Viva questions:

1)What is static and dynamic resistances in case of junction diodes?

Static Resistance: The resistance offered by a p-n junction diode when it is connected to a DC
circuit is called static resistance. (OR) It is the ratio of DC voltage applied across diode ... The
dynamic resistance of a diode is the ratio of change in voltage to the change in current.
2) Reverse resistance is the resistance offered by the p-n junction diode when it is reverse biased.
When reverse biased voltage is applied to the p-n junction diode, the width of depletion region
increases. This depletion region acts as barrier to the electric current.
3)What is PN junction diode?

A p-n junction diode is two-terminal or two-electrode semiconductor device, which allows the
electric current in only one direction while blocks the electric current in opposite or reverse
direction. ... P-N junction semiconductor diode is also called as p-n junction semiconductor
device.
4) Define forward bias pn junction diode
Forward bias or biasing is where the external voltage is delivered across the P-N junction diode.
In a forward bias setup, the P-side of the diode is attached to the positive terminal and N-side is
fixed to the negative side of the battery. Here, the applied voltage is opposite to the junction
barrier potential.
5) Define reverse bias pn junction diode
The process by which, a p-n junction diode blocks the electric current in the presence of applied
voltage is called reverse biased p-n junction diode. These positive ions at p-n junction (n-side)
oppose the flow of positive charge carriers (holes) from p-side. ...
6) What is Zener diode?

A Zener diode is a silicon semiconductor device that permits current to flow in either a forward
or reverse direction. The diode consists of a special, heavily doped p-n junction, designed to
conduct in the reverse direction when a certain specified voltage is reached
7) What is breakdown voltage and its unit?

The minimum voltage required to “break” an insulator by forcing current through it is called the
breakdown voltage or dielectric strength. ... Specific dielectric strength is typically rated in one
of two equivalent units: volts per mil, or kilovolts per inch.

8) What is breakdown voltage and knee voltage?

The forward voltage, at which the current through the junction starts increasing rapidly, is called
the knee voltage or cut-in voltage. The reverse voltage at which P-N junction of a diode breaks
down with sudden rise in reverse current is known as break down voltage.
9) What is meant by Zener breakdown voltage?
When reverse biased voltage applied to the zener diode reaches zener voltage, it starts allowing
large amount of electric current. At this point, a small increase in reverse voltage will rapidly
increases the electric current. Because of this sudden rise in electric current, breakdown occurs
called zener breakdown.
9) Why do we use zener diode?

Zener diodes are used for voltage regulation, as reference elements, surge suppressors, and in
switching applications and clipper circuits. The load voltage equals breakdown voltage VZ of the
diode. The series resistor limits the current through the diode and drops the excess voltage when
the diode is conducting.
10) What is meant by common emitter configuration?

The common emitter (CE) configuration is the most widely used transistor configuration. The
common emitter (CE) amplifiers are used when large current gain is needed. The input signal is
applied between the base and emitter terminals while the output signal is taken between the
collector and emitter terminals.
11) Why BJT is called bipolar?

Bipolar transistors are a type of transistor composed of pn junctions, which are also called
bipolar junction transistors (BJTs). Whereas a field-effect transistor is a unipolar device, a
bipolar transistor is so named because its operation involves two kinds of charge carriers, holes
and electrons.
12) What are the layers of BJT?

BJTs have three terminals, corresponding to the three layers of semiconductor—an emitter, a
base, and a collector.
13) Is BJT is a current controlled device?

A BJT is a current controlled device because its output characteristics are determined by the
input current. A FET is voltage controlled device because its output characteristics are
determined by the Field which depends on Voltage applied.
14) What is the function of BJT?

The main basic function of a BJT is to amplify current it will allow BJTs are used as amplifiers
or switches to produce wide applicability in electronic equipment include mobile phones,
industrial control, television, and radio transmitters.
15) Why BJT is used as switch?

