3.

003
Principles of Engineering Practice
Light

Materials

AR Coatings

Solar Cells

Light is an Electromagnetic Wave

Courtesy of the Opensource Handbook of Nanoscience and Nanotechnology.

 Observables
Electromagnetic Field Photonic Materials

�� voltage, �� dielectricconstant, �/�0

�� current, �� index of refraction, n
�� absorption, �

�� wavelength, �
�� group velocity, vg = co/N; N = group index
�� power, P

3
 Tool Box (1): Wave Equation

dielectric constant and index of refraction

time and spatial variation

n = index of refraction
= c0/c = 1 (vacuum)
= (�/�0)1/2 (in a material)

4
Harmonic Oscillator

F = -kx

E = � k x2

� = (k/m)1/2�

5
Tool Box (2): Harmonic Oscillator

absorption and dispersion

6
Polarizability, Dielectric Constant, Refractive Index

7
 Dielectric Constant

�/�0 (static)
Si 11.7 �� Absolute Magnitude
Ge 16
�� Materials Trend
�� Frequency
LiNbO3 43
�� Applications
BaTiO3 3600

8
Refractive index, (�/�0)1/2

�/�0 (static) nr (�)

Si 11.7 3.5
Ge 16 4
LiNbO3 43 2.27
BaTiO3 3600 2.46

9
 ‘The Chemical Bond’ (Pauling)
IIIA IVA VA VIA
Atomic Weight1
Group Classifications6 7
VIIA
( ) Indicates most stable
or best known isotope
10.811
2075 5 12.011
4492TP 6 14.00674
-210.00 7 15.9994
-218.79 8
Atomic Number2 2, - 4 - 3,4,5
VIIB
4000 3 3825SP -195.79 2, -182.95 -2

B C N O
2.31 2.25 1.25046 1.429
Melting Point7, C O 2.04 2.55 3.04 3.44
Oxidation States3 54.93805 8.298 11.260 14.534 13.618
bold indicates 25 1246 Boiling Point7, OC
[He]2s2p1
Boron
[He]2s2p2
Carbon
[He]2s2p3
Nitrogen
[He]2s2p4
Oxygen
most stable state 2, 3, 4, 6, 7 2061
7.47
26.981539
13 28.0855
14 30.973762
15 32.066
16
Symbol4 Mn 1.55
Density8, g/cm3 660.32
2519 3
1414
3265 4
44.15
277
- 3,4,5
115.21
444.60
- 2,4,6
(gases: g/L at 0OC, 1atm)
Al Si P S
7.435 2.702 2.33 1.82 2.07
Black = solid, red = gas,
[Ar]3d54s2 1.61 1.90 2.19 2.58
blue = liquid, 5.986 8.151 10.486 10.360
outline = synthetically Electronegativity9
Manganese [Ne]3s2p1 [Ne]3s2p2 [Ne]3s2p3 [Ne]3s2p4
prepared Aluminum Silicon Phosphorus Sulfur
First lonization
Electronic5
Potential10, eV
69.723
29.76 31 72.61
938.25 32 74.92159
817TP 33 78.96
221 34
Configuration 2204 3 2833 4 614SP - 3,5 685 -2,4,6

Ga Ge As Se
o
6.095 5.35 5.72725 C 4.81
1.81 2.01 2.18 2.55
Name4 5.999 7.899 9.81 9.752
[Ar]3d104s2p1 [Ar]3d104s2p2 [Ar]3d104s2p3 [Ar]3d104s2p4
Gallium Germanium Arsenic Selenium

Image by MIT OpenCourseWare. 114.818

156.60 49 118.710
231.93 50 121.757
630.63 51 127.60
449.51 52
2072 3 2602 2,4 1587 -
3,5 988 -2,4,6

In Sn Sb Te
o
7.30 7.28 6.68425 C 6.25
1.78 1.96 2.05 2.1
5.786 7.344 8.641 9.009
[Kr]4d105s2p1 [Kr]4d105s2p2 [Kr]4d105s2p3 [Kr]4d105s2p4
Indium Tin Antimony Tellurium

Image by MIT OpenCourseWare.

10
 Lattice parameter

• lattice parameter
�
• bond stiffness
�
• coefficient of thermal
�
1/r8, proportional to Repulsive Force expansion
Lattice Energy

E=0

1/r8 - 1/r

-1/r, proportional to Attractive Force

at r=r0 Inter-ion distance (r)

U is a minimum

11
Image courtesy of Frederick Frey. Used with permission.
Anti-Reflection Coating Design

�� Reflection (one surface)

R1 = (n0 – n1)2/(n0 + n1)2

�� Reflection (two surfaces:

interference)

phase difference = (2�n1/�) 2t cos��

�R2 = (n12 – n0n2)/(n0n2 + n12)� 12

 Anti-Reflection Coating Design

�� Set R=0
n1 = (n0n2)1/2

(index of middle layer is geometric mean of other two indices)

�� Sensitivity analysis: f(�,t,n)

13
MIT OpenCourseWare
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3.003 Principles of Engineering Practice

Spring 2010

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