IPDD60R170CFD7

MOSFET
600VCoolMOS™CFD7PowerTransistor PG-HDSOP-10-1

CoolMOS™isarevolutionarytechnologyforhighvoltagepower 10
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand 6
pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe tab

successortotheCoolMOS™CFD2seriesandisanoptimizedplatform
tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge Pin 1

(ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class 5

reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™
CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon’s
fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof
afastswitchingtechnologytogetherwithsuperiorhardcommutation
robustness,withoutsacrificingeasyimplementationinthedesign-in
process.
Drain
Pin 6-10, tab

Features
•Ultra-fastbodydiode Gate
•Lowgatecharge Pin 1
Driver
•Best-in-classreverserecoverycharge(Qrr) Source
Power
•ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness Pin 2
Source
•LowestFOMRDS(on)*QgandRDS(on)*Eoss Pin 3,4,5

•Best-in-classRDS(on)inSMDandTHDpackages

Benefits
•Excellenthardcommutationruggedness
•Highestreliabilityforresonanttopologies
•Highestefficiencywithoutstandingease-of-use/performancetradeoff
•Enablingincreasedpowerdensitysolutions

Potentialapplications
SuitableforSoftSwitchingtopologies
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging

Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications

Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET
devicestheplacementofthegateresistorisgenerallyrecommendedtobe
ontheDriverSourceinsteadoftheGate.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 170 mΩ
Qg,typ 23 nC
ID,pulse 42 A
Eoss @ 400V 2.6 µJ
Body diode diF/dt 1300 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPDD60R170CFD7 PG-HDSOP-10 60R170F7 see Appendix A

Final Data Sheet 1 Rev.2.0,2020-09-16

 600VCoolMOS™CFD7PowerTransistor
IPDD60R170CFD7

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet 2 Rev.2.0,2020-09-16

 600VCoolMOS™CFD7PowerTransistor
IPDD60R170CFD7

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 19 TC=25°C
Continuous drain current1) ID A
- - 12 TC=100°C
Pulsed drain current2) ID,pulse - - 42 A TC=25°C
Avalanche energy, single pulse EAS - - 49 mJ ID=3.3A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.24 mJ ID=3.3A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 3.3 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 137 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - n.a. Ncm -
Continuous diode forward current 1)
IS - - 19 A TC=25°C
Diode pulse current 2)
IS,pulse - - 42 A TC=25°C
VDS=0...400V,ISD<=12A,Tj=25°C
Reverse diode dv/dt3) dv/dt - - 70 V/ns
see table 8
VDS=0...400V,ISD<=12A,Tj=25°C
Maximum diode commutation speed diF/dt - - 1300 A/µs
see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1)
Limited by Tj max.
2)
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch with identical RG
Final Data Sheet 3 Rev.2.0,2020-09-16
 600VCoolMOS™CFD7PowerTransistor
IPDD60R170CFD7

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.91 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient
RthJA - 55 60 °C/W layer, 70µm thickness) copper area.
for SMD version
Tap exposed to air. PCB is vertical
without air stream cooling.
Soldering temperature, reflow soldering
Tsold - - 260 °C reflow MSL1
allowed

Final Data Sheet 4 Rev.2.0,2020-09-16

 600VCoolMOS™CFD7PowerTransistor
IPDD60R170CFD7

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.24mA
- - 1 VDS=600V,VGS=0V,Tj=25°C
Zero gate voltage drain current1) IDSS µA
- 5 37 VDS=600V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.139 0.17 VGS=10V,ID=4.9A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.317 - VGS=10V,ID=4.9A,Tj=150°C
Gate resistance RG - 11 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 1016 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 18 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
Co(er) - 33 - pF VGS=0V,VDS=0...400V
related2)
Effective output capacitance, time
Co(tr) - 329 - pF ID=constant,VGS=0V,VDS=0...400V
related3)
VDD=400V,VGS=10V,ID=6.0A,
Turn-on delay time td(on) - 23 - ns
RG=10.2Ω;seetable9
VDD=400V,VGS=10V,ID=6.0A,
Rise time tr - 12 - ns
RG=10.2Ω;seetable9
VDD=400V,VGS=10V,ID=6.0A,
Turn-off delay time td(off) - 82 - ns
RG=10.2Ω;seetable9
VDD=400V,VGS=10V,ID=6.0A,
Fall time tf - 5 - ns
RG=10.2Ω;seetable9

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 6 - nC VDD=400V,ID=6.0A,VGS=0to10V
Gate to drain charge Qgd - 8 - nC VDD=400V,ID=6.0A,VGS=0to10V
Gate charge total Qg - 23 - nC VDD=400V,ID=6.0A,VGS=0to10V
Gate plateau voltage Vplateau - 5.7 - V VDD=400V,ID=6.0A,VGS=0to10V

