LIGITEK ELECTRONICS CO.,LTD.

Property of Ligitek Only

LED ARRAY

LA112B-1/YG.G-1

DATA SHEET

DOC. NO : QW0905-LA112B-1/YG.G-1

REV. : A

DATE : 13 - Dec - 2004

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PART NO. LA112B-1/YG.G-1 Page 1/5

Package Dimensions

2.5± 0.3
4.3 8.2

YG 3.0

5.0 9.6

G
2.5

□0.5
3.2± 0.5
TYP

2.54TYP 4.45 ±0.5

+ -
1 2 6.99 ±0.5

Y
G
1 2 1 2
G + -

3.0

5.0

1.5MAX

G 25.0MIN
Y
□0.5
TYP
G
+ - 1 2

1.0MIN
LG2340-1 2.54TYP LYG2362

Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
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PART NO. LA112B-1/YG.G-1 Page 2/5

Absolute Maximum Ratings at Ta=25 ℃

Ratings
Parameter Symbol UNIT
Y G

Forward Current IF 20 30 mA
Peak Forward Current
IFP 80 120 mA
Duty 1/10@10KHz
Power Dissipation PD 60 100 mW

Reverse Current @5V Ir 10 10 μA

Operating Temperature Topr -40 ~ +85 ℃

Storage Temperature Tstg -40 ~ +100 ℃

Max 260 ℃ for 5 sec Max
Soldering Temperature Tsol (2mm from body)

Typical Electrical & Optical Characteristics (Ta=25 ℃)

Peak Spectral Forward Luminous Viewing

wave halfwidth voltage intensity angle
COLOR
PART NO MATERIAL length △λ nm @20mA(V) @10mA(mcd) 2θ 1/2
λPnm (deg)
Emitted Lens Min. Max. Min. Typ.

GaAsP/GaP Yellow 585 35 1.7 2.6 2.3 3.9 100

White Diffused
LA112B-1/YG.G-1 GaP Green 565 30 1.7 2.6 2.3 3.9 100

GaP Green Green Diffused 585 35 1.7 2.6 8.0 20 80

Note : 1.The forward voltage data did not including ± 0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
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PART NO. LA112B-1/YG.G-1 Page 3/5

Typical Electro-Optical Characteristics Curve

Y CHIP

Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current

1000 3.0
Forward Current(mA)

2.5

Normalize @20mA
Relative Intensity
100
2.0

10 1.5

1.0
1.0
0.5

0.1 0.0
1.0 2.0 3.0 4.0 5.0 1.0 10 100 1000

Forward Voltage(V) Forward Current(mA)

Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature

1.2
3.0
Relative Intensity@20mA
Forward Voltage@20mA

2.5
Normalize @25 ℃

1.1
Normalize @25 ℃

2.0

1.0 1.5

1.0
0.9
0.5

0.8 0.0
-40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100

Ambient Temperature(℃) Ambient Temperature( ℃)

Fig.5 Relative Intensity vs. Wavelength

1.0
Relative Intensity@20mA

0.5

0.0
500 550 600 650 700

Wavelength (nm)
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PART NO. LA112B-1/YG.G-1 Page 4/5

Typical Electro-Optical Characteristics Curve

G CHIP

Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current

1000 3.5
Forward Current(mA)

3.0

Normalize @20mA
Relative Intensity
100 2.5
2.0
10
1.5

1.0 1.0
0.5
0.1 0.0
1.0 2.0 3.0 4.0 5.0 1.0 10 100 1000

Forward Voltage(V) Forward Current(mA)

Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature

1.2 3.0
Relative Intensity@20mA
Forward Voltage@20mA

2.5
Normalize @25 ℃

1.1
Normalize @25 ℃

2.0

1.0 1.5

1.0
0.9
0.5

0.8 0.0
-40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100

Ambient Temperature( ℃) Ambient Temperature( ℃)

Fig.5 Relative Intensity vs. Wavelength

1.0
Relative Intensity@20mA

0.5

0.0
500 550 600 650

Wavelength (nm)

PART NO. LA112B-1/YG.G-1
Reliability Test:
Test Item Test Condition
1.Under Room Temperature
Operating Life Test 2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
High Temperature 1.Ta=105 ℃±5℃
Storage Test 2.t=1000 hrs (-24hrs, +72hrs)
Low Temperature 1.Ta=-40 ℃±5 ℃
Storage Test 2.t=1000 hrs (-24hrs, +72hrs)
High Temperature 1.Ta=65 ℃±5 ℃
High Humidity Test 2.RH=90 %~95%
3.t=240hrs ±2hrs
1.Ta=105 ℃±5℃&-40 ℃±5℃
Thermal Shock Test (10min) (10min)
2.total 10 cycles
Solder Resistance 1.T.Sol=260 ℃±5 ℃
Test 2.Dwell time= 10 ±1sec.
1.T.Sol=230 ℃±5 ℃
Solderability Test
2.Dwell time=5 ±1sec
LIGITEK ELECTRONICS CO.,LTD.
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Page 5/5
Reference
Description
Standard
This test is conducted for the purpose MIL-STD-750: 1026
of detemining the resisance of a part MIL-STD-883: 1005
in electrical and themal stressed. JIS C 7021: B-1
The purpose of this is the resistance of
the device which is laid under ondition MIL-STD-883:1008
of hogh temperature for hours. JIS C 7021: B-10
The purpose of this is the resistance
of the device which is laid under
JIS C 7021: B-12
condition of low temperature for hours.
The purpose of this test is the resistance MIL-STD-202:103B
of the device under tropical for hous. JIS C 7021: B-11
The purpose of this is the resistance of MIL-STD-202: 107D
the device to sudden extreme changes MIL-STD-750: 1051
in high and low temperature. MIL-STD-883: 1011
This test intended to determine the
thermal characteristic resistance MIL-STD-202: 210A
of the device to sudden exposures MIL-STD-750: 2031
at extreme changes in temperature JIS C 7021: A-1
when soldering the lead wire.
MIL-STD-202: 208D
This test intended to see soldering well MIL-STD-750: 2026
performed or not. MIL-STD-883: 2003
JIS C 7021: A-2