The transistor can be used as a switch if biased in the saturation and cut-off regions. This allows
current to flow (or not) in other parts of a circuit. Because a transistor's collector current is
proportionally limited by its base current, it can be used as a sort of current-controlled switch.
16) What is H parameter in two port network?
h parameter of two port network is a square matrix of order 2×2. Basically it is a way to
represent a two port network. It is also known as hybrid parameter. In this form of
representation, voltage of input port and current of the output port is expressed in terms of
current of input port and voltage of output port.
17) What are the four H parameters?

These are the four basic parameters for a BJT in common emitter. Typical values are hre = 1 x10-
4
, hoe typical value 20uS, hie typically 1k to 20k and hfe can be 50 - 750.
...

hie input impedance (Ω)

hre reverse voltage ratio (dimensionless)

hfe forward current transfer ratio (dimensionless)

hoe output admittance (Siemen)

18) What is common base configuration?

In common base configuration, emitter is the input terminal, collector is the output terminal and
base terminal is connected as a common terminal for both input and output. ... Thus the base
terminal of a transistor is common for both input and output terminals and hence it is named as
common base configuration.
19) Advantages and disadvantages of FETs

The advantages of FETs relative to BJTs are summarized as follows:

1. FETs are voltage-sensitive devices with high input impedance (on the order of 107 to
1012 Ω). Since this input impedance is considerably higher than that of BJTs, FETs are
preferred over BJTs for use as the input stage to a multistage amplifier.
2. One class of FETs (JFETs) generates lower noise than BJTs.
3. FETs are more temperature stable than BJTs.
4. FETs are generally easier to fabricate than BJTs. Greater numbers of devices can be
fabricated on a single chip (i.e., increased packing density is possible).
5. FETs react like voltage-controlled variable resistors for small values of drain-to-source
voltage.
6. The high input impedance of FETs permit them to store charge long enough to allow
them to be used as storage elements.
7. Power FETs can dissipate high power and can switch large currents.
8. FETs are not as sensitive to radiation as BJTs (an important consideration for space
electronic applications).
There are several disadvantages that limit the use of FETs in some applications. These are:
1. FETs amplifiers usually exhibit poor frequency response because of high input
capacitance.
2. Some types of FETs exhibit poor linearity.
3. FETs can be damaged in handling due to static electricity.
20) What is drain resistance Rd?

Corresponding to the a.c. plate resistance, we have a.c. drain resistance in a JFET.it may be
defined as the ratio of change in drain-source voltage (ΔVDS) to the change in drain current
(ΔID) at constant gate gate-source voltage i.e.

21) What is FET transconductance?

Transconductance is an expression of the performance of a bipolar transistor or field-effect

transistor (FET). ... For an FET, transconductance is the ratio of the change in drain current to the
change in gate voltage over a defined, arbitrarily small interval on the drain-current-versus-gate-
voltage curve.

22) What is the amplification factor of FET?

Amplification factor of a JFET indicates how much more control the gate voltage has over drain
current then has the drain voltage. For instance, if the amplification factor of a JFET is 50, it
means that gate voltage is 50 times as effective as the drain voltage is controlling the drain
current.

23) Silicon Controlled Rectifier Definition

A Silicon Controlled Rectifier is a 3 terminal and 4 layer semiconductor current controlling

device. It is mainly used in the devices for the control of high power. Silicon controlled rectifier
is also sometimes referred to as SCR diode, 4-layer diode, 4-layer device, or Thyristor. It is made
up of a silicon material which controls high power and converts high AC current into DC current
(rectification). Hence, it is named as silicon controlled rectifier.

24) What is Silicon Controlled Rectifier?

Silicon controlled rectifier is a unidirectional current controlling device. Just like a normal p-n
junction diode, it allows electric current in only one direction and blocks electric current in
another direction. A normal p-n junction diode is made of two semiconductor layers namely P-
type and N-type. However, a SCR diode is made of 4 semiconductor layers of alternating P and
N type materials.
The principle of p-n-p-n switching was developed by Tanenbaum, Goldey, Moll and Holonyak
of Bell Laboratories in 1956. The silicon controlled rectifier was developed by a team of power
engineers led by Gordon Hall and commercialized by Frank W. Frank W. "Bill" Gutzwiller in
1957. In the early days of this device development, it is often referred by names like SCR and
controlled rectifier. However, now-a-days, this device is often referred by Thyristor.

