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0.

4 Amp Output Current


IGBT Gate Drive Optocoupler

Technical Data

HCPL-314J

Features Functional Diagram


• 0.4 A Minimum Peak Description
Output Current The HCPL-314J family of devices N/C 1 16 VCC
• High Speed Response: consists of an AlGaAs LED
0.7 µs Max. Propagation optically coupled to an integrated
ANODE 2 15 VO

Delay over Temp. Range circuit with a power output stage. CATHODE 3
SHIELD
14 VEE

• Ultra High CMR: Min. These optocouplers are ideally


10 kV/µs at VCM = 1.5 kV suited for driving power IGBTs
• Bootstrappable Supply and MOSFETs used in motor
ANODE 6 11 VCC

Current: Max. 3 mA control inverter applications. The CATHODE 7 10 VO


• Wide Operating Temp. high operating voltage range of N/C 8 9 VEE
Range: -40°C to 100°C the output stage provides the
SHIELD

• Wide VCC Operating Range: drive voltages required by gate


10 V to 30 V over Temp. HCPL-314J
controlled devices. The voltage
Range and current supplied by this
• Available in DIP8 (Single) optocoupler makes it ideally Truth Table
and SO16 (Dual) Package suited for directly driving small
• Safety Approvals: UL or medium power IGBTs. For LED VO
Recognized, 3750 Vrms for IGBTs with higher ratings the OFF LOW
1 Minute. CSA Approval. HCPL-3150(0.5A) or HCPL-3120 ON HIGH
IEC/EN/DIN EN 60747-5-2 (2.0A) optocouplers can be used.
Approval VIORM=891 V peak

Applications
• Isolated IGBT/Power
MOSFET Gate Drive
• AC and Brushless DC Motor
Drives
• Inverters for Appliances
• Industrial Inverters
• Switch Mode Power
Supplies (SMPS)
• Uninterruptable Power
Supplies (UPS)

A 0.1 µF bypass capacitor must be connected between pins VCC and V EE.

CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent
damage and/or degradation which may be induced by ESD.
2

Selection Guide
Package Type Part Number Number of Channels
SO16 HCPL-314J 2

Ordering Information
Specify part number followed by option number (if desired)

Example:
HCPL-314J#YYYY

No option = SO16 Package.

500 = Tape and Reel Packaging Option.

XXXE = Lead Free Option


Remarks: The notation “#” is used for existing products, while (new) products launched since 15th July 2001 and lead free option will use “–”

Package Outline Drawing


HCPL-314J SO16 Package:
LAND PATTERN RECOMMENDATION
TOP VIEW

16 15 14 11 10 9
VCC1
VO1
GND1

VCC2
VO2
GND2

8.76 ± 0.20 7.49 ± 0.10 11.63 (0.458)


HCPL-314J
(0.345 ± 0.008) (0.295 ± 0.004)
VIN1

VIN2
NC

NC
V1

V2

1 2 3 6 7 8
2.16 (0.085)

0.64 (0.025)

0.10 - 0.30
(0.004 - 0.0118) 8.76 ± 0.20
STANDOFF (0.345 ± 0.008)

VIEW
FROM
PIN 16
0 - 8°


0.64 0.23
(0.025 MIN.) (0.0091)
VIEW 3.51 ± 0.13 10.36 ± 0.20
FROM (0.138 ± 0.005) (0.408 ± 0.008)
PIN 1

0.457 1.27 ALL LEADS TO BE COPLANAR ± 0.05 mm (0.002 INCHES) .


(0.018) (0.050)
0.016 ± 0.0003 DIMENSIONS IN MILLIMETERS AND (INCHES).
(0.406 ± 0.007)
NOTE: FLOATING LEAD PROTRUSION IS 0.25 mm (10 mils) MAX.
3

Solder Reflow Thermal Profile Regulatory Information


The HCPL-314J has been
300
approved by the following
PREHEATING RATE 3°C + 1°C/–0.5°C/SEC.
REFLOW HEATING RATE 2.5°C ± 0.5°C/SEC.
organizations:
PEAK
PEAK
TEMP.
TEMP.
245°C
240°C
PEAK IEC/EN/DIN EN 60747-5-2
TEMP.
230°C Approved under:
TEMPERATURE (°C)

200
2.5°C ± 0.5°C/SEC.

