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IRF9540N
IRF9540N
IRF9540N
HEXFET® Power MOSFET
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = -100V
l 175°C Operating Temperature
l Fast Switching RDS(on) = 0.117Ω
l P-Channel G
l Fully Avalanche Rated
ID = -23A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.1
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
5/13/98
IRF9540N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.117 Ω VGS = -10V, ID = -11A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = V GS, ID = -250µA
gfs Forward Transconductance 5.3 ––– ––– S VDS = -50V, ID = -11A
––– ––– -25 VDS = -100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 97 ID = -11A
Qgs Gate-to-Source Charge ––– ––– 15 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 51 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 15 ––– VDD = -50V
tr Rise Time ––– 67 ––– ID = -11A
ns
td(off) Turn-Off Delay Time ––– 51 ––– RG = 5.1Ω
tf Fall Time ––– 51 ––– RD = 4.2Ω, See Fig. 10
D
Between lead,
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S
VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -11A, VGS = 0V
trr Reverse Recovery Time ––– 150 220 ns TJ = 25°C, IF = -11A
Q rr Reverse RecoveryCharge ––– 830 1200 nC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C
Starting TJ = 25°C, L = 7.1mH Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -11A. (See Figure 12)
IRF9540N
100 100
VGS VGS
TO P - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V - 7.0V
- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOT TOM - 4.5V BOTTOM - 4.5V
10 10
-4 .5V
-4 .5V 2 0µ s P U LS E W ID TH 2 0µ s P U LS E W ID TH
T Jc = 2 5°C A T JC = 1 75 °C
1 1 A
0.1 1 10 100 0.1 1 10 100
-VD S , D rain-to-S ourc e V oltage (V ) -VD S , D rain-to-S ource V oltage (V )
100 2.5
I D = -19 A
R D S (on) , Drain-to-S ource O n Resistance
-I D , D rain-to -So urc e C urre nt (A )
TJ = 25 °C
2.0
TJ = 1 7 5°C
10
(N orm alized)
1.5
1.0
1
0.5
V DS = -2 5 V
2 0µ s P U L S E W ID TH VG S = -1 0V
0.1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
-VG S , Ga te -to-Source Volta ge (V) T J , Junction T em perature (°C )
2000
C iss
12
1500
C oss 8
1000
C rss
4
500
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
0 A 0 A
1 10 100 0 20 40 60 80 100
-VD S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC )
100 1000
O P E R A T IO N IN T H IS A R E A L IM ITE D
-I S D , Reverse D rain Current (A )
B Y R D S (o n)
-I D , D rain C urrent (A )
10 100
T J = 17 5°C
T J = 2 5°C
10 0µs
1 10
1m s
T C = 25 °C
T J = 17 5°C 10m s
V G S = 0V S ing le P u lse
0.1 A 1 A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000
-VS D , S ourc e-to-D rain V oltage (V ) -VD S , D rain-to-S ourc e V oltage (V )
-10V
15 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on) tr t d(off) tf
5 VGS
10%
0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
10
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.10 P DM
0.1
0.05 t1
0.02 SINGLE PULSE t2
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
600
15V
400
0 A
25 50 75 100 125 150 175
S tarting T J , J unc tion T em perature (°C )
Current Regulator
Same Type as D.U.T.
50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS
VGS
VG
-3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
IRF9540N
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ ISD ]
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http://www.irf.com/ Data and specifications subject to change without notice. 5/98