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1 Solid State.
1 Solid State.
1 Solid State.
Seven Primitive Unit Cells and their Possible Variations as Centred Unit Cells
Crystal Axial distances or
Possible variations Axial angles Examples
system edge lengths
Primitive, Body-centred,
Cubic a=b=c α = β = γ = 90° NaCl, Zinc blende, Cu
Face-centred
Tetragonal Primitive, Body-centred a=b≠c α = β = γ = 90° White tin, SnO2, TiO2, CaSO4
Primitive, Body-centred,
Orthorhombic a≠b≠c α = β = γ = 90° Rhombic sulphur, KNO3, BaSO4
Face-centred, End-centred
Hexagonal Primitive a=b≠c α = β = 90° γ = 120° Graphite, ZnO, CdS,
Rhombohedral
Primitive a=b=c α = β = γ ≠ 90° Calcite (CaCO3), HgS (cinnabar)
or Trigonal
Monoclinic Primitive, End-centred a≠b≠c α = γ = 90° β ≠ 90° Monoclinic sulphur, a2SO4.10H2O
Triclinic Primitive a≠b≠c α ≠ β ≠ γ ≠ 90° K2Cr2O7, CuSO4. 5H2O, H3BO3
Both hcp & ccp close packing are highly efficient and
74% space in the crystal is filled. In these, each sphere is
in contact with 12 spheres. So, the coordination number =
12.
Formula of a Compound and Number
of Voids Filled
- In ionic solids, bigger ions (usually anions) form the close
packed structure and smaller ions (usually cations) occupy
the voids. If cations are small, they occupy tetrahedral
voids. If they are big, they occupy octahedral voids.
- Not all octahedral or tetrahedral voids are occupied.
- Knowing the fraction of voids occupied, the chemical
- The number of these two types of voids depend upon the formula of the compound can be calculated.
number of close packed spheres.
Example 1: A compound is formed by two elements X and
Let the number of close packed spheres be N, then:
Y. Atoms of the element Y (as anions) make ccp and those
The number of octahedral voids generated = N
of the element X (as cations) occupy all the octahedral
The number of tetrahedral voids generated = 2N
voids. What is the formula of the compound?
(ii) Placingthird layer over the second layer:
Solution: The ccp lattice is formed by the element Y. The
There are two possibilities.
number of octahedral voids generated would be equal to the
(a) Covering Tetrahedral Voids:
number of atoms of Y present in it. Since all the octahedral
- In this, tetrahedral voids of the second layer are covered voids are occupied by the atoms of X, their number would
by the spheres of the third layer. This pattern is repeated also be equal to that of the element Y. Thus, the atoms of
and is called ABAB pattern. elements X and Y are present in equal numbers or 1:1 ratio.
- The structure packed in ABAB pattern is called hexagonal Therefore, the formula of the compound is XY.
close packed (hcp) structure. E.g. metals like Mg & Zn.
Example 2: Atoms of element B form hcp lattice and those
of the element A occupy 2/3 rd of tetrahedral voids. What is
the formula of the compound formed by elements A & B?
Solution: The number of tetrahedral voids formed is equal to
twice the number of atoms of element B and only 2/3 rd of
these are occupied by the atoms of element A. Hence the
ratio of the number of atoms of A and B is 2 × (2/3):1 or 4:3
and the formula of the compound is A4B3.
PACKING EFFICIENCY
It is the percentage of total space filled by the particles. - The length of the body diagonal c is equal to 4r, where r is
1. Packing Efficiency in hcp & ccp Structures the radius of the sphere (atom), as all the three spheres
- hcp & ccp are equally efficient. along the diagonal touch each other.
Therefore, √3a = 4r
Packing efficiency in ccp structure:
4r or r =√3 a
- Let unit cell edge length a = √3 4
be ‘a’ and face diagonal - In this type of structure, totalnumber of atoms is 2 and their
4
AC = b. volume is 2 x ( )r3
3
In Δ ABC 4 4
Volume of the cube, a3 is equal to ( r)3 or a3= ( r)3
AC2 = b2 = BC2 = AB2 √3 √3
ELECTRICAL PROPERTIES
Solids have electrical conductivities extending over 27 orders conduction band is called energy gap (band gap).
of magnitude ranging from 10–20 to 107 ohm–1m–1. - In metals, the conduction band is close to the valence band
Based on conductivity, solids are 3 types: and so electrons can easily flow into conduction band. So
a. Conductors: Their conductivities range from 104 to 107 metals are good conductors.
ohm–1m–1. Metals are good conductors (107 ohm–1m–1). - In insulators, energy gap is very large. So, electrons of filled
b. Insulators: They have very low conductivities ranging valence band cannot jump to conduction band.
from 10–20 to 10–10 ohm–1m–1.