30
SOLDERING
TIME
IEC 60747-5-2:1997 + A1:2002
160°C
150°C
140°C
SEC. 200°C
EN 60747-5-2:2001 + A1:2002
30
SEC.
DIN EN 60747-5-2 (VDE 0884
3°C + 1°C/–0.5°C
100
Teil 2):2003-01.
PREHEATING TIME
150°C, 90 + 30 SEC. 50 SEC.
UL
TIGHT
ROOM
TYPICAL
LOOSE
Approval under UL 1577,
TEMPERATURE
0
component recognition program
0 50 100 150 200 250 up to VISO = 3750 Vrms. File
TIME (SECONDS) E55361.

CSA
Approved under CSA Component
Recommended Pb-Free IR Profile Acceptance Notice #5, File CA
88324.
TIME WITHIN 5 °C of ACTUAL
PEAK TEMPERATURE
tp
20-40 SEC.
260 +0/-5 °C
Tp
217 °C
TL
RAMP-UP
TEMPERATURE

3 °C/SEC. MAX. RAMP-DOWN


150 - 200 °C 6 °C/SEC. MAX.
Tsmax
Tsmin
ts tL
PREHEAT 60 to 150 SEC.
60 to 180 SEC.

25
t 25 °C to PEAK
TIME
NOTES:
THE TIME FROM 25 °C to PEAK TEMPERATURE = 8 MINUTES MAX.
Tsmax = 200 °C, Tsmin = 150 °C
4

IEC/EN/DIN EN 60747-5-2 Insulation Characteristics


Description Symbol Characteristic Unit
Installation classification per DIN VDE 0110/1.89, Table 1
for rated mains voltage ≤ 150 Vrms I - IV
for rated mains voltage ≤ 300 Vrms I - III
for rated mains voltage ≤ 600 Vrms I-II
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Maximum Working Insulation Voltage VIORM 891 Vpeak
Input to Output Test Voltage, Method b*
VIORM x 1.875=V PR, 100% Production Test with V PR 1670 Vpeak
tm=1 sec, Partial discharge < 5 pC
Input to Output Test Voltage, Method a*
VIORM x 1.5=VPR, Type and Sample Test, tm=60 sec, V PR 1336 Vpeak
Partial discharge < 5 pC
Highest Allowable Overvoltage V IOTM 6000 Vpeak
(Transient Overvoltage tini = 10 sec)
Safety-limiting values - maximum values allowed in the
event of a failure.
Case Temperature TS 175 °C
Input Current** IS,INPUT 400 mA
Output Power** PS, OUTPUT 1200 mW
Insulation Resistance at TS, VIO = 500 V RS >109 Ω
* Refer to the optocoupler section of the Isolation and Control Components Designer’s Catalog, under Product Safety Regulations
section, IEC/EN/DIN EN 60747-5-2, for a detailed description of Method a and Method b partial discharge test profiles.
** Refer to the following figure for dependence of PS and IS on ambient temperature.
OUTPUT POWER – PS, INPUT CURRENT – IS

800
PS (mW)
700
IS (mA)
600

500

400

300

200

100

0
0 25 50 75 100 125 150 175 200
TS – CASE TEMPERATURE – °C
5

Insulation and Safety Related Specifications

Parameter Symbol HCPL-314J Units Conditions


Minimum External Air Gap L(101) 8.3 mm Measured from input terminals
(Clearance) to output terminals, shortest
distance through air.
Minimum External Tracking L(102) 8.3 mm Measured from input terminals
(Creepage) to output terminals, shortest
distance path along body.
Minimum Internal Plastic Gap 0.5 mm Through insulation distance
(Internal Clearance) conductor to conductor, usually
the straight line distance
thickness between the emitter
and detector.
Tracking Resistance CTI >175 V DIN IEC 112/VDE 0303 Part 1
(Comparative Tracking Index)
Isolation Group IIIa Material Group (DIN VDE
0110, 1/89, Table 1)

