FDD4141 P-Channel PowerTrench® MOSFET

April 2015

FDD4141
P-Channel PowerTrench® MOSFET
-40V, -50A, 12.3mΩ
Features General Description
„ Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
„ Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
deliver low rDS(on) and optimized Bvdss capability to offer
„ High performance trench technology for extremely low rDS(on) superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
„ RoHS Compliant
losses in converter/inverter applications.

Applications
„ Inverter
„ Power Supplies

D G
G

S
D
TO-PA K
-2 52
(TO -252) D

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage -40 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C -50
-Continuous (Silicon limited) TC = 25°C -58
ID A
-Continuous TA = 25°C (Note 1a) -10.8
-Pulsed -100
EAS Single Pulse Avalanche Energy (Note 3) 337 mJ
Power Dissipation TC = 25°C 69
PD W
Power Dissipation TA = 25°C (Note 1a) 2.4
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 1.8
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 52

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDD4141 FDD4141 D-PAK (TO-252) 13’’ 16mm 2500 units

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDD4141 Rev.1.2
 FDD4141 P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 V
∆BVDSS Breakdown Voltage Temperature
ID = -250µA, referenced to 25°C -29 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = -32V, VGS = 0V -1 µA
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -1.8 -3 V
∆VGS(th) Gate to Source Threshold Voltage
ID = -250µA, referenced to 25°C 5.8 mV/°C
∆TJ Temperature Coefficient
VGS = -10V, ID = -12.7A 10.1 12.3
VGS = -4.5V, ID = -10.4A 14.5 18.0
rDS(on) Static Drain to Source On Resistance mΩ
VGS = -10V, ID = -12.7A,
15.3 18.7
TJ = 125°C
gFS Forward Transconductance VDS = -5V, ID = -12.7A 38 S

Dynamic Characteristics
Ciss Input Capacitance 2085 2775 pF
VDS = -20V, VGS = 0V,
Coss Output Capacitance 360 480 pF
f = 1MHz
Crss Reverse Transfer Capacitance 210 310 pF
Rg Gate Resistance f = 1MHz 4.6 Ω

Switching Characteristics
td(on) Turn-On Delay Time 10 19 ns
tr Rise Time VDD = -20V, ID = -12.7A, 7 13 ns
VGS = -10V, RGEN = 6Ω
td(off) Turn-Off Delay Time 38 60 ns
tf Fall Time 15 27 ns
Qg Total Gate Charge VGS = 0V to -10V 36 50 nC
Qg Total Gate Charge VGS = 0V to -5V VDD = -20V, 19 27 nC
ID = -12.7A
Qgs Gate to Source Charge 7 nC
Qgd Gate to Drain “Miller” Charge 8 nC

Drain-Source Diode Characteristics

VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -12.7A (Note 2) -0.8 -1.2 V
trr Reverse Recovery Time 29 44 ns
IF = -12.7A, di/dt = 100A/µs
Qrr Reverse Recovery Charge 26 40 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.

a) 52°C/W when mounted on a b) 100°C/W when mounted

1 in2 pad of 2 oz copper on a minimum pad.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V.

©2007 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDD4141 Rev.1.2
 FDD4141 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

100 4.0
PULSE DURATION = 80µs

DRAIN TO SOURCE ON-RESISTANCE

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX 3.5 DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)

VGS = -3V
80
VGS = -4.5V 3.0
VGS = -4V VGS = -3.5V

NORMALIZED
60 2.5
VGS = -10V
2.0 VGS = -4V
40
VGS = -3.5V
1.5 VGS = -4.5V
20
1.0
VGS = -3V VGS = -10V
0 0.5
0 1 2 3 4 5 0 20 40 60 80 100
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.8 55
DRAIN TO SOURCE ON-RESISTANCE

ID = -12.7A PULSE DURATION = 80µs

ID = -12.7A

SOURCE ON-RESISTANCE (mΩ)

1.6 VGS = -10V DUTY CYCLE = 0.5%MAX
45

1.4
rDS(on), DRAIN TO
NORMALIZED

35
1.2
25
1.0
TJ = 125oC

0.8 15

TJ = 25oC
0.6 5
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to
vs Junction Temperature Source Voltage

100 100
PULSE DURATION = 80µs VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)

DUTY CYCLE = 0.5%MAX

80 10
-ID, DRAIN CURRENT (A)

VDS = -5V
TJ = 150oC
60 1

TJ = 25oC
40 0.1

TJ = 150oC
20 0.01
TJ = 25oC TJ = -55oC
TJ = -55oC
0 1E-3
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

©2007 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDD4141 Rev.1.2
 FDD4141 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

10 10000
-VGS, GATE TO SOURCE VOLTAGE(V)

ID = -12.7A

8
Ciss

CAPACITANCE (pF)
VDD = -15V
6
VDD = -20V
1000
VDD = -10V
Coss
4

2 f = 1MHz
VGS = 0V Crss

0 100
0 8 16 24 32 40 0.1 1 10 40
Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

30 60
-IAS, AVALANCHE CURRENT(A)

50

10 -ID, DRAIN CURRENT (A)

40
VGS = -4.5V VGS = -10V
30
TJ = 125oC TJ = 25oC Limited by Package

20

10
o
RθJC = 1.8 C/W
1 0
0.01 0.1 1 10 100 1000 25 50 75 100 125 150
o
tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Case Temperature

200 10000
100 VGS = -10V
P(PK), PEAK TRANSIENT POWER (W)

FOR TEMPERATURES
o
ABOVE 25SINGLE
C DERATE PEAK
PULSE
-ID, DRAIN CURRENT (A)

100us CURRENTRAS FOLLOWS:

= 1.8 C/W
o
θ JC
150 – T
C
------------------------
10 I = I25
1000 125

THIS AREA IS 1ms

LIMITED BY rDS(on) TC = 25oC
10ms
1 SINGLE PULSE
TJ = MAX RATED DC
RθJC = 1.8oC/W 100
TC = 25oC
0.1 50
-5 -4 -3 -2 -1 0 1 2 3
0.1 1 10 100 10 10 10 10 10 10 10 10 10
-VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

©2007 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDD4141 Rev.1.2
 FDD4141 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

1 DUTY CYCLE-DESCENDING ORDER

D = 0.5
NORMALIZED THERMAL

0.2
IMPEDANCE, ZθJC

0.1
0.05
PDM
0.1 0.02
0.01
t1
t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
0.01 o PEAK TJ = PDM x ZθJC x RθJC + TC
RθJC = 1.8 C/W
0.005
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

©2007 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDD4141 Rev.1.2
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Rev. I77

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