BUK7510-55AL www.DataSheet4U.

com
N-channel TrenchMOS standard level FET
Rev. 02 — 3 January 2008 Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP General-Purpose Automotive (GPA) TrenchMOS technology
specifically optimized for linear operation. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.

1.2 Features
„ 175 °C rated „ Q101 compliant
„ Stable operation in linear mode „ TrenchMOS technology

1.3 Applications
„ 12 V and 24 V loads „ Automotive systems
„ DC linear motor control „ Repetitive clamped inductive switching

1.4 Quick reference data

Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
ID drain current VGS = 10 V; Tmb = 25 °C; [1] - - 75 A
see Figure 1 and 4
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 300 W
Avalanche ruggedness
EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 55 V; - - 1.1 J
drain-source RGS = 50 Ω; VGS = 10 V;
avalanche energy Tj(init) = 25 °C; unclamped
inductive load
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 25 A; - 8.5 10 mΩ
resistance Tj = 25 °C; see Figure 12
and 13

[1] Continuous current is limited by package.

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS standard
w w w . D alevel
t a SFET
h e e t 4 U .

2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
mb D
2 D drain
3 S source G
mb D mounting base;
connected to drain mbb076 S

1 2 3
SOT78 (TO-220AB)

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BUK7510-55AL TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 55 V
VDGR drain-gate voltage RGS = 20 kΩ - 55 V
VGS gate-source voltage -20 20 V
ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4 [1][2] - 122 A
Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4 [3] - 75 A
Tmb = 100 °C; VGS = 10 V; see Figure 1 [3] - 75 A
IDM peak drain current Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4 - 490 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 300 W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Avalanche ruggedness
EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; - 1.1 J
drain-source avalanche VGS = 10 V; Tj(init) = 25 °C; unclamped
energy inductive load
EDS(AL)R repetitive drain-source see Figure 3 [4][5] - - J
avalanche energy [6]

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Product data sheet Rev. 02 — 3 January 2008 2 of 14

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS standard level FET
www.DataSheet4U.com

Table 4. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Source-drain diode
IS source current Tmb = 25 °C [1][2] - 122 A
Tmb = 25 °C [3] - 75 A
ISM peak source current tp ≤ 10 μs; pulsed; Tmb = 25 °C - 490 A

[1] Current is limited by power dissipation chip rating.

[2] Refer to document 9397 750 12572 for further information.
[3] Continuous current is limited by package.
[4] Single-shot avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[6] Refer to AN10273 for further information.

003aaa726 03aa16
150 120

ID Pder
(A) (%)

100 80

(1)

50 40

0 0
0 50 100 150 200 0 50 100 150 200
Tmb (°C) Tmb (°C)

VGS • 10 V P tot
P der = × 100 %
P tot (25°C )
(1) Capped at 75 A due to package.

Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a
mounting base temperature function of mounting base temperature

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Product data sheet Rev. 02 — 3 January 2008 3 of 14

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS standard level FET
www.DataSheet4U.com

003aaa739
102 (1)

IAV Tj = 25 ˚C
(A) (2)

10

(3) 150 ˚C

10-1
10-2 10-1 1 tAV (ms) 10

(1) Singleíshot.
(2) Singleíshot.
(3) Repetitive.

Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period

003aaa737
103
Limit RDSon = VDS / ID tp = 10 μ s
ID
(A)

102 100 μ s
(1)

1 ms
DC
10 ms
10
100 ms

1
1 10 VDS (V) 102

Tmb = 25 °C; IDM is single pulse

(1) Capped at 75 A due to package.

Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

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Product data sheet Rev. 02 — 3 January 2008 4 of 14

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS
w standard
w w . D alevel
t a FET
S h e e t 4 U .