1)
Maximum specification is defined by calculated six sigma upper confidence bound
2)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
3)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 5 Rev.2.0,2020-09-16
 600VCoolMOS™CFD7PowerTransistor
IPDD60R170CFD7

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 1.0 - V VGS=0V,IF=4.9A,Tj=25°C
VR=400V,IF=6.0A,diF/dt=100A/µs;
Reverse recovery time trr - 88 132 ns
see table 8
VR=400V,IF=6.0A,diF/dt=100A/µs;
Reverse recovery charge Qrr - 0.33 0.66 µC
see table 8
VR=400V,IF=6.0A,diF/dt=100A/µs;
Peak reverse recovery current Irrm - 6.9 - A
see table 8

Final Data Sheet 6 Rev.2.0,2020-09-16

 600VCoolMOS™CFD7PowerTransistor
IPDD60R170CFD7

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
150 102

1 µs

125 10 µs
101

100 100 µs
100
Ptot[W]

ID[A]
75
1 ms
10-1
10 ms
50
DC

10-2
25

0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
2
10 100

1 µs
0.5
101
10 µs

0.2

100 100 µs
0.1
ZthJC[K/W]
ID[A]

10-1 0.05
0.02
0.01
10-1 1 ms

DC single pulse

10 ms
10-2

10-3 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 7 Rev.2.0,2020-09-16

 600VCoolMOS™CFD7PowerTransistor
IPDD60R170CFD7

Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
80 50

70 20 V
10 V 20 V
40 10 V
60 8V 8V

7V
50
30
ID[A]

ID[A]
40

20
30 7V

6V
20
10
5.5 V
10 6V
5V
5.5 V
4.5 V 5 V 4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.500 2.5

7V

6.5 V
0.450
20 V
6V 2.0
RDS(on)[normalized]

0.400
5.5 V
RDS(on)[Ω]

1.5

0.350
10 V

1.0
0.300

0.250 0.5
0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=4.9A;VGS=10V

Final Data Sheet 8 Rev.2.0,2020-09-16

 600VCoolMOS™CFD7PowerTransistor
IPDD60R170CFD7

Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
80 12

120 V 400 V
10
25 °C
60

VGS[V]
ID[A]

40 6
150 °C

20

0 0
0 2 4 6 8 10 12 0 6 12 18 24 30
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=6.0Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
2
10 50

40

101

25 °C 30
EAS[mJ]
IF[A]

125 °C

20
0
10

10

10-1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=3.3A;VDD=50V

Final Data Sheet 9 Rev.2.0,2020-09-16

 600VCoolMOS™CFD7PowerTransistor
IPDD60R170CFD7

Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
690 105

104
660

103 Ciss

630
VBR(DSS)[V]

C[pF]
102

600 Coss
101

Crss
570
100

540 10-1
-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy
5

3
Eoss[µJ]

0
0 100 200 300 400 500
VDS[V]
Eoss=f(VDS)

Final Data Sheet 10 Rev.2.0,2020-09-16

 600VCoolMOS™CFD7PowerTransistor
IPDD60R170CFD7

5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

Rg1

VDS

Rg 2

IF
Rg1 = Rg 2

Table9Switchingtimes(ss)
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS

ID VDS

VDS VDS
ID

Final Data Sheet 11 Rev.2.0,2020-09-16

 600VCoolMOS™CFD7PowerTransistor
IPDD60R170CFD7

6PackageOutlines

PG-HDSOP-10-1

DOCUMENT NO.
Z8B00184263

MILLIMETERS REVISION
DIMENSIONS 01
MIN. MAX.
A 2.20 2.35
A1 0.00 0.15 SCALE 5:1
A2 0.89 1.10 0 1 2 3 4 5mm
b 0.57 0.63
b2 0.57 0.93
c 0.46 0.58
D 15.20 15.60 EUROPEAN PROJECTION
D1 10.50 10.70
E 6.40 6.60
E1 5.20 5.50
e 1.14
N 10
H 20.81 21.11 ISSUE DATE
L 1.20 1.40 06.02.2017

Figure 1 Outline PG-HDSOP-10, dimensions in mm/inches

Final Data Sheet 12 Rev.2.0,2020-09-16

 600V CoolMOS™ CFD7 Power Transistor
IPDD60R170CFD7

7 Appendix A

Table 11 Related Links

• IFX CoolMOS CFD7 Webpage: www.infineon.com

• IFX CoolMOS CFD7 application note: www.infineon.com

• IFX CoolMOS CFD7 simulation model: www.infineon.com

• IFX Design tools: www.infineon.com

Final Data Sheet 13 Rev. 2.0, 2020-09-16

 600V CoolMOS™ CFD7 Power Transistor
IPDD60R170CFD7

Revision History
IPDD60R170CFD7

Revision: 2020-09-16, Rev. 2.0

Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2020-09-16 Release of final version

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Final Data Sheet 14 Rev. 2.0, 2020-09-16

Mouser Electronics

Authorized Distributor

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