Absolute Maximum Ratings


Parameter Symbol Min. Max. Units Note
Storage Temperature TS -55 125 °C
Operating Temperature TA -40 100 °C
Average Input Current IF(AVG) 25 mA 1
Peak Transient Input Current (<1 µs pulse IF(TRAN) 1.0 A
width, 300pps)
Reverse Input Voltage VR 3 V
“High” Peak Output Current IOH(PEAK) 0.6 A 2
“Low” Peak Output Current IOL(PEAK) 0.6 A 2
Supply Voltage VCC-VEE -0.5 35 V
Output Voltage VO(PEAK) -0.5 VCC V
Output Power Dissipation PO 260 mW 3
Input Power Dissipation PI 105 mW 4
Lead Solder Temperature 260°C for 10 sec., 1.6 mm below seating plane
Solder Reflow Temperature Profile See Package Outline Drawings section

Recommended Operating Conditions


Parameter Symbol Min. Max. Units Note
Power Supply VCC -VEE 10 30 V
Input Current (ON) IF(ON) 8 12 mA
Input Voltage (OFF) VF(OFF) -3.0 0.8 V
Operating Temperature TA - 40 100 °C
6

Electrical Specifications (DC)


Over recommended operating conditions unless otherwise specified.
Test
Parameter Symbol Min. Typ. Max. Units Conditions Fig. Note
High Level Output Current IOH 0.2 A Vo = V CC- 4 2 5
0.4 0.5 Vo = VCC-10 3 2
Low Level Output Current IOL 0.2 0.4 A Vo = VEE+2.5 5 5
0.4 0.5 Vo = V EE+10 6 2
High Level Output Voltage VOH VCC-4 VCC-1.8 V Io = -100 mA 1 6,7
Low Level Output Voltage VOL 0.4 1 V Io = 100 mA 4
High Level Supply Current ICCH 0.7 3 mA Io = 0 mA 7,8 15
Low Level Supply Current ICCL 1.2 3 mA Io = 0 mA
Threshold Input Current IFLH 5 mA Io = 0 mA, 9,15
Low to High Vo>5 V
Threshold Input Voltage VFHL 0.8 V
High to Low
Input Forward Voltage VF 1.2 1.5 1.8 V IF = 10 mA 16
Temperature Coefficient of ∆VF/∆TA -1.2 mV/°C
Input Forward Voltage
Input Reverse Breakdown BVR 3 10 V IR = 100 µA
Voltage
Input Capacitance C IN pF f = 1 MHz,
VF = 0 V

Switching Specifications (AC)


Over recommended operating conditions unless otherwise specified.
Test
Parameter Symbol Min. Typ. Max. Units Conditions Fig. Note
Propagation Delay Time to tPLH 0.1 0.2 0.7 µs Rg = 47 Ω, 10,11, 14
High Output Level Cg = 3 nF, 12,13,
Propagation Delay Time to tPHL 0.1 0.3 0.7 µs f = 10 kHz, 14,17
Low Output Level Duty Cycle =
50%,
Propagation Delay PDD -0.5 0.5 µs 10
IF = 8 mA,
Difference Between Any
VCC = 30 V
Two Parts or Channels
Rise Time tR ns
Fall Time tF ns
Output High Level Common |CMH| 10 30 kV/µs TA = 25°C, 18 11,
Mode Transient Immunity VCM = 1.5 kV 12
Output Low Level Common |CML| 10 30 kV/µs 18 11,
Mode Transient Immunity 13
7

Package Characteristics
For each channel unless otherwise specified.
Test
Parameter Symbol Min. Typ. Max. Units Conditions Fig. Note
Input-Output Momentary VISO 3750 Vrms TA=25°C, 8,9
Withstand Voltage RH<50% for
Output-Output Momentary VO-O 1500 Vrms 1 min. 16
Withstand Voltage
Input-Output Resistance RI-O 1012 Ω VI-O=500 V 9
Input-Output Capacitance CI-O 1.2 pF Freq=1 MHz