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance vertical in still air - 60 - K/W
from junction to
ambient
Rth(j-mb) thermal resistance see Figure 5 - 0.25 0.5 K/W
from junction to
mounting base

003aaa734
1

Zth(j-mb)
(K/W) δ = 0.5

0.2
10-1
0.1

0.05

0.02
tp
-2 P δ=
10 T

single shot tp t
T
10-3
10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source ID = 250 μA; VGS = 0 V; 50 - - V
breakdown voltage Tj = -55 °C
ID = 250 μA; VGS = 0 V; 55 - - V
Tj = 25 °C
VGS(th) gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C; 2 3 4 V
voltage see Figure 10 and 11
ID = 1 mA; VDS = VGS; - - 4.4 V
Tj = -55 °C; see Figure 10 and 11
ID = 1 mA; VDS = VGS; 1 - - V
Tj = 175 °C; see Figure 10 and
11

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Product data sheet Rev. 02 — 3 January 2008 5 of 14

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS standard level FET
www.DataSheet4U.com

Table 6. Characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit
IDSS drain leakage current VDS = 55 V; VGS = 0 V; - - 500 μA
Tj = 175 °C
VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.05 10 μA
IGSS gate leakage current VDS = 0 V; VGS = +20 V; - 2 100 nA
Tj = 25 °C
VDS = 0 V; VGS = -20 V; - 2 100 nA
Tj = 25 °C
RDSon drain-source on-state VGS = 10 V; ID = 25 A; - - 20 mΩ
resistance Tj = 175 °C; see Figure 12 and
13
VGS = 10 V; ID = 25 A; Tj = 25 °C; - 8.5 10 mΩ
see Figure 12 and 13
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; - 0.85 1.2 V
see Figure 16
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/μs; - 73 - ns
VGS = 0 V; VDS = 30 V; Tj = 25 °C
Qr recovered charge IS = 20 A; dIS/dt = -100 A/μs; - 430 - nC
VGS = 0 V; VDS = 30 V; Tj = 25 °C
Dynamic characteristics
QG(tot) total gate charge ID = 25 A; VDS = 44 V; - 124 - nC
VGS = 10 V; Tj = 25 °C;
see Figure 14
QGS gate-source charge ID = 25 A; VDS = 44 V; - 22 - nC
VGS = 10 V; Tj = 25 °C;
see Figure 14
QGD gate-drain charge ID = 25 A; VDS = 44 V; - 50 - nC
VGS = 10 V; Tj = 25 °C;
see Figure 14
VGS(pl) gate-source plateau ID = 25 A; VDS = 44 V; Tj = 25 °C; - 5 - V
voltage see Figure 14
Ciss input capacitance VGS = 0 V; VDS = 25 V; - 4710 6280 pF
f = 1 MHz; Tj = 25 °C;
see Figure 15
Coss output capacitance VGS = 0 V; VDS = 25 V; - 980 1180 pF
f = 1 MHz; Tj = 25 °C;
see Figure 15
Crss reverse transfer VGS = 0 V; VDS = 25 V; - 560 770 pF
capacitance f = 1 MHz; Tj = 25 °C;
see Figure 15
td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; - 33 - ns
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
tr rise time VDS = 30 V; RL = 1.2 Ω; - 117 - ns
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C

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Product data sheet Rev. 02 — 3 January 2008 6 of 14

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS standard level FET
www.DataSheet4U.com

Table 6. Characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit
td(off) turn-off delay time VDS = 30 V; RL = 1.2 Ω; - 132 - ns
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
tf fall time VDS = 30 V; RL = 1.2 Ω; - 95 - ns
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
LD internal drain from contact screw on package - 3.5 - nH
inductance to center of die; Tj = 25 °C
from drain lead 6 mm from - 4.5 - nH
package to center of die;
Tj = 25 °C
LS internal source from source lead to source bond - 7.5 - nH
inductance pad; Tj = 25 °C

003aaa729 003aaa731
400 20
7 8 9 10
ID RDSon
(A) 20 (mΩ)
18
300 15
16
14
VGS (V) = 10
12
9.5
200 9 10
8.5 VGS (V) = 20
8
7.5
7
100 5
6.5
6
5.5
5
4.5
0 0
0 2 4 6 8 10 0 100 200 300 400
VDS (V) ID (A)

