‫عنوان البحث‬

A study of the characteristics and types of JFET with some practical

applications

‫الهندسة االلكترونية بمنوف‬ : ‫كلـــــــــــــــية‬

‫عام‬: ‫الشعبة‬/‫القســم‬

‫ االولي‬: ‫المستوي‬/‫الفرقـة‬

Electronics(2( : ‫اســــم المقـــرر‬

: ‫كــــود المقــــرر‬

‫ايمن علي زين العابدين فؤاد‬: ‫اســـــم الطالب‬

29609301406731: ‫الرقـــم القومي‬

Ay.Al.khalic@el-eng.menofia.edu.eg : ‫البريد األكاديمي‬

‫ احمد نبيه زكي راشد‬/.‫ د‬: ‫اشـــــــــــــراف‬

Abstract:
The transistor FET is divided into a mosfet and JFET , where the JFET is divided into an
N-channel and a B-channel, the B-channel is characterized by a better conductivity than
the B-channel. Parties, the source and the drain have a communication channel of a
different type from the third-party type of gate, distinguished from the regular transistor
with small size and high speed
1. Introduction
At the beginning of the twentieth century, reliance on vacuum valves was in the
electronics industry, and with the development of semiconductor technology that
distinguished from valves in terms of small size and high efficiency, and after the
success of an American team in inventing a dipole called a transistor, which
revolutionized the electronics industry because of its high efficiency and fast operating
speed, there are two types of transistors,
Bipolar transistor (Bjt) nbn or bnb and a transistor effect of the field(FET) is divided into
two types JFET or MOSFET, we will talk in this research about a transistor J FET
channel N and channel B in terms of work theory and curve properties with an
explanation of the working areas of the transistor saturation region cutting area
breakdown region and region Umayyad With an explanation of the types of JFET
channel N and channel B and the renewal of the difference between them and the
internal structure and the properties curve for each type, we will talk about the methods
of analysis and design, different and at the end we will mention some of the different
applications of JFET

2. Junction field effect transistor Characteristics

We will now study properties in terms of operating theory, properties, and operating area

2.1. Junction field effect Transistor operating theory

There are two types of field effect transistor with a link, either N channel or B channel

Where it consists of three parties, the gate and its

symbol C and the source and the symbol S, and
the dran the symbol D fig1.1
2

Figure1. 1
and the internal composition of the transistor consists of a communication channel that
works on the connection between the source and the drain is of type N channel or
channel B where in type N the majority of the electron The majority of gaps consist of
the gate area being of a different type from the conduction channel, and the gate
connection must be reverse in relation to the connection of the
conduction channel and it forms around the gate a buffer zone
called fig1.2

 The depletion region is insulated between the gate and the

conduction channel, and the JFET depends in the theory of
Figure1.2 1
work on the opposite of the normal transistor that depends on
the current, where the current value that passes between the source and the drain is done
by the voltage applied to the gate in the gs where this voltage works to change the
thickness of the depletion area

When applying a voltage equal to zero, attraction will form between the gate and the
communication channel, which works on me, which increases the area of
communication, as the current will continue to increase linearly until reaching the
maximum value of the voltage VDD At this moment, the value of the current will be
established and we will get higher The passage of a current between the drain and the
source, and the current of the source is equal to the current of the drain, but with an
increase in the voltage on the permissible values, a transistor will collapse, where we
notice the presence of a battery that makes a difference between the source and the drain
for the passage of electrons. Each component has its own rated voltage

Figure1.3 1 3
And when a negative voltage is applied, it will repel the two regions, and the charge
carriers will go to the negative battery, which leads to the widening of the depletion area
and the narrowness of the communication channel. When continuing to increase the
value of the negative voltage, the depletion area will expand until contact occurs
between the two depletion regions and at this moment the current ID equals zero The
greater the voltage, the more breakage will occur and the voltage will be VP

We notice in the fig 1.3 am the thickness of the depletion area between the gate and the
drain is greater than its thickness in the area between the gate and the source because
reversibility between the drain and the gate is higher than reversibility between the
source and the gate

