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IKD03N60RF
IKD03N60RF
IKD03N60RF
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
IKD03N60RF
TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz
Datasheet
IndustrialPowerControl
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
Features: C
TRENCHSTOPTMReverseConducting(RC)technologyfor600V
applicationsoffering
•OptimizedEon,EoffandQrrforlowswitchinglosses
•Operatingrangeof4to30kHz G
•SmoothswitchingperformanceleadingtolowEMIlevels E
•Verytightparameterdistribution
•Maximumjunctiontemperature175°C
•Shortcircuitcapabilityof5µs C
•Bestinclasscurrentversuspackagesizeperformance
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant(soldertemperature
260°C,MSL1)
CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications: G
E
Domesticandindustrialdrives:
•Compressors
•Pumps
•Fans
KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKD03N60RF 600V 2.5A 2.2V 175°C K03R60F PG-TO252-3
TRENCHSTOPTMRC-DrivesFastSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Datasheet 3 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,1)
Rth(j-c) - - 2.80 K/W
junction - case
Diode thermal resistance,2)
Rth(j-c) - - 6.80 K/W
junction - case
Thermal resistance, min. footprint
Rth(j-a) - - 75 K/W
junction - ambient
Thermal resistance, 6cm² Cu on
PCB Rth(j-a) - - 50 K/W
junction - ambient
1)
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2)
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
Datasheet 4 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V
VGE=15.0V,IC=2.5A
Collector-emitter saturation voltage VCEsat Tvj=25°C - 2.20 2.50 V
Tvj=175°C - 2.30 -
VGE=0V,IF=2.5A
Diode forward voltage VF Tvj=25°C - 2.10 2.40 V
Tvj=175°C - 2.00 -
Gate-emitter threshold voltage VGE(th) IC=0.05mA,VCE=VGE 4.3 5.0 5.7 V
VCE=600V,VGE=0V
Zero gate voltage collector current1) ICES Tvj=25°C - - 40 µA
Tvj=175°C - - 1000
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=2.5A - 1.3 - S
Integrated gate resistor rG none Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 200 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 13 - pF
Reverse transfer capacitance Cres - 7 -
VCC=480V,IC=2.5A,
Gate charge QG - 17.1 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 7.0 - nH
case
Short circuit collector current VGE=15.0V,VCC≤400V,
Max. 1000 short circuits IC(SC) tSC≤5µs - - A
23
Time between short circuits: ≥ 1.0s Tvj=25°C
SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 10 - ns
Rise time tr VCC=400V,IC=2.5A, - 8 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=68.0Ω,RG(off)=68.0Ω, - 128 - ns
Fall time tf Lσ=60nH,Cσ=40pF - 93 - ns
Lσ,CσfromFig.E
Turn-on energy Eon - 0.05 - mJ
Turn-off energy Eoff - 0.04 - mJ
Total switching energy Ets - 0.09 - mJ
1)
Not subject to production test - verified by design/characterization
Datasheet 5 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr Tvj=25°C, - 31 - ns
Diode reverse recovery charge Qrr VR=400V, - 0.06 - µC
IF=2.5A,
Diode peak reverse recovery current Irrm diF/dt=470A/µs - 3.8 - A
Diode peak rate of fall of reverse
dirr/dt - -196 - A/µs
recoverycurrentduringtb
SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 9 - ns
Rise time tr VCC=400V,IC=2.5A, - 9 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=68.0Ω,RG(off)=68.0Ω, - 142 - ns
Fall time tf Lσ=60nH,Cσ=40pF - 123 - ns
Lσ,CσfromFig.E
Turn-on energy Eon - 0.08 - mJ
Turn-off energy Eoff - 0.06 - mJ
Total switching energy Ets - 0.14 - mJ
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr Tvj=175°C, - 66 - ns
Diode reverse recovery charge Qrr VR=400V, - 0.19 - µC
IF=2.5A,
Diode peak reverse recovery current Irrm diF/dt=470A/µs - 6.2 - A