T j = 25 °C T j = 25 °C

Fig 6. Output characteristics: drain current as a Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values of drain current; typical values

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Product data sheet Rev. 02 — 3 January 2008 7 of 14

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS standard level FET
www.DataSheet4U.com

003aaa732 003aaa733
40 150
gfs
ID
(S)
(A)
35
100

30

50
25

Tj = 175 °C Tj = 25 °C

20 0
0 20 40 60 ID (A) 80 0 2 4 6 8 10
VGS (V)

T j = 25 °C; VDS = 25 V VDS = 25 V

Fig 8. Forward transconductance as a function of Fig 9. Transfer characteristics: drain current as a

drain current; typical values function of gate-source voltage; typical values

03aa32 03aa35
5 10−1
VGS(th) ID
(V) (A)
min typ max
4 10−2
max

3
typ 10−3

2
min 10−4

1 10−5

0 10−6
−60 0 60 120 180 0 2 4 6
Tj (°C) VGS (V)

ID = 1 m A; VDS = VGS T j = 25 °C; VDS = VGS

Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of
junction temperature gate-source voltage

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Product data sheet Rev. 02 — 3 January 2008 8 of 14

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS standard level FET
www.DataSheet4U.com

003aaa730 03ne89
18 2

RDSon a
(mΩ)
1.5
14

10
0.5

6 0
5 10 15 VGS (V) 20 -60 0 60 120 180
Tj (°C)

T j = 25 °C; ID = 25 A R DSon
a=
R DSon (25°C )

Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of gate-source voltage; typical values factor as a function of junction temperature

003aaa735 003aaa738
10 8000
VGS
C
(V)
(pF) Ciss
8
6000
VDS = 14 V

VDS = 44 V
6
Coss
4000

4
C
rss
2000
2

0 0
0 50 100 150 10-1 1 10 102
QG (nC) VDS (V)

T j = 25 °C; ID = 25 A VGS = 0 V ; f = 1 M H z

Fig 14. Gate-source voltage as a function of gate Fig 15. Input, output and reverse transfer capacitances
charge; typical values as a function of drain-source voltage; typical
values

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Product data sheet Rev. 02 — 3 January 2008 9 of 14

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS standard level FET
www.DataSheet4U.com

003aaa736
150

IS
(A)

100

Tj = 25 °C
50
Tj = 175 °C

0
0.0 0.3 0.6 0.9 1.2
VSD (V)

VGS = 0 V

Fig 16. Source current as a function of source-drain voltage; typical values

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Product data sheet Rev. 02 — 3 January 2008 10 of 14

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS standard level FET
www.DataSheet4U.com

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

E A
p A1

q mounting
D1 base

L1 L2

Q
b1
L

1 2 3

b c

e e

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

A b b1 D D1 E e L L2
UNIT A1 c L1 p q Q
max.
4.7 1.40 0.9 1.45 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6
mm 2.54 3.0
4.1 1.25 0.6 1.00 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

05-03-22
SOT78 3-lead TO-220AB SC-46
05-10-25

Fig 17. Package outline SOT78 (TO-220AB)

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Product data sheet Rev. 02 — 3 January 2008 11 of 14

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS standard level FET
www.DataSheet4U.com

8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BUK7510_55AL_2 20080103 Product data sheet - BUK75_7610_55AL_1
Modifications: • The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Typical thermal resistance from junction to mounting base figure added in Table 5.
BUK75_7610_55AL_1 20050331 Product data sheet - -

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Product data sheet Rev. 02 — 3 January 2008 12 of 14

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS standard level FET
www.DataSheet4U.com

9. Legal information

9.1 Data sheet status

Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.

10. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com

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Product data sheet Rev. 02 — 3 January 2008 13 of 14

NXP Semiconductors BUK7510-55AL
N-channel TrenchMOS standard level FET
www.DataSheet4U.com

11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 5
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
10 Contact information. . . . . . . . . . . . . . . . . . . . . 13
11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2008. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 January 2008
Document identifier: BUK7510-55AL_2