Notes:
1. Derate linearly above 70°C free air temperature at a rate of 0.3 mA/°C.
2. Maximum pulse width = 10 µs, maximum duty cycle = 0.2%. This value is intended to allow for component tolerances for designs
with IO peak minimum = 0.4 A. See Application section for additional details on limiting IOL peak.
3. Derate linearly above 85°C, free air temperature at the rate of 4.0 mW/°C.
4. Input power dissipation does not require derating.
5. Maximum pulse width = 50 µs, maximum duty cycle = 0.5%.
6. In this test, VOH is measured with a DC load current. When driving capacitive load VOH will approach VCC as IOH approaches zero
amps.
7. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
8. In accordance with UL 1577, each HCPL-314J optocoupler is proof tested by applying an insulation test voltage ≥ 5000 Vrms for
1 second (leakage detection current limit II-O ≤ 5 µA). This test is performed before 100% production test for partial discharge
(method B) shown in the IEC/EN/DIN EN 60747-5-2 Insulation Characteristics Table, if applicable.
9. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together.
10. PDD is the difference between tPHL and tPLH between any two parts or channels under the same test conditions.
11. Pins 3 and 4 (HCPL-314J) need to be connected to LED common.
12. Common mode transient immunity in the high state is the maximum tolerable |dVcm/dt| of the common mode pulse VCM to
assure that the output will remain in the high state (i.e. Vo > 6.0 V).
13. Common mode transient immunity in a low state is the maximum tolerable |dVCM/dt| of the common mode pulse, VCM , to assure
that the output will remain in a low state (i.e. Vo < 1.0 V).
14. This load condition approximates the gate load of a 1200 V/25 A IGBT.
15. For each channel. The power supply current increases when operating frequency and Qg of the driven IGBT increases.
16. Device considered a two terminal device: Channel one output side pins shorted together, and channel two output side pins shorted
together.
8

(VOH-VCC) – OUTPUT HIGH VOLTAGE DROP – V


(VOH-VCC) – HIGH OUTPUT VOLTAGE DROP – V

0 0.40 0

IOH – OUTPUT HIGH CURRENT – A


VOH
-1
-0.5 0.38

-2
-1.0 0.36
-3
-1.5 0.34
-4

-2.0 0.32
-5

-2.5 0.30 -6
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 0 0.2 0.4 0.6
TA – TEMPERATURE – °C TA – TEMPERATURE – °C IOH – OUTPUT HIGH CURRENT – A

Figure 1. VOH vs. Temperature. Figure 2. I OH vs. Temperature. Figure 3. V OH vs. IOH.

0.44 0.470 25
VOL – OUTPUT LOW VOLTAGE – V

VOL – OUTPUT LOW VOLTAGE – V


IOL – OUTPUT LOW CURRENT – A

0.465
0.43 20

0.460
0.42 15
0.455
0.41 10
0.450

0.40 5
0.445

0.39 0.440 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 0 100 200 300 400 500 600 700
TA – TEMPERATURE – °C TA – TEMPERATURE – °C IOL – OUTPUT LOW CURRENT – mA

Figure 4. V OL vs. Temperature. Figure 5. IOL vs. Temperature. Figure 6. VOL vs. IOL .
IFLH – LOW TO HIGH CURRENT THRESHOLD – mA

1.4 1.2 3.5


ICC – SUPPLY CURRENT – mA
ICC – SUPPLY CURRENT – mA

1.2 1.0
3.0
1.0
0.8
0.8
0.6 2.5
0.6
0.4
0.4
2.0
ICCL
ICCL 0.2
0.2 ICCH
ICCH
0 0 1.5
-50 -25 0 25 50 75 100 125 10 15 20 25 30 -50 -25 0 25 50 75 100 125
TA – TEMPERATURE – °C VCC – SUPPLY VOLTAGE – V TA – TEMPERATURE – °C

Figure 7. ICC vs. Temperature. Figure 8. ICC vs. VCC. Figure 9. IFLH vs. Temperature.
9

400 400 500

TP – PROPAGATION DELAY – ns
TP – PROPAGATION DELAY – ns
TP – PROPAGATION DELAY – ns

400
300 300

300
200 200
200

100 100
100 TPLH
TPLH
TPHL TPHL
0 0 0
10 15 20 25 30 6 9 12 15 18 -50 -25 0 25 50 75 100 125
VCC – SUPPLY VOLTAGE – V IF – FORWARD LED CURRENT – mA TA – TEMPERATURE – °C

Figure 10. Propagation Delay vs. VCC. Figure 11. Propagation Delay vs. IF . Figure 12. Propagation Delay vs.
Temperature.

