TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3

APT75GT120JRDQ3
1200V

E E
Thunderbolt IGBT® 7
G C - 22
The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch S OT
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
switching speed. "UL Recognized"
file # E145592
IS OT OP ®
• Low Forward Voltage Drop • High Freq. Switching to 20KHz

• Low Tail Current • Ultra Low Leakage Current

C
• RBSOA and SCSOA Rated
G
E

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT75GT120JRDQ3 UNIT

VCES Collector-Emitter Voltage 1200

Volts
VGE Gate-Emitter Voltage ±30
I C1 Continuous Collector Current @ TC = 25°C 97
I C2 Continuous Collector Current @ TC = 110°C 42 Amps
1
I CM Pulsed Collector Current @ TC = 150°C 225
SSOA Switching Safe Operating Area @ TJ = 150°C 225
PD Total Power Dissipation 480 Watts
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX Units

V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 1200

VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 3mA, Tj = 25°C) 4.5 5.5 6.5
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) 2.7 3.2 3.7
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) 3.9
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 200
I CES μA
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2000
I GES Gate-Emitter Leakage Current (VGE = ±20V) 480 nA
052-6276 Rev F 3-2012

RG(int) Intergrated Gate Resistor 5 Ω

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

 DYNAMIC CHARACTERISTICS APT75GT120JRDQ3

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

Cies Input Capacitance Capacitance 5100
Coes Output Capacitance VGE = 0V, VCE = 25V 720 pF
Cres Reverse Transfer Capacitance f = 1 MHz 380
VGEP Gate-to-Emitter Plateau Voltage Gate Charge 10 V
Qg 3 VGE = 15V
Total Gate Charge 500
Qge Gate-Emitter Charge VCE = 600V 32 nC
Qgc Gate-Collector ("Miller ") Charge I C = 75A 516
TJ = 150°C, R G = 4.3Ω, VGE =
SSOA Switching Safe Operating Area 225 A
15V, L = 100μH,VCE = 1200V
td(on) Turn-on Delay Time Inductive Switching (25°C) 50
tr Current Rise Time VCC = 800V 65
VGE = 15V
ns
td(off ) Turn-off Delay Time 375
tf I C = 75A
Current Fall Time 25
4 RG = 1.0Ω
Eon1 Turn-on Switching Energy 8045
5
TJ = +25°C
Eon2 Turn-on Switching Energy (Diode) 8845 μJ
Eoff Turn-off Switching Energy 6
2970
td(on) Turn-on Delay Time Inductive Switching (125°C) 50
tr Current Rise Time VCC = 800V 65
ns
td(off ) Turn-off Delay Time VGE = 15V 415
tf I C = 75A
Current Fall Time 29
44 RG = 1.0Ω
Eon1 Turn-on Switching Energy 8050
55
TJ = +125°C
Eon2 Turn-on Switching Energy (Diode) 12660 μJ
Eoff 66
Turn-off Switching Energy 4215

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case (IGBT) .26
°C/W
RθJC Junction to Case (DIODE) .56
WT Package Weight 29.2 gm

VIsolation RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 Volts

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
052-6276 Rev F 3-2012

Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3
200 140
V
GE
= 15V 15V
180
120
160 13V
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

140 100
TC = 25°C
120 12V
TC = 125°C 80
100
60 11V
80

60 40 10V
40
20 9V
20
8V
7V
0 0
0 1 2 3 4 5 6 7 0 5 10 15 20
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V) FIGURE 2, Output Characteristics (TJ = 125°C)
200 18
250μs PULSE I = 75A
TEST<0.5 % DUTY
TJ = -55°C C
T = 25°C
180 CYCLE 16 J
VCE = 240V

VGE, GATE-TO-EMITTER VOLTAGE (V)

160 14
IC, COLLECTOR CURRENT (A)

VCE = 600V
140 12
120
10
100 VCE = 960V
8
80
TJ = 25°C 6
60
TJ = 125°C 4
40

20 2

0 0
0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
8.0 6
TJ = 25°C.
250μs PULSE TEST
IC = 150A IC = 150A
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

7.0 <0.5 % DUTY CYCLE

5
6.0
4
5.0 IC = 75A
IC = 75A
4.0 3

IC = 37.5A IC = 37.5A
3.0
2
2.0
1
1.0 VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0 0
8 10 12 14 16 0 25 50 75 100 125 150
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
1.10 140