Diode peak rate of fall of reverse
dirr/dt - -125 - A/µs
recoverycurrentduringtb
Datasheet 6 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
2.5 10
2.0
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
1.5
not for linear use
Ta=55°C
1
1.0
0.5
0.0 0.1
0.1 1 10 100 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tvj≤175°C;VGE=15V)
(Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V,
VGE=0/15V,RG=68Ω,PCBmounting,6cm2
Cu, Ptot=2,4W)
60 7
6
50
limited by bond wire
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
5
40
30
20
2
10
1
0 0
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tvj≤175°C) (VGE≥15V,Tvj≤175°C)
Datasheet 7 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
9 9
15V 15V
7 7
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
13V 13V
6 11V 6 11V
9V 9V
5 5
7V 7V
4 4
3 3
2 2
1 1
0 0
0 1 2 3 4 0 1 2 3 4
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tvj=25°C) (Tvj=175°C)
9 4.0
Tvj = 25°C IC = 0.6A
Tvj = 175°C IC = 1A
8 3.5 IC = 2.5A
VCEsat,COLLECTOR-EMITTERSATURATION[V]
IC = 5A
7
3.0
IC,COLLECTORCURRENT[A]
6
2.5
5
2.0
4
1.5
3
1.0
2
1 0.5
0 0.0
4 6 8 10 12 14 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=10V) afunctionofjunctiontemperature
(VGE=15V)
Datasheet 8 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
td(off)
tf
td(on)
tr
100
100
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
10 10
1 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 20 30 40 50 60 70 80 90 100 110 120
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistance
(inductiveload,Tvj=175°C,VCE=400V, (inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15V,RGon=68Ω,RGoff=68Ω,dynamic VGE=0/15V,IC=2,5A,dynamictestcircuitin
test circuit in Figure E) Figure E)
7
td(off) typ.
tf min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
td(on) max.
tr
6
100
t,SWITCHINGTIMES[ns]
10
3
1 1
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V, (IC=0,05mA)
IC=2,5A,RGon=68Ω,RGoff=68Ω,dynamictest
circuit in Figure E)
Datasheet 9 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
0.25 0.20
Eoff Eoff
Eon Eon
Ets 0.18 Ets
0.20 0.16
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
0.14
0.15 0.12
0.10
0.10 0.08
0.06
0.05 0.04
0.02
0.00 0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 20 30 40 50 60 70 80 90 100 110 120
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistance
(inductiveload,Tvj=175°C,VCE=400V, (inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15V,RGon=68Ω,RGoff=68Ω,dynamic VGE=0/15V,IC=2,5A,dynamictestcircuitin
test circuit in Figure E) Figure E)
0.16 0.18
Eoff Eoff
Eon Eon
0.14 Ets 0.16 Ets
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
0.14
0.12
0.12
0.10
0.10
0.08
0.08
0.06
0.06
0.04
0.04
0.02 0.02
0.00 0.00
25 50 75 100 125 150 175 200 250 300 350 400 450 500
Tvj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(inductiveload,VCE=400V,VGE=0/15V, (inductiveload,Tvj=175°C,VGE=0/15V,
IC=2,5A,RGon=68Ω,RGoff=68Ω,dynamictest IC=2,5A,RGon=68Ω,RGoff=68Ω,dynamictest
circuit in Figure E) circuit in Figure E)
Datasheet 10 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
18 1000
VCC=120V Cies
VCC=480V Coes
16 Cres
14
VGE,GATE-EMITTERVOLTAGE[V]
12 100
C,CAPACITANCE[pF]
10
6 10
0 1
0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=2,5A) collector-emittervoltage
(VGE=0V,f=1MHz)
50 12
45
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
10
40
35
8
30
25 6
20
4
15
10
2
0 0
12 13 14 15 16 17 18 19 20 10 11 12 13 14 15 16 17 18 19
VGE,GATE-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa Figure 20. Shortcircuitwithstandtimeasafunctionof
functionofgate-emittervoltage gate-emittervoltage
