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Complete DDR Memory Power Supply Controller: General Description
Complete DDR Memory Power Supply Controller: General Description
RT8248A
The 1.5A sink/source LDO maintains fast transient LDO Input Available to Optimize Power Losses
response only requiring a 10μF ceramic output capacitor. Requires Only 10μμF Ceramic Output Capacitor
In addition, the LDO supply input is available externally Integrated Divider Tracks 1/2 VDDQ for both VTT
high-Z in S3 and discharging VDDQ, VTT and VTTREF Supports High-Z in S3 and Soft-Off in S4/S5
(soft-off) in S4/S5.
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UGATE
PHASE
TON
PGOOD
WQFN-20L 3x3
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TRIG
VDDQ On-Time BOOT
TON 1-SHOT R
Comp
VREF +
+
- S Q UGATE
PHASE
Latch Min. TOFF
+ OV S1 Q TRIG VDD
115%VREF -
Latch LGATE
FB + UV S1 Q
0.45V - PGND
- DEM
85% VREF +
+ 5µA
SS Int Thermal
SS Timer
Shutdown - 1/10 CS
S5 Reference
Voltage VREF
Selector
VTT LDO
VDDQ
S5
Non-Tracking Thermal VTTREF
Discharge Shutdown
S3 VLDOIN
+
-
+
-
GND +
VTT
-
+
VTTSNS
-
VTTGND
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Copyright © 2019 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
DC ----------------------------------------------------------------------------------------------------------------------------- −0.3V to 6V
< 20ns ----------------------------------------------------------------------------------------------------------------------- −2.5V to 7.5V
UGATE to PHASE
DC ----------------------------------------------------------------------------------------------------------------------------- −0.3V to 6V
< 20ns ----------------------------------------------------------------------------------------------------------------------- −5V to 7.5V
VDD, CS, S3, S5, VTTSNS, VDDQ, VID, VTTREF, VTT, VLDOIN, FB, PGOOD to GND ---------------- −0.3V to 6V
PGND, VTTGND to GND ------------------------------------------------------------------------------------------------- −0.3V to 0.3V
Other Pins ------------------------------------------------------------------------------------------------------------------- −0.3V to 6.5V
Power Dissipation, PD @ TA = 25°C
Electrical Characteristics
(VDD = 5V, VIN = 12V, RTON = 620kΩ, TA = 25°C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
PWM Controller
FB forced above the regulation point,
Quiescent Supply Current -- 135 -- A
VS5 = 5V, VS3 = 0V, not switching
TON Operating Current RTON = 620k, VIN = 12V -- 19 -- A
IVLDOIN BIAS Current VS5 = VS3 = 5V, VTT = no load -- 1 -- A
IVLDOIN Standby Current VS5 = 5V, VS3 = 0, VTT = no load -- 0.1 10 A
Copyright © 2019 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
Copyright © 2019 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
Copyright © 2019 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
R3 VIN
(Optional) RT8248A 620k
12 VDD 9
VVDD TON
C1 C3
R1 1µF 17 10µF x 2
UGATE Q1
100k R4 886N03LS
PGOOD 10 PGOOD 18 0
BOOT L1
VTT 20 VTT C4 1µH
16 0.1µF VVDDQ
0.675V C2 PHASE
10µF 2 1.35V
R2 VTTSNS 15
270k LGATE R7 C5
13 CS Q2
R5 22µF x 4
886N03LS C7 C8
16k C9
VTT Control
7 S3 FB 6
8 S5
VDDQ Control VTTREF 4 R6
20k
1 5 C6
VTTGND VDDQ 33nF
14 19
PGND VLDOIN
3,
21 (Exposed Pad)
GND VID 11 Low
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Switching Frequency vs. Load Current Switching Frequency vs. Load Current
500 500
DDR3L, VIN = 19V, VDDQ = 1.35V, DDR4, VIN = 7.4V, VDDQ = 1.2V,
450 450
Switching Frequency (kHz)1
400 400
350 350
300 300
250 250
200 200
150 150
100 100
50 50
0 0
0.01 0.1 1 10 0.01 0.1 1 10
Load Current (A) Load Current(A)
Switching Frequency vs. Load Current Switching Frequency vs. Load Current
500 500
DDR4, VIN = 12V, VDDQ = 1.2V, DDR4, VIN = 19V, VDDQ = 1.2V,
450 S3 = GND, S5 = 5V, RTON = 620kΩ 450
Switching Frequency (kHz)1
Switching Frequency (kHz)1