400 400 35
TP – PROPAGATION DELAY – ns

TP – PROPAGATION DELAY – ns

30

VO – OUTPUT VOLTAGE – V
350 300 25

20
TPLH
300 200 15
TPHL
10

250 100 5
TPLH
0
TPHL
200 0 -5
0 50 100 150 200 0 20 40 60 80 100 0 1 2 3 4 5 6
Rg – SERIES LOAD RESISTANCE – Ω Cg – LOAD CAPACITANCE – nF IF – FORWARD LED CURRENT – mA

Figure 13. Propagation Delay vs. Rg. Figure 14. Propagation Delay vs. Cg. Figure 15. Transfer Characteristics.

25
IF – FORWARD CURRENT – mA

20

15

10

0
1.2 1.4 1.6 1.8
VF – FORWARD VOLTAGE – V

Figure 16. Input Current vs. Forward


Voltage.
10

1 8
0.1 µF IF
IF = 7 to 16 mA VCC = 15
+ to 30 V
2 7 –
500 Ω tr tf
+ VO
10 KHz – 90%
50% DUTY 3 6 47 Ω
CYCLE 50%
3 nF VOUT 10%
4 5
tPLH tPHL

Figure 17. Propagation Delay Test Circuit and Waveforms.

VCM
δV VCM
1 8 =
IF δt ∆t
A 0.1 µF
0V
2 7
B
+ + ∆t
5V VO –

VCC = 30 V
3 6 VOH
VO

SWITCH AT A: IF = 10 mA
4 5
VO VOL

SWITCH AT B: IF = 0 mA
+

VCM = 1500 V

Figure 18. CMR Test Circuit and Waveforms.


11

Applications Information IGBT gate drive in many HCPL-314J input, then the LED
Eliminating Negative IGBT applications as shown in should be reverse biased when in
Gate Drive Figure 19. Care should be taken the off state, to prevent the
To keep the IGBT firmly off, with such a PC board design to transient signals coupled from
the HCPL-314J has a very low avoid routing the IGBT collector the IGBT drain from turning on
maximum VOL specification of or emitter traces close to the the HCPL-314J.) An external
1.0 V. Minimizing Rg and HCPL-314J input as this can clamp diode may be connected
the lead inductance from the result in unwanted coupling of between pins 14 & 15 and pins 9
HCPL-314J to the IGBT gate and transient signals into the input of & 10 (as shown in Figure 19) for
emitter (possibly by mounting the HCPL-314J and degrade the protection of HCPL-314J in
HCPL-314J on a small PC board performance. (If the IGBT the case of IGBTs switching
directly above the IGBT) can drain must be routed near the inductive load.
eliminate the need for negative

HCPL-314J + HVDC
+5 V FLOATING
1 16 SUPPLY
270 Ω VCC = 18 V
CONTROL 0.1 µF +
INPUT –
2 15
74XX Rg
OPEN VOL
COLLECTOR
3 14

GND 1 3-PHASE
AC
+5 V
6 11
VCC = 18 V
270 Ω 0.1 µF +
CONTROL –
INPUT 7 10
Rg
74XX
OPEN
8 9
COLLECTOR

GND 1 - HVDC

Figure 19. Recommended LED Drive and Application Circuit for HCPL-314J.
12

Esw – ENERGY PER SWITCHING CYCLE – µJ


4.0
Qg = 50 nC
Selecting the Gate Resistor (Rg) 3.5
Qg = 100 nC
Step 1: Calculate R g minimum from the IOL peak specification. The 3.0 Qg = 200 nC
Qg = 400 nC
IGBT and Rg in Figure 24 can be analyzed as a simple RC circuit with a 2.5
voltage supplied by the HCPL-314J.
2.0

VCC – VOL 1.5


Rg ≥
IOLPEAK 1.0

0.5
24 V – 5 V
= 0
0.6A 0 20 40 60 80 100
Rg – GATE RESISTANCE – Ω
= 32 Ω
Figure 20. Energy Dissipated in the HCPL-
The VOL value of 5 V in the previous equation is the VOL at the peak 314J and for Each IGBT Switching Cycle.
current of 0.6A. (See Figure 6).

