eps ry dy lin rc ton pop ae fron A low dpi. te cs et cons ee fr andy ae Sent accan 3a 0" epee oa ow el aon (en ecm a omantuon hip™t= mar iy=pP bokeh ncn of ‘Siegel ply ty Sent orp er ~ sett 80 Be paty om guint 190 ond 1-9 ste cht for weve itn contin, he ne ‘Sonne men peal xn any erence 41.23 The Poisson Equation oats (E13). wee 9st lesan he onc ch ty ‘omy of Be Sy man ae og ‘Shen a moe eqn, eee oe lana poeta ‘cic he hry Soy cava i sve oe Oe hued sunny ht sf eed sowie pn semicon Sse ‘fen nd vont rm rest ne i Jer nai Ep Soon PBN over eeasahiecoen ‘ey ace BYE nena pe bbe pe or4.9 CLOSED-FORM ANALYTICAL SOLUTIONS vensus NUMERICAL SOLUTIONS OF THE PDEs THAT ARE THE PHYSICALLY BASED MODELS OF MICROELECTRONICS Anime eh etl atin ht eee gute pyle ‘pcr we sul fr esr sho () sag aay ngs ry ‘Sa hn pal in essai low eqn iin tens 41.3.1 Closed-Form Analytical Solutions - liathematical Aspects ‘Ace rm ea lon afer eqn rin ig ae ‘Sng ar sur of toa load yess" Ar al ‘Son may cont ne ae cows om lama Goce ‘ov emesis a oe Sense ee Fy ne an Somicc atte 1.3.2 Numerical Solutions - Mathematical Aspects {Saf eo eis fe renal when sn apne ci ris une lt oo eit tet cnt wt ye i Foe emt soa hep eve pe Me eins {Ae na a i ti ote et ‘eg egaon an ead ing ype ea Salon ied ‘Seething pra lc he meat gen se ia wh in soe en hee 41.3.3 Comparing the Analytical and Numericat Solutions In. Semiconductor Simulation Applications ‘Scion i ios ht fan aie ol POE cm be a, ad ‘heaton nd gv oo omen wi exis ert he ‘ence poren pheno gsi ee non te POE a a man, ones arene Timi fae mein eh es sone be ‘bl eng sens hn ae my re mont ee laton of press scons’ aoe ea aly teppei mee cercicnec {stein tl capt, PE in ‘sea canner rece in ey oe ‘Saat inan aa snes of PO To sae su a ny Siete matey opin ea ain oe, ‘stmt eh seeon atic mal ae tng foe rept ty SSSGy etn! ciate" tat by ph tet fn mee rly Senet pn ny ene ‘Suction sum econ pce eae 4.3.4 Role of Analytical Solutions in Submicron ‘Semiconductor Technology‘err te gm in a ‘Uso een als ed mods pV bof eis ‘shut aa nals (SPICE We sag evr oe fect evs cue anaes ee i mt Icompusinalyecn say sews nb n a hein bei ina poe Sage pot ier ares etn nut ea e en poe ‘rl ett ome fg atin ‘esses Geto ms MOSFET ince ‘cinoma os oie ge pean oh ee a Ft "porta ft doping ds fw fai pes ego sor nln dior ie Sach none os ay ‘Scuuned amc apc ald op, During te erly pane af sew pss reves vpn ie su et ami ie te Se pmo ee ‘ole anil mods we aie, fa pe ‘Sloss my yd th nal xe mp of pce Siig Sp ae ay ph hs ‘toque prod en ar ton sesh ep ‘Seismic tos 2a pg ‘ight bee er ein eons onde {nt necting mate! ta et et ean me ‘sens st peor ig meen ay a, Wl fate covos Gr the cer hand aerial te ‘ma eer Oe enone nie ee Sas wtchiresartrn mmefytesed fuer ray This especialy impramtwhes ops compen as chs Recon some of tin pe sr a (andthe came cae psec D on enpen) dercaps et fhe Sano dping rae wis ime epee er Timson asprin oe ta mee ‘Sunni acne ple io an eageseLet west hs ee coin hg wat ei can th i te ‘lage ete agro oan! evr Carpartan of he ney Scitech marvin te "Wa gant feet a nd benno he Ps eqn cies en a ste ae. fue tones ch spd fr fe Poor equa ete el Siete sansa apa Eder Tas enema