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Efficiency (%)
60 60
50 50
40 40
30 30
20 20
10 10
DDR3L, VIN = 7.4V, VDDQ = 1.35V, S3 = S5 = 5V DDR3L, VIN = 12V, VDDQ = 1.35V, S3 = S5 = 5V
0 0
0.001 0.010 0.100 1.000 10.000 0.001 0.010 0.100 1.000 10.000
Load Current (A) Load Current (A)
Efficiency (%)
60 60
50 50
40 40
30 30
20 20
10 10
DDR3L, VIN = 19V, VDDQ = 1.35V, S3 = S5 = 5V DDR4, VIN = 7.4V, VDDQ = 1.2V, S3 = S5 = 5V
0 0
0.001 0.010 0.100 1.000 10.000 0.001 0.010 0.100 1.000 10.000
Load Current (A) Load Current (A)
60 60
50 50
40 40
30 30
20 20
10 10
DDR4, VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V DDR4, VIN = 19V, VDDQ = 1.2V, S3 = S5 = 5V
0 0
0.001 0.010 0.100 1.000 10.000 0.001 0.010 0.100 1.000 10.000
Load Current (A) Load Current (A)
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VDDQ Output Voltage vs. Load Current VDDQ Output Voltage vs. Load Current
1.40 1.25
1.39 1.24
1.38 1.23
Output Voltage (V)
VTT Output Voltage vs. Load Current VTT Output Voltage vs. Load Current
0.700 0.625
0.695 0.620
0.690 0.615
Output Voltage (V)
0.685 0.610
0.680 0.605
0.675 0.600
0.670 0.595
0.665 0.590
0.660 0.585
0.655 0.580
DDR3L, VIN = 12V, VTT = 0.675V, S3 = S5 = 5V DDR4, VIN = 12V, VTT = 0.6V, S3 = S5 = 5V
0.650 0.575
-1.5 -1.2 -0.9 -0.6 -0.3 0 0.3 0.6 0.9 1.2 1.5 -1.5 -1.2 -0.9 -0.6 -0.3 0 0.3 0.6 0.9 1.2 1.5
Load Current (A) Load Current (A)
Quiescent Current vs. Input Voltage Shutdown Current vs. Input Voltage
150 1.0
148 0.9
Quiescent Current (µA)
146 0.8
Shutdown Current (µA)
144 0.7
142 0.6
140 0.5
138 0.4
136 0.3
134 0.2
132 0.1
No Switching, S3 = GND, S5 = 5V S3 = S5 = GND
130 0.0
4 6 8 10 12 14 16 18 20 22 24 26 4 6 8 10 12 14 16 18 20 22 24 26
Input Voltage (V) Input Voltage (V)
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1.22 0.610
VDDQ VDDQ
(1V/Div) (1V/Div)
VTT VTT
(1V/Div) (1V/Div)
S5 PHASE
(5V/Div) (10V/Div)
PGOOD
(5V/Div)
PGOOD
(5V/Div)
No Load, VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V, ILoad = 10A
VDDQ
(50mV/Div)
VDDQ
(1V/Div)
UGATE VTT
(20V/Div) (1V/Div)
LGATE VTTREF
(5V/Div) (1V/Div)
DDR4, VIN = 12V
IL S5
(10A/Div) (5V/Div)
VDDQ = 1.2V, S3 = S5 = 5V, ILoad = 0.1A to 10A No Load, VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V
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VDDQ
(1V/Div)
PHASE
(5V/Div)
LGATE
(5V/Div)
PGOOD
(5V/Div)
No Load, VIN = 12V, VDDQ = 1.2V, S3 = S5 = 5V
Time (40μs/Div)
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ILOAD = IPEAK / 2
The RT8248A provides cycle-by-cycle current limit control.
The current limit circuit employs a unique “valley” current
sensing algorithm. If the magnitude of the current sense
t signal at PHASE is above the current limit threshold, the
0 tON
PWM is not allowed to initiate a new cycle (Figure 4).
Figure 3. Boundary Condition of CCM/DCM The actual peak current is greater than the current limit
The switching waveforms may appear noisy and threshold by an amount equal to the inductor ripple current.
asynchronous when light load causes diode-emulation Therefore, the exact current limit characteristic and
operation, but this is a normal operating condition that maximum load capability are a function of the sense
results in high light load efficiency. Trade offs in DEM resistance, inductor value, battery and output voltage.
noise vs. light load efficiency is made by varying the IL
inductor value. Generally, low inductor values produce a
IPEAK
broader efficiency vs. load curve, while higher values result
in higher full load efficiency (assuming that the coil ILOAD
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Copyright © 2019 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
Copyright © 2019 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
Output Management by S3, S5 Control where LIR is the ratio of the peak-to-peak ripple current to
the maximum average inductor current.