Step 2: Check the HCPL-314J power dissipation and increase Rg if LED Drive Circuit
necessary. The HCPL-314J total power dissipation (PT) is equal to the Considerations for Ultra High
sum of the emitter power (PE) and the output power (PO). CMR Performance
Without a detector shield, the
P T = PE + PO dominant cause of optocoupler
PE = IF • VF • Duty Cycle CMR failure is capacitive coupling
from the input side of the
PO = PO(BIAS) + PO(SWITCHING) = ICC • VCC + ESW (Rg,Qg)• f optocoupler, through the package,
to the detector IC as shown in
= (ICCBIAS + KICC • Qg • f) • VCC + E SW (Rg,Qg) • f Figure 21. The HCPL-314J
improves CMR performance by
where KICC • Qg • f is the increase in ICC due to switching and KICC is a using a detector IC with an
constant of 0.001 mA/(nC*kHz). For the circuit in Figure 19 with IF optically transparent Faraday
(worst case) = 10 mA, Rg = 32 Ω, Max Duty Cycle = 80%, shield, which diverts the
Qg = 100 nC, f = 20 kHz and TAMAX = 85°C: capacitively coupled current away
from the sensitive IC circuitry.
PE = 10 mA • 1.8 V • 0.8 = 14 mW However, this shield does not
eliminate the capacitive coupling
P O = (3 mA + (0.001 mA/(nC • kHz)) • 20 kHz • 100 nC) • 24 V + between the LED and optocoupler
0.4 µJ • 20 kHz = 128 mW pins 5-8 as shown in Figure 22.
This capacitive coupling causes
< 260 mW (PO(MAX) @ 85°C)
perturbations in the LED current
during common mode transients
The value of 3 mA for ICC in the previous equation is the max. I CC over and becomes the major source of
entire operating temperature range. CMR failures for a shielded
optocoupler. The main design
Since PO for this case is less than PO(MAX), Rg = 32 Ω is alright for the objective of a high CMR LED drive
power dissipation. circuit becomes keeping the LED
in the proper state (on or off )
during common mode transients.
For example, the recommended
application circuit (Figure 19), can
achieve 10 kV/µs CMR while
minimizing component complexity.

Techniques to keep the LED in the


proper state are discussed in the
next two sections.
13

1 8 1 CLEDO1 8

CLEDP CLEDP
2 7 2 7

CLEDO2

3 6 3 6
CLEDN CLEDN

4 5 4 5
SHIELD

Figure 21. Optocoupler Input to Output Figure 22. Optocoupler Input to Output
Capacitance Model for Unshielded Optocouplers. Capacitance Model for Shielded Optocouplers.

+5 V 1 8
0.1
CLEDP µF +
– VCC = 18 V
+ 2 7
ILEDP
VSAT

3 6 •••
CLEDN
Rg

4 5 •••
SHIELD

* THE ARROWS INDICATE THE DIRECTION


OF CURRENT FLOW DURING –dVCM/dt.

+ –
VCM

Figure 23. Equivalent Circuit for Figure 17 During Common


Mode Transient.