Conduction of Electricity in Semiconductors
c. Semiconductors: Their conductivities range from 10–6 to
- In semiconductors, the gap between the valence band and
104 ohm–1m–1.
conduction band is small. Therefore, some electrons may
Conduction of Electricity in Metals jump to conduction band and show some conductivity.
- Metals conduct electricity in solid as well as molten state. - When temperature rises, conductivity of semiconductors
- Their conductivity depends on number of valence electrons. increases, since more electrons can jump to conduction band.
- Band theory states that the atomic orbitals of metal atoms - Substances like silicon & germanium which show semi-
overlap to form molecular orbitals. They are very close in conductivity in pure state are called intrinsic semiconductors.
energy forming energy levels called as energy band.
- The highest occupied energy band is called valence band.
The lowest unoccupied energy band is called conduction
band. The energy difference between the valence band and
(a) Electron-rich impurities
- Si & Ge (group 14 elements) have four valence electrons.
In their crystals, each atom forms four covalent bonds with
its neighbours.
- When doped with a group 15 element like P or As, which
contains five valence electrons, they occupy some of the
- Conductivity of intrinsic semiconductors can be increased lattice sites in Si or Ge crystal.
by adding a suitable impurity. This process is called - Out of 5 electrons, four electrons are used in the formation
doping. of four covalent bonds with neighbouring Si or Ge atoms.
- Doping can be done with an impurity which is electron The fifth electron becomes delocalised. These delocalised
rich electrons increase the conductivity of doped Si or Ge.
or electron deficient. Such impurities introduce electronic - Here the increase in conductivity is due to the negatively
defects in them. charged electron. Thus, Si or Ge doped with electron-rich
impurity is called n-type semiconductor.
(b) Electron-deficit impurities
- Si or Ge can also be doped with a group 13 element like B,
Al or Ga which contains only 3 valence electrons.
- The place where the fourth valence electron is missing is
called electron hole or electron vacancy.
- An electron from a neighbouring atom comes and fill the
electron hole, but it leaves an electron hole at its original
position. Thus, the hole can move across the crystal giving
rise to positive hole conduction.
- Si or Ge doped with electron-deficit impurity is called p-
type semiconductors.
MAGNETIC PROPERTIES
- Magnetic properties of all substances are due to electrons. - Pairing of electrons cancels their magnetic moments and
- Each electron in an atom behaves like a tiny magnet. Its they lose their magnetic character.
magnetic moment originates from two types of motions:
(iii) Ferromagnetism:
(i) Its orbital motion around the nucleus.
- Ferromagnetic substances are attracted very strongly by a
(ii) Its spin around its own axis.
magnetic field. E.g. Fe, cobalt, nickel, gadolinium &
CrO2.
- They can be permanently magnetised.
- In solid state, the metal ions of ferromagnetic substances
are grouped together into small regions called domains.
Each domain acts as a tiny magnet.
- In an unmagnetised ferromagnetic substance, domains are
randomly oriented. So, their magnetic moments get
cancelled.
- Magnitude of this magnetic moment is very small and is - When the substance is placed in a magnetic field, all the
measured in the unit called Bohr magneton, μB. It is equal domains get oriented in the direction of magnetic field and
to 9.27 × 10–24A m2. a strong magnetic effect is produced. This ordering
- Based on magnetic properties, substances are 5 categories: persists even when the magnetic field is removed. Thus,
(i) paramagnetic (ii) diamagnetic (iii) ferromagnetic ferromagnetic substance becomes a permanent magnet.
(iv) antiferromagnetic (v) ferrimagnetic. (iv) Antiferromagnetism:
(i) Paramagnetism: - Antiferromagnetic substances have domain structure
- Paramagnetic substances are weakly attracted by a similar to ferromagnetic substance, but their domains are
magnetic field. E.g. O2, Cu2+, Fe3+, Cr3+. oppositely oriented and cancel out each other's magnetic
- They are magnetised in a magnetic field in same direction. moment. E.g. MnO.
- They lose their magnetism in absence of magnetic field. (v) Ferrimagnetism:
- Paramagnetism is due to presence of one or more - In this, the magnetic moments of the domains are aligned
unpaired electrons which are attracted by the magnetic in parallel and anti-parallel directions in unequal numbers.
field. - They are weakly attracted by magnetic field. E.g. Fe3O4
(ii) Diamagnetism: (magnetite) and ferrites like MgFe2O4 & ZnFe2O4.
- Diamagnetic substances are weakly repelled by a - These substances also lose ferrimagnetism on heating and
magnetic field. E.g. H2O, NaCl & C6H6. become paramagnetic.
- They are weakly magnetised in a magnetic field in
opposite direction.
- Diamagnetism is shown by those substances in which all
the electrons are paired and there are no unpaired
electrons.