In DDR2/DDR3 memory applications, it is important to
always keep VDDQ higher than VTT/VTTREF, even during Find a low loss inductor having the lowest possible DC
start-up and shutdown. The RT8248A provides this resistance that fits in the allotted dimensions. Ferrite cores
management by simply connecting both S3 and S5 are often the best choice, although powdered iron is
terminals to the sleep-mode signals such as SLP_S3 and inexpensive and can work well at 200kHz. The core must
SLP_S5 in notebook PC system. All VDDQ, VTTREF and be large enough and not saturate at the peak inductor
VTT are turned on at S0 state (S3 = S5 = high). In S3 current (IPEAK) :
state (S3 = low, S5 = high), VDDQ and VTTREF voltages IPEAK ILOAD(MAX) (LIR /2) x ILOAD(MAX)
are kept on while VTT is turned off and left at high
This inductor ripple current also impacts transient-response
impedance (high-Z) state. The VTT output is floated and
performance, especially at low VIN − VVDDQ differences.
does not sink or source current in this state. In S4/S5
Low inductor values allow the inductor current to slew
states (S3 = S5 = low), all of the three outputs are disabled
faster, replenishing charge removed from the output filter
and discharged to ground. The code of each state
capacitors by a sudden load step. The peak amplitude of
represents the following: S0 = full ON, S3 = suspend to
the output transient (VSAG) is also a function of the output
RAM (STR), S4 = suspend to disk (STD), S5 = soft OFF.
transient. VSAG also features a function of the maximum
(See Table 2)
duty factor, which can be calculated from the on-time and
Table 2. S3 and S5 Truth Table minimum off-time :
STATE S3 S5 VDDQ VTTREF VTT VSAG
S0 Hi Hi On On On (ILOAD )2 x L x (tON tOFF(MIN) )
S3 Lo Hi On On Off (Hi-Z) 2 x COUT x VIN x tON VVDDQ x (tON tOFF(MIN) )
Off Off Off where minimum off-time, tOFF(MIN), is 400ns typically.
S4/S5 Lo Lo
(Discharge) (Discharge) (Discharge)
Output Capacitor Selection
VDDQ and VTT Discharge Mode The output filter capacitor must have low enough ESR to
The RT8248A discharges VDDQ, VTTREF and VTT outputs meet output ripple and load-transient requirements, yet
when S5 is low or in the S4/S5 state. have high enough ESR to satisfy stability requirements.
When in non-tracking discharge mode, the RT8248A Also, the capacitance must be high enough to absorb the
discharges outputs using internal MOSFETs which are inductor energy going from a full-load to no-load condition
connected to VDDQ and VTT. The current capability of without tripping the OVP circuit.
these MOSFETs is limited to discharge slowly. Note that For CPU core voltage converters and other applications
the VDDQ discharge current flows from VDDQ to GND in where the output is subject to violent load transients, the
this mode. In order to discharge smoothly, the RT8248A output capacitor's size depends on how much ESR is
provides a special function that the low-side MOSFET needed to prevent the output from dipping too low under a
will switch periodically as phase pin with remaining load transient. Ignoring the sag due to finite capacitance :
voltage. VPP
ESR
ILOAD(MAX)
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VPP
ESR 2.4
LIR x ILOAD(MAX)
1.8
where VP−P is the peak-to-peak output voltage ripple.
Organic semiconductor capacitor(s) or specialty polymer 1.2
capacitor(s) are recommended.
0.6
The amount of overshoot due to stored inductor energy
can be calculated as : 0.0
2 0 25 50 75 100 125
(IPEAK ) x L
VSOAR Ambient Temperature (°C)
2 x COUT x VVDDQ
Figure 7. Derating Curve of Maximum Power Dissipation
where IPEAK is the peak inductor current.
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA
where TJ(MAX) is the maximum junction temperature, TA is
the ambient temperature, and θJA is the junction to ambient
thermal resistance.
For recommended operating condition specifications, the
maximum junction temperature is 125°C. The junction to
ambient thermal resistance, θJA, is layout dependent. For
WQFN-20L 3x3 package, the thermal resistance, θJA, is
30°C/W on a standard JEDEC 51-7 four-layer thermal test
board. The maximum power dissipation at TA = 25°C can
be calculated by the following formula :
P D(MAX) = (125°C − 25°C) / (30°C/W) = 3.33W for
WQFN-20L 3x3 package
The maximum power dissipation depends on the operating
ambient temperature for fixed T J(MAX) and thermal
resistance, θJA. The derating curves in Figure 7 allow the
designer to see the effect of rising ambient temperature
on the maximum power dissipation.
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1 1
2 2
DETAIL A
Pin #1 ID and Tie Bar Mark Options
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