1 8 1 8
+5 V +5 V
CLEDP CLEDP
2 7 2 7

3 6 3 6
Q1 CLEDN CLEDN

ILEDN

4 5 4 5
SHIELD SHIELD

Figure 24. Not Recommended Open Collector Figure 25. Recommended LED Drive Circuit for Ultra-High
Drive Circuit. CMR IPM Dead Time and Propagation Delay Specifications.
14

CMR with the LED On supplied by the LED, and it is delay necessary to achieve this
(CMRH) not recommended for condition is equal to the
A high CMR LED drive circuit applications requiring ultra high maximum value of the
must keep the LED on during CMR1 performance. The propagation delay difference
common mode transients. This is alternative drive circuit which specification, PDD max, which is
achieved by overdriving the LED like the recommended specified to be 500 ns over the
current beyond the input application circuit (Figure 19), operating temperature range of
threshold so that it is not pulled does achieve ultra high CMR -40° to 100°C.
below the threshold during a performance by shunting the
transient. A minimum LED LED in the off state. Delaying the LED signal by the
current of 8 mA provides maximum propagation delay
adequate margin over the IPM Dead Time and difference ensures that the
maximum IFLH of 5 mA to Propagation Delay minimum dead time is zero, but it
achieve 10 kV/µs CMR. Specifications does not tell a designer what the
The HCPL-314J includes a maximum dead time will be. The
CMR with the LED Off Propagation Delay Difference maximum dead time is equivalent
(CMRL) (PDD) specification intended to to the difference between the
help designers minimize “dead maximum and minimum
A high CMR LED drive
time” in their power inverter propagation delay difference
circuit must keep the LED off
designs. Dead time is the time specification as shown in
(VF ≤ VF(OFF)) during common
high and low side power Figure 27. The maximum dead
mode transients. For example, time for the HCPL-314J is 1 µs
transistors are off. Any overlap
during a -dVCM/dt transient in (= 0.5 µs - (-0.5 µs)) over the
in Ql and Q2 conduction will
Figure 23, the current flowing operating temperature range of
result in large currents flowing
through CLEDP also flows -40°C to 100°C.
through the power devices from
through the RSAT and VSAT of the
the high-voltage to the low-
logic gate. As long as the low
voltage motor rails. To minimize Note that the propagation delays
state voltage developed across
dead time in a given design, the used to calculate PDD and dead
the logic gate is less than VF(OFF)
turn on of LED2 should be time are taken at equal
the LED will remain off and no
delayed (relative to the turn off temperatures and test conditions
common mode failure will occur.
of LED1) so that under worst- since the optocouplers under
case conditions, transistor Q1 consideration are typically
The open collector drive circuit, has just turned off when mounted in close proximity to
shown in Figure 24, can not keep transistor Q2 turns on, as shown each other and are switching
the LED off during a +dVCM /dt in Figure 26. The amount of identical IGBTs.
transient, since all the current
flowing through CLEDN must be
15

ILED1

VOUT1
Q1 ON
Q1 OFF

Q2 ON
Q2 OFF
VOUT2

ILED2
tPHL MAX
tPLH MIN

PDD* MAX = (tPHL- tPLH)MAX = tPHL MAX - tPLH MIN

*PDD = PROPAGATION DELAY DIFFERENCE


NOTE: FOR PDD CALCULATIONS THE PROPAGATION DELAYS
ARE TAKEN AT THE SAME TEMPERATURE AND TEST CONDITIONS.

Figure 26. Minimum LED Skew for Zero Dead Time.

ILED1

VOUT1
Q1 ON
Q1 OFF

Q2 ON
VOUT2 Q2 OFF

ILED2
tPHL MIN
tPHL MAX
tPLH
MIN
tPLH MAX
(tPHL-tPLH) MAX

PDD* MAX

MAXIMUM DEAD TIME


(DUE TO OPTOCOUPLER)
= (tPHL MAX - tPHL MIN) + (tPLH MAX - tPLH MIN)
= (tPHL MAX - tPLH MIN) – (tPHL MIN - tPLH MAX)
= PDD* MAX – PDD* MIN

*PDD = PROPAGATION DELAY DIFFERENCE


NOTE: FOR DEAD TIME AND PDD CALCULATIONS ALL PROPAGATION
DELAYS ARE TAKEN AT THE SAME TEMPERATURE AND TEST CONDITIONS.

Figure 27. Waveforms for Dead Time.


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Copyright © 2005 Agilent Technologies, Inc.
Obsoletes 5989-0782EN
March 1, 2005
5989-2141EN
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Datasheets for electronics components.

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