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California State Polytechnic Univerity, Pomona: Current-Voltage Characteristics of The PN Junction Diode
California State Polytechnic Univerity, Pomona: Current-Voltage Characteristics of The PN Junction Diode
Objective:
Pre-Lab:
Parts List:
Procedure:
1) To study the forward biased portion of the I-V characteristics of the semiconductor diode,
capture the circuit shown in Figure 1.
2) For the circuit in Figure 1, use D1N4001 for the diode,
Starting the supply (Vs) at 0V, increase to 1V in steps of 0.2V then increase from 1V to
10V in steps of 1V.
For each value of Vs, run PSpice simulation and record the voltage drop across the diode
(Vd) and the current through the diode (Id) to complete a table.
4) To study the reverse biased portion of the I-V characteristics of the semiconductor diode,
capture the circuit shown in Figure 2, use D1N4001.
Starting the supply (Vs) at 0V, gradually increase to 10V in steps of 1V. For each value of
Vs, run PSpice simulation to record the voltage drop across the diode and the current
through the diode and complete a table.
Vd
1Κ
Ω
Id Id 10
0ΚΩ
Vs Vd Vs or
Ω ( scope)
1Μ
Figure 1 Figure 2
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CALIFORNIA STATE POLYTECHNIC UNIVERITY, POMONA
Electrical and Computer Engineering Department
Data Analysis:
Plot forward and reverse Id vs. Vd from the data obtained from your measurements/simulations for
both diodes.
Post Lab:
1) From the data, calculate and tabulate the reverse saturation current Is and the turn-on
voltage Von for both diodes.
2) From the collected data, determine the type of the PN Junction diode (Si or Ge?).
3) From the data, calculate and tabulate the ideality factor η for each diode.
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