7 Inter-component Transitions for

Ultra-bandwidth Integrations
7 Inter-compone nt Tra nsitions for Ultra-bandwidth Silico n

Abstract. In this Chapter, the planar and multi-level transitions between different
transmission lines are considered. Among them are the ones realized using the via-
holes, the EM coupling or combinations of both means. The most attention is paid
to the millimeter-wave or ultra-wide bandwidth solutions for silicon technology.
An EM theory of grounding via-holes for millimeter-wave packages is considered.
Contemporary state of modeling of multilayer motherboards shorted by multiple
through-via-holes is reviewed as well. References -104. Figures -16. Pages -34.

Contemporary technology, which allows for the planar and 3-D components em-
bedded into a multilayered environment, is friendly to realize the principle of op-
timality of electronic system components [1]-[6]. It means that the transmission
lines, used in these circuits, are adapted to each component to achieve its best cha-
racteristics, and the reflection-less transitions from one circuit to another are re-
quired. Additionally, these transitions can filter the signals, connect different sig-
nal layers in a 3-D module, cancel or provide the DC coupling, etc. The transitions
are used for narrow- and ultra-wide bandwidth intra- and inter-chip communica-
tions, and they are the ones of the most important components of contemporary
micro-, millimeter-wave, and high-speed electronics [7]-[9].
A large amount of work on the design of transitions was performed during the
developments of the microwave hybrid 3-D integrated circuits, and these transi-
tions can be re-scaled for millimeter-wave monolithic applications.
As an example, some of these transitions are shown in Fig. 7.1 [1],[4]-[6]. The
elements of them are placed on different layers, and additionally to the matching
the lines’ characteristic impedances and fields, these transitions are for the EM
connections of different layers and for the power distribution between the circuit’s
branches. To match the transition’s lines, the open or short-end stubs are used.
More information on the designs and their characteristics is from the above-cited
publications.
The transitions are divided into two large classes. The first of them provide the
DC and microwave connections, and they can be used in microwave and high-
speed digital electronics. Others realize only the EM connections.

G.A. Kouzaev: Applications of Advanced Electromagnetics, LNEE 169, pp. 307–340.

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308 7 Inter-component Transitions for Ultra-bandwidth Integrations

Fig. 7.1 Three-dimensional T-joints for inter-layer EM transitions. (a)- Microstrip-antipodal

slot transmission line joint; (b)- Microstrip-slot line joint; (c)- Microstrip-CPW via-hole
joint; (d)- Microstrip-microstrip power distribution tree; (e)- Slot-microstrip tree; (f)- Slot-
microstrip tree; (g)- Slot-antipodal slot joint; (h)- Slot-microstrip joint; (i)- CPW-antipodal
slot joint

The mentioned components can be of the planar, quasi-planar, or 3-D design

depending on the needs. The most developed theory is known for the transitions of
transmission lines of the same geometry but of different characteristic imped-
ances. Their design solutions are close to the filters, and many matching circuits
are known with the formulas for their synthesis. The most increased bandwidth so-
lutions are provided by continuous transitions and circuits based on resistive net-
works. Some examples of these transitions are shown in Fig. 7.2.