Seething ey yd set eos oe Sy eT Tne eile ee soi ce ‘Sue ee nr at ge tel lng a alge “Tin vce aici ht mae ee! orden chines anya snr etch! MOSFET fs 25, Sand ap dain ur wenger ines cre nay pad, schnapps 4.9.5 Analytic Solutions of Fick's 2nd Law Equation Ite Ph td Law sion aml oa ene inion, ado {in steht cosa vere rout he ce gin i ee tien pons nae pose om Ge gai (esoeta =DICHH A cy eee on ten nomi i a sha jaar cee ocr pee aie tp se a ‘Ge, n=O) rng cision consi ale Cth mp COMESNKION o Splmetemaactercaemten melanie Sah eee ee Snes ee Secon eereerera on omeeae (965 om . far cnt concn cua t= Cale stH001 = cic (ONRDINen-eHOM 1-12) eho san se Q pre of pry nem. Te frm ae Inch ele he salto he ed ne id ‘heme prpantin rc ny ih 1 ees ean telion \e a si rasan sy, Te cnn ncn tn sxampl th one othe ferent tun tines Pig -aaed 17 vB _ i eecearea cen elcemmmanesnegn Si thoes tearart oucwmaminen doteha ma a poet menace ee cami te ‘Wel ane hab he eB, ee Cnn ion et ne a Lina yen pe premio seca cue rc eee eee ‘penn aac sere teaser eeneniereeete Sncesion se wcinty uonstnw meaaieey hears eetcloaelenfl te Dn Pes and Law eee gen ow ee ed ‘Spree ter: Sa eghmenea winroute eee ee eee islentbeneeamencaee ‘The clost-orm satons given by Exe 1-1 ad I-12 wae widely ws 0 mode ‘hee Spel th at per ec Se Spi of el opm in Ison devs ng he It A Bo in tole tes hepa el se eaoh TN ‘nrc ou ss ce pnt i a nes pen ‘Spot deve cts he ay an ive B11 so | ‘ite dvice muy poe pee, ene nr ven of ers ep nanan spot tn ps) alae ag Dares 1.36 Analytical Solutions of the One-Dimensional Form 1 the Polason Equation in the Depletion Approximation Inte (orn we) Siena for, ses mia on of be Pion onion fn pte the etn on en teresa oe wig Eerie Neer by sing ssoaer of ptm ft ope ‘Sovran petit omnes Sve tee enn at {egled epee ere co frm snr on eae Taw the poh aoe malig geen FET nie str hay ns | ‘tEtnancr ppl, ay hb hee ees edo & » ‘e197 ef a Cnn py dw oid tte 1. Risley See he ronan es ss est sings CEUTA i yd on re oo Sp ea ig a on fe te 2 = ‘a con a inal even at ey ae ly & or tmp eo ene ‘SDIMGN nny pore nse24 suo mocessno FORT VLSTERA-VOLINE md ag he MOSFET we sh die in ein chp ee et os in bos cpr ttnca h eke ‘econ plea ex, dyad dye = ition i we ace: {Wnt dig xs nthe secon (Np and we ae ‘epcon srocinson (=p =O en min am ean ne Shunde rpm af MOS capac sa de ders eng ola? = 9 Weare ‘The Pan qin ei a oy, a teen eusion cn sy be mcr ey tn oe on arin conc ‘hati sumang9=0frtclw he aa wee = 20) = at ow et ut te alo (ae sue (=), an ithe elo de, ‘Seca whch mah cte camo se 4 tae ETNA ay Ado a -W wa dene ie ca of MO tr, el a sti. i he aon of 3 agony Ey a4 towed meee be ‘Soe pong eins ME oc sn Ve On Sj insu dercey iain grail ane aan sein cp ‘Win hg eniaon ak te pifed MOSFET Ses mals ee {© sina the xpotmenny sbered Sn set fi) rae te ay owee devices shan sn wih hy tne son es nls ‘porns so opt sel meh he cid ua wel "itp een wih enema napa nde mol ma fe odie eat hese bee pal eu ce 1.4 CIRCUMSTANCES UNDER WHICH THE ANALYTIC SOLUTIONS OF THESE POES BECOME INADEQUATE FOR SIMULATION PURPOSES 1.4.1 The Inadequacy of the Analytic Solutions of Fick's 2nd Law Equation for Simulating Diffusion in Submicron Device Structures. 