Silicon controlled rectifiers are used in power control applications such as power delivered to
electric motors, relay controls or induction heating elements where the power delivered has to be
controlled.

25) Silicon Controlled Rectifier Symbol

The schematic symbol of a silicon controlled rectifier is shown in the below figure. A SCR diode
consists of three terminals namely anode (A), cathode (K), Gate (G). The diode arrow represents
the direction of conventional current.
26) Forward break over voltage of SCR is the minimum forward voltage at which SCR starts
conducting. ... In general, this voltage is in the range of 50 to 500 Volts. If gate is supplied by a
positive current then forward break over voltage occurs earlier than no gate current condition.
What is a Clipper Circuit?

27) An electronic device that is used to evade the output of a circuit to go beyond the preset value
(voltage level) without varying the remaining part of the input waveform is called a Clipper circuit.
28) An electronic circuit that is used to alter the positive peak or negative peak of the input signal
to a definite value by shifting the entire signal up or down to obtain the output signal peaks at the
desired level is called a Clamper circuit.
29) full-wave rectifier -a rectifier that converts alternating current into continuous current and
that utilizes both halves of each cycle of the alternating current

30) Kirchhoffs Voltage Law or KVL, states that “in any closed loop network, the total voltage
around the loop is equal to the sum of all the voltage drops within the same loop” which is also
equal to zero. In other words the algebraic sum of all voltages within the loop must be equal to
zero. This idea by Kirchhoff is known as the Conservation of Energy.

31)Kirchhoff’s Current Law or KCL, states that the “total current or charge entering a junction
or node is exactly equal to the charge leaving the node as it has no other place to go except to
leave, as no charge is lost within the node“. In other words the algebraic sum of ALL the currents
entering and leaving a node must be equal to zero, I(exiting) + I(entering) = 0. This idea by Kirchhoff
is commonly known as the Conservation of Charge.

32) Thevenin’s Theorem states that “Any linear circuit containing several voltages and
resistances can be replaced by just one single voltage in series with a single resistance connected
across the load“.

33) What is meant by Norton's theorem?

What is Norton's Theorem? Norton's Theorem states that it is possible to simplify any linear
circuit, no matter how complex, to an equivalent circuit with just a single current source
and parallel resistance connected to a load.
34) What is meant by superposition theorem?

The superposition theorem states that a circuit with multiple voltage and current sources is
equal to the sum of simplified circuits using just one of the sources.

35)Reciprocity theorem

The reciprocity theorem states that the current at one point in a circuit due to a voltage at a
second point is the same as the current at the second point due to the same voltage at the
first. ... The reciprocity theorem is a feature of a more general principle of reciprocity in
electromagnetism.

36) What is maximum power transfer formula?

Condition for Maximum Power Transfer

Therefore, the condition for maximum power dissipation across the load is RL=RTh. That
means, if the value of load resistance is equal to the value of source resistance i.e., Thevenin's
resistance, then the power dissipated across the load will be of maximum value.

37)series resonance circuit

Series resonance is a resonance condition that usually occurs in series circuits, where the
current becomes a maximum for a particular voltage. In series resonance, the current is
maximum at resonant frequency. The series resonance current curve increases to a maximum at
resonance then decreases as resonance is passed.

38)parallel resonance circuit

A parallel circuit consisting of inductor and capacitor in which the inductive reactance and
the capacitive reactance are equal and obtain maximum impedance at the frequency at
which the circuit is resonant.

39) What is frequency response of a circuit?

The frequency response of a device or a circuit describes its operation over a specified range of
signal frequencies by showing how its gain, or the amount of signal it lets through changes
with frequency.