1.05 120
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE

1.00 100
(NORMALIZED)

0.95 80

0.90 60

0.85 40
052-6276 Rev F 3-2012

0.80 20

0.75 0
-50 0 -25
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
 APT75GT120JRDQ3
60 500

td (OFF), TURN-OFF DELAY TIME (ns)

50
td(ON), TURN-ON DELAY TIME (ns) 400
VGE = 15V
40 VGE =15V,TJ=25°C
300
VGE =15V,TJ=125°C
30
200
20

VCE = 400V 100

10 T = 25°C, or 125°C VCE = 400V
J
RG = 1.0Ω RG = 1.0Ω
L = 100μH L = 100μH
0 0
10 40 70 100 130 160 10 40 70 100 130 160
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
160 70
RG = 1.0Ω, L = 100μH, VCE = 800V RG = 1.0Ω, L = 100μH, VCE = 800V

140 60

120
50

tf, FALL TIME (ns)

tr, RISE TIME (ns)

100
40 TJ = 125°C, VGE = 15V

80
30
60
20
40 TJ = 25°C, VGE = 15V
TJ = 25 or 125°C,VGE = 15V
20 10

0 0
10 40 70 100 130 160 10 40 70 100 130 160
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
50000 10000
V = 800V V = 800V
CE CE
V = +15V V = +15V
GE GE
R = 1.0Ω R = 1.0Ω
G G
EOFF, TURN OFF ENERGY LOSS (μJ)
EON2, TURN ON ENERGY LOSS (μJ)

40000 8000
TJ = 125°C
TJ = 125°C
30000 6000

20000 4000

10000 2000
TJ = 25°C
TJ = 25°C
0 0
10 40 70 100 130 160 10 40 70 100 130 160
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
100000 45000
V = 800V V = 800V
CE CE
V = +15V V = +15V
Eon2,150A
GE 40000 GE
T = 125°C R = 1.0Ω
J G
SWITCHING ENERGY LOSSES (μJ)

SWITCHING ENERGY LOSSES (μJ)

80000 35000

Eon2,150A 30000
60000
25000

20000
40000 Eoff,150A
15000
Eon2,75A
052-6276 Rev F 3-2012

Eon2,75A 10000 Eoff,150A

20000
Eoff,75A Eon2,37.5A
Eon2,37.5A 5000
Eoff,75A
Eoff,37.5A Eoff,37.5A
0 0
0 10 20 30 40 50 0 25 50 75 100 125
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3
4,000 250
Cies

IC, COLLECTOR CURRENT (A)

200

1,000
C, CAPACITANCE ( F)

150
P

500
100

Coes
50

Cres
100 0
0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area

0.30

0.25 D = 0.9
ZθJC, THERMAL IMPEDANCE (°C/W)

0.20
0.7

0.15
0.5
Note:

P DM
0.10 t1
0.3
t2

0.05 t
0.1 SINGLE PULSE Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.05
0
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

50
FMAX, OPERATING FREQUENCY (kHz)

F max = min (f max, f max2)

0.05
10 f max1 =
t d(on) + tr + td(off) + tf
5 Pdiss - P cond
T = 125°C f max2 =
J E on2 + E off
T = 75°C
C
D = 50 % TJ - T C
V = 400V
CE Pdiss =
R = 5Ω
G
R θJC
3
15 25 35 45 55 65 75
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
052-6276 Rev F 3-2012
 APT75GT120JRDQ3

Gate Voltage
APT60DQ120 10%
TJ = 125°C

td(on)

V CC IC V CE
tr
Collector Current

90% 5%
5% 10%
A CollectorVoltage

D.U.T.
Switching Energy

Figure 21, Inductive Switching Test Circui t

Figure 22, Turn-on Switching Waveforms and Definitions

90%

Gate Voltage
TJ = 125°C

td(off )