1 comin eben se bav, ern sme es stem rn esi oly Oe tin ‘see (Eye i tn 10) val ea fg eect coreg ag ‘feo eed se po tegen es fe ve pt y ‘atte fines Further bsue eth ch pyc tle oad nse ps sth ile pen pan proce be {ives ace iets MOS wee sant me geal ‘Sn cxpy ft escuela is S| ‘ma ied Flan ee fotento bein Sidy erm soe ges di ih rectly te Gas olsen savin. -0 12. he doping canon iene ii cnn ‘nae fen eure he Sng dle se peprto os ‘nuh ete pa pei Sw ma afar ‘Smee Dicom none onan (=A te OF ne& : s Bo r sso Pe ine erties be pile pt meta Rp ih poe a lve eA ~ A (OC) OD, wich sane POE Sevmig etc shoving co nh «Nel Soo ac ig rT cp a LEC MECELS AECROSECTRONES TECHNOLOGY 27 ‘4.18 osnsson of 0 ye dob Sr dvs ings nwa eped mar (Fp -2) anor tne ied aa ‘ested Th bn ian dg ser dr me ot (Siar barge Trae ne i ay ‘Seems sags ene eo, be ro iy etow ses ot pment). Ie dvo eles whe nan oh tc as ein sic terme pio ep owen sal seinen ‘ou umetonmenodr theo efsonpuea muted aa sen guacy of Using a One-Dimensional Form of the Polsson Equation and ‘the Depletion ‘Approximation to Model Submicron MOSFET Behavior. ‘Slvmcy mde ne ateone paces abies MOSFET: Pek ia ow ee Seni dio ea oh i eon prntin ined, Pann esto es einen tut be we Han. Hoon Ge) a6 “me, Be petrmertere merit] eh en qo ni er ep href mi ‘dt cre isobar Sno gen Bana se Toe Ems scctndonieeyenly soe ptt ni ‘ttn fie asym sconce rep he NOSE ot Siro bony conan scsi on ing mee a We Endocr tn coo oreo non REFERENCESCT it ae Del i ty oe ASR es os ig ae DE «06 ear San Teta Dee 2, Thin ia 3 tow, {i pathy ect Pr, ot Ds Dg Dif ‘io Ha. i Ae SURE MT int Erm pe Ce No PRosLens Sie te er ag nn in of tipi hen fer gn oe wna aA we Dy Rie Een Sacmd ensniOOVR Ua Sk mene ed SELES Teena aap seh ken hen i tc iP or i CHAPTER 2 NUMERICAL METHODS FOR SOLVING THE PARTIAL DIFFERENTIAL EQUATIONS WHICH MODEL THE PHYSICS OF SUBMICRON DEVICES AND PROCESSES Adarbe ince be pc ek mol coe ue ty ag of ‘encour ny we ee (0) eet ave or ae oe apd ‘oc spun dines fmt of fn fon uns cs he uso eqn re ifeson quo) weed the ‘Ronn pyc bored nds oes sat Shem sons of uh elon tt ee ac een wt ‘ant ae ied nse od api Spc th stmeny maa ‘em nas forcing ih ic ces ees Te Si cra ret ep er et) De ‘stant sotonge mi al cane tet nna ce “fren! hie di pe ec ‘tea tse meh Comey of e ie opus ery "Sony il cl et smi ton of et imc sesmme ey ae mery a appeniatne oe oi, owe Pos nt nahn ngs menn tthe sen tos Int se! wen sing ome che nel ny port {he coms tg tat WA tome msl eon eee he ‘eolepecongr ena pcaen eve be Seeaped o ies“hm we pl a egg pos ‘Srnec hyo peo sea a Dap edt sce tpn de eto a ce ‘Ser cra emo ot a es ‘Sit yn i ns et od pn re inn the meted ue stesso of he gts ed oh he pee of mame ait ‘htt mig, comes he comply fe ewrpee rns nd [plencnatn fh pun te ne Sri impart se far fea ‘sis itt vein eee i mamta cme ear wari oeae ep itv own sf ped rae ‘The synergy Between Submiron Devicos & the Capadiliy of Stmutting te Benevio. Te moenea mets wade omtine e ‘here os ant he eg mambo tnt doe aos ‘tert equ hc mania of ew a assy nfo ‘vel a sofware pcg athe th ly (ern the re of ‘even cept (cee epi irl esos Wt rte the cen aie tv () se ie ling st Seton