2.2. Curve characteristics and operating areas of the JFET

Now we will talk about the properties curve of a transistor JET N- channel fig2.2.1
1-In the case when the gate voltage
VGS equals zero, the communication
channel is at the largest amplitude and
causes the electrons to pass perfectly
between the source and the drain and
the current value continues to increase
linearly according to Ohm's Law ID
This increase is proportional to its value
VDS and this is called The region with
linear behavior is in the ohmic region,
in which case the JFET acts as a
variable resistance
Fig2.2.1

2. When steady VGS at zero, the current continues in the linear amplifier until the
voltage VDS reaches its highest value in this case the current is constant ID at this value

4
and the value is ID at the highest value and this region is called the saturation region and
the transistor is a good condeuctor The transistor works as an open switching

2- The active region consists of the curved discontinuity with the curve of the cutting
regionVP meaning that there is no drain current moving in the circuit and in this region
the transistor works as an amplifier of the voltage

3-When a negative voltage is applied to the gate VGS the current continues to decrease
and the thickness of the depletion area continues to increase until the lead to weak
electrons between the drain and the conductor. When contact occurs between the two
depletion regions, the value of the current ID equals zero and in the event of more
interference with the increase VGS It will induce a breakdown of the transistor and call
this region the cut-off or pinch- off area where the transistor acts as a closed switch

4- When applying a positive voltage higher than the rated voltage of the transistor, a
breakdown of the transistor will occur

2. Junction field effct transistors Analysis

In this way, the values of current and voltage are obtained by knowing the values of the
resistors

2.1. Fixed bies N-chanal JFET

He is given this name because the value of Rs is set to zero

5
 2.2. Self bais N-chanal JFET

2.3. Voltage divider bais N-chanal JFET

3. Junction field effct transistors design

In this way, the resistance values are found using the voltage and current information

3.1. Self bais N-chanal JFET

3.1. Voltage divider N-chanal JFET

6
4. Junction field effct transistors typs and application
After we talked about the characteristics of the Transistor GFET, now we will review the
types of transistors and the most important applications used in them

4.1. JFET P-channel

The internal composition of P-channel consists of the
source and the drain between them is a type P
communication channel where in this type the gaps are the
majority and the direction of the current from the source to
the drain in addition to the gate is of type N, and in the symbol when the arrow indicates
outside the transistor it is of type P
In the properties curve fig 3.2 , when the voltage is equal to zero, the transistor works,
and the current continues to lead in a linear fashion until it reaches the maximum value
of the voltage VDC etc. The same properties of the curve n channel
When when we need to reduce the current, we apply a positive voltage since the
connection type is B, the opposite of type N and when a positive gate voltage is applied
the current decreases until it reaches the cutting area

fig 3.2

7
 4. 2. JFET N-channel
The n- channel is the same as the P-channel structure, but it differs in terms of the
installation of the communication channel and the gate where the communication
channel is of the type N where the majority are for electrons and the direction of current
from the drain to the source and the installation of the type B

The properties curve fig 3.3 is very free from B-channel, but
when we want to reduce the current we apply a negative voltage
and not a positive opposite to type B, and this type is considered
better than type B in terms of conductivity because the majority
of the donor electrons are
Fig3.3

4. 3. JFET application Fig3.3

JFET is considered one of the most important electronic
components present, as it is better than the ordinary transistor in terms of small size, low
energy consumption, energy dissipation is higher.
The input and output impedance is high, but one of its major drawbacks is that it is
expensive and difficult to design, and is used in the following applications
1- As an amplifier
2- Quick electronic key
3- It is used in isolation circuits
4- It is used as mixer in analog communication circuits
5- Electronic amplifier
6- Wireless frequency amplifiers

5. JFET as a variable resistors

8
[1] Name of the authors, “Title of the paper or the book,” Publisher, Vol., PP., Year.
Example:
[1] Hamdi Awad, “neural networks and its applications,” IEEE Transaction in Control
systems, vol. 22, pp. 15-21, 2001.