CollectorVoltage

90%

tf
10% 0
Collector Current

Switching Energy

Figure 23, Turn-off Switching Waveforms and Definitions

052-6276 Rev F 3-2012
TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3

ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions APT75GN120JRDQ3 UNIT
IF(AV) Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5) 60
IF(RMS) RMS Forward Current (Square wave, 50% duty) 73 Amps
IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 540
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IF = 75A 2.8
VF Forward Voltage IF = 150A 3.48 Volts
IF = 75A, TJ = 125°C 2.17
DYNAMIC CHARACTERISTICS
Symbol Characteristic Test Conditions MIN TYP MAX- UNIT

trr Reverse Recovery Time IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C - 60

ns
trr Reverse Recovery Time - 265
IF = 60A, diF/dt = -200A/μs
Qrr Reverse Recovery Charge - 560 nC
VR = 800V, TC = 25°C
IRRM Maximum Reverse Recovery Current - 5 - Amps
trr Reverse Recovery Time - 350 ns
IF = 60A, diF/dt = -200A/μs
Qrr Reverse Recovery Charge - 2890 nC
VR = 800V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 13 - Amps
trr Reverse Recovery Time - 150 ns
IF = 60A, diF/dt = -1000A/μs
Qrr Reverse Recovery Charge - 4720 - nC
VR = 800V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 40 Amps

0.60

D = 0.9
0.50
ZθJC, THERMAL IMPEDANCE (°C/W)

0.40 0.7

0.30 0.5
Note:
P DM

t1
0.20 0.3
t2

0.10 t
0.1 Duty Factor D = 1 /t2
SINGLE PULSE Peak T J = P DM x Z θJC + T C
0.05
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6276 Rev F 3-2012
 APT75GT120JRDQ3
200 400
T = 125°C
J
120A V = 800V
180 R
350

trr, REVERSE RECOVERY TIME

IF, FORWARD CURRENT 160
300
140 60A
TJ = 175°C
250
120

(ns)
(A)

30A
100 200
TJ = 125°C
80 150
60
TJ = 25°C 100
40
TJ = -55°C
50
20
0 0
0 1 2 3 4 0 200 400 600 800 1000 1200
VF, ANODE-TO-CATHODE VOLTAGE (V) -diF /dt, CURRENT RATE OF CHANGE(A/μs)
Figure 25. Forward Current vs. Forward Voltage Figure 26. Reverse Recovery Time vs. Current Rate of Change
7000 50
T = 125°C T = 125°C
J 120A
V = 800V J
R 45 V = 800V

IRRM, REVERSE RECOVERY CURRENT

R
6000
Qrr, REVERSE RECOVERY CHARGE

120A 40
5000 35

30
4000
(nC)

(A)
60A
25
3000 60A
20
30A 15
2000
30A
10
1000
5
0 0
200 400 6000 800 1000 1200 0 200 400 600 800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/μs) -diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change Figure 28. Reverse Recovery Current vs. Current Rate of Change
1.2 90
Qrr Duty cycle = 0.5
trr T = 175°C
80 J

1.0
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)

70
trr
0.8 60
IF(AV) (A)

IRRM 50
0.6
40

0.4 30
Qrr
20
0.2
10

0.0 0
25 0
50 75 100 125 150 25 50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature Figure 30. Maximum Average Forward Current vs. CaseTemperature
350

300
CJ, JUNCTION CAPACITANCE

250

200
(pF)

150

100
052-6276 Rev F 3-2012

50

0
1 10 100 200
VR, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3
Vr

+18V diF /dt Adjus t

APT10035LLL

0V
D.U.T.
30μH trr/Q rr
Wavefor m

PEARSON 2878
CURRENT
TRANSFORMER

Figure 32. Diode Test Circui t

1 I F - Forward Conduction Current

1 4
2 diF /dt - Rate of Diode Current Change Through Zero Crossing.
Zer o
3 I RRM - Maximum Reverse Recovery Current .
5 0.25 I RRM
4 trr - Revers e R ecovery Time, measured from zero crossing wher e diode 3
current goes from positive to negative, to the point at which the straight 2
line through I RRM and 0.25 I RRM passes through zero .

5 Q rr - Area Under the Curve Defined by I RRM and trr.

Figure 33, Diode Reverse Recovery Waveform and Definitions

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M 4
H=4.8 (.187) (4 places )
H=4.9 (.193)
(4 places)

25.2 (0.992)
r = 4.0 (.157) 25.4 (1.000)
(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)

3.3 (.129) 1.95 (.077)

3.6 (.143) 2.14 (.084)
14.9 (.587) * Emitter/Anode Collector/Cathode
15.1 (.594)
30.1 (1.185) * Emitter/Anode terminals ar e
30.3 (1.193) shorted internally. Current
38.0 (1.496) handling capability is equal
38.2 (1.504) for either Emitter/Anode terminal .
052-6276 Rev F 3-2012

* Emitter/Anode Gate
Dimensions in Millimeters and (Inches )