ee ttn: in sna nee mu a he os iene han (int, pope comma espouse fo Frthrcre tae ule be ed ees ra os ‘Sle lg Seal gis ae sem ‘Stain propane ave of nt ois len of he mesg Ul epimers ote pp | SNS pce sty ne ps smy, eny y Fock oc sone tach nr ie fo ate aed pops pn alin Sec si On opin Snide o Oe i he ote ng ean open aa Mowe. Memon Fo SOLING PARAL DSTERENTAL EQUATIONS 1 otras nv ny pnt, ey aoeehemeor a ctciolar carts sae eect eae soe eee eee eset etme aeons tar ae Eneeoncarrieed wesecgs yet iio siemens ace ear ae “Sy ee SCE ogee Scere enetemee aca t oatenanaeamaroman Seecismiermnsss 24 NUMERICAL SOLUTIONS OF DIFFERENTIAL. EQUATIONS nets fatal leben np Aer. ‘iter ena nla Oe ‘aon toh nee gcoe. Fr spi rt wing Sewn ‘Sane pleaser of ay tn) Bawa en an ‘tonnes fering (8 (wh en» ecient cnn S00 1901) =- 04 shat corsa ps (01), te mee (ed y= (Q01- 295,01) =" 0350 hat out poms 18) Tae2 Seis of 208d my nae “Te sie mnt poste se, asi We ee ion crit in pig is min ‘tl cit sinlar meses pcs eo eth FOES ote 2.2 NUMERICAL METHODS FOR SOLVING NONLINEAR PARTIAL DIFFERENTIAL EQUATIONS sowronorr=a-pmtan ER. MEO05 Fo So PARAL DSPERENTL QUATENS 32 SUT vcs sinc cae pa 9th ee Sirsa crn te nny ae Tea ‘Stn tna dices ps a exis! by certo procere The ‘ile coping vos ete andy at bn uaagy da oes rete hts, Ae hers ‘Sicnon pein snl aon ay, er ones es “Th rca pe vg mona POEs ame sr a {as apoptiepi rh evic domin md cntieton psd, ELNSPSomin el up issue Lge name fete ‘lone ts Fett eee he ie ne fre Sit nga eb ko sey 2.7 ioe en ners in mate pon ‘c paenoh iten reach plier ep, {ems sible frconpaer onlin ose be iio 25 inn 1 i i st ns fr ya ia Arts bela rene be hee ae 1 Te fn salon ofthe PDE tof he i an aly Fortin tart ent emo ‘Tatas te clr sa srg cha ene i me et23. GRID GENERATION AND REFINEMENT PROCEDURES “hai ono PD overt comin ihe he ope ‘edorcs game) nas Ss os ene now some of deca ‘Shona oa be amalnagh nly sere pein {Sige stant soe cmb ey else oe Sh oman thee ‘igen dan ess ply cet SiGe ie oye ar, eat iene ta ens Te To an ao a ‘Sith teeter tte ot te ne ro - ‘cht fe POEs sup NK = 2 apd WY = 90 we sk ‘ho fi nd ow cI oe broads yer esas ‘Stn wt tebe Figo 22 shows er inte iflertce math ‘Sheep vera norton cam Are hl ep ping ‘nba nn een nthe nd pest ifr se tn Sanna hie ne om, ‘einige To tlsows per apprninaed neckOe slmert "Sha snus raping acto sly on trp pom “van sow aponinaons ng nue tie er pacing Cr Sat cnpenton me omsary oe Bee he any af be Soiree hci saon pe formes ne 1 32.6 lo, ing, 29 ae ce te i die md my pi ean tt ch ‘oqo nse Nuns Mons 2 SoG PATA DUVERETAL OU TINS 35 peniereminanee metas nena inierehenieraeeeataioermynecc ieee eerie alg feces tarnac enema neaieieteerpegeectoe Zaha cmarmeeyam ams [Benen gars many pou ores. yng ate ge pcg Seca Gace caer Rugs tomnch neater staari Eeireeieneoe orient rare ee Pere te tly ier thnoe a menace eee eet El mnarncsememener tas Sogn oetteet nsec nes gc ne pat a eS 4 Hes hw ‘beanie y jing te mina sds, Those ables mayne be ‘tr ened. pore he meh ob find ns he opto agente esta mao re Sey nai an se ep oes ‘Ronco wot cul on ry fd sigs monn es ‘rte “nen esto oie 3 ip in ‘3D pons by replant 2D mel oe hed dimeson. Thm, te hD a