(VCE≤400V,startatTvj=25°C) (VCE≤400V,startatTvj=150°C)
Datasheet 11 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1
D = 0.5 D = 0.5
0.2 1 0.2
0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse single pulse
0.1
0.1
i: 1 2 3 4 5 6 7 i: 1 2 3 4 5 6 7
ri[K/W]: 0.015751 1.14785 1.341315 0.237182 0.041914 6.2E-3 2.2E-3 ri[K/W]: 0.600659 4.018125 1.846211 0.289559 0.043754 6.0E-3 2.1E-3
τi[s]: 1.2E-5 2.3E-4 1.1E-3 6.0E-3 0.047561 0.288161 1.246755 τi[s]: 4.2E-5 1.9E-4 1.1E-3 6.1E-3 0.048469 0.301349 1.300555
0.01 0.01
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedanceasa Figure 22. Diodetransientthermalimpedanceasa
functionofpulsewidth1)(seepage4) functionofpulsewidth2)(seepage4)
(D=tp/T) (D=tp/T)
80 0.20
Tvj = 25°C, IF = 2.5A
Tvj = 175°C, IF = 2.5A
0.18
70
Qrr,REVERSERECOVERYCHARGE[µC]
0.16
trr,REVERSERECOVERYTIME[ns]
60
0.14
Tvj = 25°C, IF = 2.5A
50 Tvj = 175°C, IF = 2.5A
0.12
40 0.10
0.08
30
0.06
20
0.04
10
0.02
0 0.00
400 500 600 700 800 900 1000 400 500 600 700 800 900 1000
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverytimeasafunction Figure 24. Typicalreverserecoverychargeasa
ofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)
Datasheet 12 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
10 0
Tvj = 25°C, IF = 2.5A Tvj = 25°C, IF = 2.5A
Tvj = 175°C, IF = 2.5A Tvj = 175°C, IF = 2.5A
9
dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs]
-100
Irr,REVERSERECOVERYCURRENT[A]
-200
7
6 -300
5
-400
-500
3
2 -600
400 500 600 700 800 900 1000 400 500 600 700 800 900 1000
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 25. Typicalreverserecoverycurrentasa Figure 26. Typicaldiodepeakrateoffallofreverse
functionofdiodecurrentslope recoverycurrentasafunctionofdiode
(VR=400V) currentslope
(VR=400V)
9 2.8
Tvj = 25°C, VGE = 0V
Tvj = 175°C, VGE = 0V
8 2.6
7 2.4 IF = 0.6A
IF = 1A
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
IF = 2.5A
6 2.2 IF = 5A
5 2.0
4 1.8
3 1.6
2 1.4
1 1.2
0 1.0
0 1 2 3 4 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 27. Typicaldiodeforwardcurrentasafunction Figure 28. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature
Datasheet 13 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
DOCUMENT NO.
MILLIMETERS Z8B00003328
DIM
MIN MAX
A 2.16 2.41 SCALE 0
A1 0.00 0.15
b 0.64 0.89 2.5
b2 0.65 1.15
b3 4,95 5.50 0 2.5
c 0.46 0.61 5mm
c2 0.40 0.98
D 5.97 6.22
EUROPEAN PROJECTION
D1 5.02 5.84
E 6.35 6.73
E1 4.32 5.21
e 2.29 (BSC)
e1 4.57 (BSC)
N 3 ISSUE DATE
H 9.40 10.48 05-02-2016
L 1.18 1.78
L3 0.89 1.27 REVISION
L4 0.51 1.02 06
Datasheet 14 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Testing Conditions
VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b
a b
10% VGE
t
IC(t) Qa Qb
dI
90% IC
90% IC
10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)
td(off) tf td(on) tr
t
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure B.
Datasheet 15 V2.6
2016-05-10
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
RevisionHistory
IKD03N60RF
Revision:2016-05-10,Rev.2.6
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2011-06-07 Preliminary Data sheet
2.2 2012-02-23 Final data sheet
2.3 2013-12-10 New value ICES max limit at 175°C
2.4 2014-02-26 Without PB free logo
2.5 2014-03-12 Storage temperature -55...+150°C
2.6 2016-05-10 New maximum values Ic(Tc), IF(Tc) and Figure 4
Datasheet 16 V2.6
2016-05-10
Trademarks
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2018.
AllRightsReserved.
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand
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theproductofInfineonTechnologiesincustomer’sapplications.
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